SMBJ16AHE3_A/H

SMBJ5.0A thru SMBJ188A www.vishay.com Vishay General Semiconductor Surface-Mount TRANSZORB® Transient Voltage Suppressors FEATURES • Low profile package • Ideal for automated placement • Glass passivated chip junction • Available in uni-directional and bi-directional Available • 600 W peak pulse power capability with a 10/1000 μs waveform, repetitive rate (duty cycle): 0.01 % SMB (DO-214AA) • Excellent clamping capability • Very fast response time LINKS TO ADDITIONAL RESOURCES • Low incremental surge resistance 3D 3D Design Tools Related Documents A 3D Models Models Application Notes • AEC-Q101 qualified available - Automotive ordering code: base P/NHE3 or P/NHM3 T Technical Notes • Meets MSL level 1, per J-STD-020, LF maximum peak of 260 °C Marking • Material categorization: for definitions of compliance please see www.vishay.com/doc?99912 PRIMARY CHARACTERISTICS VBR (bi-directional) 6.4 V to 231 V VBR (uni-directional) 6.4 V to 231 V VWM 5.0 V to 188 V PPPM 600 W IFSM (uni-directional only) 100 A TJ max. 150 °C Polarity Uni-directional, bi-directional Package SMB (DO-214AA) DEVICES FOR BI-DIRECTION APPLICATIONS For bi-directional devices use CA suffix (e.g. SMBJ10CA). Electrical characteristics apply in both directions. TYPICAL APPLICATIONS MECHANICAL DATA Case: SMB (DO-214AA) Molding compound meets UL 94 V-0 flammability rating Base P/N-E3 - RoHS-compliant, commercial grade Base P/N-M3 - halogen-free, RoHS-compliant, commercial grade Base P/NHE3_X - RoHS-compliant and AEC-Q101 qualified Base P/NHM3_X - halogen-free, RoHS-compliant, and AEC-Q101 qualified (“_X” denotes revision code e.g. A, B, ...) Terminals: matte tin plated leads, solderable per J-STD-002 and JESD 22-B102 E3, M3, HE3, and HM3 suffix meets JESD 201 class 2 whisker test Polarity: for uni-directional types the band denotes cathode end, no marking on bi-directional types Use in sensitive electronics protection against voltage transients induced by inductive load switching and lighting on ICs, MOSFET, signal lines of sensor units for consumer, computer, industrial, and telecommunication. MAXIMUM RATINGS (TA = 25 °C unless otherwise noted) PARAMETER Peak pulse power dissipation with a 10/1000 μs waveform (1)(2) (fig. 1) Peak pulse current with a 10/1000 μs waveform (1) Peak forward surge current 8.3 ms single half sine-wave uni-directional only (2) Operating junction and storage temperature range SYMBOL VALUE UNIT PPPM 600 W IPPM See next table A IFSM 100 A TJ, TSTG -55 to +150 °C Notes (1) Non-repetitive current pulse, per fig. 3 and derated above T = 25 °C per fig. 2 A (2) Mounted on 0.2" x 0.2" (5.0 mm x 5.0 mm) copper pads to each terminal Revision: 20-Jul-2020 Document Number: 88392 1 For technical questions within your region: DiodesAmericas@vishay.com, DiodesAsia@vishay.com, DiodesEurope@vishay.com THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000 SMBJ5.0A thru SMBJ188A www.vishay.com Vishay General Semiconductor ELECTRICAL CHARACTERISTICS (TA = 25 °C unless otherwise noted) DEVICE MARKING DEVICE TYPE CODE MODIFIED “J” BEND LEAD UNI BI (+)SMBJ5.0A (5) KE KE (+)SMBJ6.0A KG KG (+)SMBJ6.5A