SQ2361ES
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Vishay Siliconix
Automotive P-Channel 60 V (D-S) 175 °C MOSFET
FEATURES
SOT-23 (TO-236)
• TrenchFET® power MOSFET
• AEC-Q101 qualified
D
3
• 100 % Rg and UIS tested
• Material categorization:
for definitions of compliance please see
www.vishay.com/doc?99912
2
S
S
1
G
Top View
Marking Code: 9Dxxx
G
PRODUCT SUMMARY
VDS (V)
-60
RDS(on) (Ω) at VGS = -10 V
0.177
RDS(on) (Ω) at VGS = -4.5 V
0.246
ID (A)
Configuration
-2.8
D
P-Channel MOSFET
Single
ORDERING INFORMATION
Package
SOT-23
Lead (Pb)-free and halogen-free
SQ2361ES
(for detailed order number please see www.vishay.com/doc?79771)
ABSOLUTE MAXIMUM RATINGS (TC = 25 °C, unless otherwise noted)
PARAMETER
SYMBOL
LIMIT
Drain-source voltage
VDS
-60
Gate-source voltage
VGS
± 20
Continuous drain current
TC = 25 °C
TC = 125 °C
Continuous source current (diode conduction)
Pulsed drain current a
Single pulse avalanche current
Single pulse avalanche energy
Maximum power dissipation a
L = 0.1 mH
TC = 25 °C
TC = 125 °C
Operating junction and storage temperature range
ID
V
-2.8
-1.6
IS
-2.5
IDM
-11
IAS
-12.5
EAS
7.8
PD
UNIT
2
0.67
A
mJ
W
TJ, Tstg
-55 to +175
°C
SYMBOL
LIMIT
UNIT
RthJA
175
RthJF
75
THERMAL RESISTANCE RATINGS
PARAMETER
Junction-to-ambient
Junction-to-foot (drain)
PCB mount b
°C/W
Notes
a. Pulse test; pulse width ≤ 300 μs, duty cycle ≤ 2 %
b. When mounted on 1" square PCB (FR4 material)
S21-1074-Rev. B, 15-Nov-2021
Document Number: 66894
1
For technical questions, contact: automostechsupport@vishay.com
THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT
ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000
SQ2361ES
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Vishay Siliconix
SPECIFICATIONS (TC = 25 °C, unless otherwise noted)
PARAMETER
SYMBOL
TEST CONDITIONS
MIN.
TYP.
MAX.
UNIT
Static
Drain-source breakdown voltage
Gate-source threshold voltage
Gate-source leakage
Zero gate voltage drain current
On-state drain current a
Drain-source on-state resistance a
Forward transconductance b
Dynamic
VDS
VGS = 0 V, ID = -250 μA
-60
-
-
VGS(th)
VDS = VGS, ID = -250 μA
-1.5
-
-2.5
VDS = 0 V, VGS = ± 20 V
IGSS
IDSS
ID(on)
RDS(on)
gfs
-
-
± 100
VGS = 0 V
VDS = -60 V
-
-
-1
VGS = 0 V
VDS = -60 V, TJ = 125 °C
-
-
-50
VGS = 0 V
VDS = -60 V, TJ = 175 °C
-
-
-150
VGS = -10 V
VDS ≤ -5 V
-10
-
-
VGS = -10 V
ID = -2.4 A
-
0.130
0.177
VGS = -10 V
ID = -2.4 A, TJ = 125 °C
-
-
0.310
VGS = -10 V
ID = -2.4 A, TJ = 175 °C
-
-
0.320
VGS = -4.5 V
ID = -1.8 A
-
0.205
0.246
-
5
-
-
380
550
VDS = -10 V, ID = -2 A
V
nA
μA
A
Ω
S
b
Input capacitance
Ciss
Output capacitance
Coss
Reverse transfer capacitance
Crss
Total gate charge c
Qg
Gate-source charge c
Qgs
Gate-drain charge c
Qgd
Gate resistance
Rg
Turn-on delay time
c
Rise time c
Turn-off delay time c
Fall time c
VGS = 0 V
VDS = -30 V, f = 1 MHz
td(off)
75
42
-
9
12
1.6
-
-
3.3
-
f = 1 MHz
3.1
4.1
8.1
-
8
11
VDD = -30 V, RL = 20 Ω
ID ≅ -1.5 A, VGEN = -10 V, Rg = 1 Ω
-
9
12
-
22
26
-
4
6
VDS = -30 V, ID = -6 A
tf
Source-Drain Diode Ratings and Characteristics
50
30
-
VGS = -10 V
td(on)
tr
-
pF
nC
Ω
ns
b
Pulsed current a
ISM
Forward voltage
VSD
IF = -1.5 A, VGS = 0 V
-
-
-11
A
-
-0.9
-1.2
V
Notes
a. Pulse test; pulse width ≤ 300 μs, duty cycle ≤ 2 %
b. Guaranteed by design, not subject to production testing
c. Independent of operating temperature
Stresses beyond those listed under “Absolute Maximum Ratings” may cause permanent damage to the device. These are stress ratings only, and functional operation
of the device at these or any other conditions beyond those indicated in the operational sections of the specifications is not implied. Exposure to absolute maximum
rating conditions for extended periods may affect device reliability.
