SM6S10AT thru SM6S43AT
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Vishay General Semiconductor
Surface Mount PAR® Transient Voltage Suppressors
High Temperature Stability and High Reliability Conditions
FEATURES
• Junction passivation optimized design passivated
anisotropic rectifier technology
• TJ = 175 °C capability suitable for high reliability
and automotive requirement
• Available in unidirectional polarity only
• Low leakage current
• Low forward voltage drop
• High surge capability
• Meets ISO7637-2 surge specification (varied by test
condition)
DO-218 Compatible
Anode
Cathode
• Meets MSL level 1, per J-STD-020, LF maximum peak
of 245 °C
• AEC-Q101 qualified
- Automotive ordering code: base P/NHE3
• Material categorization: for definitions of compliance
please see www.vishay.com/doc?99912
PRIMARY CHARACTERISTICS
VWM
10 V to 43 V
VBR
11.1 V to 52.8 V
PPPM (10 x 1000 μs)
4600 W
PPPM (10 x 10 000 μs)
3600 W
PD
6W
IFSM
600 A
TJ max.
175 °C
Polarity
Unidirectional
Package
DO-218AC
TYPICAL APPLICATIONS
Use in sensitive electronics protection against voltage
transients induced by inductive load switching and lighting,
especially for automotive load dump protection application.
MECHANICAL DATA
Case: DO-218AC
Molding compound meets UL 94 V-0 flammability rating
Base P/NHE3 - RoHS-compliant, AEC-Q101 qualified
Terminals: matte tin plated leads, solderable
J-STD-002 and JESD 22-B102
HE3 suffix meets JESD 201 class 2 whisker test
per
Polarity: heatsink is anode
MAXIMUM RATINGS (TC = 25 °C unless otherwise noted)
PARAMETER
Peak pulse power dissipation
SYMBOL
with 10/1000 μs waveform
with 10/10 000 μs waveform
Power dissipation on infinite heatsink at TC = 25 °C (fig. 1)
Peak pulse current with 10/1000 μs waveform
Peak forward surge current 8.3 ms single half sine-wave
Operating junction and storage temperature range
PPPM
VALUE
4600
3600
UNIT
W
PD
6.0
W
IPPM (1)
See next table
A
IFSM
600
A
TJ, TSTG
-55 to +175
°C
Note
(1) Non-repetitive current pulse at T = 25 °C
A
Revision: 26-Oct-2021
Document Number: 87735
1
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THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT
ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000
SM6S10AT thru SM6S43AT
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Vishay General Semiconductor
ELECTRICAL CHARACTERISTICS (TC = 25 °C unless otherwise noted)
BREAKDOWN
VOLTAGE
VBR (V)
MAXIMUM
REVERSE
LEAKAGE
AT VWM
ID (μA)
MAXIMUM
REVERSE
LEAKAGE
AT VWM
TJ = 175 °C
ID (μA)
MAX. PEAK
PULSE
CURRENT
AT 10/1000 μs
WAVEFORM
(A)
TYPICAL
MAXIMUM
TEMP.
CLAMPING COEFFICIENT
VOLTAGE
OF VBR (1)
AT IPPM
αT
VC (V)
(%/°C)
DEVICE
TYPE
STAND-OFF
TEST
VOLTAGE
CURRENT
VWM
IT
(mA)
(V)
MIN. NOM. MAX.