KK AK (+)SMBJ7.0A KM KM (+)SMBJ7.5A KP AP (+)SMBJ8.0A KR AR (+)SMBJ8.5A KT AT (+)SMBJ9.0A KV AV (+)SMBJ10A KX AX (+)SMBJ11A KZ KZ (+)SMBJ12A LE BE (+)SMBJ13A LG LG (+)SMBJ14A LK BK (+)SMBJ15A LM BM (+)SMBJ16A LP LM (+)SMBJ17A LR LR (+)SMBJ18A LT BT (+)SMBJ20A LV LV (+)SMBJ22A LX BX (+)SMBJ24A LZ BZ (+)SMBJ26A ME CE (+)SMBJ28A MG MG (+)SMBJ30A MK CK (+)SMBJ33A MM CM (+)SMBJ36A MP CP (+)SMBJ40A MR CR (+)SMBJ43A MT CT (+)SMBJ45A MV MV (+)SMBJ48A MX MX (+)SMBJ51A MZ MZ (+)SMBJ54A NE NE (+)SMBJ58A NG NG (+)SMBJ60A NK NK (+)SMBJ64A NM NM (+)SMBJ70A NP NP (+)SMBJ75A NR NR (+)SMBJ78A NT NT (+)SMBJ85A NV NV (+)SMBJ90A NX NX (+)SMBJ100A NZ NZ (+)SMBJ110A PE PE (+)SMBJ120A PG PG (+)SMBJ130A PK PK (+)SMBJ150A PM PM (+)SMBJ160A PP PP (+)SMBJ170A PR PR SMBJ188A PS PS BREAKDOWN VOLTAGE VBR AT IT (1) (V) MIN. MAX. 6.40 7.07 6.67 7.37 7.22 7.98 7.78 8.60 8.33 9.21 8.89 9.83 9.44 10.4 10.0 11.1 11.1 12.3 12.2 13.5 13.3 14.7 14.4 15.9 15.6 17.2 16.7 18.5 17.8 19.7 18.9 20.9 20.0 22.1 22.2 24.5 24.4 26.9 26.7 29.5 28.9 31.9 31.1 34.4 33.3 36.8 36.7 40.6 40.0 44.2 44.4 49.1 47.8 52.8 50.0 55.3 53.3 58.9 56.7 62.7 60.0 66.3 64.4 71.2 66.7 73.7 71.1 78.6 77.8 86.0 83.3 92.1 86.7 95.8 94.4 104 100 111 111 123 122 135 133 147 144 159 167 185 178 197 189 209 209 231 TEST CURRENT IT (mA) STAND-OFF VOLTAGE VWM (V) 10 10 10 10 1.0 1.0 1.0 1.0 1.0 1.0 1.0 1.0 1.0 1.0 1.0 1.0 1.0 1.0 1.0 1.0 1.0 1.0 1.0 1.0 1.0 1.0 1.0 1.0 1.0 1.0 1.0 1.0 1.0 1.0 1.0 1.0 1.0 1.0 1.0 1.0 1.0 1.0 1.0 1.0 1.0 1.0 1.0 5.0 6.0 6.5 7.0 7.5 8.0 8.5 9.0 10 11 12 13 14 15 16 17 18 20 22 24 26 28 30 33 36 40 43 45 48 51 54 58 60 64 70 75 78 85 90 100 110 120 130 150 160 170 188 MAXIMUM REVERSE LEAKAGE AT VWM ID (μA) (3) 800 800 500 200 100 50 20 10 5.0 5.0 5.0 1.0 1.0 1.0 1.0 1.0 1.0 1.0 1.0 1.0 1.0 1.0 1.0 1.0 1.0 1.0 1.0 1.0 1.0 1.0 1.0 1.0 1.0 1.0 1.0 1.0 1.0 1.0 1.0 1.0 1.0 1.0 1.0 1.0 1.0 1.0 1.0 MAXIMUM PEAK PULSE SURGE CURRENT IPPM (A) (2) 65.2 58.3 53.6 50.0 46.5 44.1 41.7 39.0 35.3 33.0 30.2 27.9 25.9 24.6 23.1 21.7 20.5 18.5 16.9 15.4 14.3 13.2 12.4 11.3 10.3 9.3 8.6 8.3 7.8 7.3 6.9 6.4 6.2 5.8 5.3 5.0 4.8 4.4 4.1 3.7 3.4 3.1 2.9 2.5 2.3 2.2 2.0 MAXIMUM CLAMPING VOLTAGE AT IPPM VC (V) 9.2 10.3 11.2 12.0 12.9 13.6 14.4 15.4 17.0 18.2 19.9 21.5 23.2 24.4 26.0 27.6 29.2 32.4 35.5 38.9 42.1 45.4 48.4 53.3 58.1 64.5 69.4 72.7 77.4 82.4 87.1 93.6 96.8 103 113 121 126 137 146 162 177 193 209 243 259 275 328 Notes (1) Pulse test: t ≤ 50 ms p (2) Surge current waveform per fig. 3 and derate per fig. 2 (3) For bi-directional types having V WM of 10 V and less, the ID limit is doubled (4) All terms and symbols are consistent with ANSI/IEEE C62.35 (5) For the bi-directional SMBJ5.0CA, the maximum V BR is 7.25 V (6) V = 3.5 V max. at I = 50 A (uni-directional only) F F (+) Underwriters laboratory recognition for the classification of protectors (QVGQ2) under the UL standard for safety 497B and file number E136766 for both uni-directional and bi-directional devices Revision: 20-Jul-2020 Document Number: 88392 2 For technical questions within your region: DiodesAmericas@vishay.com, DiodesAsia@vishay.com, DiodesEurope@vishay.com THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000 SMBJ5.0A thru SMBJ188A www.vishay.com Vishay General Semiconductor THERMAL CHARACTERISTICS (TA = 25 °C unless otherwise noted) PARAMETER Typical thermal resistance, junction to ambient (1) Typical thermal resistance, junction to lead SYMBOL RθJA RθJL VALUE 100 20 UNIT °C/ W Note (1) Mounted on minimum recommended pad layout ORDERING INFORMATION (Example) PREFERRED P/N SMBJ5.0A-E3/52 SMBJ5.0A-M3/52 SMBJ5.0A-E3/5B SMBJ5.0A-M3/5B SMBJ5.0AHE3_A/H (1) SMBJ5.0AHM3_A/H (1) SMBJ5.0AHE3_A/I (1) SMBJ5.0AHM3_A/I(1) UNIT WEIGHT (g) PREFERRED PACKAGE CODE BASE QUANTITY DELIVERY MODE 0.096 52 750 7" diameter plastic tape and reel 0.096 5B 3200 13" diameter plastic tape and reel 0.096 H 750 7" diameter plastic tape and reel 0.096 I 3200 13" diameter plastic tape and reel Note (1) AEC-Q101 qualified RATINGS AND CHARACTERISTICS CURVES (TA = 25 °C unless otherwise noted) 150 10 1 0.2 x 0.2" (5.0 x 5.0 mm) Copper Pad Areas 0.1 0.1 µs TJ = 25 °C Pulse Width (td) is defined as the Point where the Peak Current decays to 50 % of IPPM tr = 10 µs Peak Value IPPM 100 Half Value - IPP IPPM 2 50 10/1000 µs Waveform as defined by R.E.A. td 0 1.0 µs 10 µs 100 µs 1.0 ms 10 ms 0 1.0 2.0 3.0 td - Pulse Width (s) t - Time (ms) Fig. 1 - Peak Pulse Power Rating Curve Fig. 3 - Pulse Waveform 100 4.0 6000 CJ - Junction Capacitance (pF) Peak Pulse Power (PPP) or Current (IPP) Derating in Percentage, % IPPM - Peak Pulse Current, % IRSM PPPM - Peak Pulse Power (kW) 100 75 50 25 0 Measured at Zero Bias 1000 VR, Measured at Stand-Off Voltage VWM 100 Uni-Directional Bi-Directional TJ = 25 °C f = 1.0 MHz Vsig = 50 mVP-P 10 0 25 50 75 100 125 150 175 200 1 10 100 TJ - Initial Temperature (°C) VWM - Reverse Stand-Off Voltage (V) Fig. 2 - Pulse Power or Current vs. Initial Junction Temperature Fig. 4 - Typical Junction Capacitance 200 Revision: 20-Jul-2020 Document Number: 88392 3 For technical questions within your region: DiodesAmericas@vishay.com, DiodesAsia@vishay.com, DiodesEurope@vishay.com THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000 SMBJ5.0A thru SMBJ188A www.vishay.com Vishay General Semiconductor 200 Peak Forward Surge Current (A) Transient Thermal Impedance (°C/W) 100 10 1.0 0.1 0.001 8.3 ms Single Half Sine-Wave Uni-Directional Only 100 10 0.01 0.1 1.0 10 100 1000 1 10 100 tp - Pulse Duration (s) Number of Cycles at 60 Hz Fig. 5 - Typical Transient Thermal Impedance Fig. 6 - Maximum Non-Repetitive Peak Forward Surge Current PACKAGE OUTLINE DIMENSIONS in inches (millimeters) SMB (DO-214AA) Cathode Band Mounting Pad Layout 0.085 (2.159) MAX. 0.155 (3.94) 0.130 (3.30) 0.086 (2.20) 0.077 (1.95) 0.086 (2.18) MIN. 0.180 (4.57) 0.160 (4.06) 0.012 (0.305) 0.006 (0.152) 0.096 (2.44) 0.084 (2.13) 0.060 (1.52) MIN. 0.060 (1.52) 0.030 (0.76) 0.008 (0.203) Max. 0.220 (5.59) REF. 0.220 (5.59) 0.205 (5.21) Revision: 20-Jul-2020 Document Number: 88392 4 For technical questions within your region: DiodesAmericas@vishay.com, DiodesAsia@vishay.com, DiodesEurope@vishay.com THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. 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