SL04-HM3-18

SL04-M www.vishay.com Vishay Semiconductors Schottky Rectifier Surface-Mount FEATURES eSMP® Series • For surface mounted applications • Low-profile package Available • Ideal for automated placement 2 1 23020 • Low power loss, high efficiency • Meets MSL level 1, per J-STD-020, LF maximum peak of 260 °C • Meets JESD 201 class 2 whisker test • Wave and reflow solderable 23019 SMF (DO-219AB) • AEC-Q101 qualified available LINKS TO ADDITIONAL RESOURCES 3D 3D • Base P/N-M3 - halogen-free, RoHS-compliant, and commercial grade • Base P/N-HM3 - halogen-free, RoHS-compliant, and AEC-Q101 qualified 3D Models • Compatible to SOD-123W package case outline or SOD-123F and SOD-123FL MECHANICAL DATA • Material categorization: for definitions of compliance please see www.vishay.com/doc?99912 Case: SMF (DO-219AB) Polarity: color band denotes cathode end Weight: approx. 15 mg TYPICAL APPLICATIONS Packaging codes / options: 18/10K per 13" reel (8 mm tape), MOQ = 50K 08/3K per 7" reel (8 mm tape), MOQ = 30K For use in high frequency inverters, freewheeling, DC/DC converters, and polarity protection in commercial, industrial, and automotive applications. Circuit configuration: single PARTS TABLE PART SL04-M ORDERING CODE MARKING REMARKS SL04-M3-18 or SL04-M3-08 SL04-HM3-18 or SL04-HM3-08 U4 Tape and reel ABSOLUTE MAXIMUM RATINGS (Tamb = 25 °C, unless otherwise specified) PARAMETER SYMBOL VALUE Maximum repetitive peak reverse voltage TEST CONDITIONS VRRM 40 UNIT V Maximum average forward rectified current (fig. 4) IF(AV) 1.1 A Peak forward surge current 8.3 ms single half sine-wave TJ(init) = 25 °C IFSM 40 A THERMAL CHARACTERISTICS (Tamb = 25 °C, unless otherwise specified) PARAMETER SYMBOL VALUE UNIT Thermal resistance junction to lead TEST CONDITIONS RthJL 22 K/W Thermal resistance junction to ambient air (1) RthJA 180 K/W Tj 175 °C Tstg -55 to +175 °C Junction temperature in DC forward current without reverse bias Storage temperature range Note (1) Mounted on epoxy substrate with 3 mm x 3 mm Cu pads (≥ 40 μm thick) Rev. 1.7, 26-Feb-2021 Document Number: 85941 1 For technical questions within your region: DiodesAmericas@vishay.com, DiodesAsia@vishay.com, DiodesEurope@vishay.com THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000 SL04-M www.vishay.com Vishay Semiconductors ELECTRICAL CHARACTERISTICS (Tamb = 25 °C, unless otherwise specified) PARAMETER TEST CONDITIONS IF = 0.5 A IF = 1.1 A IF = 0.5 A Instantaneous forward voltage IF = 1.1 A IF = 0.5 A IF = 1.1 A SYMBOL TYP. MAX. 0.41 0.47 TJ = 25 °C VF (1) TJ = 100 °C TJ = 125 °C TJ = 25 °C Reverse current VR = 40 V TJ = 100 °C IR TJ = 125 °C Typical junction capacitance VR = 4.0 V, 1 MHz CD 0.48 0.54 0.34 - 0.43 - 0.31 - UNIT V 0.42 - 10 20 μA 1.2 2.6 mA 4.5 13 mA 65 - pF Note (1) Pulse test: 300 μs pulse width, 1 % duty cycle RATINGS AND CHARACTERISTICS CURVES (Tamb = 25 °C, unless otherwise specified) 1.0E+0 10 TJ at 25 °C TJ at 100 °C TJ at 150 °C 100.0E-3 10.0E-3 IR [A] IF [A] 1 TJ at 75 °C TJ at 125 °C TJ at 175 °C 0.1 1.0E-3 100.0E-6 typical at 25 °C typical at 100 °C typical at 125 °C typical at 150 °C 0.01 0.001 10.0E-6 1.0E-6 100.0E-9 0.00 0.20 0.40 0.60 0.80 1.00 1.20 0 10 20 30 40 VF [V] VR [V] Fig. 1 - Typical Forward Characteristics Fig. 3 - Typical Reverse Characteristics 1.2 200 180 Average Forward Current [A] f = 1 MHz 160 140 CD [pF] 120 100 80 60 40 20 1.0 0.8 0.6 0.4 RthJL = 22K/W 0.2 RthJA = 180K/W 0.0 0 0.1 1 10 100 0 25 50 75 100 125 150 VR [V] Lead Temperature (°C) Fig. 2 - Typical Diode Capacitance vs. Reverse Voltage Fig. 4 - Forward Current Derating Curve 175 Rev. 1.7, 26-Feb-2021 Document Number: 85941 2 For technical questions within your region: DiodesAmericas@vishay.com, DiodesAsia@vishay.com, DiodesEurope@vishay.com THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000 SL04-M www.vishay.com Vishay Semiconductors Transient Thermal Impedance [K/W] 1000 RthJL RthJA (Pad 3 mm x 3 mm) 100 10 1 0.001 0.01 0.1 1 10 100 1000 t - Pulse Duration [s] Fig. 5 - Typical Transient Thermal Impedance Rev. 1.7, 26-Feb-2021 Document Number: 85941 3 For technical questions within your region: DiodesAmericas@vishay.com, DiodesAsia@vishay.com, DiodesEurope@vishay.com THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000 SL04-M www.vishay.com Vishay Semiconductors PACKAGE DIMENSIONS in millimeters (inches): SMF (DO-219AB) 0.85 [0.033] 0.35 [0.014] 0.1 [0.004] 0 [0.000] 5° 5° 1.2 [0.047] 1.7 [0.067] 1.9 [0.075] 0.8 [0.031] Detail Z enlarged 0.1 [0.004] 0.25 [0.010] 1.8 [0.071] min. 1.08 [0.043] 0.88 [0.035] 2.9 [0.114] 2.7 [0.106] 3.9 [0.154] 3.5 [0.138] foot print recommendation: Reflow soldering 1.3 [0.051] 1.4 [0.055] 1.3 [0.051] 2.9 [0.114] Created - Date: 15. February 2005 Rev. 6 - Date: 24.Feb.2021 Document no.: S8-V-3915.01-001 (4) 22989 Rev. 1.7, 26-Feb-2021 Document Number: 85941 4 For technical questions within your region: DiodesAmericas@vishay.com, DiodesAsia@vishay.com, DiodesEurope@vishay.com THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000 SL04-M www.vishay.com Vishay Semiconductors ORIENTATION IN CARRIER TAPE - SMF (DO-219AB) Unreeling direction SMF cathode Top view Document no.: S8-V-3717.02-003 (4) Created - Date: 09. Feb. 2010 22670 Rev. 1.7, 26-Feb-2021 Document Number: 85941 5 For technical questions within your region: DiodesAmericas@vishay.com, DiodesAsia@vishay.com, DiodesEurope@vishay.com THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000 Legal Disclaimer Notice www.vishay.com Vishay Disclaimer ALL PRODUCT, PRODUCT SPECIFICATIONS AND DATA ARE SUBJECT TO CHANGE WITHOUT NOTICE TO IMPROVE RELIABILITY, FUNCTION OR DESIGN OR OTHERWISE. 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