S21-1074-Rev. B, 15-Nov-2021
Document Number: 66894
2
For technical questions, contact: automostechsupport@vishay.com
THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT
ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000
SQ2361ES
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Vishay Siliconix
TYPICAL CHARACTERISTICS (TA = 25 °C, unless otherwise noted)
12
10
VGS = 10 V thru 5 V
8
ID - Drain Current (A)
ID - Drain Current (A)
9
6
VGS = 4 V
6
4
TC = 25 °C
3
2
TC = 125 °C
VGS = 3 V
TC = -55 °C
VGS = 2 V
0
0
1
2
3
4
0
0
5
2
6
8
10
Transfer Characteristics
Output Characteristics
2.0
RDS(on) - On-Resistance (Normalized)
10
gfs - Transconductance (S)
4
VGS - Gate-to-Source Voltage (V)
VDS - Drain-to-Source Voltage (V)
8
TC = 25 °C
TC = -55 °C
6
TC = 125 °C
4
2
ID = 1.7 A
1.7
VGS = 10 V
1.4
VGS = 4.5 V
1.1
0.8
0.5
0
0
1
2
3
4
ID - Drain Current (A)
5
- 50 - 25
6
0
25
50
75
100
125
150
175
TJ - Junction Temperature (°C)
On-Resistance vs. Junction Temperature
Transconductance
0.5
2.0
RDS(on) - On-Resistance (Normalized)
RDS(on) - On-Resistance (Ω)
ID = 1.9 A
0.4
0.3
VGS = 4.5 V
0.2
VGS = 10 V
0.1
1.7
VGS = 10 V
1.4
VGS = 4.5 V
1.1
0.8
0.5
0
0
2
4
6
ID - Drain Current (A)
8
On-Resistance vs. Drain Current
S21-1074-Rev. B, 15-Nov-2021
10
-50
-25
0
25
50
75
100
125
150
175
TJ - Junction Temperature (°C)
On-Resistance vs. Junction Temperature
Document Number: 66894
3
For technical questions, contact: automostechsupport@vishay.com
THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT
ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000
SQ2361ES
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Vishay Siliconix
800
10
600
1
IS - Source Current (A)
C - Capacitance (pF)
TYPICAL CHARACTERISTICS (TA = 25 °C, unless otherwise noted)
Ciss
400
TJ = 150 °C
0.1
TJ = 25 °C
0.01
200
Coss
Crss
0.001
0
0
10
20
30
40
50
0.0
60
0.2
0.4
0.6
0.8
1.0
1.2
VSD - Source-to-Drain Voltage (V)
VDS - Drain-to-Source Voltage (V)
Source-Drain Diode Forward Voltage
Capacitance
1.0
10
0.7
8
ID = 250 μA
VGS(th) - Variance (V)
VGS - Gate-to-Source Voltage (V)
ID = 6 A
VDS = 30 V
6
4
0.4
ID = 5 mA
0.1
- 0.2
2
- 0.5
- 50 - 25
0
0
2
4
6
8
Qg - Total Gate Charge (nC)
10
0
75
100
125
150
175
0.25
1.0
ID = 1.9 A
ID = 1.7 A
0.20
0.8
RDS(on) - Resistance (Ω)
RDS(on) - On-Resistance (Ω)
50
Threshold Voltage
Gate Charge
0.6
0.4
TJ = 150 °C
0.15
0.10
TJ = 150 °C
0.05
0.2
TJ = 25 °C
0
25
TJ - Temperature (°C)
TJ = 25 °C
0.00
0
2
4
6
8
VGS - Gate-to-Source Voltage (V)
On-Resistance vs. Gate-Source Voltage
S21-1074-Rev. B, 15-Nov-2021
10
0
2
4
6
8
VGS - Gate-to-Source Voltage (V)
10
On-Resistance vs. Gate-Source Voltage
Document Number: 66894
4
For technical questions, contact: automostechsupport@vishay.com
THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT
ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000
SQ2361ES
www.vishay.com
Vishay Siliconix
THERMAL RATINGS (TA = 25 °C, unless otherwise noted)
100
-55
IDM Limited
-59
10
ID - Drain Current (A)
VDS - Drain-to-Source Voltage (V)
ID = 1 mA
-63
-67
Limited by RDS(on)*
100 μs
1 ms
1
10 ms
100 ms
0.1
-71
BVDSS Limited
TC = 25 °C
Single Pulse
-75
-50
-25
0
25
50
75
100
125
150
175
TJ - Junction Temperature (°C)
0.01
0.01
1s
10 s
DC
0.1
1
10
100
VDS - Drain-to-Source Voltage (V)
* VGS > minimum VGS at which RDS(on) is specified
