SQJB02ELP
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Vishay Siliconix
Automotive Dual N-Channel 40 V (D-S) 175 °C MOSFET
FEATURES
PowerPAK® SO-8L Dual
• TrenchFET® power MOSFET
• AEC-Q101 qualified
• 100 % Rg and UIS tested
D1
D2
6.
15
m
m
3
4 S2
G2
m
1
3
.1
m
5
Top View
1
2 S1
G1
• Material categorization:
for definitions of compliance please see
www.vishay.com/doc?99912
D1
D2
Bottom View
PRODUCT SUMMARY
VDS (V)
RDS(on) () at VGS = 10 V
0.0075
RDS(on) () at VGS = 4.5 V
0.0100
ID (A) per leg
Configuration
Package
G1
40
G2
30
S1
Dual
N-Channel MOSFET
S2
N-Channel MOSFET
PowerPAK SO-8L
ABSOLUTE MAXIMUM RATINGS (TC = 25 °C, unless otherwise noted)
PARAMETER
SYMBOL
LIMIT
Drain-source voltage
VDS
40
Gate-source voltage
VGS
± 20
TC = 25 °C a
Continuous drain current
TC = 125 °C
Continuous source current (diode conduction) a
Pulsed drain current b
Single pulse avalanche current
L = 0.1 mH
Single pulse avalanche energy
TC = 25 °C
Maximum power dissipation b
TC = 125 °C
Operating junction and storage temperature range
Soldering recommendations (peak temperature)
ID
25
25
IDM
120
IAS
18
EAS
16.2
TJ, Tstg
d, e
V
30
IS
PD
UNIT
27
9
-55 to +175
260
A
mJ
W
°C
THERMAL RESISTANCE RATINGS
PARAMETER
Junction-to-ambient
Junction-to-case (drain)
PCB mount c
SYMBOL
LIMIT
RthJA
85
RthJC
5.5
UNIT
°C/W
Notes
a. Package limited
b. Pulse test; pulse width 300 μs, duty cycle 2 %
c. When mounted on 1" square PCB (FR4 material)
d. See solder profile (www.vishay.com/doc?73257). The PowerPAK SO-8L is a leadless package. The end of the lead terminal is exposed
copper (not plated) as a result of the singulation process in manufacturing. A solder fillet at the exposed copper tip cannot be guaranteed
and is not required to ensure adequate bottom side solder interconnection
e. Rework conditions: manual soldering with a soldering iron is not recommended for leadless components
S19-1033-Rev. A, 09-Dec-2019
Document Number: 77344
1
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SQJB02ELP
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SPECIFICATIONS (TC = 25 °C, unless otherwise noted)
PARAMETER
SYMBOL
TEST CONDITIONS
MIN.
TYP.
MAX.
VDS
VGS = 0 V, ID = 250 μA
40
-
-
VGS(th)
VDS = VGS, ID = 250 μA
1.2
1.7
2.2
VDS = 0 V, VGS = ± 20 V
UNIT
Static
Drain-source breakdown voltage
Gate-source threshold voltage
Gate-source leakage
Zero gate voltage drain current
On-state drain current a
Drain-source on-state resistance a
Forward transconductance b
Dynamic
IGSS
IDSS
ID(on)
RDS(on)
gfs
-
-
± 100
VGS = 0 V
VDS = 40 V
-
-
1
VGS = 0 V
VDS = 40 V, TJ = 125 °C
-
-
50
VGS = 0 V
VDS = 40 V, TJ = 175 °C
-
-
150
VGS = 10 V
VDS 5 V
25
-
-
VGS = 10 V
ID = 6 A
-
0.0060
0.0075
VGS = 4.5 V
ID = 4 A
-
0.0080
0.0100
VGS = 10 V
ID = 6 A, TJ = 125 °C
-
-
0.0111
VGS = 10 V
ID = 6 A, TJ = 175 °C
-
-
0.0133
-
38
-
-
1192
1700
-
269
400
VDS = 15 V, ID = 6 A
V
nA
μA
A
S
b
Input capacitance
Ciss
Output capacitance
Coss
VGS = 0 V
VDS = 20 V, f = 1 MHz
Reverse transfer capacitance
Crss
-
24
35
Total gate charge c
Qg
-
21
32
Gate-source charge c
Qgs
-
3.5
-
Gate-drain charge
c
Gate resistance
Turn-on delay time
Rise time c
Turn-off delay time c
Fall time c
VDS = 20 V, ID = 2 A
Qgd
nC
-
3.5
-
f = 1 MHz
1.3
2.62
3.95
td(on)
-
10
20
tr
VDD = 20 V, RL = 10
ID 2 A, VGEN = 10 V, Rg = 1
-
5
10
-
23
50
-
6
15
-
-
120
-
0.78
1.2
V
-
22
45
ns
-
13
30
nC
-
11
-
ns
Rg
c
VGS = 10 V
pF
td(off)
tf
ns
Source-Drain Diode Ratings and Characteristics b
Pulsed current a
ISM
Forward voltage
VSD
Body diode reverse recovery time
