SM5S24ATHE3/I

SM5S10AT thru SM5S43AT www.vishay.com Vishay General Semiconductor Surface Mount PAR® Transient Voltage Suppressors High Temperature Stability and High Reliability Conditions FEATURES • Junction passivation optimized design passivated anisotropic rectifier technology • TJ = 175 °C capability suitable for high reliability and automotive requirement • Available in unidirectional polarity only • Low leakage current • Low forward voltage drop • High surge capability • Meets ISO7637-2 surge specification (varied by test condition) DO-218 Compatible Anode • Meets MSL level 1, per J-STD-020, LF maximum peak of 245 °C Cathode • AEC-Q101 qualified available - Automotive ordering code: base P/NHE3 • Material categorization: for definitions of compliance please see www.vishay.com/doc?99912 PRIMARY CHARACTERISTICS VWM 10 V to 43 V VBR 11.1 V to 52.8 V PPPM (10 x 1000 μs) 3600 W PPPM (10 x 10 000 μs) 2800 W PD 5W IFSM 500 A TJ max. 175 °C Polarity Unidirectional Package DO-218AC TYPICAL APPLICATIONS Use in sensitive electronics protection against voltage transients induced by inductive load switching and lighting, especially for automotive load dump protection application. MECHANICAL DATA Case: DO-218AC Molding compound meets UL 94 V-0 flammability rating Base P/NHE3 - RoHS-compliant, AEC-Q101 qualified Terminals: matte tin plated leads, solderable J-STD-002 and JESD 22-B102 HE3 suffix meets JESD 201 class 2 whisker test per Polarity: heatsink is anode MAXIMUM RATINGS (TA = 25 °C unless otherwise noted) PARAMETER SYMBOL with 10/1000 μs waveform Peak pulse power dissipation with 10/10 000 μs waveform Power dissipation on infinite heatsink at TC = 25 °C (fig. 1) Peak pulse current with 10/1000 μs waveform Peak forward surge current 8.3 ms single half sine-wave Operating junction and storage temperature range VALUE UNIT 3600 PPPM PD W 2800 5.0 W See next table A IFSM 500 A TJ, TSTG -55 to +175 °C IPPM (1) Note (1) Non-repetitive current pulse at T = 25 °C A Revision: 26-Oct-2021 Document Number: 87609 1 For technical questions within your region: DiodesAmericas@vishay.com, DiodesAsia@vishay.com, DiodesEurope@vishay.com THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000 SM5S10AT thru SM5S43AT www.vishay.com Vishay General Semiconductor ELECTRICAL CHARACTERISTICS (TA = 25 °C unless otherwise noted) BREAKDOWN VOLTAGE VBR (V) STAND-OFF VOLTAGE VWM (V) MAXIMUM REVERSE LEAKAGE AT VWM ID (μA) MAXIMUM REVERSE LEAKAGE AT VWM TJ = 175 °C ID (μA) MAX. PEAK PULSE CURRENT AT 10/1000 μs WAVEFORM (A) MAXIMUM CLAMPING VOLTAGE AT IPPM VC (V) TYPICAL TEMP. COEFFICIENT OF VBR (1) αT (%/°C) MIN. NOM. MAX. TEST CURRENT IT (mA) SM5S10AT 11.1 11.7 12.3 5.0 10.0 15 250 212 17.0 0.069 SM5S11AT 12.2 12.9 13.5 5.0 11.0 10 150 198 18.2 0.072 SM5S12AT 13.3 14.0 14.7 5.0 12.0 10 150 181 19.9 0.074 SM5S13AT 14.4 15.2 15.9 5.0 13.0 10 150 167 21.5 0.076 SM5S14AT 15.6 16.4 17.2 5.0 14.0 10 150 155 23.2 0.078 SM5S15AT 16.7 17.6 18.5 5.0 15.0 10 150 148 24.4 0.080 SM5S16AT 17.8 18.8 19.7 5.0 16.0 10 150 138 26.0 0.081 SM5S17AT 18.9 19.9 20.9 5.0 17.0 10 150 130 27.6 0.082 SM5S18AT 20.0 21.1 22.1 5.0 18.0 10 150 123 29.2 0.083 SM5S20AT 22.2 23.4 24.5 5.0 20.0 10 150 111 32.4 0.085 SM5S22AT 24.4 25.7 26.9 5.0 22.0 10 150 101 35.5 0.086 SM5S24AT 26.7 28.1 29.5 5.0 24.0 10 150 93 38.9 0.087 