SMB8J30CA-M3/5B

SMB10(8)J5.0(C)A thru SMB10(8)J40(C)A www.vishay.com Vishay General Semiconductor High Power Density Surface-Mount TRANSZORB® Transient Voltage Suppressors FEATURES • Low profile package • Ideal for automated placement • Glass passivated pellet chip junction • Available in unidirectional and bidirectional • Excellent clamping capability • Very fast response time • Low incremental surge resistance SMB (DO-214AA) • Meets MSL level 1, per J-STD-020, LF maximum peak of 260 °C LINKS TO ADDITIONAL RESOURCES 3D 3D • Material categorization: for definitions of compliance please see www.vishay.com/doc?99912 TYPICAL APPLCIATIONS 3D Models PRIMARY CHARACTERISTICS VBR (unidirectional) 6.4 V to 49.1 V VBR (bidirectional) 6.4 V to 49.1 V VWM 5.0 V to 40 V PPPM (unidirectional) 1000 W PPPM (bidirectional) 800 W IFSM (unidirectional only) 100 A TJ max. 150 °C Polarity Unidirectional, bidirectional Package SMB (DO-214AA) Use in sensitive electronics protection against voltage transients induced by inductive load switching and lighting on ICs, MOSFET, signal lines of sensor units for consumer, computer, industrial, and telecommunication. MECHANICAL DATA Case: SMB (DO-214AA) Molding compound meets UL 94 V-0 flammability rating Base P/N-M3 - halogen-free, RoHS-compliant, and commercial grade Terminals: matte tin plated leads, solderable J-STD-002 and JESD22-B102 M3 suffix meets JESD 201 class 2 whisker test per Polarity: for unidirectional types the color band denotes cathode end, no marking on bidirectional types MAXIMUM RATINGS (TA = 25 °C, unless otherwise noted) PARAMETER Peak pulse power dissipation with a 10/1000 μs waveform (fig. 1) SYMBOL unidirectional bidirectional Peak pulse current with a 10/1000 μs waveform Peak forward surge current 8.3 ms single half sine-wave unidirectional only Operating junction and storage temperature range PPPM (1)(2) IPPM (1) IFSM (2) TJ, TSTG VALUE 1000 800 UNIT W See next table A 100 A -55 to +150 °C Notes (1) Non-repetitive current pulse, per fig. 3 and derated above T = 25 °C per fig. 2 A (2) Mounted on 0.2" x 0.2" (5.0 mm x 5.0 mm) copper pads to each terminal Revision: 20-Jul-2020 Document Number: 89424 1 For technical questions within your region: DiodesAmericas@vishay.com, DiodesAsia@vishay.com, DiodesEurope@vishay.com THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000 SMB10(8)J5.0(C)A thru SMB10(8)J40(C)A www.vishay.com Vishay General Semiconductor UNIDIRECTIONAL ELECTRICAL CHARACTERISTICS (TA = 25 °C unless otherwise noted) DEVICE TYPE DEVICE MARKING CODE BREAKDOWN VOLTAGE VBR AT IT (V) (1) MIN. MAX. TEST CURRENT IT (mA) STAND-OFF VOLTAGE VWM (V) MAXIMUM REVERSE LEAKAGE AT VWM ID (μA) MAXIMUM PEAK PULSE CURRENT IPPM (A) (2) MAXIMUM CLAMPING VOLTAGE AT IPPM VC (V) SMB10J5.0A 1AE 6.40 7.07 10 5.0 1000 108.7 9.2 SMB10J6.0A 1AG 6.67 7.37 10 6.0 1000 97.1 10.3 SMB10J6.5A 1AK 7.22 7.98 10 6.5 500 89.3 11.2 SMB10J7.0A 1AM 7.78 8.60 10 7.0 200 83.3 12.0 SMB10J7.5A 1AP 8.33 9.21 1.0 7.5 100 77.5 12.9 SMB10J8.0A 1AR 8.89 9.83 1.0 8.0 50 73.5 13.6 SMB10J8.5A 1AT 9.44 10.4 1.0 8.5 20 69.4 