SMB10(8)J5.0(C)A thru SMB10(8)J40(C)A
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Vishay General Semiconductor
High Power Density Surface Mount TRANSZORB®
Transient Voltage Suppressors
FEATURES
• Low profile package
• Ideal for automated placement
• Glass passivated chip junction
• Available in uni-directional and bi-directional
• Excellent clamping capability
• Very fast response time
• Low incremental surge resistance
• Meets MSL level 1, per J-STD-020, LF maximum peak of
260 °C
• AEC-Q101 qualified
• Material categorization: For definitions of compliance
please see www.vishay.com/doc?99912
DO-214AA (SMB)
TYPICAL APPLICATIONS
Use in sensitive electronics protection against voltage
transients induced by inductive load switching and lighting
on ICs, MOSFET, signal lines of sensor units for consumer,
computer, industrial, automotive, and telecommunication.
PRIMARY CHARACTERISTICS
VBR (uni-directional)
6.4 V to 49.1 V
VBR (bi-directional)
6.4 V to 49.1 V
VWM
5.0 V to 40 V
PPPM (uni-directional)
1000 W
PPPM (bi-directional)
800 W
PD
100 W
IFSM (uni-directional only)
100 A
MECHANICAL DATA
Case: DO-214AA (SMBJ)
Molding compound meets UL 94 V-0 flammability rating
Base P/N-E3 - RoHS-compliant, commercial grade
Base P/NHE3 - RoHS-compliant, AEC-Q101 qualified
TJ max.
150 °C
Polarity
Uni-directional, bi-directional
Package
DO-214AA (SMBJ)
Terminals: Matte tin plated leads, solderable per
J-STD-002 and JESD 22-B102
E3 suffix meets JESD 201 class 1A whisker test, HE3 suffix
meets JESD 201 class 2 whisker test
Polarity: For uni-directional types the color band denotes
cathode end, no marking on bi-directional types
MAXIMUM RATINGS (TA = 25 °C unless otherwise noted)
PARAMETER
Peak pulse power dissipation
with a 10/1000 μs waveform (1)(2) (fig. 1)
SYMBOL
uni-directional
bi-directional
Peak pulse current with a 10/1000 μs waveform (1)
Peak forward surge current 8.3 ms single half sine-wave uni-directional only
PPPM
IPPM
(2)
Operating junction and storage temperature range
VALUE
1000
800
See next table
UNIT
W
A
PD
100
W
TJ, TSTG
- 55 to 150
°C
Notes
(1) Non-repetitive current pulse, per fig. 3 and derated above T = 25 °C per fig. 2
A
(2) Mounted on 0.2" x 0.2" (5.0 mm x 5.0 mm) copper pads to each terminal
Revision: 12-Nov-12
Document Number: 88422
1
For technical questions within your region: DiodesAmericas@vishay.com, DiodesAsia@vishay.com, DiodesEurope@vishay.com
THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT
ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000
SMB10(8)J5.0(C)A thru SMB10(8)J40(C)A
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Vishay General Semiconductor
UNI-DIRECTIONAL
ELECTRICAL CHARACTERISTICS (TA = 25 °C unless otherwise noted)
DEVICE
TYPE
DEVICE
MARKING
CODE
BREAKDOWN
VOLTAGE
VBR AT IT (1)
(V)
MIN.
MAX.
