SQ3410EV-T1_BE3

SQ3410EV www.vishay.com Vishay Siliconix Automotive N-Channel 30 V (D-S) 175 °C MOSFET FEATURES TSOP-6 Single D 6 • TrenchFET® Power MOSFET • AEC-Q101 Qualifiedd S 4 D 5 • 100 % Rg and UIS Tested 1 D Top View 2 D • Material categorization: for definitions of compliance please see www.vishay.com/doc?99912 3 G (1, 2, 5, 6) D PRODUCT SUMMARY (3) G VDS (V) 30 RDS(on) (Ω) at VGS = 10 V 0.0175 RDS(on) (Ω) at VGS = 4.5 V 0.0213 ID (A) Configuration (4) S 8 N-Channel MOSFET Single ORDERING INFORMATION Package TSOP-6 Lead (Pb)-free and halogen-free SQ3410EV-T1 (for detailed order number please see www.vishay.com/doc?79771) ABSOLUTE MAXIMUM RATINGS (TC = 25 °C, unless otherwise noted) PARAMETER SYMBOL LIMIT Drain-Source Voltage VDS 30 Gate-Source Voltage VGS ± 20 Continuous Drain Current TC = 25 °Ca TC = 125 °C Continuous Source Current (Diode Conduction) Pulsed Drain Currentb Single Pulse Avalanche Current Single Pulse Avalanche Energy Maximum Power Dissipationb L = 0.1 mH TC = 25 °C TC = 125 °C Operating Junction and Storage Temperature Range ID V 8 6.8 IS 6.3 IDM 32 IAS 22 EAS 24 PD UNIT 5 1.6 A mJ W TJ, Tstg - 55 to + 175 °C SYMBOL LIMIT UNIT RthJA 110 RthJF 30 THERMAL RESISTANCE RATINGS PARAMETER Junction-to-Ambient Junction-to-Foot (Drain) PCB Mountc °C/W Notes a. Package limited b. Pulse test; pulse width ≤ 300 μs, duty cycle ≤ 2 % c. When mounted on 1" square PCB (FR-4 material) d. Parametric verification ongoing S22-0167-Rev. B, 14-Feb-2022 Document Number: 67342 1 For technical questions, contact: automostechsupport@vishay.com THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000 SQ3410EV www.vishay.com Vishay Siliconix SPECIFICATIONS (TC = 25 °C, unless otherwise noted) PARAMETER SYMBOL TEST CONDITIONS MIN. TYP. MAX. UNIT Static Drain-Source Breakdown Voltage Gate-Source Threshold Voltage Gate-Source Leakage 30 - - 1.5 2.0 2.5 VDS = 0 V, VGS = ± 20 V IDSS On-State Drain Currenta ID(on) Drain-Source On-State Resistancea Forward VGS = 0 V, ID = 250 μA VDS = VGS, ID = 250 μA IGSS Zero Gate Voltage Drain Current Transconductanceb VDS VGS(th) RDS(on) gfs - - ± 100 VGS = 0 V VDS = 30 V - - 1 VGS = 0 V VDS = 30 V, TJ = 125 °C - - 50 VGS = 0 V VDS = 30 V, TJ = 175 °C - - 150 VGS = 10 V VDS ≥ 5 V 10 - - VGS = 10 V ID = 5 A - 0.014 0.0175 VGS = 10 V ID = 5 A, TJ = 125 °C - - 0.030 VGS = 10 V ID = 5 A, TJ = 175 °C - - 0.036 VGS = 4.5 V ID = 4 A - 0.017 0.0213 - 25 - - 804 1005 - 175 219 - 68 85 VDS = 15 V, ID = 5 A V nA μA A Ω S Dynamicb Input Capacitance Ciss Output Capacitance Coss Reverse Transfer Capacitance Crss Total Gate Chargec Qg Gate-Source Chargec Qgs Gate-Drain Chargec Qgd Gate Resistance Turn-On Delay Timec Rise Timec Turn-Off Delay Timec Fall Timec Source-Drain Diode Ratings and Rg VGS = 0 V VDS = 15 V, f = 1 MHz VGS = 10 V VDS = 15 V, ID = 5 A f = 1 MHz td(on) tr td(off) VDD = 15 V, RL = 3 Ω ID ≅ 5 A, VGEN = 10 V, Rg = 1 Ω tf - 14 21 - 2.4 - - 2.2 - 1.5 3.91 7 - 9 14 - 12 18 - 20 30 - 7 11 pF nC Ω ns Characteristicsb Pulsed Currenta ISM Forward Voltage VSD IF = 5 A, VGS = 0 V - - 32 A - 0.8 1.2 V Notes a. Pulse test; pulse width ≤ 300 μs, duty cycle ≤ 2 %. b. Guaranteed by design, not subject to production testing. c. Independent of operating temperature. Stresses beyond those listed under “Absolute Maximum Ratings” may cause permanent damage to the device. These are stress ratings only, and functional operation of the device at