Body diode reverse recovery charge
IF = 6 A, VGS = 0 V
trr
Qrr
IF = 4 A, di/dt = 100 A/μs
A
Reverse recovery fall time
ta
Reverse recovery rise time
tb
-
11
-
ns
IRM(REC)
-
-0.95
-
A
Body diode peak reverse recovery current
Notes
a. Pulse test; pulse width 300 μs, duty cycle 2 %
b. Guaranteed by design, not subject to production testing
c. Independent of operating temperature
Stresses beyond those listed under “Absolute Maximum Ratings” may cause permanent damage to the device. These are stress ratings only, and functional operation
of the device at these or any other conditions beyond those indicated in the operational sections of the specifications is not implied. Exposure to absolute maximum
rating conditions for extended periods may affect device reliability.
S19-1033-Rev. A, 09-Dec-2019
Document Number: 77344
2
For technical questions, contact: automostechsupport@vishay.com
THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT
ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000
SQJB02ELP
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Vishay Siliconix
TYPICAL CHARACTERISTICS (TA = 25 °C, unless otherwise noted)
Axis Title
Axis Title
100
100
10000
10000
VGS = 10 V thru 4 V
1000
40
100
20
1000
60
1st line
2nd line
VGS = 3 V
60
2nd line
ID - Drain Current (A)
80
1st line
2nd line
2nd line
ID - Drain Current (A)
80
TC= 25 °C
40
100
TC= 125 °C
20
TC= -55 °C
0
0
10
0
2
4
6
8
10
10
0
VDS - Drain-to-Source Voltage (V)
2
4
6
8
10
VGS - Gate-to-Source Voltage (V)
Transfer Characteristics
Output Characteristics
Axis Title
100
0.030
TC = -55 °C
10000
60
TC = 125 °C
40
20
0
0
10
20
30
40
0.024
1000
0.018
VGS = 4.5 V
0.012
100
VGS = 10 V
0.006
0.000
50
10
0
ID - Drain Current (A)
15
30
Axis Title
Axis Title
Coss
100
100
Crss
10
10
24
32
40
10000
ID = 2 A
VDS = 20 V
8
1000
6
1st line
2nd line
1000
2nd line
VGS - Gate-to-Source Voltage (V)
1000
1st line
2nd line
2nd line
C - Capacitance (pF)
Ciss
4
100
2
0
10
0
6
12
18
24
VDS - Drain-to-Source Voltage (V)
Qg - Total Gate Charge (nC)
Capacitance
Gate Charge
S19-1033-Rev. A, 09-Dec-2019
75
10
10000
16
60
On-Resistance vs. Drain Current
10 000
8
45
ID - Drain Current (A)
Transconductance
0
1st line
2nd line
80
2nd line
RDS(on) - On-Resistance (Ω)
2nd line
gfs - Transconductance (S)
TC = 25 °C
30
Document Number: 77344
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Vishay Siliconix
TYPICAL CHARACTERISTICS (TA = 25 °C, unless otherwise noted)
Axis Title
Axis Title
100
ID = 6 A
VGS = 10 V
2nd line
IS - Source Current (A)
1.7
1000
1.4
VGS = 4.5 V
1.1
100
10000
10
TJ = 150 °C
1000
1
TJ = 25 °C
100
0.1
0.8
0.5
0.01
10
-50 -25
0
25
50
75
10
0
100 125 150 175
0.3
TJ - Junction Temperature (°C)
0.6
0.9
1.2
1.5
VSD - Source-to-Drain Voltage (V)
On-Resistance vs. Junction Temperature
Source Drain Diode Forward Voltage
Axis Title
Axis Title
0.050
0.5
10000
10000
0.2
1000
0.030
0.020
100
TJ = 150 °C
0.010
1000
-0.1
1st line
2nd line
2nd line
VGS(th) - Variance (V)
0.040
1st line
2nd line
2nd line
RDS(on) - On-Resistance (Ω)
1st line
2nd line
10000
1st line
2nd line
2nd line
RDS(on) - On-Resistance (Normalized)
2.0
ID = 5 mA
-0.4
100
ID = 250 μA
-0.7
TJ = 25 °C
0.000
-1.0
10
0
2
4
6
8
10
-50 -25
10
VGS - Gate-to-Source Voltage (V)
0
25
50
75
100 125 150 175
TJ - Junction Temperature (°C)
On-Resistance vs. Gate-to-Source Voltage
Threshold Voltage
Axis Title
48
10000
ID = 1 mA
1000
46
1st line
2nd line
2nd line
VDS - Drain-to-Source Voltage (V)
50
44
100
42
40
10
-50 -25
0
25
50
75
100 125 150 175
TJ - Junction Temperature (°C)
