SM8S12ATHE3/I

SM8S10AT thru SM8S43AT www.vishay.com Vishay General Semiconductor Surface Mount PAR® Transient Voltage Suppressors High Temperature Stability and High Reliability Conditions FEATURES • Junction passivation optimized design passivated anisotropic rectifier technology • TJ = 175 °C capability suitable for high reliability and automotive requirement • Available in unidirectional polarity only • Low leakage current • Low forward voltage drop • High surge capability • Meets ISO7637-2 surge specification (varied by test condition) DO-218 Compatible Anode Cathode • Meets MSL level 1, per J-STD-020, LF maximum peak of 245 °C • AEC-Q101 qualified - Automotive ordering code: base P/NHE3 • Material categorization: for definitions of compliance please see www.vishay.com/doc?99912 PRIMARY CHARACTERISTICS VBR 11.1 V to 52.8 V PPPM (10 x 1000 μs) 6600 W PPPM (10 x 10 000 μs) 5200 W PD 8W VWM 10 V to 43 V IFSM 700 A TJ max. 175 °C Polarity Unidirectional Package DO-218AC TYPICAL APPLICATIONS Use in sensitive electronics protection against voltage transients induced by inductive load switching and lighting, especially for automotive load dump protection application. MECHANICAL DATA Case: DO-218AC Molding compound meets UL 94 V-0 flammability rating Base P/NHE3 - RoHS-compliant, AEC-Q101 qualified Terminals: matte tin plated leads, solderable J-STD-002 and JESD 22-B102 HE3 suffix meets JESD 201 class 2 whisker test per Polarity: heatsink is anode MAXIMUM RATINGS (TC = 25 °C unless otherwise noted) PARAMETER SYMBOL with 10/10 000 μs waveform Power dissipation on infinite heatsink at TC = 25 °C (fig. 1) Peak pulse current with 10/1000 μs waveform Peak forward surge current 8.3 ms single half sine-wave Operating junction and storage temperature range UNIT 6600 with 10/1000 μs waveform Peak pulse power dissipation VALUE PPPM PD W 5200 8.0 W See next table A IFSM 700 A TJ, TSTG -55 to +175 °C IPPM (1) Note (1) Non-repetitive current pulse derated above T = 25 °C A Revision: 26-Oct-2021 Document Number: 87734 1 For technical questions within your region: DiodesAmericas@vishay.com, DiodesAsia@vishay.com, DiodesEurope@vishay.com THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000 SM8S10AT thru SM8S43AT www.vishay.com Vishay General Semiconductor ELECTRICAL CHARACTERISTICS (TC = 25 °C unless otherwise noted) BREAKDOWN VOLTAGE VBR (V) DEVICE TYPE MIN. NOM. MAX. TEST CURRENT IT (mA) STAND-OFF VOLTAGE VWM (V) MAXIMUM REVERSE LEAKAGE AT VWM ID (μA) MAXIMUM REVERSE LEAKAGE AT VWM TJ = 175 °C ID (μA) MAX. PEAK PULSE CURRENT AT 10/1000 μs WAVEFORM (A) TYPICAL MAXIMUM TEMP. CLAMPING COEFFICIENT VOLTAGE OF VBR (1) AT IPPM αT VC (V) (%/°C) SM8S10AT 11.1 11.7 12.3 5.0 10.0 15 250 388 17.0 0.069 SM8S11AT 12.2 12.9 13.5 5.0 11.0 10 150 363 18.2 0.072 SM8S12AT 13.3 14.0 14.7 5.0 12.0 10 150 332 19.9 0.074 SM8S13AT 14.4 15.2 15.9 5.0 13.0 10 150 307 21.5 0.076 SM8S14AT 15.6 16.4 17.2 5.0 14.0 10 150 284 23.2 0.078 SM8S15AT 16.7 17.6 18.5 5.0 15.0 10 150 270 24.4 0.080 SM8S16AT 17.8 18.8 19.7 5.0 16.0 10 150 254 26.0 0.081 SM8S17AT 18.9 19.9 20.9 5.0 17.0 10 150 239 27.6 0.082 SM8S18AT 20.0 21.1 22.1 5.0 18.0 10 150 226 29.2 0.083 SM8S20AT 22.2 23.4 24.5 5.0 20.0 10 150 204 32.4 0.085 SM8S22AT 24.4 25.7 26.9 5.0 22.0 10 150 186 35.5 0.086 SM8S24AT 26.7 28.1 29.5 5.0 24.0 10 150 170 38.9 0.087 SM8S26AT 28.9 30.4 31.9 5.0 26.0 10 150 157 42.1 0.088 SM8S28AT 31.1 32.8 34.4 5.0 28.0 10 150 145 45.4 0.089 SM8S30AT 