SMCJ75C-E3/9AT

SMCJ5.0A thru SMCJ188CA www.vishay.com Vishay General Semiconductor Surface Mount TRANSZORB® Transient Voltage Suppressors FEATURES • • • • • • • • Low profile package Ideal for automated placement Glass passivated chip junction Available in uni-directional and bi-directional Excellent clamping capability Very fast response time Low incremental surge resistance Meets MSL level 1, per J-STD-020, LF maximum peak of 260 °C • AEC-Q101 qualified • Material categorization: For definitions of compliance please see www.vishay.com/doc?99912 DO-214AB (SMC) PRIMARY CHARACTERISTICS VBR uni-directional 6.40 V to 231 V VBR bi-directional 6.40 V to 231 V TYPICAL APPLICATIONS Use in sensitive electronics protection against voltage transients induced by inductive load switching and lighting on ICs, MOSFET, signal lines of sensor units for consumer, computer, industrial, automotive, and telecommunication. VWM 5.0 V to 188 V PPPM 1500 W PD 6.5 W MECHANICAL DATA IFSM (uni-directional only) 200 A TJ max. 150 °C Polarity Uni-directional, bi-directional Package DO-214AB (SMCJ) Case: DO-214AB (SMCJ) Molding compound meets UL 94 V-0 flammability rating Base P/N-E3 - RoHS compliant, commercial grade Base P/NHE3 - RoHS compliant, AEC-Q101 qualified DEVICES FOR BI-DIRECTION APPLICATIONS For bi-directional devices use CA suffix (e.g. SMCJ188CA). Electrical characteristics apply in both directions. Terminals: Matte tin plated leads, solderable per J-STD-002 and JESD 22-B102 E3 suffix meets JESD 201 class 1A whisker test, HE3 suffix meets JESD 201 class 2 whisker test Polarity: For uni-directional types the band denotes cathode end, no marking on bi-directional types MAXIMUM RATINGS (TA = 25 °C unless otherwise noted) PARAMETER SYMBOL VALUE UNIT Peak pulse power dissipation with a 10/1000 μs waveform (1)(2) PPPM 1500 W Peak pulse current with a 10/1000 μs waveform (1) IPPM See next table A IFSM 200 A PD 6.5 W TJ, TSTG - 55 to + 150 °C Peak forward surge current 8.3 ms single half sine-wave uni-directional only (2) Power dissipation on infinite heatsink, TA = 50 °C Operating junction and storage temperature range Notes (1) Non-repetitive current pulse, per fig. 3 and derated above T = 25 °C per fig. 2. A (2) Mounted on 0.31" x 0.31" (8.0 mm x 8.0 mm) copper pads to each terminal Revision: 11-Dec-12 Document Number: 88394 1 For technical questions within your region: DiodesAmericas@vishay.com, DiodesAsia@vishay.com, DiodesEurope@vishay.com THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000 SMCJ5.0A thru SMCJ188CA www.vishay.com Vishay General Semiconductor ELECTRICAL CHARACTERISTICS (TA = 25 °C unless otherwise noted) DEVICE MARKING DEVICE TYPE CODE MODIFIED “J” BEND LEAD UNI BI (+)SMCJ5.0A (5) GDE GDE (+)SMCJ6.0A GDG GDG (+)SMCJ6.5A GDK BDK (+)SMCJ7.0A GDM GDM (+)SMCJ7.5A GDP BDP (+)SMCJ8.0A GDR BDR (+)SMCJ8.5A GDT BDT (+)SMCJ9.0A GDV BDV (+)SMCJ10A GDX BDX (+)SMCJ11A GDZ GDZ (+)SMCJ12A GEE BEE (+)SMCJ13A GEG GEG (+)SMCJ14A GEK BEK (+)SMCJ15A GEM BEM (+)SMCJ16A GEP GEP (+)SMCJ17A GER GER (+)SMCJ18A