SMAJ530HE3_A/H

SMAJ530, SMAJ550 www.vishay.com Vishay General Semiconductor Surface-Mount TRANSZORB® Transient Voltage Suppressors FEATURES • Glass passivated chip junction Available • Available in unidirectional polarity only • Excellent clamping capability • Very fast response time • Low incremental surge resistance • Meets MSL level 1, per LF maximum peak of 260 °C SMA (DO-214AC) Cathode J-STD-020, Available • AEC-Q101 qualified available - Automotive ordering code: base P/NHM3 Anode • Material categorization: for definitions of compliance please see www.vishay.com/doc?99912 LINKS TO ADDITIONAL RESOURCES 3D 3D TYPICAL APPLICATIONS 3D Models Use in sensitive electronics protection against voltage transients induced by inductive load switching and lighting on ICs, MOSFET, signal lines of sensor units for consumer, computer, industrial, automotive, and telecommunication. PRIMARY CHARACTERISTICS VBR (unidirectional) 530 V to 550 V VWM 477 V, 495 V PPPM 300 W PD 2.5 W IFSM (unidirectional only) 40 A TJ max. 150 °C MECHANICAL DATA Polarity Unidirectional Package SMA (DO-214AC) Case: SMA (DO-214AC) Molding compound meets UL 94 V-0 flammability rating Base P/N-M3 - halogen-free, RoHS-compliant, and industrial grade Base P/NHM3_X - halogen-free, RoHS-compliant, and AEC-Q101 qualified (“_X” denotes revision code e.g. A, B, ...) APPLICATION NOTES • Respect thermal resistance (PCB layout) - as the temperature coefficient also contributes to the clamping voltage Terminals: matte tin plated leads, solderable per J-STD-002 and JESD 22-B102 M3 and HM3 suffix meet JESD 201 class 2 whisker test Polarity: color band denotes cathode end • Select minimum breakdown voltage, so you get acceptable power dissipation and PCB tie point temperature • Devices with higher breakdown voltage will have a shorter conduction time and will dissipate less power • Clamping voltage is influenced by internal resistance design approximation is 7 V per 100 mA slope • Keep temperature of TVS lower than TOPSwitch® as a recommendation • Maximum current is determined by the maximum TJ and can be higher than 300 mA • Contact supplier for current arrangements different clamping voltage/ • Minimum breakdown voltage can be customized for other applications. Contact supplier • TOPSwitch is a Integrations, Inc. registered trademark of Power Revision: 19-Apr-2021 Document Number: 88391 1 For technical questions within your region: DiodesAmericas@vishay.com, DiodesAsia@vishay.com, DiodesEurope@vishay.com THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000 SMAJ530, SMAJ550 www.vishay.com Vishay General Semiconductor MAXIMUM RATINGS (TA = 25 °C unless otherwise noted) PARAMETER SYMBOL SMAJ530 SMAJ550 HD SB Device marking code Peak pulse power dissipation (1)(2)(4) (fig. 1) Power dissipation on infinite heatsink (3) Operating junction and storage temperature range UNIT PPPM 300 W PD 2.5 W TJ, TSTG -55 to +150 °C Notes (1) Non-repetitive current pulse, per fig. 3 and derated above 25 °C per fig. 2 (2) Mounted on 0.2" x 0.2" (5.0 mm x 5.0 mm) copper pads to each terminal (3) Lead temperature at T = 75 °C L (4) Peak pulse power waveform is 10/1000 μs ELECTRICAL CHARACTERISTICS (TA = 25 °C unless otherwise noted) BREAKDOWN VOLTAGE VBR AT IT (V) DEVICE TYPE MIN. TEST CURRENT IT (μA) STAND-OFF VOLTAGE VWM (V) SMAJ530 530 100 477 SMAJ550 550 100 495 ADDITIONAL CHARACTERISTICS (TA = 25 °C unless otherwise noted) PARAMETER TEST CONDITIONS SYMBOL Max. clamping voltage 400 mA, 10/1000 μs waveform VC 760 V Maximum DC reverse leakage current VWM ID 1.0 μA Typical temperature coefficient of VBR 650 mV/°C 0V 90 Typical capacitance (1) SMAJ530 CJ 200 V SMAJ550 UNIT pF 7.5 Note Measured at 1 MHz (1) THERMAL CHARACTERISTICS (TA = 25 °C unless otherwise noted) PARAMETER SYMBOL SMAJ530 SMAJ550 Typical thermal resistance, junction to lead RθJL 30 Typical thermal resistance, junction to ambient (1) RθJA 120 UNIT °C/ W Note (1) Mounted on minimum recommended pad layout ORDERING INFORMATION (Example) PREFERRED P/N UNIT WEIGHT (g) PREFERRED PACKAGE CODE BASE QUANTITY DELIVERY MODE SMAJ530-M3/61 0.064 61 1800 7" diameter plastic tape and reel 0.064 5A 7500 13" diameter plastic tape and reel 0.064 H 1800 7" diameter plastic tape and reel 0.064 I 7500 13" diameter plastic tape and reel SMAJ530-M3/5A SMAJ530HM3_B/H (1) SMAJ530HM3_B/I (1) Note AEC-Q101 qualified (1) Revision: 19-Apr-2021 Document Number: 88391 2 For technical questions within your region: DiodesAmericas@vishay.com, DiodesAsia@vishay.com, DiodesEurope@vishay.com THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000 SMAJ530, SMAJ550 www.vishay.com Vishay General Semiconductor RATINGS AND CHARACTERISTICS CURVES (TA = 25 °C unless otherwise noted) 150 Non-Repetitive Pulse Waveform shown in Fig. 3 TA = 25 °C 10 1 Peak Pulse Power (PPP) or Current (IPP) Derating in Percentage, % 0.1 0.1 µs IPPM - Peak Pulse Current, % IRSM PPPM - Peak Pulse Power (kW) 100 TJ = 25 °C Pulse Width (td) is defined as the Point where the Peak Current decays to 50 % of IPPM tr = 10 µs Peak Value IPPM 100 Half Value - IPP IPPM 2 50 10/1000 µs Waveform as defined by R.E.A. td 0 1.0 µs 10 µs 100 µs 1.0 ms 10 ms 0 1.0 2.0 3.0 td - Pulse Width (s) t - Time (ms) Fig. 1 - Peak Pulse Power Rating Curve Fig. 3 - Pulse Waveform 4.0 100 75 50 25 0 0 25 50 75 100 125 150 175 200 TJ - Initial Temperature (°C) Fig. 2 - Pulse Power or Current vs. Initial Junction Temperature Revision: 19-Apr-2021 Document Number: 88391 3 For technical questions within your region: DiodesAmericas@vishay.com, DiodesAsia@vishay.com, DiodesEurope@vishay.com THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000 SMAJ530, SMAJ550 www.vishay.com Vishay General Semiconductor PACKAGE OUTLINE DIMENSIONS in inches (millimeters) SMA (DO-214AC) Cathode Band Mounting Pad Layout 0.110 (2.79) 0.100 (2.54) 0.065 (1.65) 0.049 (1.25) 0.177 (4.50) 0.157 (3.99) 0.012 (0.305) 0.006 (0.152) 0.060 (1.52) MIN. 0.208 (5.28) REF. 0.090 (2.29) 0.078 (1.98) 0.060 (1.52) 0.030 (0.76) 0.074 (1.88) MAX. 0.066 (1.68) MIN. 0.008 (0.203) 0 (0) 0.208 (5.28) 0.194 (4.93) Revision: 19-Apr-2021 Document Number: 88391 4 For technical questions within your region: DiodesAmericas@vishay.com, DiodesAsia@vishay.com, DiodesEurope@vishay.com THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. 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