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SQ4284EY-T1_BE3

SQ4284EY-T1_BE3

  • 厂商:

    TFUNK(威世)

  • 封装:

    SOIC8_150MIL

  • 描述:

    MOSFETs SOIC8_150MIL 2个N-沟道 VDS=40V ID=8A

  • 数据手册
  • 价格&库存
SQ4284EY-T1_BE3 数据手册
SQ4284EY www.vishay.com Vishay Siliconix Automotive Dual N-Channel 40 V (D-S) 175 °C MOSFET FEATURES SO-8 Dual D1 8 D1 7 D2 6 • TrenchFET® Power MOSFET D2 5 • AEC-Q101 qualified • 100 % Rg and UIS tested • Material categorization: for definitions of compliance please see www.vishay.com/doc?99912 Top View 2 1 G1 S1 4 3 G2 S2 D1 PRODUCT SUMMARY D2 G1 VDS (V) G2 40 RDS(on) (Ω) at VGS = 10 V 0.0135 RDS(on) (Ω) at VGS = 4.5 V 0.0148 ID (A) Configuration 8 S1 S2 N-Channel MOSFET N-Channel MOSFET Dual ORDERING INFORMATION Package SO-8 Lead (Pb)-free and halogen-free SQ4284EY (for detailed order number please see www.vishay.com/doc?79771) ABSOLUTE MAXIMUM RATINGS (TC = 25 °C, unless otherwise noted) PARAMETER SYMBOL LIMIT Drain-source voltage VDS 40 Gate-source voltage VGS ± 20 Continuous drain current TC = 25 °C a TC = 125 °C Continuous source current (diode conduction) Pulsed drain current a Single pulse avalanche current Single pulse avalanche energy Maximum power dissipation a L = 0.1 mH TC = 25 °C TC = 125 °C Operating junction and storage temperature range ID 8 IS 3.5 32 IAS 48 EAS 115 TJ, Tstg V 7.4 IDM PD UNIT 3.9 1.3 - 55 to + 175 A mJ W °C THERMAL RESISTANCE RATINGS PARAMETER Junction-to-ambient Junction-to-foot (drain) PCB Mount b SYMBOL LIMIT RthJA 120 RthJF 38 UNIT °C/W Notes a. Pulse test; pulse width ≤ 300 μs, duty cycle ≤ 2 % b. When mounted on 1" square PCB (FR-4 material) S21-0375-Rev. E, 23-Apr-2021 Document Number: 67334 1 For technical questions, contact: automostechsupport@vishay.com THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000 SQ4284EY www.vishay.com Vishay Siliconix SPECIFICATIONS (TC = 25 °C, unless otherwise noted) PARAMETER SYMBOL TEST CONDITIONS MIN. TYP. MAX. UNIT Static Drain-source breakdown voltage VDS VGS = 0 V, ID = 250 μA 40 - - VGS(th) VDS = VGS, ID = 250 μA 1.5 2.0 2.5 Gate-source leakage IGSS VDS = 0 V, VGS = ± 20 V - - ± 100 VGS = 0 V VDS = 40 V - - 1 Zero gate voltage drain current IDSS VGS = 0 V VDS = 40 V, TJ = 125 °C - - 50 VGS = 0 V VDS = 40 V, TJ = 175 °C - - 150 On-state drain current a ID(on) VGS = 10 V VDS ≥ 5 V 25 - - VGS = 10 V ID = 7 A - 0.0112 0.0135 VGS = 10 V ID = 7 A, TJ = 125 °C - - 0.0198 VGS = 10 V ID = 7 A, TJ = 175 °C - - 0.0235 VGS = 4.5 V ID = 5 A - 0.0123 0.0148 - 30 - Gate-source threshold voltage Drain-source on-state resistance a Forward transconductance b RDS(on) gfs VDS = 15 V, ID = 7 A V nA μA A Ω S Dynamic b - 1760 2200 - 252 315 Crss - 93 116 Qg - 30 45 - 5.5 - Input capacitance Ciss Output capacitance Coss Reverse transfer capacitance Total gate charge c Gate-source charge c Qgs Gate-drain charge c Gate resistance Turn-on delay time Rise Time c Turn-Off Delay Time c Fall time c VDS = 25 V, f = 1 MHz VGS = 10 V VDS = 20 V, ID = 5 A Qgd pF nC - 5 - f = 1 MHz 2.2 4.53 6.8 td(on) - 10 15 tr VDD = 20 V, RL = 4 Ω ID ≅ 5 A, VGEN = 10 V, Rg = 1 Ω - 40 60 - 32 48 - 11 17 - - 32 A - 0.76 1.2 V Rg c VGS = 0 V td(off) tf Ω ns Source-Drain Diode Ratings and Characteristics b Pulsed current a ISM Forward voltage VSD IF = 7 A, VGS = 0 V Notes a. Pulse test; pulse width ≤ 300 μs, duty cycle ≤ 2 % b. Guaranteed