Drain-Source Breakdown vs. Junction Temperature
Safe Operating Area
Normalized Effective Transient
Thermal Impedance
2
1
Duty Cycle = 0.5
0.2
Notes:
0.1
PDM
0.1
0.05
t1
t2
1. Duty Cycle, D =
0.02
t1
t2
2. Per Unit Base = RthJA = 175 °C/W
3. TJM - TA = PDMZthJA(t)
Single Pulse
0.01
10-4
10-3
4. Surface Mounted
10-2
10-1
1
Square Wave Pulse Duration (s)
10
100
600
Normalized Thermal Transient Impedance, Junction-to-Ambient
S21-1074-Rev. B, 15-Nov-2021
Document Number: 66894
5
For technical questions, contact: automostechsupport@vishay.com
THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT
ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000
SQ2361ES
www.vishay.com
Vishay Siliconix
THERMAL RATINGS (TA = 25 °C, unless otherwise noted)
Normalized Effective Transient
Thermal Impedance
2
1
Duty Cycle = 0.5
0.2
0.1
0.1
0.05
0.02
Single Pulse
0.01
10-4
10-3
10-2
10-1
1
10
Square Wave Pulse Duration (s)
Normalized Thermal Transient Impedance, Junction-to-Foot
Note
• The characteristics shown in the two graphs
- Normalized Transient Thermal Impedance Junction-to-Ambient (25 °C)
- Normalized Transient Thermal Impedance Junction-to-Foot (25 °C)
are given for general guidelines only to enable the user to get a “ball park” indication of part capabilities. The data are extracted from single
pulse transient thermal impedance characteristics which are developed from empirical measurements. The latter is valid for the part
mounted on printed circuit board - FR4, size 1" x 1" x 0.062", double sided with 2 oz. copper, 100 % on both sides. The part capabilities
can widely vary depending on actual application parameters and operating conditions
Vishay Siliconix maintains worldwide manufacturing capability. Products may be manufactured at one of several qualified locations. Reliability data for Silicon
Technology and Package Reliability represent a composite of all qualified locations. For related documents such as package / tape drawings, part marking, and
reliability data, see www.vishay.com/ppg?62894.
S21-1074-Rev. B, 15-Nov-2021
Document Number: 66894
6
For technical questions, contact: automostechsupport@vishay.com
THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT
ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000
Package Information
Vishay Siliconix
SOT-23 (TO-236): 3-LEAD
b
3
E1
1
E
2
e
S
e1
D
0.10 mm
C
0.004"
A2
A
C
q
Gauge Plane
Seating Plane
Seating Plane
C
A1
Dim
0.25 mm
L
L1
MILLIMETERS
Min
INCHES
Max
Min
Max
0.044
A
0.89
1.12
0.035
A1
0.01
0.10
0.0004
0.004
A2
0.88
1.02
0.0346
0.040
b
0.35
0.50
0.014
0.020
c
0.085
0.18
0.003
0.007
D
2.80
3.04
0.110
0.120
E
2.10
2.64
0.083
0.104
E1
1.20
1.40
0.047
e
0.95 BSC
e1
L
1.90 BSC
0.40
L1
q
0.0748 Ref
0.60
0.016
0.64 Ref
S
0.024
0.025 Ref
0.50 Ref
3°
0.055
0.0374 Ref
0.020 Ref
8°
3°
8°
ECN: S-03946-Rev. K, 09-Jul-01
DWG: 5479
Document Number: 71196
09-Jul-01
www.vishay.com
1
Application Note 826
Vishay Siliconix
0.049
(1.245)
0.029
0.022
(0.559)
(0.724)
0.037
(0.950)
(2.692)
0.106
RECOMMENDED MINIMUM PADS FOR SOT-23
0.053
(1.341)
0.097
(2.459)
Recommended Minimum Pads
Dimensions in Inches/(mm)
Return to Index Return to Index
APPLICATION NOTE
Document Number: 72609
Revision: 21-Jan-08
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Revision: 09-Jul-2021
1
Document Number: 91000