SM6S10AT
11.1
11.7
12.3
5.0
10.0
15
250
271
17.0
0.069
SM6S11AT
12.2
12.9
13.5
5.0
11.0
10
150
253
18.2
0.072
SM6S12AT
13.3
14.0
14.7
5.0
12.0
10
150
231
19.9
0.074
SM6S13AT
14.4
15.2
15.9
5.0
13.0
10
150
214
21.5
0.076
SM6S14AT
15.6
16.4
17.2
5.0
14.0
10
150
198
23.2
0.078
SM6S15AT
16.7
17.6
18.5
5.0
15.0
10
150
189
24.4
0.080
SM6S16AT
17.8
18.8
19.7
5.0
16.0
10
150
177
26.0
0.081
SM6S17AT
18.9
19.9
20.9
5.0
17.0
10
150
167
27.6
0.082
SM6S18AT
20.0
21.1
22.1
5.0
18.0
10
150
158
29.2
0.083
SM6S20AT
22.2
23.4
24.5
5.0
20.0
10
150
142
32.4
0.085
SM6S22AT
24.4
25.7
26.9
5.0
22.0
10
150
130
35.5
0.086
SM6S24AT
26.7
28.1
29.5
5.0
24.0
10
150
118
38.9
0.087
SM6S26AT
28.9
30.4
31.9
5.0
26.0
10
150
109
42.1
0.088
SM6S28AT
31.1
32.8
34.4
5.0
28.0
10
150
101
45.4
0.089
SM6S30AT
33.3
35.1
36.8
5.0
30.0
10
150
95
48.4
0.090
SM6S33AT
36.7
38.7
40.6
5.0
33.0
10
150
86
53.3
0.091
SM6S36AT
40.0
42.1
44.2
5.0
36.0
10
150
79
58.1
0.091
SM6S40AT
44.4
46.8
49.1
5.0
40.0
10
150
71
64.5
0.092
SM6S43AT
47.8
50.3
52.8
5.0
43.0
10
150
66
69.4
0.093
Notes
• For all types maximum VF = 1.9 V at IF = 100 A measured on 8.3 ms single half sine-wave or equivalent square wave, duty cycle = 4 pulses
per minute maximum
(1) To calculate V
BR vs. junction temperature, use the following formula: VBR at TJ = VBR at 25 °C x (1 + αT x (TJ - 25))
THERMAL CHARACTERISTICS (TC = 25 °C unless otherwise noted)
PARAMETER
Typical thermal resistance, junction to case
SYMBOL
VALUE
UNIT
RθJC
0.95
°C/W
ORDERING INFORMATION (Example)
PREFERRED P/N
SM6S10ATHE3/I
(1)
UNIT WEIGHT (g)
2.550
PREFERRED PACKAGE CODE
I
BASE QUANTITY
DELIVERY MODE
750
13" diameter plastic tape and reel,
anode towards the sprocket hole
Note
AEC-Q101 qualified
(1)
Revision: 26-Oct-2021
Document Number: 87735
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For technical questions within your region: DiodesAmericas@vishay.com, DiodesAsia@vishay.com, DiodesEurope@vishay.com
THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT
ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000
SM6S10AT thru SM6S43AT
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Vishay General Semiconductor
RATINGS AND CHARACTERISTICS CURVES (TA = 25 °C unless otherwise noted)
10 000
Reverse Surge Power (W)
Power Dissipation (W)
8.0
6.0
4.0
2.0
1000
0
50
0
150
100
200
Pulse Width (ms) - ½ IPP Exponential Waveform
Fig. 1 - Power Derating Curve
Fig. 4 - Reverse Power Capability
100
Transient Thermal Impedance (°C/W)
6000
Load Dump Power (W)
5000
4000
3000
2000
1000
0
50
25
150
Input Peak Pulse Current (%)
100
10
Case Temperature (°C)
75
100
150
125
175
RθJA
10
RθJC
1
0.1
0.01
0.01
0.1
1
10
100
Case Temperature (°C)
t - Pulse Width (s)
Fig. 2 - Load Dump Power Characteristics
(10 ms Exponential Waveform)
Fig. 5 - Typical Transient Thermal Impedance
tr = 10 μs
TJ = 25 °C
Pulse Width (td) is
Defined as the Point
Where the Peak Current
Decays to 50 % of IPPM
Peak Value
IPPM
100
Half Value - IPP
IPPM
2
50
td
0
0
1.0
2.0
3.0
4.0
t - Time (ms)
Fig. 3 - Pulse Waveform
Revision: 26-Oct-2021
Document Number: 87735
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For technical questions within your region: DiodesAmericas@vishay.com, DiodesAsia@vishay.com, DiodesEurope@vishay.com
THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT
ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000
SM6S10AT thru SM6S43AT
www.vishay.com
Vishay General Semiconductor
PACKAGE OUTLINE DIMENSIONS in inches (millimeters)
DO-218AC
0.628 (16.0)
0.592 (15.0)
0.539 (13.7)
0.524 (13.3)
Mounting Pad Layout
0.150 (3.8)
0.126 (3.2)
0.116 (3.0)
0.093 (2.4)
0.413 (10.5) 0.342 (8.7)
0.374 (9.5) 0.327 (8.3)
0.091 (2.3)
0.067 (1.7)
0.413 (10.5)
0.374 (9.5)
0.366 (9.3)
0.343 (8.7)
0.116 (3.0)
0.093 (2.4)
0.366 (9.3)
0.343 (8.7)
0.606 (15.4)
0.583 (14.8)
0.406 (10.3)
0.382 (9.7)
Lead 1
0.197 (5.0)
0.185 (4.7)
0.004 (0.10) (NOM.)
Lead 2 / metal heatsink
0.138 (3.5)
0.098 (2.5)
0.028 (0.7)
0.020 (0.5)
0.098 (2.5)
0.059 (1.5)
Revision: 26-Oct-2021
Document Number: 87735
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For technical questions within your region: DiodesAmericas@vishay.com, DiodesAsia@vishay.com, DiodesEurope@vishay.com
THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT
ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000
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Revision: 01-Jan-2023
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Document Number: 91000