by design, not subject to production testing c. Independent of operating temperature Stresses beyond those listed under “Absolute Maximum Ratings” may cause permanent damage to the device. These are stress ratings only, and functional operation of the device at these or any other conditions beyond those indicated in the operational sections of the specifications is not implied. Exposure to absolute maximum rating conditions for extended periods may affect device reliability. S21-0375-Rev. E, 23-Apr-2021 Document Number: 67334 2 For technical questions, contact: automostechsupport@vishay.com THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000 SQ4284EY www.vishay.com Vishay Siliconix TYPICAL CHARACTERISTICS (TA = 25 °C, unless otherwise noted) 30 30 VGS = 10 V thru 4 V 24 ID - Drain Current (A) ID - Drain Current (A) 24 18 VGS = 3 V 12 18 12 TC = 25 °C 6 6 TC = 125 °C 0 2 4 6 8 VDS - Drain-to-Source Voltage (V) 0 10 2 3 4 5 Transfer Characteristics 100 8 80 gfs - Transconductance (S) 10 6 TC = 25 °C 4 1 VGS - Gate-to-Source Voltage (V) Output Characteristics ID - Drain Current (A) TC = - 55 °C 0 0 2 TC = - 55 °C TC = 25 °C 60 40 TC = 125 °C 20 TC = 125 °C TC = - 55 °C 0 0 0 1 2 3 4 0 5 2 6 8 10 Transconductance 0.05 2500 0.04 2000 C - Capacitance (pF) RDS(on) - On-Resistance (Ω) Transfer Characteristics 0.03 0.02 4 ID - Drain Current (A) VGS - Gate-to-Source Voltage (V) VGS = 4.5 V 0.01 Ciss 1500 1000 500 Coss VGS = 10 V Crss 0.00 0 0 6 12 18 24 ID - Drain Current (A) On-Resistance vs. Drain Current S21-0375-Rev. E, 23-Apr-2021 30 0 8 16 24 32 VDS - Drain-to-Source Voltage (V) 40 Capacitance Document Number: 67334 3 For technical questions, contact: automostechsupport@vishay.com THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000 SQ4284EY www.vishay.com Vishay Siliconix TYPICAL CHARACTERISTICS (TA = 25 °C, unless otherwise noted) 10 1.7 ID = 7 A VDS = 20 V 6 4 2 1.3 VGS = 4.5 V 1.1 0.9 0 0 8 16 24 32 0.7 - 50 - 25 40 Gate Charge 25 50 75 100 125 150 175 On-Resistance vs. Junction Temperature 100 0.05 10 0.04 TJ = 150 °C RDS(on) - On-Resistance (Ω) IS - Source Current (A) 0 TJ - Junction Temperature (°C) Qg - Total Gate Charge (nC) 1 TJ = 25 °C 0.1 0.01 0.03 TJ = 25 °C 0.02 0.01 0.001 0.0 TJ = 150 °C 0.00 0.2 0.4 0.6 0.8 1.0 0 1.2 VSD - Source-to-Drain Voltage (V) Source Drain Diode Forward Voltage 0.5 53 0.2 51 - 0.1 ID = 5 mA - 0.4 ID = 250 μA - 0.7 - 1.0 - 50 - 25 0 25 50 75 100 TJ - Temperature (°C) Threshold Voltage S21-0375-Rev. E, 23-Apr-2021 125 2 4 6 8 VGS - Gate-to-Source Voltage (V) 10 On-Resistance vs. Gate-to-Source Voltage VDS - Drain-to-Source Voltage (V) VGS(th) Variance (V) VGS = 10 V 1.5 RDS(on) - On-Resistance (Normalized) VGS - Gate-to-Source Voltage (V) ID = 5 A 8 150 175 ID = 1 mA 49 47 45 43 - 50 - 25 0 25 50 75 100 125 150 175 TJ - Junction Temperature (°C) Drain Source Breakdown vs. Junction Temperature Document Number: 67334 4 For technical questions, contact: automostechsupport@vishay.com THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000 SQ4284EY www.vishay.com Vishay Siliconix THERMAL RATINGS (TA = 25 °C, unless otherwise noted) 100 IDM Limited ID - Drain Current (A) 10 Limited by RDS(on)a 1 ms ID Limited 10 ms 1 100 ms 0.1 0.01 0.01 TC = 25 °C Single Pulse BVDSS Limited 0.1 1 10 VDS - Drain-to-Source Voltage (V) 1s 10 s, DC 100 Safe Operating Area Note