SQJ403BEEP-T1_GE3

SQJ403BEEP www.vishay.com Vishay Siliconix Automotive P-Channel 30 V (D-S) 175 °C MOSFET FEATURES PowerPAK® SO-8L Single • TrenchFET® power MOSFET • ESD protection: 3000 V • AEC-Q101 qualified D • 100 % Rg and UIS tested 6. 15 m m m 1 13 m 4 G 5. Top View 3 S 2 S 1 S • Material categorization: for definitions of compliance please see www.vishay.com/doc?99912 S Bottom View PRODUCT SUMMARY VDS (V) -30 RDS(on) (Ω) at VGS = -10 V 0.0085 RDS(on) (Ω) at VGS = -4.5 V 0.0200 G 5400 Ω a ID (A) -30 Configuration Single P-Channel D ORDERING INFORMATION Package PowerPAK SO-8L SQJ403BEEP (for detailed order number please see www.vishay.com/doc?79771) Lead (Pb)-free and halogen-free ABSOLUTE MAXIMUM RATINGS (TC = 25 °C, unless otherwise noted) PARAMETER Drain-source voltage Gate-source voltage SYMBOL VDS VGS TC = 25 °C TC = 125 °C Continuous drain current a Continuous source current (diode conduction) Pulsed drain current b Single pulse avalanche current Single pulse avalanche energy a Maximum power dissipation b L = 10 mH TC = 25 °C TC = 125 °C Operating junction and storage temperature range Soldering recommendations (peak temperature) d, e ID IS IDM IAS EAS PD TJ, Tstg LIMIT -30 ± 20 -30 -30 -30 -84 -6.5 211 68 22 -55 to +175 260 UNIT LIMIT 68 2.2 UNIT V A mJ W °C THERMAL RESISTANCE RATINGS PARAMETER Junction to ambient Junction to case (drain) PCB mount c SYMBOL RthJA RthJC °C/W Notes a. Package limited b. Pulse test; pulse width ≤ 300 μs, duty cycle ≤ 2 % c. When mounted on 1" square PCB (FR4 material) d. See solder profile (www.vishay.com/doc?73257). The end of the lead terminal of PowerPAK SO-8L is exposed copper (not plated) as a result of the singulation process in manufacturing. A solder fillet at the exposed copper tip cannot be guaranteed and is not required to ensure adequate bottom side solder interconnection e. Rework conditions: manual soldering with a soldering iron is not recommended for leadless components S22-0060-Rev. B, 24-Jan-2022 Document Number: 67407 1 For technical questions, contact: automostechsupport@vishay.com THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000 SQJ403BEEP www.vishay.com Vishay Siliconix SPECIFICATIONS (TC = 25 °C, unless otherwise noted) PARAMETER SYMBOL TEST CONDITIONS MIN. TYP. MAX. UNIT Static Drain-Source Breakdown Voltage Gate-Source Threshold Voltage VDS VGS = 0 V, ID = -250 μA -30 - - VGS(th) VDS = VGS, ID = -250 μA -1.5 -2.0 -2.5 Gate-Source Leakage IGSS Zero Gate Voltage Drain Current IDSS On-State Drain Current a Drain-Source On-State Resistance a Forward Transconductance b ID(on) RDS(on) gfs V VDS = 0 V, VGS = ± 12 V - - ±2 μA VDS = 0 V, VGS = ± 20 V - - ±1 mA VGS = 0 V VDS = -30 V - - -1 VGS = 0 V VDS = -30 V, TJ = 125 °C - - -50 VGS = 0 V VDS = -30 V, TJ = 175 °C - - -250 VGS = -10 V VDS ≤ -5 V -30 - - VGS = -10 V ID = -10 A - 0.0070 0.0085 VGS = -10 V ID = -10 A, TJ = 125 °C - - 0.0130 VGS = -10 V ID = -10 A, TJ = 175 °C - - 0.0150 VGS = -4.5 V ID = -7 A - 0.0120 0.0200 - 32 - S - 712 890 pF - 75 164 - 9.5 - - 19 - 2 4.3 7.5 - 38 57 VDS = -10 V, ID = -10 A μA A Ω Dynamic b Output Capacitance Coss Total Gate Charge c Qg Gate-Source Charge c Qgs Gate-Drain Charge c Qgd Gate Resistance Turn-On Delay Time c Rise Time c Turn-Off Delay Time c Fall Time c Rg VGS = 0 V VGS = -10 V VDS = -15 V, f = 1 MHz VDS = -15 V, ID = -10 A f = 1 MHz td(on) tr td(off) VDD = -15 V, RL = 1.5 Ω ID ≅ -10 A, VGEN = -10 V, Rg = 1 Ω tf - 82 123 - 134 201 - 178 214 nC kΩ ns Source-Drain Diode Ratings and Characteristics b Pulsed Current a ISM Forward Voltage VSD IF = -3 A, VGS = 0 V - - -84 A - -0.75 -1.2 V Notes a. Pulse test; pulse width ≤ 300 μs, duty cycle ≤ 2 %. b. Guaranteed by design, not subject to production testing. c. Independent of operating temperature. Stresses beyond those listed under “Absolute Maximum