SM6S10 thru SM6S36A
www.vishay.com
Vishay General Semiconductor
Surface Mount PAR® Transient Voltage Suppressors
High Temperature Stability and High Reliability Conditions
FEATURES
• Junction passivation optimized design passivated
anisotropic rectifier technology
• TJ = 175 °C capability suitable for high reliability
and automotive requirement
• Available in uni-directional polarity only
• Low leakage current
• Low forward voltage drop
DO-218AB
• High surge capability
• Meets ISO7637-2 surge specification (varied by test
condition)
• Meets MSL level 1, per J-STD-020, LF maximum peak of
245 °C
• AEC-Q101 qualified
• Material categorization: for definitions of compliance
please see www.vishay.com/doc?99912
PRIMARY CHARACTERISTICS
VWM
10 V to 36 V
VBR
11.1 V to 44.2 V
PPPM (10 x 1000 μs)
4600 W
PPPM (10 x 10 000 μs)
3600 W
PD
6W
IFSM
600 A
TJ max.
175 °C
Polarity
Uni-directional
Package
DO-218AB
TYPICAL APPLICATIONS
Use in sensitive electronics protection against voltage
transients induced by inductive load switching and lighting,
especially for automotive load dump protection application.
MECHANICAL DATA
Case: DO-218AB
Molding compound meets UL 94 V-0 flammability rating
Base P/NHE3 - RoHS-compliant, AEC-Q101 qualified
Base P/NHE3_X - RoHS-compliant and AEC-Q101 qualified
(“X” denotes revision code e.g. A, B, ..., revision code only
applicable for part number with ± 5 % tolerance)
Terminals: matte tin plated leads, solderable
J-STD-002 and JESD 22-B102
HE3 suffix meets JESD 201 class 2 whisker test
per
Polarity: heatsink is anode
MAXIMUM RATINGS (TC = 25 °C unless otherwise noted)
PARAMETER
Peak pulse power dissipation
SYMBOL
with 10/1000 μs waveform
with 10/10 000 μs waveform
Power dissipation on infinite heatsink at TC = 25 °C (fig. 1)
Peak pulse current with 10/1000 μs waveform
Peak forward surge current 8.3 ms single half sine-wave
Operating junction and storage temperature range
PPPM
PD
IPPM
(1)
VALUE
4600
3600
UNIT
W
6.0
W
See next table
A
IFSM
600
A
TJ, TSTG
-55 to +175
°C
Note
(1) Non-repetitive current pulse at T = 25 °C
A
Revision: 22-Jul-16
Document Number: 88384
1
For technical questions within your region: DiodesAmericas@vishay.com, DiodesAsia@vishay.com, DiodesEurope@vishay.com
THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT
ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000
SM6S10 thru SM6S36A
www.vishay.com
Vishay General Semiconductor
ELECTRICAL CHARACTERISTICSS (TC = 25 °C unless otherwise noted)
DEVICE
TYPE
SM6S10
SM6S10A
SM6S11
SM6S11A
SM6S12
SM6S12A
SM6S13
SM6S13A
SM6S14
SM6S14A
SM6S15
SM6S15A
SM6S16
SM6S16A
SM6S17
SM6S17A
SM6S18
SM6S18A
SM6S20
SM6S20A
SM6S22
SM6S22A
SM6S24
SM6S24A
SM6S26
SM6S26A
SM6S28
SM6S28A
SM6S30
SM6S30A
SM6S33
SM6S33A
SM6S36
SM6S36A
BREAKDOWN
VOLTAGE
VBR (V)
MIN.
MAX.
TEST
CURRENT
IT
(mA)
11.1
11.1
12.2
12.2
13.3
13.3
14.4
14.4
15.6
15.6
16.7
16.7
17.8
17.8
18.9
18.9
20.0
20.0
22.2
22.2
24.4
24.4
26.7
26.7
28.9
28.9
31.1
31.1
33.3
33.3
36.7
36.7
40.0
40.0
13.6
12.3
14.9
13.5
16.3
14.7
17.6
15.9
19.1
17.2
20.4
18.5
21.8
19.7
23.1
20.9
24.4
22.1
27.1
24.5
29.8
26.9
32.6
29.5
35.3
31.9
38.0
34.4
40.7
36.8
44.9
40.6
48.9
44.2
5.0
5.0
5.0
5.0
5.0
5.0
5.0
5.0
5.0
5.0
5.0
5.0
5.0
5.0
5.0
5.0
5.0
5.0
5.0
5.0
5.0
5.0
5.0
5.0
5.0
5.0
5.0
5.0
5.0
5.0
5.0
5.0
5.0
5.0
STAND-OFF
VOLTAGE
VWM
(V)
MAXIMUM
REVERSE
LEAKAGE
AT VWM
ID (μA)
MAXIMUM REVERSE
LEAKAGE
AT VWM
TJ = 175 °C
ID (μA)
10.0
10.0
11.0
11.0
12.0
12.0
13.0
13.0
14.0
14.0
15.0
15.0
16.0
16.0
17.0
17.0
18.0
18.0
20.0
20.0
22.0
22.0
24.0
24.0
26.0
26.0
28.0
28.0
30.0
30.0
33.0
33.0
36.0
36.0
15
15
10
10
10
10
10
10
10
10
10
10
10
10
10
10
10
10
10
10
10
10
10
10
10
10
10
10
10
10
10
10
10
10
250
250
150
150
150
150
150
150
150
150
150
150
150
150
150
150
150
150
150
150
150
150
150
150
150
150
150
150
150
150