Drain Source Breakdown vs. Junction Temperature
S19-1033-Rev. A, 09-Dec-2019
Document Number: 77344
4
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THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT
ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000
SQJB02ELP
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Vishay Siliconix
THERMAL RATINGS (TA = 25 °C, unless otherwise noted)
Axis Title
1000
10000
IDM limited
100 μs1000
10
ID limited
1 ms
10 ms
1
100 ms,
1 s, 10 s, DC
100
Limited by RDS(on) a
0.1
1st line
2nd line
2nd line
ID - Drain Current (A)
100
BVDSS limited
TC = 25 °C,
single pulse
0.01
0.01
10
0.1
1
10
100
VDS - Drain-to-Source Voltage (V)
Safe Operating Area
Note
a. VGS > minimum VGS at which RDS(on) is specified
2
Normalized Effective Transient
Thermal Impedance
1
Duty Cycle = 0.5
0.2
Notes:
0.1
PDM
0.1
0.05
t1
t2
1. Duty Cycle, D =
t1
t2
2. Per Unit Base = R thJA = 85 °C/W
0.02
3. T JM - TA = PDMZthJA(t)
4. Surface Mounted
Single Pulse
0.01
10 - 4
10 - 3
10 - 2
10 - 1
1
Square Wave Pulse Duration (s)
10
100
600
Normalized Thermal Transient Impedance, Junction-to-Ambient
S19-1033-Rev. A, 09-Dec-2019
Document Number: 77344
5
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ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000
SQJB02ELP
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Vishay Siliconix
THERMAL RATINGS (TA = 25 °C, unless otherwise noted)
Axis Title
1
Duty Cycle = 0.5
1000
0.2
1st line
2nd line
Normalized Effective Transient
Thermal Impedance
10000
0.1
0.1
100
0.05
0.02
Single pulse
0.01
0.0001
10
0.001
0.01
0.1
1
Square Wave Pulse Duration (s)
2nd line
Normalized Thermal Transient Impedance, Junction-to-Case
Note
• The characteristics shown in the two graphs
- Normalized Transient Thermal Impedance Junction-to-Ambient (25 °C)
- Normalized Transient Thermal Impedance Junction-to-Case (25 °C)
are given for general guidelines only to enable the user to get a “ball park” indication of part capabilities. The data are extracted from single
pulse transient thermal impedance characteristics which are developed from empirical measurements. The latter is valid for the part
mounted on printed circuit board - FR4, size 1" x 1" x 0.062", double sided with 2 oz. copper, 100 % on both sides. The part capabilities
can widely vary depending on actual application parameters and operating conditions
Vishay Siliconix maintains worldwide manufacturing capability. Products may be manufactured at one of several qualified locations. Reliability data for Silicon
Technology and Package Reliability represent a composite of all qualified locations. For related documents such as package / tape drawings, part marking, and
reliability data, see www.vishay.com/ppg?77344.
S19-1033-Rev. A, 09-Dec-2019
Document Number: 77344
6
For technical questions, contact: automostechsupport@vishay.com
THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT
ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000
Package Information
www.vishay.com
Vishay Siliconix
PowerPAK® SO-8L Case Outline 2
W
E1
E
E2
W2
W3
W1
b2
D2
b
b1
L1
L
L1
A1
θ
e
D1
b3
b4
0.25 gauge line
Backside view (single)
D
Topside view (single)
b2
E3
E1
E
E2
W2
W3
W1
F
K
D3
D3
L1
D2
b
b1
e
b3
D1
b4
Backside view (dual)
D
C
A
Topside view (dual)
Revision: 25-Sep-2023
Document Number: 66934
1
For technical questions, contact: pmostechsupport@vishay.com
THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT
ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000
Package Information
www.vishay.com
DIM.