TEST
CURRENT
IT
(mA)
STAND-OFF
VOLTAGE
VWM
(V)
MAXIMUM
REVERSE
LEAKAGE
AT VWM
ID (μA)
MAXIMUM
PEAK
PULSE SURGE
CURRENT
IPPM (2)
(A)
MAXIMUM
CLAMPING
VOLTAGE
AT IPPM
VC (V)
SMB10J5.0A
1AE
6.40
7.07
10
5.0
1000
108.7
9.2
SMB10J6.0A
1AG
6.67
7.37
10
6.0
1000
97.1
10.3
SMB10J6.5A
1AK
7.22
7.98
10
6.5
500
89.3
11.2
SMB10J7.0A
1AM
7.78
8.60
10
7.0
200
83.3
12.0
SMB10J7.5A
1AP
8.33
9.21
1.0
7.5
100
77.5
12.9
SMB10J8.0A
1AR
8.89
9.83
1.0
8.0
50
73.5
13.6
SMB10J8.5A
1AT
9.44
10.4
1.0
8.5
20
69.4
14.4
SMB10J9.0A
1AV
10.0
11.1
1.0
9.0
10
64.9
15.4
SMB10J10A
1AX
11.1
12.3
1.0
10
5.0
58.8
17.0
SMB10J11A
1AZ
12.2
13.5
1.0
11
5.0
54.9
18.2
SMB10J12A
1BE
13.3
14.7
1.0
12
5.0
50.3
19.9
SMB10J13A
1BG
14.4
15.9
1.0
13
1.0
46.5
21.5
SMB10J14A
1BK
15.6
17.2
1.0
14
1.0
43.1
23.2
SMB10J15A
1BM
16.7
18.5
1.0
15
1.0
41.0
24.4
SMB10J16A
1BP
17.8
19.7
1.0
16
1.0
38.5
26.0
SMB10J17A
1BR
18.9
20.9
1.0
17
1.0
36.2
27.6
SMB10J18A
1BT
20.0
22.1
1.0
18
1.0
34.2
29.2
SMB10J20A
1BV
22.2
24.5
1.0
20
1.0
30.9
32.4
SMB10J22A
1BX
24.4
26.9
1.0
22
1.0
28.2
35.5
SMB10J24A
1BZ
26.7
29.5
1.0
24
1.0
25.7
38.9
SMB10J26A
1CE
28.9
31.9
1.0
26
1.0
23.8
42.1
SMB10J28A
1CG
31.1
34.4
1.0
28
1.0
22.0
45.4
SMB10J30A
1CK
33.3
36.8
1.0
30
1.0
20.7
48.4
SMB10J33A
1CM
36.7
40.6
1.0
33
1.0
18.8
53.3
SMB10J36A
1CP
40.0
44.2
1.0
36
1.0
17.2
58.1
40
1.0
15.5
64.5
SMB10J40A
1CR
44.4
49.1
1.0
Notes
(1) Pulse test: t 50 ms
p
(2) Surge current waveform per fig. 3 and derate per fig. 2
(3) All terms and symbols are consistent with ANSI/IEEE C62.35
(4) V = 3.5 V at I = 50 A (uni-directional only)
F
F
Revision: 12-Nov-12
Document Number: 88422
2
For technical questions within your region: DiodesAmericas@vishay.com, DiodesAsia@vishay.com, DiodesEurope@vishay.com
THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT
ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000
SMB10(8)J5.0(C)A thru SMB10(8)J40(C)A
www.vishay.com
Vishay General Semiconductor
BI-DIRECTIONAL
ELECTRICAL CHARACTERISTICS (TA = 25 °C unless otherwise noted)
DEVICE
TYPE
DEVICE
MARKING
CODE
BREAKDOWN
VOLTAGE
VBR AT IT (1)
(V)
MIN.
TEST
CURRENT
IT
(mA)
MAX.