a. VGS > minimum VGS at which RDS(on) is specified S21-0375-Rev. E, 23-Apr-2021 Document Number: 67334 5 For technical questions, contact: automostechsupport@vishay.com THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000 SQ4284EY www.vishay.com Vishay Siliconix THERMAL RATINGS (TA = 25 °C, unless otherwise noted) 1 Normalized Effective Transient Thermal Impedance Duty Cycle = 0.5 0.2 0.1 Notes: 0.1 PDM 0.05 t1 t2 1. Duty Cycle, D = t1 t2 2. Per Unit Base = R thJA = 110 °C/W 0.02 3. T JM - TA = PDMZthJA(t) 0.01 10 -4 4. Surface Mounted Single Pulse 10 -3 10 -2 10 -1 1 100 10 1000 Square Wave Pulse Duration (s) Normalized Thermal Transient Impedance, Junction-to-Ambient 2 Duty Cycle = 0.5 Normalized Effective Transient Thermal Impedance 1 0.5 0.2 0.1 0.1 0.05 0.02 Single Pulse 0.01 10-4 10-3 10-2 10-1 1 10 Square Wave Pulse Duration (s) Normalized Thermal Transient Impedance, Junction-to-Foot Note • The characteristics shown in the two graphs - Normalized Transient Thermal Impedance Junction-to-Ambient (25 °C) - Normalized Transient Thermal Impedance Junction-to-Foot (25 °C) are given for general guidelines only to enable the user to get a “ball park” indication of part capabilities. The data are extracted from single pulse transient thermal impedance characteristics which are developed from empirical measurements. The latter is valid for the part mounted on printed circuit board - FR4, size 1" x 1" x 0.062", double sided with 2 oz. copper, 100 % on both sides. The part capabilities can widely vary depending on actual application parameters and operating conditions. Vishay Siliconix maintains worldwide manufacturing capability. Products may be manufactured at one of several qualified locations. Reliability data for Silicon Technology and Package Reliability represent a composite of all qualified locations. For related documents such as package/tape drawings, part marking, and reliability data, see www.vishay.com/ppg?67334. S21-0375-Rev. E, 23-Apr-2021 Document Number: 67334 6 For technical questions, contact: automostechsupport@vishay.com THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000 Package Information Vishay Siliconix SOIC (NARROW): 8-LEAD JEDEC Part Number: MS-012 8 6 7 5 E 1 3 2 H 4 S h x 45 D C 0.25 mm (Gage Plane) A e B All Leads q A1 L 0.004" MILLIMETERS INCHES DIM Min Max Min Max A 1.35 1.75 0.053 0.069 A1 0.10 0.20 0.004 0.008 B 0.35 0.51 0.014 0.020 C 0.19 0.25 0.0075 0.010 D 4.80 5.00 0.189 0.196 E 3.80 4.00 0.150 e 0.101 mm 1.27 BSC 0.157 0.050 BSC H 5.80 6.20 0.228 0.244 h 0.25 0.50 0.010 0.020 L 0.50 0.93 0.020 0.037 q 0° 8° 0° 8° S 0.44 0.64 0.018 0.026 ECN: C-06527-Rev. I, 11-Sep-06 DWG: 5498 Document Number: 71192 11-Sep-06 www.vishay.com 1 Application Note 826 Vishay Siliconix RECOMMENDED MINIMUM PADS FOR SO-8 0.172 (4.369) 0.028 0.022 0.050 (0.559) (1.270) 0.152 (3.861) 0.047 (1.194) 0.246 (6.248) (0.711) Recommended Minimum Pads Dimensions in Inches/(mm) Return to Index APPLICATION NOTE Return to Index www.vishay.com 22 Document Number: 72606 Revision: 21-Jan-08 Legal Disclaimer Notice www.vishay.com Vishay Disclaimer ALL PRODUCT, PRODUCT SPECIFICATIONS AND DATA ARE SUBJECT TO CHANGE WITHOUT NOTICE TO IMPROVE RELIABILITY, FUNCTION OR DESIGN OR OTHERWISE. Vishay Intertechnology, Inc., its affiliates, agents, and employees, and all persons acting on its or their