SM6T6V8CA-E3/52

SM6T Series www.vishay.com Vishay General Semiconductor Surface-Mount TRANSZORB® Transient Voltage Suppressors FEATURES • Low profile package Available • Ideal for automated placement • Glass passivated chip junction • Available in unidirectional and bidirectional • 600 W peak pulse power capability with a 10/1000 μs waveform Available • Excellent clamping capability SMB (DO-214AA) Cathode • Low inductance • Meets MSL level 1, per J-STD-020, LF maximum peak of 260 °C Anode (unidirectional) (bidirectional) LINKS TO ADDITIONAL RESOURCES 3D 3D • AEC-Q101 qualified available - Automotive ordering code: base P/NHE3 or P/NHM3 • Material categorization: for definitions of compliance please see www.vishay.com/doc?99912 TYPICAL APPLICATIONS 3D Models Use in sensitive electronics protection against voltage transients induced by inductive load switching and lighting on ICs, MOSFET, signal lines of sensor units for consumer, computer, industrial, automotive, and telecommunication. PRIMARY CHARACTERISTICS VWM 5.80 V to 188 V VBR unidirectional 6.8 V to 220 V MECHANICAL DATA VBR bidirectional 6.8 V to 220 V PPPM 600 W Case: SMB (DO-214AA) Molding compound meets UL 94 V-0 flammability rating Base P/N-E3 - RoHS-compliant, commercial grade Base P/N-M3 - halogen-free, RoHS-compliant, commercial grade Base P/NHE3_X - RoHS-compliant and AEC-Q101 qualified Base P/NHM3_X - halogen-free, RoHS-compliant, and AEC-Q101 qualified (“_X” denotes revision code e.g. A, B, ...) PD 5.0 W IFSM (unidirectional only) 100 A TJ max. 150 °C Polarity Unidirectional, bidirectional Package SMB (DO-214AA) DEVICES FOR BIDIRECTION APPLICATIONS For bidirectional devices use CA suffix (e.g. SM6T12CA). Electrical characteristics apply in both directions. Terminals: matte tin plated leads, solderable per J-STD-002 and JESD 22-B102 E3, M3, HE3, and HM3 suffix meets JESD 201 class 2 whisker test Polarity: for unidirectional types the band denotes cathode end, no marking on bidirectional types MAXIMUM RATINGS (TA = 25 °C unless otherwise noted) PARAMETER Peak power dissipation with a 10/1000 μs waveform (1)(2) (fig. 1) Peak pulse current with a 10/1000 μs waveform (1) (fig. 3) Power dissipation on infinite heatsink at TA = 50 °C Peak forward surge current 10 ms single half sine-wave unidirectional only (2) Operating junction and storage temperature range SYMBOL VALUE UNIT PPPM 600 W IPPM See next table A PD 5.0 W IFSM 100 A TJ, TSTG -65 to +150 °C Notes (1) Non-repetitive current pulse, per fig. 3 and derated above T = 25 °C per fig. 2 A (2) Mounted on 0.2" x 0.2" (5.0 mm x 5.0 mm) copper pads to each terminal Revision: 29-Sep-2022 Document Number: 88385 1 For technical questions within your region: DiodesAmericas@vishay.com, DiodesAsia@vishay.com, DiodesEurope@vishay.com THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000 SM6T Series www.vishay.com Vishay General Semiconductor ELECTRICAL CHARACTERISTICS (TA = 25 °C unless otherwise noted) DEVICE MARKING CODE TYPE (1) BREAKDOWN VOLTAGE VBR AT IT (2) (V) TEST CURRENT IT (mA) STAND-OFF VOLTAGE VRM (V) LEAKAGE CURRENT IRM AT VRM (μA) CLAMPING VOLTAGE VC AT IPPM 10/1000 μs CLAMPING VOLTAGE VC AT IPPM 8/20 μs αT MAX. 10-4/°C UNI BI MIN. MAX. (V) (A) (V) (A) SM6T6V8A KE7 KE7 6.45 7.14 10 5.80 1000 10.5 57.0 13.4 298 5.7 SM6T7V5A KK7 AK7 7.13 7.88 10 6.40 500 11.3 53.0 14.5 276 6.1 7.3 SM6T10A KT7 AT7 9.50 10.5 1.0 8.55 10.0 14.5 41.0 18.6 215 SM6T12A KX7 AX7 11.4 12.6 1.0 10.2 5.0 16.7 36.0 21.7 184 7.8 SM6T15A LG7 LG7 14.3 15.8 1.0 12.8 1.0 21.2 28.0 27.2 147 8.4 SM6T18A LM7 BM7 17.1 18.9 1.0 15.3 1.0 25.2 24.0 32.5 123 8.8 SM6T22A LT7 BT7 20.9 23.1 1.0 18.8 1.0 30.6 20.0 39.3 102 9.2 SM6T24A LV7 LV7 22.8 25.2 1.0 20.5 1.0 33.2 18.0 42.8 93 9.4 SM6T27A LX7 BX7 25.7 28.4 1.0 23.1 1.0 37.5 16.0 48.3 83 9.6 SM6T30A ME7 CE7 28.5 31.5 1.0 25.6 1.0 41.5 14.5 53.5 75 9.7 SM6T33A MG7 MG7 31.4 34.7 1.0 28.2 1.0 45.7 13.1 59 68 