SM8A27HE3/2D

SM8A27 www.vishay.com Vishay General Semiconductor Surface Mount PAR® Transient Voltage Suppressors High Temperature Stability and High Reliability Conditions FEATURES • Junction passivation optimized design passivated anisotropic rectifier technology • TJ = 175 °C capability suitable for high reliability and automotive requirement • Low leakage current • Low forward voltage drop • High surge capability DO-218AB Anode • Meets ISO7637-2 surge specification • Meets MSL level 1, per J-STD-020, LF maximum peak of 245 °C Cathode • AEC-Q101 qualified • Material categorization: for definitions of compliance please see www.vishay.com/doc?99912 PRIMARY CHARACTERISTICS TYPICAL APPLICATIONS VBR 27 V PPPM (10 x 1000 μs) 6600 W PD 8W VWM 22 V IRSM 130 A IFSM 700 A TJ max. 175 °C Polarity Unidirectional Package DO-218AB Use in sensitive electronics protection against voltage transients induced by inductive load switching and lighting, especially for automotive load dump protection application. MECHANICAL DATA Case: DO-218AB Molding compound meets UL 94 V-0 flammability rating Base P/NHE3 - RoHS-compliant, AEC-Q101 qualified Terminals: matte tin plated leads, solderable J-STD-002 and JESD 22-B102 HE3 suffix meets JESD 201 class 2 whisker test per Polarity: heatsink is anode MAXIMUM RATINGS (TC = 25 °C unless otherwise noted) PARAMETER SYMBOL VALUE PPPM 6600 W PD 8.0 W Non-repetitive peak reverse surge current for 10 μs/10 ms exponentially decaying waveform IRSM 130 A Maximum working stand-off voltage VWM 22.0 V Peak forward surge current 8.3 ms single half sine-wave IFSM 700 A TJ, TSTG -55 to +175 °C Peak pulse power dissipation with 10/1000 μs waveform Power dissipation on infinite heatsink at TC = 25 °C (fig. 1) Operating junction and storage temperature range UNIT ELECTRICAL CHARACTERISTICS (TA = 25 °C unless otherwise noted) DEVICE TYPE SM8A27 BREAKDOWN VOLTAGE VBR AT IT (V) MIN. MAX. 24 30 TEST CURRENT IT (mA) STAND-OFF VOLTAGE VWM (V) 10 22 Revision: 26-Oct-2021 Document Number: 88386 1 For technical questions within your region: DiodesAmericas@vishay.com, DiodesAsia@vishay.com, DiodesEurope@vishay.com THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000 SM8A27 www.vishay.com Vishay General Semiconductor ADDITIONAL CHARACTERISTICS (TC = 25 °C unless otherwise noted) PARAMETER SYMBOL MIN. TYP. MAX. UNIT Zener voltage temperature coefficient IZ = 10 mA TEST CONDITIONS VZTC - - 36 mV/°C Clamping voltage for 10 μs/10 ms exponentially decaying waveform IPP = 75 A VC - - 40.0 V - - 0.98 - 0.93 - IF = 6.0 A Instantaneous forward voltage VF (1) IF = 100 A Reverse leakage current Rated VWM TJ = 25 °C TJ = 175 °C IR - - 1.0 - - 50.0 V μA Note (1) Measured on a 300 μs square pulse width THERMAL CHARACTERISTICS (TC = 25 °C unless otherwise noted) PARAMETER Typical thermal resistance, junction to case SYMBOL VALUE UNIT RθJC 0.90 °C/W ORDERING INFORMATION (Example) PREFERRED P/N UNIT WEIGHT (g) SM8A27HE3/2D (1) PREFERRED PACKAGE CODE 2.605 BASE QUANTITY DELIVERY MODE 750 13" diameter plastic tape and reel, anode towards the sprocket hole 2D Note (1) AEC-Q101 qualified RATINGS AND CHARACTERISTICS CURVES (TA = 25 °C unless otherwise noted) 6000 8.0 Load Dump Power (W) Power Dissipation (W) 5000 6.0 4.0 2.0 4000 3000 2000 1000 0 0 0 50 100 150 200 25 50 75 100 125 150 175 Case Temperature (°C) Case Temperature (°C) Fig. 1 - Power Derating Curve Fig. 2 - Load Dump Power Characteristics (10 ms Exponential Waveform) Revision: 26-Oct-2021 Document Number: 88386 2 For technical questions within your region: DiodesAmericas@vishay.com, DiodesAsia@vishay.com, DiodesEurope@vishay.com THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000 SM8A27 www.vishay.com tr = 10 μs 100 TJ = 25 °C Pulse Width (td) is Defined as the Point Where the Peak Current Decays to 50 % of IPPM Peak Value IPPM Instantaneous Reverse Current (μA) Input Peak Pulse Current (%) 150 Vishay General Semiconductor 100 Half Value - IPP IPPM 2 50 td 0 10 TJ = 175 °C 1 0.1 0.01 TJ = 25 °C 0.001 0.0001 10 0 30 20 40 5 20 35 50 65 80 t - Time (ms) Percentage of VBR (%) Fig. 3 - Pulse Waveform Fig. 6 - Typical Reverse Characteristics 10 000 95 Reverse Surge Power (W) Transient Thermal Impedance (°C/W) 100 1000 100 10 RθJA 10 RθJC 1 0.1 0.01 0.01 0.1 1 10 100 Pulse Width (ms) - ½ IPP Exponential Waveform t - Pulse Width (s) Fig. 4 - Reverse Power Capability Fig. 7 - Typical Transient Thermal Impedance Instantaneous Forward Current (A) 100 TJ = 150 °C 10 TJ = 25 °C 1.0 0.1 0.01 0.35 0.45 0.55 0.65 0.75 0.85 0.95 Instantaneous Forward Voltage (V) Fig. 5 - Typical Instantaneous Forward Characteristics Revision: 26-Oct-2021 Document Number: 88386 3 For technical questions within your region: DiodesAmericas@vishay.com, DiodesAsia@vishay.com, DiodesEurope@vishay.com THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000 SM8A27 www.vishay.com Vishay General Semiconductor PACKAGE OUTLINE DIMENSIONS in inches (millimeters) DO-218AB 0.628 (16.0) 0.592 (15.0) 0.539 (13.7) 0.524 (13.3) Mounting Pad Layout 0.150 (3.8) 0.126 (3.2) 0.116 (3.0) 0.093 (2.4) 0.091 (2.3) 0.067 (1.7) 0.413 (10.5) 0.342 (8.7) 0.374 (9.5) 0.327 (8.3) 0.413 (10.5) 0.374 (9.5) 0.366 (9.3) 0.343 (8.7) 0.406 (10.3) 0.382 (9.7) 0.197 (5.0) 0.185 (4.7) 0.116 (3.0) 0.093 (2.4) 0.366 (9.3) 0.343 (8.7) 0.606 (15.4) 0.583 (14.8) Lead 1 0.138 (3.5) 0.098 (2.5) 0.016 (0.4) MIN. Lead 2/Metal Heatsink 0.098 (2.5) 0.059 (1.5) 0.028 (0.7) 0.020 (0.5) Revision: 26-Oct-2021 Document Number: 88386 4 For technical questions within your region: DiodesAmericas@vishay.com, DiodesAsia@vishay.com, DiodesEurope@vishay.com THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. 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