SMB8J5.0CA
1AE
6.40
7.25
10
SMB8J6.0CA
1AG
6.67
7.37
10
SMB8J6.5CA
1AK
7.22
7.98
10
SMB8J7.0CA
1AM
7.78
8.60
10
SMB8J7.5CA
1AP
8.33
9.21
1.0
SMB8J8.0CA
1AR
8.89
9.83
1.0
SMB8J8.5CA
1AT
9.44
10.4
1.0
SMB8J9.0CA
1AV
10.0
11.1
1.0
SMB8J10CA
1AX
11.1
12.3
1.0
SMB8J11CA
1AZ
12.2
13.5
1.0
SMB8J12CA
1BE
13.3
14.7
1.0
SMB8J13CA
1BG
14.4
15.9
1.0
SMB8J14CA
1BK
15.6
17.2
1.0
SMB8J15CA
1BM
16.7
18.5
1.0
SMB8J16CA
1BP
17.8
19.7
1.0
SMB8J17CA
1BR
18.9
20.9
1.0
SMB8J18CA
1BT
20.0
22.1
1.0
SMB8J20CA
1BV
22.2
24.5
1.0
SMB8J22CA
1BX
24.4
26.9
1.0
SMB8J24CA
1BZ
26.7
29.5
1.0
SMB8J26CA
1CE
28.9
31.9
1.0
SMB8J28CA
1CG
31.1
34.4
1.0
SMB8J30CA
1CK
33.3
36.8
1.0
SMB8J33CA
1CM
36.7
40.6
1.0
SMB8J36CA
1CP
40.0
44.2
1.0
SMB8J40CA
1CR
44.4
49.1
1.0
Notes
(1) Pulse test: t 50 ms
p
(2) Surge current waveform per fig. 3 and derate per fig. 2
(3) All terms and symbols are consistent with ANSI/IEEE C62.35
STAND-OFF
VOLTAGE
VWM
(V)
MAXIMUM
REVERSE
LEAKAGE
AT VWM (3)
ID (μA)
MAXIMUM
PEAK
PULSE SURGE
CURRENT
IPPM (2)
(A)
MAXIMUM
CLAMPING
VOLTAGE
AT IPPM
VC (V)
5.0
6.0
6.5
7.0
7.5
8.0
8.5
9.0
10
11
12
13
14
15
16
17
18
20
22
24
26
28
30
33
36
40
2000
2000
1000
400
200
100
40
20
10
5.0
5.0
1.0
1.0
1.0
1.0
1.0
1.0
1.0
1.0
1.0
1.0
1.0
1.0
1.0
1.0
1.0
87.0
77.7
71.4
66.7
62.0
58.8
55.6
51.9
47.1
44.0
40.2
37.2
34.5
32.8
30.8
29.0
27.4
24.7
22.5
20.6
19.0
17.6
16.5
15.0
13.8
12.4
9.2
10.3
11.2
12.0
12.9
13.6
14.4
15.4
17.0
18.2
19.9
21.5
23.2
24.4
26.0
27.6
29.2
32.4
35.5
38.9
42.1
45.4
48.4
53.3
58.1
64.5
THERMAL CHARACTERISTICS (TA = 25 °C unless otherwise noted)
PARAMETER
Typical thermal resistance, junction to ambient
(1)
Typical thermal resistance, junction to lead
SYMBOL
VALUE
RJA
72
RJL
20
UNIT
°C/ W
Note
Mounted on minimum recommended pad layout
(1)
ORDERING INFORMATION (Example)
PREFERRED P/N
SMB10J5.0A-E3/52
SMB10J5.0A-E3/5B
SMB10J5.0AHE3/52 (1)
SMB10J5.0AHE3/5B (1)
UNIT WEIGHT (g)
PREFERRED PACKAGE CODE
BASE QUANTITY
DELIVERY MODE
0.106
0.106
0.106
0.106
52
5B
52
5B
750
3200
750
3200
7" diameter plastic tape and reel
13" diameter plastic tape and reel
7" diameter plastic tape and reel
13" diameter plastic tape and reel
Note
AEC-Q101 qualified
(1)
Revision: 12-Nov-12
Document Number: 88422
3
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THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT
ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000
SMB10(8)J5.0(C)A thru SMB10(8)J40(C)A
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Vishay General Semiconductor
RATINGS AND CHARACTERISTICS CURVES (TA = 25 °C unless otherwise noted)
10 000
CJ - Junction Capacitance (pF)
PPPM - Peak Pulse Power (kW)
100
10
SMB10J5.0 SMB10J40A
1
SMB8J5.0C SMB8J40CA
0.2 x 0.2" (5.0 x 5.0 mm)
Copper Pad Areas
Measured at
Zero Bias
1000
VR, Measured at
Stand-Off
Voltage VWM
100
Bi-Directional
0.1
0.1 µs
1.0 µs
10 µs
100 µs
1.0 ms
10
10 ms
1
td - Pulse Width (s)
200
Fig. 4 - Typical Junction Capacitance
100
100
Transient Thermal Impedance (°C/W)
Peak Pulse Power (PPP) or Current (IPP)
Derating in Percentage, %
100
10
VWM - Reverse Stand-Off Voltage (V)
Fig. 1 - Peak Pulse Power Rating Curve
75
50
25
0
0
25
50
75
100
125
150
175
10
1.0
200
0.01
TJ - Initial Temperature (°C)
0.1
1
10
100
1000
tp - Pulse Duration (s)
Fig. 5 - Typical Transient Thermal Impedance
Fig. 2 - Pulse Power or Current vs. Initial Junction Temperature
200
150
TJ = 25 °C
Pulse Width (td)
is defined as the Point
where the Peak Current
decays to 50 % of IPPM
tr = 10 µs
Peak Value
IPPM
100
Peak Forward Surge Current (A)
IPPM - Peak Pulse Current, % IRSM
TJ = 25 °C
f = 1.0 MHz
Vsig = 50 mVp-p
Half Value - IPP
IPPM
2
50
10/1000 µs Waveform
as defined by R.E.A.