33.3 35.1 36.8 5.0 30.0 10 150 136 48.4 0.090 SM8S33AT 36.7 38.7 40.6 5.0 33.0 10 150 124 53.3 0.091 SM8S36AT 40.0 42.1 44.2 5.0 36.0 10 150 114 58.1 0.091 SM8S40AT 44.4 46.8 49.1 5.0 40 10 150 102 64.5 0.092 SM8S43AT 47.8 50.3 52.8 5.0 43 10 150 95.1 69.4 0.093 Note • For all types maximum VF = 1.8 V at IF = 100 A measured on 8.3 ms single half sine-wave or equivalent square wave, duty cycle = 4 pulses per minute maximum (1) To calculate V BR vs. junction temperature, use the following formula: VBR at TJ = VBR at 25 °C x (1 + αT x (TJ - 25)) THERMAL CHARACTERISTICS (TC = 25 °C unless otherwise noted) PARAMETER Typical thermal resistance, junction to case SYMBOL VALUE UNIT RθJC 0.90 °C/W ORDERING INFORMATION (Example) PREFERRED P/N UNIT WEIGHT (g) PREFERRED PACKAGE CODE BASE QUANTITY DELIVERY MODE SM8S10ATHE3/I (1) 2.605 I 750 13" diameter plastic tape and reel, anode towards the sprocket hole Note (1) AEC-Q101 qualified Revision: 26-Oct-2021 Document Number: 87734 2 For technical questions within your region: DiodesAmericas@vishay.com, DiodesAsia@vishay.com, DiodesEurope@vishay.com THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000 SM8S10AT thru SM8S43AT www.vishay.com Vishay General Semiconductor RATINGS AND CHARACTERISTICS CURVES (TA = 25 °C unless otherwise noted) 10 000 Reverse Surge Power (W) Power Dissipation (W) 8.0 6.0 4.0 2.0 1000 0 50 0 150 100 200 Pulse Width (ms) - ½ IPP Exponential Waveform Fig. 1 - Power Derating Curve Fig. 4 - Reverse Power Capability 100 Transient Thermal Impedance (°C/W) 6000 Load Dump Power (W) 5000 4000 3000 2000 1000 0 50 25 75 100 150 125 RθJA 10 RθJC 1 0.1 0.01 0.01 175 0.1 1 10 100 Case Temperature (°C) t - Pulse Width (s) Fig. 2 - Load Dump Power Characteristics (10 ms Exponential Waveform) Fig. 5 - Typical Transient Thermal Impedance tr = 10 μs 100 000 TJ = 25 °C Pulse Width (td) is Defined as the Point Where the Peak Current Decays to 50 % of IPPM Peak Value IPPM CJ - Junction Capacitance (pF) 150 Input Peak Pulse Current (%) 100 10 Case Temperature (°C) 100 Half Value - IPP IPPM 2 50 TJ = 25 °C f = 1.0 MHz Vsig = 50 mVp-p Measured at Zero Bias 10 000 Measured at Stand-Off Voltage VWM td 0 1000 0 10 20 30 40 10 15 20 25 30 35 40 t - Time (ms) VWM - Reverse Stand-Off Voltage (V) Fig. 3 - Pulse Waveform Fig. 6 - Typical Junction Capacitance 45 Revision: 26-Oct-2021 Document Number: 87734 3 For technical questions within your region: DiodesAmericas@vishay.com, DiodesAsia@vishay.com, DiodesEurope@vishay.com THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000 SM8S10AT thru SM8S43AT www.vishay.com Vishay General Semiconductor PACKAGE OUTLINE DIMENSIONS in inches (millimeters) DO-218AC 0.628 (16.0) 0.592 (15.0) 0.539 (13.7) 0.524 (13.3) Mounting Pad Layout 0.150 (3.8) 0.126 (3.2) 0.116 (3.0) 0.093 (2.4) 0.413 (10.5) 0.342 (8.7) 0.374 (9.5) 0.327 (8.3) 0.091 (2.3) 0.067 (1.7) 0.413 (10.5) 0.374 (9.5) 0.366 (9.3) 0.343 (8.7) 0.116 (3.0) 0.093 (2.4) 0.366 (9.3) 0.343 (8.7) 0.606 (15.4) 0.583 (14.8) 0.406 (10.3) 0.382 (9.7) Lead 1 0.197 (5.0) 0.185 (4.7) 0.004 (0.10) (NOM.) Lead 2 / metal heatsink 0.138 (3.5) 0.098 (2.5) 0.028 (0.7) 0.020 (0.5) 0.098 (2.5) 0.059 (1.5) Revision: 26-Oct-2021 Document Number: 87734 4 For technical questions within your region: DiodesAmericas@vishay.com, DiodesAsia@vishay.com, DiodesEurope@vishay.com THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. 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