these or any other conditions beyond those indicated in the operational sections of the specifications is not implied. Exposure to absolute maximum rating conditions for extended periods may affect device reliability. S22-0167-Rev. B, 14-Feb-2022 Document Number: 67342 2 For technical questions, contact: automostechsupport@vishay.com THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000 SQ3410EV www.vishay.com Vishay Siliconix TYPICAL CHARACTERISTICS (TA = 25 °C, unless otherwise noted) 30 30 VGS = 10 V thru 4 V 24 ID - Drain Current (A) ID - Drain Current (A) 24 18 12 VGS = 3 V 6 18 12 TC = 25 °C 6 TC = 125 °C TC = - 55 °C 0 0 0 2 4 6 8 0 10 1 2 3 4 VDS - Drain-to-Source Voltage (V) VGS - Gate-to-Source Voltage (V) Output Characteristics Transfer Characteristics 50 2.0 TC = - 55 °C TC = 25 °C 40 gfs - Transconductance (S) ID - Drain Current (A) 1.6 1.2 0.8 TC = 25 °C 0.4 TC = 125 °C TC = - 55 °C 0 1 2 3 4 30 TC = 125 °C 20 10 0 0.0 0 5 2 4 6 8 VGS - Gate-to-Source Voltage (V) ID - Drain Current (A) Transfer Characteristics Transconductance 0.05 1200 0.04 960 C - Capacitance (pF) RDS(on) - On-Resistance (Ω) 5 0.03 0.02 VGS = 4.5 V VGS = 10 V 0.01 10 12 Ciss 720 480 Coss 240 Crss 0.00 0 0 6 12 18 24 30 0 6 12 18 24 ID - Drain Current (A) VDS - Drain-to-Source Voltage (V) On-Resistance vs. Drain Current Capacitance S22-0167-Rev. B, 14-Feb-2022 30 Document Number: 67342 3 For technical questions, contact: automostechsupport@vishay.com THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000 SQ3410EV www.vishay.com Vishay Siliconix TYPICAL CHARACTERISTICS (TA = 25 °C, unless otherwise noted) 2.0 ID = 5 A ID = 5 A 8 VGS = 10 V 1.7 RDS(on) - On-Resistance (Normalized) VGS - Gate-to-Source Voltage (V) 10 6 VDS = 15 V 4 2 1.4 VGS = 4.5 V 1.1 0.8 0 0 4 8 12 16 0.5 - 50 - 25 20 0 0.15 10 0.12 RDS(on) - On-Resistance (Ω) IS - Source Current (A) 100 TJ = 150 °C 1 TJ = 25 °C 0.01 100 125 150 175 0.09 0.06 TJ = 150 °C 0.03 TJ = 25 °C 0.00 0.2 0.4 0.6 0.8 1.0 1.2 0 2 VSD - Source-to-Drain Voltage (V) 6 8 10 On-Resistance vs. Gate-to-Source Voltage 40 0.2 - 0.1 ID = 5 mA - 0.4 ID = 250 μA - 0.7 0 25 50 75 100 TJ - Temperature (°C) Threshold Voltage S22-0167-Rev. B, 14-Feb-2022 125 150 175 VDS - Drain-to-Source Voltage (V) 0.5 - 1.0 - 50 - 25 4 VGS - Gate-to-Source Voltage (V) Source Drain Diode Forward Voltage VGS(th) Variance (V) 75 On-Resistance vs. Junction Temperature Gate Charge 0.001 0.0 50 TJ - Junction Temperature (°C) Qg - Total Gate Charge (nC) 0.1 25 38 ID = 1 mA 36 34 32 30 - 50 - 25 0 25 50 75 100 125 150 175 TJ - Junction Temperature (°C) Drain Source Breakdown vs. Junction Temperature Document Number: 67342 4 For technical questions, contact: automostechsupport@vishay.com THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000 SQ3410EV www.vishay.com Vishay Siliconix THERMAL RATINGS (TA = 25 °C, unless otherwise noted) 100 IDM Limited 100 μs ID - Drain Current (A) 10 1 ms ID Limited 1 10 ms Limited by RDS(on)* 0.1 100 ms 1 s, 10 s, DC BVDSS Limited TC = 25 °C Single Pulse 0.01 0.01 0.1 1 10 100 VDS - Drain-to-Source Voltage (V) * VGS > minimum VGS at which RDS(on) is specified Safe Operating Area 1 Normalized Effective Transient Thermal Impedance Duty Cycle = 0.5 0.2 0.1 Notes: 0.05 PDM 0.1 t1 t2 1. Duty Cycle, D = t1 t2 2. Per Unit Base = RthJA = 110 °C/W 0.02 3. TJM - TA = PDMZthJA(t) Single Pulse 4. Surface Mounted 0.01 10 -4 10 -3 10 -2 10 -1 1 Square