GET BET (+)SMCJ20A GEV BEV (+)SMCJ22A GEX BEX (+)SMCJ24A GEZ BEZ (+)SMCJ26A GFE BFE (+)SMCJ28A GFG BFG (+)SMCJ30A GFK BFK (+)SMCJ33A GFM BFM (+)SMCJ36A GFP BFP (+)SMCJ40A GFR BFR (+)SMCJ43A GFT BFT (+)SMCJ45A GFV GFV (+)SMCJ48A GFX GFX (+)SMCJ51A GFZ GFZ (+)SMCJ54A GGE GGE (+)SMCJ58A GGG GGG (+)SMCJ60A GGK GGK (+)SMCJ64A GGM GGM (+)SMCJ70A GGP GGP (+)SMCJ75A GGR GGR (+)SMCJ78A GGT GGT (+)SMCJ85A GGV GGV (+)SMCJ90A GGX GGX (+)SMCJ100A GGZ GGZ (+)SMCJ110A GHE GHE (+)SMCJ120A GHG GHG (+)SMCJ130A GHK GHK (+)SMCJ150A GHM GHM (+)SMCJ160A GHP GHP (+)SMCJ170A GHR GHR SMCJ188A GHS GHS BREAKDOWN VOLTAGE VBR AT IT (1) (V) MIN. MAX. 6.40 7.07 6.67 7.37 7.22 7.98 7.78 8.60 8.33 9.21 8.89 9.83 9.44 10.4 10.0 11.1 11.1 12.3 12.2 13.5 13.3 14.7 14.4 15.9 15.6 17.2 16.7 18.5 17.8 19.7 18.9 20.9 20.0 22.1 22.2 24.5 24.4 26.9 26.7 29.5 28.9 31.9 31.1 34.4 33.3 36.8 36.7 40.6 40.0 44.2 44.4 49.1 47.8 52.8 50.0 55.3 53.3 58.9 56.7 62.7 60.0 66.3 64.4 71.2 66.7 73.7 71.1 78.6 77.8 86.0 83.3 92.1 86.7 95.8 94.4 104 100 111 111 123 122 135 133 147 144 159 167 185 178 197 189 209 209 231 TEST CURRENT IT (mA) STAND-OFF VOLTAGE VWM (V) 10 10 10 10 1.0 1.0 1.0 1.0 1.0 1.0 1.0 1.0 1.0 1.0 1.0 1.0 1.0 1.0 1.0 1.0 1.0 1.0 1.0 1.0 1.0 1.0 1.0 1.0 1.0 1.0 1.0 1.0 1.0 1.0 1.0 1.0 1.0 1.0 1.0 1.0 1.0 1.0 1.0 1.0 1.0 1.0 1.0 5.0 6.0 6.5 7.0 7.5 8.0 8.5 9.0 10 11 12 13 14 15 16 17 18 20 22 24 26 28 30 33 36 40 43 45 48 51 54 58 60 64 70 75 78 85 90 100 110 120 130 150 160 170 188 MAXIMUM REVERSE LEAKAGE AT VWM ID (μA) (3) 1000 1000 500 200 100 50 20 10 5.0 5.0 5.0 1.0 1.0 1.0 1.0 1.0 1.0 1.0 1.0 1.0 1.0 1.0 1.0 1.0 1.0 1.0 1.0 1.0 1.0 1.0 1.0 1.0 1.0 1.0 1.0 1.0 1.0 1.0 1.0 1.0 1.0 1.0 1.0 1.0 1.0 1.0 1.0 MAXIMUM PEAK PULSE SURGE CURRENT IPPM (A) (2) 163.0 145.6 133.9 125.0 116.3 110.3 104.2 97.4 88.2 82.4 75.4 69.8 64.7 61.5 57.7 54.3 51.4 46.3 42.3 38.6 35.6 33.0 31.0 28.1 25.8 23.3 21.6 20.6 19.4 18.2 17.2 16.0 15.5 14.6 13.3 12.4 11.9 10.9 10.3 9.3 8.5 7.8 7.2 6.2 5.8 5.5 4.6 MAXIMUM CLAMPING VOLTAGE AT IPPM VC (V) 9.2 10.3 11.2 12.0 12.9 13.6 14.4 15.4 17.0 18.2 19.9 21.5 23.2 24.4 26.0 27.6 29.2 32.4 35.5 38.9 42.1 45.4 48.4 53.3 58.1 64.5 69.4 72.7 77.4 82.4 87.1 93.6 96.8 103 113 121 126 137 146 162 177 193 209 243 259 275 328 Notes (1) Pulse test: t  50 ms p (2) Surge current waveform per fig. 3 and derate per fig. 2 (3) For bi-directional types having V WM of 10 V and less, the ID limit is doubled (4) All terms and symbols are consistent with ANSI/IEEE C62.35 (5) For the bi-directional SMCJ5.0CA, the maximum V BR is 7.25 V (6) V = 3.5 V at I = 100 A (uni-directional only) F F (+) Underwriters laboratory recognition for the classification of protectors (QVGQ2) under the UL standard for safety 497B and file number E136766 for both uni-directional and bi-directional devices Revision: 11-Dec-12 Document Number: 88394 2 For technical questions within your region: DiodesAmericas@vishay.com, DiodesAsia@vishay.com, DiodesEurope@vishay.com THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000 SMCJ5.0A thru SMCJ188CA