14.4 SMB10J9.0A 1AV 10.0 11.1 1.0 9.0 10 64.9 15.4 SMB10J10A 1AX 11.1 12.3 1.0 10 5.0 58.8 17.0 SMB10J11A 1AZ 12.2 13.5 1.0 11 5.0 54.9 18.2 SMB10J12A 1BE 13.3 14.7 1.0 12 5.0 50.3 19.9 SMB10J13A 1BG 14.4 15.9 1.0 13 1.0 46.5 21.5 SMB10J14A 1BK 15.6 17.2 1.0 14 1.0 43.1 23.2 SMB10J15A 1BM 16.7 18.5 1.0 15 1.0 41.0 24.4 SMB10J16A 1BP 17.8 19.7 1.0 16 1.0 38.5 26.0 SMB10J17A 1BR 18.9 20.9 1.0 17 1.0 36.2 27.6 SMB10J18A 1BT 20.0 22.1 1.0 18 1.0 34.2 29.2 SMB10J20A 1BV 22.2 24.5 1.0 20 1.0 30.9 32.4 SMB10J22A 1BX 24.4 26.9 1.0 22 1.0 28.2 35.5 SMB10J24A 1BZ 26.7 29.5 1.0 24 1.0 25.7 38.9 SMB10J26A 1CE 28.9 31.9 1.0 26 1.0 23.8 42.1 SMB10J28A 1CG 31.1 34.4 1.0 28 1.0 22.0 45.4 SMB10J30A 1CK 33.3 36.8 1.0 30 1.0 20.7 48.4 SMB10J33A 1CM 36.7 40.6 1.0 33 1.0 18.8 53.3 SMB10J36A 1CP 40.0 44.2 1.0 36 1.0 17.2 58.1 SMB10J40A 1CR 44.4 49.1 1.0 40 1.0 15.5 64.5 Notes (1) Pulse test: t ≤ 50 ms p (2) Surge current waveform per fig. 3 and derate per fig. 2 (3) All terms and symbols are consistent with ANSI/IEEE C62.35 (4) V = 3.5 V at I = 50 A (uni-directional only) F F Revision: 20-Jul-2020 Document Number: 89424 2 For technical questions within your region: DiodesAmericas@vishay.com, DiodesAsia@vishay.com, DiodesEurope@vishay.com THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000 SMB10(8)J5.0(C)A thru SMB10(8)J40(C)A www.vishay.com Vishay General Semiconductor BIDIRECTIONAL ELECTRICAL CHARACTERISTICS (TA = 25 °C unless otherwise noted) DEVICE TYPE DEVICE MARKING CODE BREAKDOWN VOLTAGE VBR (V) (1) MIN. MAX. 6.40 7.25 TEST CURRENT IT (mA) STAND-OFF VOLTAGE VWM (V) MAXIMUM REVERSE LEAKAGE AT VWM ID (μA) (3) MAXIMUM PEAK PULSE CURRENT IPPM (A) (2) MAXIMUM CLAMPING VOLTAGE AT IPPM VC (V) 10 5.0 2000 87.0 9.2 10.3 SMB8J5.0CA 1AE SMB8J6.0CA 1AG 6.67 7.37 10 6.0 2000 77.7 SMB8J6.5CA 1AK 7.22 7.98 10 6.5 1000 71.4 11.2 SMB8J7.0CA 1AM 7.78 8.60 10 7.0 400 66.7 12.0 SMB8J7.5CA 1AP 8.33 9.21 1.0 7.5 200 62.0 12.9 SMB8J8.0CA 1AR 8.89 9.83 1.0 8.0 100 58.8 13.6 SMB8J8.5CA 1AT 9.44 10.4 1.0 8.5 40 55.6 14.4 SMB8J9.0CA 1AV 10.0 11.1 1.0 9.0 20 51.9 15.4 SMB8J10CA 1AX 11.1 12.3 1.0 10 10 47.1 17.0 SMB8J11CA 1AZ 12.2 13.5 1.0 11 5.0 44.0 18.2 SMB8J12CA 1BE 13.3 14.7 1.0 12 5.0 40.2 19.9 SMB8J13CA 1BG 14.4 15.9 1.0 13 1.0 37.2 21.5 SMB8J14CA 1BK 15.6 17.2 1.0 14 1.0 34.5 23.2 SMB8J15CA 1BM 16.7 18.5 1.0 15 1.0 32.8 24.4 SMB8J16CA 1BP 17.8 19.7 1.0 16 1.0 30.8 26.0 SMB8J17CA 1BR 18.9 20.9 1.0 17 1.0 29.0 27.6 SMB8J18CA 1BT 20.0 22.1 1.0 18 1.0 27.4 29.2 SMB8J20CA 1BV 22.2 24.5 1.0 20 1.0 24.7 32.4 SMB8J22CA 1BX 24.4 26.9 1.0 22 1.0 22.5 35.5 SMB8J24CA 1BZ 26.7 29.5 1.0 24 1.0 20.6 38.9 SMB8J26CA 1CE 28.9 31.9 1.0 26 1.0 19.0 42.1 SMB8J28CA 1CG 31.1 34.4 1.0 28 1.0 17.6 45.4 SMB8J30CA 1CK 33.3 36.8 1.0 30 1.0 16.5 48.4 SMB8J33CA 1CM 36.7 40.6 1.0 33 1.0 15.0 53.3 SMB8J36CA 1CP 40.0 44.2 1.0 36 1.0 13.8 58.1 SMB8J40CA 1CR 44.4 49.1 1.0 40 1.0 12.4 64.5 Notes (1) Pulse test: t ≤ 50 ms p (2) Surge current waveform per fig. 3 and derate per fig. 2 (3) All terms and symbols are consistent with ANSI/IEEE C62.35 THERMAL CHARACTERISTICS (TA = 25 °C unless otherwise