SM5S26AT 28.9 30.4 31.9 5.0 26.0 10 150 86 42.1 0.088 SM5S28AT 31.1 32.8 34.4 5.0 28.0 10 150 79 45.4 0.089 SM5S30AT 33.3 35.1 36.8 5.0 30.0 10 150 74 48.4 0.090 SM5S33AT 36.7 38.7 40.6 5.0 33.0 10 150 68 53.3 0.091 SM5S36AT 40.0 42.1 44.2 5.0 36.0 10 150 62 58.1 0.091 SM5S40AT 44.4 46.8 49.1 5.0 40.0 10 150 56 64.5 0.092 SM5S43AT 47.8 50.3 52.8 5.0 43.0 10 150 52 69.4 0.093 DEVICE TYPE Notes • For all types maximum VF = 2.0 V at IF = 100 A measured on 8.3 ms single half sine-wave or equivalent square wave, duty cycle = 4 pulses per minute maximum (1) To calculate V BR vs. junction temperature, use the following formula: VBR at TJ = VBR at 25 °C x (1 + αT x (TJ - 25)) THERMAL CHARACTERISTICS (TA = 25 °C unless otherwise noted) PARAMETER Typical thermal resistance, junction to case SYMBOL VALUE UNIT RθJC 1.0 °C/W ORDERING INFORMATION (Example) PREFERRED P/N SM5S10ATHE3/I (1) UNIT WEIGHT (g) 2.505 PREFERRED PACKAGE CODE I BASE QUANTITY DELIVERY MODE 750 13" diameter plastic tape and reel, anode towards the sprocket hole Note (1) AEC-Q101 qualified Revision: 26-Oct-2021 Document Number: 87609 2 For technical questions within your region: DiodesAmericas@vishay.com, DiodesAsia@vishay.com, DiodesEurope@vishay.com THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000 SM5S10AT thru SM5S43AT www.vishay.com Vishay General Semiconductor RATINGS AND CHARACTERISTICS CURVES (TA = 25 °C unless otherwise noted) 10 000 Reverse Surge Power (W) Power Dissipation (W) 8.0 6.0 4.0 2.0 0 1000 50 0 150 100 10 200 Pulse Width (ms) - ½ IPP Exponential Waveform Fig. 1 - Power Derating Curve Fig. 4 - Reverse Power Capability 3000 Transient Thermal Impedance (°C/W) 100 Load Dump Power (W) 2500 2000 1500 1000 500 0 50 25 150 Input Peak Pulse Current (%) 100 Case Temperature (°C) 75 100 150 125 175 RθJA 10 RθJC 1 0.1 0.01 0.01 0.1 1 10 100 Case Temperature (°C) t - Pulse Width (s) Fig. 2 - Load Dump Power Characteristics (10 ms Exponential Waveform) Fig. 5 - Typical Transient Thermal Impedance tr = 10 μs TJ = 25 °C Pulse Width (td) is Defined as the Point Where the Peak Current Decays to 50 % of IPPM Peak Value IPPM 100 Half Value - IPP IPPM 2 50 td 0 0 10 20 30 40 t - Time (ms) Fig. 3 - Pulse Waveform Revision: 26-Oct-2021 Document Number: 87609 3 For technical questions within your region: DiodesAmericas@vishay.com, DiodesAsia@vishay.com, DiodesEurope@vishay.com THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000 SM5S10AT thru SM5S43AT www.vishay.com Vishay General Semiconductor PACKAGE OUTLINE DIMENSIONS in inches (millimeters) DO-218AC 0.628 (16.0) 0.592 (15.0) 0.539 (13.7) 0.524 (13.3) Mounting Pad Layout 0.150 (3.8) 0.126 (3.2) 0.116 (3.0) 0.093 (2.4) 0.413 (10.5) 0.342 (8.7) 0.374 (9.5) 0.327 (8.3) 0.091 (2.3) 0.067 (1.7) 0.413 (10.5) 0.374 (9.5) 0.366 (9.3) 0.343 (8.7) 0.116 (3.0) 0.093 (2.4) 0.366 (9.3) 0.343 (8.7) 0.606 (15.4) 0.583 (14.8) 0.406 (10.3) 0.382 (9.7) Lead 1 0.197 (5.0) 0.185 (4.7) 0.004 (0.10) (NOM.) Lead 2/Metal Heatsink 0.138 (3.5) 0.098 (2.5) 0.028 (0.7) 0.020 (0.5) 0.098 (2.5) 0.059 (1.5) Revision: 26-Oct-2021 Document Number: 87609 4 For technical questions within your region: DiodesAmericas@vishay.com, DiodesAsia@vishay.com, DiodesEurope@vishay.com THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. 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