www.vishay.com Vishay General Semiconductor THERMAL CHARACTERISTICS (TA = 25 °C unless otherwise noted) PARAMETER Typical thermal resistance, junction to ambient air (1) Typical thermal resistance, junction to lead SYMBOL VALUE UNIT RJA RJL 75 15 °C/ W Note (1) Mounted on minimum recommended pad layout ORDERING INFORMATION (Example) PREFERRED P/N UNIT WEIGHT (g) PREFERRED PACKAGE CODE BASE QUANTITY DELIVERY MODE 0.211 0.211 0.211 0.211 57T 9AT 57T 9AT 850 3500 850 3500 7" diameter plastic tape and reel 13" diameter plastic tape and reel 7" diameter plastic tape and reel 13" diameter plastic tape and reel SMCJ5.0A-E3/57T SMCJ5.0A-E3/9AT SMCJ5.0AHE3/57T (1) SMCJ5.0AHE3/9AT (1) Note AEC-Q101 qualified (1) RATINGS AND CHARACTERISTICS CURVES (TA = 25 °C unless otherwise noted) 150 10 1 0.31 x 0.31" (8.0 x 8.0 mm) Copper Pad Areas 0.1 0.1 µs TJ = 25 °C Pulse Width (td) is defined as the Point where the Peak Current decays to 50 % of IPPM tr = 10 µs Peak Value IPPM 100 Half Value - IPP IPPM 2 50 10/1000 µs Waveform as defined by R.E.A. td 0 1.0 µs 10 µs 100 µs 1.0 ms 10 ms 0 1.0 2.0 3.0 td - Pulse Width (s) t - Time (ms) Fig. 1 - Peak Pulse Power Rating Curve Fig. 3 - Pulse Waveform 4.0 20 000 100 Measured at Zero Bias 10 000 CJ - Junction Capacitance (pF) Peak Pulse Power (PPP) or Current (IPP) Derating in Percentage, % IPPM - Peak Pulse Current, % IRSM PPPM - Peak Pulse Power (kW) 100 75 50 25 0 1000 VR, Measured at Stand-Off Voltage VWM 100 Uni-Directional Bi-Directional TJ = 25 °C f = 1.0 MHz Vsig = 50 mVp-p 10 0 25 50 75 100 125 150 175 200 1 10 100 400 TJ - Initial Temperature (°C) VWM - Reverse Stand-Off Voltage (V) Fig. 2 - Pulse Power or Current vs. Initial Junction Temperature Fig. 4 - Typical Junction Capacitance Uni-Directional Revision: 11-Dec-12 Document Number: 88394 3 For technical questions within your region: DiodesAmericas@vishay.com, DiodesAsia@vishay.com, DiodesEurope@vishay.com THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000 SMCJ5.0A thru SMCJ188CA www.vishay.com Vishay General Semiconductor 200 Peak Forward Surge Current (A) Transient Thermal Impedance (°C/W) 100 10 1.0 0.1 0.001 100 TJ = TJ max. 8.3 ms Single Half Sine-Wave 10 0.01 0.1 1 10 100 1000 1 100 10 tp - Pulse Duration (s) Number of Cycles at 60 Hz Fig. 5 - Typical Transient Thermal Impedance Fig. 6 - Maximum Non-Repetitive Peak Forward Surge Current Uni-Directional Use Only PACKAGE OUTLINE DIMENSIONS in inches (millimeters) DO-214AB (SMC J-Bend) Mounting Pad Layout Cathode Band 0.185 (4.69) MAX. 0.126 (3.20) 0.246 (6.22) 0.220 (5.59) 0.114 (2.90) 0.126 (3.20) MIN. 0.280 (7.11) 0.060 (1.52) MIN. 0.260 (6.60) 0.012 (0.305) 0.006 (0.152) 0.320 REF. 0.103 (2.62) 0.079 (2.06) 0.060 (1.52) 0.030 (0.76) 0.008 (0.2) 0 (0) 0.320 (8.13) 0.305 (7.75) Revision: 11-Dec-12 Document Number: 88394 4 For technical questions within your region: DiodesAmericas@vishay.com, DiodesAsia@vishay.com, DiodesEurope@vishay.com THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. 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