9.8 SM6T36A MK7 CK7 34.2 37.8 1.0 30.8 1.0 49.9 12.0 64.3 62 9.9 SM6T39A MM7 CM7 37.1 41.0 1.0 33.3 1.0 53.9 11.1 69.7 57 10.0 SM6T68A NG7 NG7 64.6 71.4 1.0 58.1 1.0 92.0 6.50 121 33 10.4 SM6T100A NV7 NV7 95.0 105 1.0 85.5 1.0 137 4.40 178 22.5 10.6 SM6T150A PK7 PK7 143 158 1.0 128 1.0 207 2.90 265 15 10.8 SM6T200A PR7 PR7 190 210 1.0 171 1.0 274 2.20 353 11.3 10.8 SM6T220A PR8 PR8 209 231 1.0 188 1.0 328 2.00 388 10.3 10.8 Notes (1) For bidirectional devices add suffix “CA” (2) V BR measured after IT applied for 300 μs square wave pulse (3) For bi-polar devices with V RM = 10 V or under, the IRM limit is doubled THERMAL CHARACTERISTICS (TA = 25 °C unless otherwise noted) PARAMETER SYMBOL VALUE Typical thermal resistance, junction to ambient air (1) RθJA 100 Typical thermal resistance, junction to lead RθJL 20 UNIT °C/ W Note (1) Mounted on minimum recommended pad layout ORDERING INFORMATION (Example) PREFERRED P/N SM6T10A-E3/52 SM6T10A-M3/52 SM6T10A-E3/5B SM6T10A-M3/5B SM6T10AHE3_B/H (1) SM6T10AHM3_B/H (1) SM6T10AHE3_B/I (1) SM6T10AHM3_B/I (1) UNIT WEIGHT (g) PREFERRED PACKAGE CODE BASE QUANTITY DELIVERY MODE 0.096 52 750 7" diameter plastic tape and reel 0.096 5B 3200 13" diameter plastic tape and reel 0.096 H 750 7" diameter plastic tape and reel 0.096 I 3200 13" diameter plastic tape and reel Note AEC-Q101 qualified (1) Revision: 29-Sep-2022 Document Number: 88385 2 For technical questions within your region: DiodesAmericas@vishay.com, DiodesAsia@vishay.com, DiodesEurope@vishay.com THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000 SM6T Series www.vishay.com Vishay General Semiconductor RATINGS AND CHARACTERISTICS CURVES (TA = 25 °C unless otherwise noted) 6000 10 1 0.2 x 0.2" (5.0 x 5.0 mm) Copper Pad Areas 0.1 0.1 µs Measured at Zero Bias 1000 VR, Measured at Stand-Off Voltage VWM 100 TJ = 25 °C f = 1.0 MHz Vsig = 50 mVp-p Uni-Directional Bi-Directional 10 1.0 µs 10 µs 100 µs 1.0 ms 1 10 ms 10 100 td - Pulse Width (s) VWM - Reverse Stand-Off Voltage (V) Fig. 1 - Peak Pulse Power Rating Curve Fig. 4 - Typical Junction Capacitance 200 100 100 Transient Thermal Impedance (°C/W) Peak Pulse Power (PPP) or Current (IPP) Derating in Percentage, % CJ - Junction Capacitance (pF) PPPM - Peak Pulse Power (kW) 100 75 50 25 25 50 75 100 125 150 175 1.0 0.1 0.001 0 0 10 200 0.01 0.1 1 10 100 1000 TJ - Initial Temperature (°C) t - Pulse Duration (s) Fig. 2 - Pulse Power or Current vs. Initial Junction Temperature Fig. 5 - Typical Transient Thermal Impedance 200 TJ = 25 °C Pulse Width (td) is defined as the Point where the Peak Current decays to 50 % of IPPM tr = 10 µs Peak Value IPPM 100 Peak Forward Surge Current (A) IPPM - Peak Pulse Current, % IRSM 150 Half Value - IPP IPPM 2 50 10/1000 µs Waveform as defined by R.E.A. 8.3 ms Single Half Sine-Wave Uni-Directional Only 100 td 10 0 0 1.0 2.0 3.0 4.0 1 10 100 t - Time (ms) Number of Cycles at 60 Hz Fig. 3 - Pulse Waveform Fig. 6 - Maximum Non-Repetitive Peak Forward Surge Current Revision: 29-Sep-2022 Document Number: 88385 3 For technical questions within your region: DiodesAmericas@vishay.com, DiodesAsia@vishay.com, DiodesEurope@vishay.com THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000 SM6T Series www.vishay.com Vishay General Semiconductor PACKAGE OUTLINE DIMENSIONS in inches (millimeters) SMB (DO-214AA) Cathode Band Mounting Pad Layout 0.085 (2.159) MAX. 0.155 (3.94) 0.130 (3.30) 0.086 (2.20) 0.077 (1.95) 0.086 (2.18) MIN. 0.180 (4.57) 0.160 (4.06) 0.060 (1.52) MIN. 0.012 (0.305) 0.006 (0.152) 0.220 (5.59) REF. 0.096 (2.44) 0.084 (2.13) 0.060 (1.52) 0.030 (0.76) 0.008 (0.2) 0 (0) 0.220 (5.59) 0.205 (5.21) Revision: 29-Sep-2022 Document Number: 88385 4 For technical questions within your region: DiodesAmericas@vishay.com, DiodesAsia@vishay.com, DiodesEurope@vishay.com THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. 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