150
150
150
150
MAX. PEAK
MAXIMUM
PULSE CURRENT CLAMPING
AT 10/1000 μs
VOLTAGE
WAVEFORM
AT IPPM
(A)
VC (V)
245
271
229
253
209
231
193
214
178
198
171
189
160
177
151
167
143
158
128
142
117
130
107
118
99
109
92
101
86
95
78
86
72
79
18.8
17.0
20.1
18.2
22.0
19.9
23.8
21.5
25.8
23.2
26.9
24.4
28.8
26.0
30.5
27.6
32.2
29.2
35.8
32.4
39.4
35.5
43.0
38.9
46.6
42.1
50.1
45.4
53.5
48.4
59.0
53.3
64.3
58.1
Note
• For all types maximum VF = 1.9 V at IF = 100 A measured on 8.3 ms single half sine-wave or equivalent square wave, duty cycle = 4 pulses
per minute maximum
THERMAL CHARACTERISTICS (TC = 25 °C unless otherwise noted)
PARAMETER
Typical thermal resistance, junction to case
SYMBOL
VALUE
UNIT
RJC
0.95
°C/W
ORDERING INFORMATION (Example)
PREFERRED P/N
UNIT WEIGHT (g)
PREFERRED PACKAGE CODE
BASE QUANTITY
DELIVERY MODE
SM6S10AHE3/2D (1)
2.550
2D
750
13" diameter plastic tape and reel,
anode towards the sprocket hole
SM6S10AHE3_A/I (1)
2.550
I
750
13" diameter plastic tape and reel,
anode towards the sprocket hole
Note
(1) AEC-Q101 qualified
Revision: 22-Jul-16
Document Number: 88384
2
For technical questions within your region: DiodesAmericas@vishay.com, DiodesAsia@vishay.com, DiodesEurope@vishay.com
THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT
ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000
SM6S10 thru SM6S36A
www.vishay.com
Vishay General Semiconductor
RATINGS AND CHARACTERISTICS CURVES (TA = 25 °C unless otherwise noted)
10 000
Reverse Surge Power (W)
Power Dissipation (W)
8.0
6.0
4.0
2.0
1000
0
50
0
150
100
200
Pulse Width (ms) - ½ IPP Exponential Waveform
Fig. 1 - Power Derating Curve
Fig. 4 - Reverse Power Capability
6000
Transient Thermal Impedance (°C/W)
100
Load Dump Power (W)
5000
4000
3000
2000
1000
0
50
25
150
Input Peak Pulse Current (%)
100
10
Case Temperature (°C)
75
100
150
125
RθJC
1
0.1
0.01
0.01
175
0.1
1
10
100
Case Temperature (°C)
t - Pulse Width (s)
Fig. 2 - Load Dump Power Characteristics
(10 ms Exponential Waveform)
Fig. 5 - Typical Transient Thermal Impedance
tr = 10 μs
TJ = 25 °C
Pulse Width (td) is
Defined as the Point
Where the Peak Current
Decays to 50 % of IPPM
Peak Value
IPPM
100
Half Value - IPP
IPPM
2
50
td
0
0
RθJA
10
1.0
2.0
3.0
t - Time (ms)
4.0
Fig. 3 - Pulse Waveform
Revision: 22-Jul-16
Document Number: 88384
3
For technical questions within your region: DiodesAmericas@vishay.com, DiodesAsia@vishay.com, DiodesEurope@vishay.com
THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT
ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000
SM6S10 thru SM6S36A
www.vishay.com
Vishay General Semiconductor
PACKAGE OUTLINE DIMENSIONS in inches (millimeters)
DO-218AB
0.628 (16.0)
0.592 (15.0)
0.539 (13.7)
0.524 (13.3)
Mounting Pad Layout
0.150 (3.8)
0.126 (3.2)
0.116 (3.0)
0.093 (2.4)
0.091 (2.3)
0.067 (1.7)
0.413 (10.5) 0.342 (8.7)
0.374 (9.5) 0.327 (8.3)
0.413 (10.5)
0.374 (9.5)
0.366 (9.3)
0.343 (8.7)
0.406 (10.3)
0.382 (9.7)
0.197 (5.0)
0.185 (4.7)
0.116 (3.0)
0.093 (2.4)
0.366 (9.3)
0.343 (8.7)
0.606 (15.4)
0.583 (14.8)
Lead 1
0.138 (3.5)
0.098 (2.5)
0.016 (0.4) MIN.
Lead 2/Metal Heatsink
0.098 (2.5)
0.059 (1.5)
0.028 (0.7)
0.020 (0.5)
Revision: 22-Jul-16
Document Number: 88384
4
For technical questions within your region: DiodesAmericas@vishay.com, DiodesAsia@vishay.com, DiodesEurope@vishay.com
THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT
ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000
Legal Disclaimer Notice
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Vishay
Disclaimer
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including but not limited to the warranty expressed therein.
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Revision: 13-Jun-16
1
Document Number: 91000
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