noted) PARAMETER SYMBOL Typical thermal resistance, junction to ambient RθJA Typical thermal resistance, junction to lead (1) RθJL VALUE UNIT 72 °C/W 20 °C/W Note Mounted on minimum recommended pad layout (1) ORDERING INFORMATION (Example) PREFERRED P/N UNIT WEIGHT (g) PREFERRED PACKAGE CODE BASE QUANTITY DELIVERY MODE SMB10J5.0A-M3/52 0.106 52 750 7" diameter plastic tape and reel SMB10J5.0A-M3/5B 0.106 5B 3200 13" diameter plastic tape and reel Revision: 20-Jul-2020 Document Number: 89424 3 For technical questions within your region: DiodesAmericas@vishay.com, DiodesAsia@vishay.com, DiodesEurope@vishay.com THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000 SMB10(8)J5.0(C)A thru SMB10(8)J40(C)A www.vishay.com Vishay General Semiconductor RATINGS AND CHARACTERISTICS CURVES (TA = 25 °C unless otherwise noted) 10 000 10 SMB10J5.0 SMB10J40A 1 SMB8J5.0C SMB8J40CA 0.2 x 0.2" (5.0 x 5.0 mm) Copper Pad Areas 0.1 0.1 µs 1.0 µs 10 µs Measured at Zero Bias 1000 VR, Measured at Stand-Off Voltage VWM 100 TJ = 25 °C f = 1.0 MHz Vsig = 50 mVp-p Bi-Directional 100 µs 1.0 ms 10 10 ms 1 100 10 td - Pulse Width (s) VWM - Reverse Stand-Off Voltage (V) Fig. 1 - Peak Pulse Power Rating Curve Fig. 4 - Typical Junction Capacitance 200 100 100 Transient Thermal Impedance (°C/W) Peak Pulse Power (PPP) or Current (IPP) Derating in Percentage, % CJ - Junction Capacitance (pF) PPPM - Peak Pulse Power (kW) 100 75 50 25 10 1.0 0 0 25 50 75 100 125 150 175 0.01 200 0.1 1 10 100 1000 TJ - Initial Temperature (°C) tp - Pulse Duration (s) Fig. 2 - Pulse Power or Current vs. Initial Junction Temperature Fig. 5 - Typical Transient Thermal Impedance Peak Value IPPM 100 200 TJ = 25 °C Pulse Width (td) is defined as the Point where the Peak Current decays to 50 % of IPPM tr = 10 µs Peak Forward Surge Current (A) IPPM - Peak Pulse Current, % IRSM 150 Half Value - IPP IPPM 2 50 10/1000 µs Waveform as defined by R.E.A. 8.3 ms Single Half Sine-Wave Uni-Directional Only 100 td 10 0 0 1.0 2.0 3.0 4.0 1 10 100 t - Time (ms) Number of Cycles at 60 Hz Fig. 3 - Pulse Waveform Fig. 6 - Maximum Non-Repetitive Forward Surge Current Revision: 20-Jul-2020 Document Number: 89424 4 For technical questions within your region: DiodesAmericas@vishay.com, DiodesAsia@vishay.com, DiodesEurope@vishay.com THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000 SMB10(8)J5.0(C)A thru SMB10(8)J40(C)A www.vishay.com Vishay General Semiconductor PACKAGE OUTLINE DIMENSIONS in inches (millimeters) SMB (DO-214AA) Cathode Band Mounting Pad Layout 0.085 (2.159) MAX. 0.155 (3.94) 0.130 (3.30) 0.086 (2.20) 0.077 (1.95) 0.086 (2.18) MIN. 0.180 (4.57) 0.160 (4.06) 0.060 (1.52) MIN. 0.012 (0.305) 0.006 (0.152) 0.220 (5.59) REF. 0.096 (2.44) 0.084 (2.13) 0.060 (1.52) 0.030 (0.76) 0.008 (0.2) 0 (0) 0.220 (5.59) 0.205 (5.21) Revision: 20-Jul-2020 Document Number: 89424 5 For technical questions within your region: DiodesAmericas@vishay.com, DiodesAsia@vishay.com, DiodesEurope@vishay.com THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. 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