behalf (collectively, “Vishay”), disclaim any and all liability for any errors, inaccuracies or incompleteness contained in any datasheet or in any other disclosure relating to any product. Vishay makes no warranty, representation or guarantee regarding the suitability of the products for any particular purpose or the continuing production of any product. To the maximum extent permitted by applicable law, Vishay disclaims (i) any and all liability arising out of the application or use of any product, (ii) any and all liability, including without limitation special, consequential or incidental damages, and (iii) any and all implied warranties, including warranties of fitness for particular purpose, non-infringement and merchantability. Statements regarding the suitability of products for certain types of applications are based on Vishay's knowledge of typical requirements that are often placed on Vishay products in generic applications. Such statements are not binding statements about the suitability of products for a particular application. It is the customer's responsibility to validate that a particular product with the properties described in the product specification is suitable for use in a particular application. Parameters provided in datasheets and / or specifications may vary in different applications and performance may vary over time. All operating parameters, including typical parameters, must be validated for each customer application by the customer's technical experts. Product specifications do not expand or otherwise modify Vishay's terms and conditions of purchase, including but not limited to the warranty expressed therein. Hyperlinks included in this datasheet may direct users to third-party websites. These links are provided as a convenience and for informational purposes only. Inclusion of these hyperlinks does not constitute an endorsement or an approval by Vishay of any of the products, services or opinions of the corporation, organization or individual associated with the third-party website. Vishay disclaims any and all liability and bears no responsibility for the accuracy, legality or content of the third-party website or for that of subsequent links. Except as expressly indicated in writing, Vishay products are not designed for use in medical, life-saving, or life-sustaining applications or for any other application in which the failure of the Vishay product could result in personal injury or death. Customers using or selling Vishay products not expressly indicated for use in such applications do so at their own risk. Please contact authorized Vishay personnel to obtain written terms and conditions regarding products designed for such applications. No license, express or implied, by estoppel or otherwise, to any intellectual property rights is granted by this document or by any conduct of Vishay. Product names and markings noted herein may be trademarks of their respective owners. © 2023 VISHAY INTERTECHNOLOGY, INC. ALL RIGHTS RESERVED Revision: 01-Jan-2023 1 Document Number: 91000
SQ4284EY-T1_BE3 价格&库存

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SQ4284EY-T1_BE3
  •  国内价格 香港价格
  • 1+9.329001+1.12752
  • 10+8.8291710+1.06711
  • 25+8.8001925+1.06360
  • 100+8.31002100+1.00436
  • 250+8.14462250+0.98437
  • 500+6.11885500+0.73953
  • 1000+6.097921000+0.73700

库存:2500