8.3 ms Single Half Sine-Wave
Uni-Directional Only
100
td
10
0
0
1.0
2.0
3.0
t - Time (ms)
Fig. 3 - Pulse Waveform
Revision: 12-Nov-12
4.0
1
10
100
Number of Cycles at 60 Hz
Fig. 6 - Maximum Non-Repetitive Forward Surge Current
Document Number: 88422
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THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT
ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000
SMB10(8)J5.0(C)A thru SMB10(8)J40(C)A
www.vishay.com
Vishay General Semiconductor
PACKAGE OUTLINE DIMENSIONS in inches (millimeters)
DO-214AA (SMB)
Mounting Pad Layout
Cathode Band
0.085 (2.159)
MAX.
0.155 (3.94)
0.130 (3.30)
0.086 (2.20)
0.077 (1.95)
0.086 (2.18)
MIN.
0.180 (4.57)
0.160 (4.06)
0.012 (0.305)
0.006 (0.152)
0.060 (1.52)
MIN.
0.220 REF.
0.096 (2.44)
0.084 (2.13)
0.060 (1.52)
0.030 (0.76)
0.008 (0.2)
0 (0)
0.220 (5.59)
0.205 (5.21)
Revision: 12-Nov-12
Document Number: 88422
5
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ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000
Legal Disclaimer Notice
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Vishay
Disclaimer
ALL PRODUCT, PRODUCT SPECIFICATIONS AND DATA ARE SUBJECT TO CHANGE WITHOUT NOTICE TO IMPROVE
RELIABILITY, FUNCTION OR DESIGN OR OTHERWISE.
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“Vishay”), disclaim any and all liability for any errors, inaccuracies or incompleteness contained in any datasheet or in any other
disclosure relating to any product.
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the continuing production of any product. To the maximum extent permitted by applicable law, Vishay disclaims (i) any and all
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Statements regarding the suitability of products for certain types of applications are based on Vishay’s knowledge of typical
requirements that are often placed on Vishay products in generic applications. Such statements are not binding statements
about the suitability of products for a particular application. It is the customer’s responsibility to validate that a particular
product with the properties described in the product specification is suitable for use in a particular application. Parameters
provided in datasheets and/or specifications may vary in different applications and performance may vary over time. All
operating parameters, including typical parameters, must be validated for each customer application by the customer’s
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including but not limited to the warranty expressed therein.
Except as expressly indicated in writing, Vishay products are not designed for use in medical, life-saving, or life-sustaining
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Material Category Policy
Vishay Intertechnology, Inc. hereby certifies that all its products that are identified as RoHS-Compliant fulfill the
definitions and restrictions defined under Directive 2011/65/EU of The European Parliament and of the Council
of June 8, 2011 on the restriction of the use of certain hazardous substances in electrical and electronic equipment
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Please note that some Vishay documentation may still make reference to RoHS Directive 2002/95/EC. We confirm that
all the products identified as being compliant to Directive 2002/95/EC conform to Directive 2011/65/EU.
Vishay Intertechnology, Inc. hereby certifies that all its products that are identified as Halogen-Free follow Halogen-Free
requirements as per JEDEC JS709A standards. Please note that some Vishay documentation may still make reference
to the IEC 61249-2-21 definition. We confirm that all the products identified as being compliant to IEC 61249-2-21
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Revision: 02-Oct-12
1
Document Number: 91000
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