Ratings” may cause permanent damage to the device. These are stress ratings only, and functional operation of the device at these or any other conditions beyond those indicated in the operational sections of the specifications is not implied. Exposure to absolute maximum rating conditions for extended periods may affect device reliability. S22-0060-Rev. B, 24-Jan-2022 Document Number: 67407 2 For technical questions, contact: automostechsupport@vishay.com THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000 SQJ403BEEP www.vishay.com Vishay Siliconix TYPICAL CHARACTERISTICS (25 °C, unless otherwise noted) 0.005 10-2 10-3 TJ = 25 °C 10-4 IGSS - Gate Current (A) IGSS - Gate Current (A) 0.004 0.003 0.002 10-5 TJ = 150 °C 10-6 10-7 TJ = 25 °C 10-8 0.001 10-9 10-10 0.000 0 7 14 21 28 35 VGS - Gate-to-Source Voltage (V) 0 6 12 18 24 VGS - Gate-to-Source Voltage (V) Gate Current vs. Gate-Source Voltage Gate Current vs. Gate-Source Voltage 80 30 50 VGS = 10 V thru 4 V 40 ID - Drain Current (A) ID - Drain Current (A) 60 VGS = 3 V 40 30 TC = 25 °C 20 20 10 TC = 125 °C 0 0 2 4 6 8 VDS - Drain-to-Source Voltage (V) 0 10 1 2 3 4 VGS - Gate-to-Source Voltage (V) 5 Transfer Characteristics Output Characteristics 0.025 3000 0.020 2400 VGS = 4.5 V C - Capacitance (pF) RDS(on) - On-Resistance (Ω) TC = -55 °C 0 0.015 0.010 VGS = 10 V 0.005 1800 1200 Coss 600 0 0 0 15 30 45 ID - Drain Current (A) On-Resistance vs. Drain Current S22-0060-Rev. B, 24-Jan-2022 60 0 5 10 15 20 25 VDS - Drain-to-Source Voltage (V) 30 Capacitance Document Number: 67407 3 For technical questions, contact: automostechsupport@vishay.com THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000 SQJ403BEEP www.vishay.com Vishay Siliconix TYPICAL CHARACTERISTICS (25 °C, unless otherwise noted) 2.0 10 RDS(on) - On-Resistance (Normalized) VGS - Gate-to-Source Voltage (V) ID = 10 A 8 VDS = 10 V 6 4 2 20 40 60 80 100 VGS = 4.5 V 1.1 0.8 25 50 10 0.08 1 TJ = 25 °C 0.1 0.01 100 125 150 0.04 TJ = 25 °C TJ = 150 °C 0.00 0.4 0.6 0.8 1.0 175 0.06 0.02 0.2 75 On-Resistance vs. Junction Temperature 0.10 1.2 VSD - Source-to-Drain Voltage (V) 0 2 4 6 8 VGS - Gate-to-Source Voltage (V) Source Drain Diode Forward Voltage On-Resistance vs. Gate-to-Source Voltage 10 -28 VDS - Drain-to-Source Voltage (V) 1.0 0.7 ID = 250 μA 0.4 ID = 5 mA 0.1 -0.2 -0.5 -50 0 Gate Charge 100 0.001 0.0 -25 TJ - Junction Temperature (°C) RDS(on) - On-Resistance (Ω) IS - Source Current (A) 1.4 Qg - Total Gate Charge (nC) TJ = 150 °C VGS(th) Variance (V) VGS = 10 V 0.5 -50 0 0 ID = 10 A 1.7 -25 0 25 50 75 100 125 150 175 ID = 1 mA -30 -32 -34 -36 -38 -50 -25 0 25 50 75 100 125 150 175 TJ - Temperature (°C) TJ - Junction Temperature (°C) Threshold Voltage Drain Source Breakdown vs. Junction Temperature S22-0060-Rev. B, 24-Jan-2022 Document Number: 67407 4 For technical questions, contact: automostechsupport@vishay.com THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000 SQJ403BEEP www.vishay.com Vishay Siliconix THERMAL RATINGS (TA = 25 °C, unless otherwise noted) 1000 IDM Limited ID - Drain Current (A) 100 100 μs Limited by RDS(on)(1) 1 ms 10 ID Limited 10 ms 100 ms, 1 s, 10 s, DC 1 0.1 TC = 25 °C Single Pulse BVDSS Limited 0.01 0.01 0.1 1 10 100 VDS - Drain-to-Source Voltage (V) (1) V GS > minimum VGS at which RDS(on) is specified Safe Operating Area 2 Normalized Effective Transient Thermal Impedance 1 Duty cycle = 0.5 0.2 Notes: 0.1 PDM 0.1 0.05 t1 t2 1. Duty cycle, D = t1 t2 2. Per unit base = R thJA = 68 °C/W 0.02 3. T JM - TA = PDMZthJA(t) Single pulse 4. Surface mounted 0.01 10 -4 10 -3 10 -2 10 -1 1 Square Wave Pulse Duration (s) 10 100 600 Normalized Thermal Transient Impedance, Junction-to-Ambient S22-0060-Rev. B, 24-Jan-2022 Document Number: 67407 5 For technical questions, contact: automostechsupport@vishay.com THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000 SQJ403BEEP www.vishay.com Vishay Siliconix THERMAL RATINGS (TA = 25 °C, unless otherwise noted) 2 Normalized Effective Transient Thermal Impedance 1 Duty cycle = 0.5 0.2 0.1 0.1 0.05 0.02 Single pulse 0.01 10 -4 10 -3 10 -2 10 -1 Square Wave Pulse Duration (s) 1 10 Normalized Thermal Transient Impedance, Junction-to-Case Note • The characteristics shown in the two graphs - Normalized Transient Thermal Impedance Junction-to-Ambient (25 °C) - Normalized Transient Thermal Impedance Junction-to-Case (25 °C) are given for general guidelines only to enable the user to get a “ball park” indication of part capabilities. The data are extracted from single pulse transient thermal impedance characteristics which are developed from empirical measurements. The latter is valid for the part mounted on printed circuit board - FR4, size 1" x 1" x 0.062", double sided with 2 oz. copper, 100 % on both sides. The part capabilities can widely vary depending on actual application parameters and operating conditions. Vishay Siliconix maintains worldwide manufacturing capability. Products may be manufactured at one of several qualified locations. Reliability data for Silicon Technology and Package Reliability represent a composite of all qualified locations. For related documents such as package/tape drawings, part marking, and reliability data, see www.vishay.com/ppg?67407. S22-0060-Rev. B, 24-Jan-2022 Document Number: 67407 6 For technical questions, contact: automostechsupport@vishay.com THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000 Package Information www.vishay.com Vishay Siliconix PowerPAK® SO-8L Case Outline 2 W E1 E E2 W2 W3 W1 b2 D2 b b1 L1 L L1 A1 θ e D1 b3 b4 0.25 gauge line Backside view (single) D Topside view (single) b2 E1 E E2 W2 W3 W1 F K D3 D3 L1 D2 b b1 e b3 D1 b4 Backside view (dual) D C A Topside view (dual) Document Number: 66934 1 For technical questions, contact: pmostechsupport@vishay.com THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000 Revision: 01-Nov-2021 Package Information www.vishay.com DIM. Vishay Siliconix MILLIMETERS INCHES MIN. NOM. MAX. MIN. NOM. MAX. A 1.00 1.07 1.14 0.039 0.042 0.045 A1 0.00 - 0.127 0.00 - 0.005 b 0.33 0.41 0.48 0.013 0.016 0.019 b1 0.44 0.51 0.58 0.017 0.020 0.023 b2 4.80 4.90 5.00 0.189 0.193 0.197 b3 0.094 0.004 b4 0.47 0.019 c 0.20 0.25 0.30 0.008 0.010 0.012 D 5.00 5.13 5.25 0.197 0.202 0.207 D1 4.80 4.90 5.00 0.189 0.193 0.197 D2 3.86 3.96 4.06 0.152 0.156 0.160 D3 1.63 1.73 1.83 0.064 0.068 0.072 e 1.27 BSC 0.050 BSC E 6.05 6.15 6.25 0.238 0.242 0.246 E1 4.27 4.37 4.47 0.168 0.172 0.176 E2 2.75 2.85 2.95 0.108 0.112 0.116 F - - 0.15 - - 0.006 L 0.62 0.72 0.82 0.024 0.028 0.032 L1 0.92 1.07 1.22 0.036 0.042 0.048 K 0.51 0.020 W 0.23 0.009 W1 0.41 0.016 W2 2.82 0.111 W3 θ 2.96 0° - 0.117 10° 0° - 10° ECN: C21-1498-Rev. C, 01-Nov-2021 DWG: 6044 Note • Millimeters will govern Document Number: 66934 2 For technical questions, contact: pmostechsupport@vishay.com THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000 Revision: 01-Nov-2021 PAD Pattern www.vishay.com Vishay Siliconix RECOMMENDED MINIMUM PAD FOR PowerPAK® SO-8L SINGLE 5.000 (0.197) 0.510 (0.020) 2.310 (0.091) 4.061 (0.160) 0.595 (0.023) 6.250 (0.246) 8.250 (0.325) 3.630 (0.143) 0.610 (0.024) 0.410 (0.016) 2.715 (0.107) 0.860 (0.034) 1.291 (0.051) 0.710 (0.028) 0.820 (0.032) 1.905 (0.075) 1.270 (0.050) 7.250 (0.285) Recommended Minimum Pads Dimensions in mm (inches) Revision: 07-Feb-12 1 Document Number: 63818 THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000 Legal Disclaimer Notice www.vishay.com Vishay Disclaimer ALL PRODUCT, PRODUCT SPECIFICATIONS AND DATA ARE SUBJECT TO CHANGE WITHOUT NOTICE TO IMPROVE RELIABILITY, FUNCTION OR DESIGN OR OTHERWISE. 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