Vishay Siliconix
MILLIMETERS
INCHES
MIN.
NOM.
MAX.
MIN.
NOM.
MAX.
A
1.00
1.07
1.14
0.039
0.042
0.045
A1
0.00
-
0.127
0.00
-
0.005
b
0.33
0.41
0.48
0.013
0.016
0.019
b1
0.44
0.51
0.58
0.017
0.020
0.023
b2
4.80
4.90
5.00
0.189
0.193
0.197
b3
0.094
0.004
b4
0.47
0.019
c
0.20
0.25
0.30
0.008
0.010
0.012
D
5.00
5.13
5.25
0.197
0.202
0.207
D1
4.80
4.90
5.00
0.189
0.193
0.197
D2
3.86
3.96
4.06
0.152
0.156
0.160
D3
1.63
1.73
1.83
0.064
0.068
0.072
e
1.27 BSC
0.050 BSC
E
6.05
6.15
6.25
0.238
0.242
0.246
E1
4.27
4.37
4.47
0.168
0.172
0.176
E2
2.75
2.85
2.95
0.108
0.112
0.116
E3
6.05
6.22
6.40
0.238
0.245
0.252
F
-
-
0.15
-
-
0.006
L
0.62
0.72
0.82
0.024
0.028
0.032
L1
0.92
1.07
1.22
0.036
0.042
0.048
K
0.51
0.020
W
0.23
0.009
W1
0.41
0.016
W2
2.82
0.111
W3
2.96
0.117
0°
-
10°
0°
-
10°
ECN: C23-1026-Rev. D, 25-Sep-2023
DWG: 6044
Note
• Millimeters will govern
Revision: 25-Sep-2023
Document Number: 66934
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ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000
PAD Pattern
www.vishay.com
Vishay Siliconix
RECOMMENDED MINIMUM PAD FOR PowerPAK® SO-8L DUAL
6.7500
(0.266)
5.1300
(0.202)
0.4100
(0.016)
0, 0
1.7300
(0.068)
0.5000
(0.020)
1.9800
(0.078)
0.9150
(0.036)
0.5850
(0.023)
0.7200
(0.028)
2.1100
(0.083)
3.0750
(0.121)
7.7500
(0.305)
0.5100
(0.020)
0.2550
(0.010)
6.1500
(0.242)
3.9900
(0.157)
2.5650
(0.101)
0.4700
(0.019)
1.2700
(0.050)
0.4100
(0.016)
Recommended Minimum Pads
Dimensions in mm (inches)
Keep-out 6.75 (0.266) x 7.75 (0.305)
Revision: 07-Feb-12
1
Document Number: 63817
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Legal Disclaimer Notice
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Vishay
Disclaimer
ALL PRODUCT, PRODUCT SPECIFICATIONS AND DATA ARE SUBJECT TO CHANGE WITHOUT NOTICE TO IMPROVE
RELIABILITY, FUNCTION OR DESIGN OR OTHERWISE.
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“Vishay”), disclaim any and all liability for any errors, inaccuracies or incompleteness contained in any datasheet or in any other
disclosure relating to any product.
Vishay makes no warranty, representation or guarantee regarding the suitability of the products for any particular purpose or
the continuing production of any product. To the maximum extent permitted by applicable law, Vishay disclaims (i) any and all
liability arising out of the application or use of any product, (ii) any and all liability, including without limitation special,
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Statements regarding the suitability of products for certain types of applications are based on Vishay's knowledge of typical
requirements that are often placed on Vishay products in generic applications. Such statements are not binding statements
about the suitability of products for a particular application. It is the customer's responsibility to validate that a particular product
with the properties described in the product specification is suitable for use in a particular application. Parameters provided in
datasheets and / or specifications may vary in different applications and performance may vary over time. All operating
parameters, including typical parameters, must be validated for each customer application by the customer's technical experts.
Product specifications do not expand or otherwise modify Vishay's terms and conditions of purchase, including but not limited
to the warranty expressed therein.
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Revision: 01-Jan-2023
1
Document Number: 91000