Wave Pulse Duration (s) 10 100 1000 Normalized Thermal Transient Impedance, Junction-to-Ambient S22-0167-Rev. B, 14-Feb-2022 Document Number: 67342 5 For technical questions, contact: automostechsupport@vishay.com THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000 SQ3410EV www.vishay.com Vishay Siliconix THERMAL RATINGS (TA = 25 °C, unless otherwise noted) 1 Normalized Effective Transient Thermal Impedance Duty Cycle = 0.5 0.2 0.1 0.1 0.05 0.02 Single Pulse 0.01 10 -4 10 -3 10 -2 10 -1 1 Square Wave Pulse Duration (s) Normalized Thermal Transient Impedance, Junction-to-Foot Note • The characteristics shown in the two graphs - Normalized Transient Thermal Impedance Junction-to-Ambient (25 °C) - Normalized Transient Thermal Impedance Junction-to-Foot (25 °C) are given for general guidelines only to enable the user to get a “ball park” indication of part capabilities. The data are extracted from single pulse transient thermal impedance characteristics which are developed from empirical measurements. The latter is valid for the part mounted on printed circuit board - FR4, size 1" x 1" x 0.062", double sided with 2 oz. copper, 100 % on both sides. The part capabilities can widely vary depending on actual application parameters and operating conditions. Vishay Siliconix maintains worldwide manufacturing capability. Products may be manufactured at one of several qualified locations. Reliability data for Silicon Technology and Package Reliability represent a composite of all qualified locations. For related documents such as package/tape drawings, part marking, and reliability data, see www.vishay.com/ppg?67342. S22-0167-Rev. B, 14-Feb-2022 Document Number: 67342 6 For technical questions, contact: automostechsupport@vishay.com THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000 Package Information Vishay Siliconix TSOP: 5/6−LEAD JEDEC Part Number: MO-193C e1 e1 5 4 6 E1 1 2 5 4 E E1 1 3 2 3 -B- e b E -B- e 0.15 M C B A 5-LEAD TSOP b 0.15 M C B A 6-LEAD TSOP 4x 1 -A- D 0.17 Ref c R R A2 A L2 Gauge Plane Seating Plane Seating Plane 0.08 C L A1 -C- (L1) 4x 1 MILLIMETERS Dim A A1 A2 b c D E E1 e e1 L L1 L2 R Min Nom Max Min Nom Max 0.91 - 1.10 0.036 - 0.043 0.01 - 0.10 0.0004 - 0.004 0.90 - 1.00 0.035 0.038 0.039 0.30 0.32 0.45 0.012 0.013 0.018 0.10 0.15 0.20 0.004 0.006 0.008 2.95 3.05 3.10 0.116 0.120 0.122 2.70 2.85 2.98 0.106 0.112 0.117 1.55 1.65 1.70 0.061 0.065 0.067 0.95 BSC 0.0374 BSC 1.80 1.90 2.00 0.071 0.075 0.079 0.32 - 0.50 0.012 - 0.020 0.60 Ref 0.024 Ref 0.25 BSC 0.010 BSC 0.10 - - 0.004 - - 0 4 8 0 4 8 7 Nom 1 ECN: C-06593-Rev. I, 18-Dec-06 DWG: 5540 Document Number: 71200 18-Dec-06 INCHES 7 Nom www.vishay.com 1 PAD Pattern www.vishay.com Vishay Siliconix Recommended Land Pattern For TSOP-5L / TSOP-6L 5 1 2 4 6 5 4 3 1 2 3 TSOP 5L TSOP 6L 0.036 [0.922] 0.136 [3.444] 0.064 [1.626] 0.095 [2.408] 0.037 [0.950] 0.020 [0.508] 0.017 [0.442] Note • All dimensions are in inches (millimeter) ECN: C22-0860-Rev. B, 24-Oct-2022 DWG: 3010 Revision: 24-Oct-2022 Document Number: 72610 1 For technical questions, contact: pmostechsupport@vishay.com THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000 Legal Disclaimer Notice www.vishay.com Vishay Disclaimer ALL PRODUCT, PRODUCT SPECIFICATIONS AND DATA ARE SUBJECT TO CHANGE WITHOUT NOTICE TO IMPROVE RELIABILITY, FUNCTION OR DESIGN OR OTHERWISE. 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