SS22S-E3/61T

SS22S, SS23S, SS24S www.vishay.com Vishay General Semiconductor Surface-Mount Schottky Barrier Rectifier FEATURES • Low profile package Available • Ideal for automated placement • Low forward voltage drop, low power losses • High efficiency • High surge capability • Meets MSL level 1, per J-STD-020, LF maximum peak of 260 °C SMA (DO-214AC) Cathode Anode • AEC-Q101 qualified available • Material categorization: for definitions of compliance please see www.vishay.com/doc?99912 LINKS TO ADDITIONAL RESOURCES TYPICAL APPLICATIONS 3D 3D For use in low voltage, high frequency inverters, freewheeling, DC/DC converters, and polarity protection applications. 3D Models PRIMARY CHARACTERISTICS IF(AV) 2.0 A VRRM 20 V, 30 V, 40 V IFSM 40 A VF at IF = 2.0 A 0.517 V TJ max. 150 °C Package SMA (DO-214AC) Circuit configurations Single MECHANICAL DATA Case: SMA (DO-214AC) Molding compound meets UL 94 V-0 flammability rating Base P/N-E3 - RoHS-compliant, commercial grade Base P/NHE3_X - RoHS-compliant and AEC-Q101 qualified (“_X” denotes revision code e.g. A, B, .....) Terminals: matte tin plated leads, solderable per J-STD-002 and JESD 22-B102 E3 suffix meets JESD 201 class 2 whisker test, HE3 suffix meets JESD 201 class 2 whisker test Polarity: color band denotes the cathode end MAXIMUM RATINGS (TA = 25 °C unless otherwise noted) PARAMETER SYMBOL Device marking code SS22S SS23S SS24S 22S 23S 24S 30 40 20 UNIT V Maximum repetitive peak reverse voltage VRRM Maximum average forward rectified current (fig. 1) IF(AV) 2.0 A Peak forward surge current 10 ms single half sine-wave superimposed on rated load IFSM 40 A dV/dt 10 000 V/μs TJ, TSTG -55 to +150 °C Voltage rate of change (rated VR) Operating junction and storage temperature range Revision: 24-Apr-2020 Document Number: 89008 1 For technical questions within your region: DiodesAmericas@vishay.com, DiodesAsia@vishay.com, DiodesEurope@vishay.com THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000 SS22S, SS23S, SS24S www.vishay.com Vishay General Semiconductor ELECTRICAL CHARACTERISTICS (TA = 25 °C unless otherwise noted) PARAMETER TEST CONDITIONS IF = 1 A Instantaneous forward voltage IF = 2 A Reverse current Rated VR Typical junction capacitance 4.0 V, 1 MHz TJ = 25 °C TJ = 25 °C TJ = 100 °C SYMBOL VF (1) TYP. MAX. 0.436 - 0.517 0.55 13 200 μA 1.65 8 mA 130 - pF IR (2) CJ UNIT V Notes (1) Pulse test: 300 μs pulse width, 1 % duty cycle (2) Pulse test: Pulse width ≤ 40 ms THERMAL CHARACTERISTICS (TA = 25 °C unless otherwise noted) PARAMETER SYMBOL Typical thermal resistance SS22S SS23S RθJA (1) 75 RθJL (1) 25 SS24S UNIT °C/W Note (1) PCB mounted with 0.4" x 0.4" (10 mm x 10 mm) copper pad areas ORDERING INFORMATION (Example) PREFERRED P/N UNIT WEIGHT (g) PREFERRED PACKAGE CODE BASE QUANTITY DELIVERY MODE 0.064 61T 1800 7" diameter plastic tape and reel SS24S-E3/5AT 0.064 5AT 7500 13" diameter plastic tape and reel SS24SHE3_B/H (1) 0.064 H 1800 7" diameter plastic tape and reel SS24SHE3_B/I (1) 0.064 I 7500 13" diameter plastic tape and reel SS24S-E3/61T Note (1) AEC-Q101 qualified Revision: 24-Apr-2020 Document Number: 89008 2 For technical questions within your region: DiodesAmericas@vishay.com, DiodesAsia@vishay.com, DiodesEurope@vishay.com THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000 SS22S, SS23S, SS24S www.vishay.com Vishay General Semiconductor RATINGS AND CHARACTERISTICS CURVES (TA = 25 °C unless otherwise noted) 100 Resistive or Inductive Load 2nd line Instantaneous Forward Current (A) 2.0 1.6 1.2 0.8 PCB Mounted on 0.4" x 0.4" (10 mm x 10 mm) Copper Pad Areas 0.4 TJ = 150 °C 10 1000 TJ = 125 °C 1 100 TJ = 25 °C TJ = -40 °C 0.1 0 0 25 50 75 100 125 150 10 0.1 175 0.5 0.7 0.9 1.1 1.3 Instantaneous Forward Voltage (V) Fig. 1 - Forward Current Derating Curve Fig. 4 - Typical Instantaneous Forward Characteristics 100 000 1.0 2nd line Instantaneous Reverse Current (µA) D = 0.8 D = 0.3 D = 0.5 D = 0.2 D = 0.1 0.8 D = 1.0 0.6 T 0.4 0.2 D = tp/T tp 10000 TJ = 150 °C 10 000 TJ = 125 °C 1000 1000 100 TJ = 25 °C 10 1 100 0.1 TJ = -40 °C 0.01 10 0.001 0 0 0.5 1.0 1.5 2.0 10 2.5 20 30 40 50 60 70 80 90 100 Percent of Rated Peak Reverse Voltage (%) Average Forward Current (A) Fig. 2 - Forward Power Loss Characteristics Fig. 5 - Typical Reverse Leakage Characteristics 1000 50 TJ = 25 °C f = 1.0 MHz Vsig = 50 mVp-p 8.3 ms Single Half Sine-Wave at Rated TL Junction Capacitance (pF) Peak Forward Surge Current (A) 0.3 Lead Temperature (°C) 1.2 Average Power Loss (W) 10000 1st line Average Forward Rectified Current (A) 2.4 40 30 20 10 0 100 10 0 10 100 0.1 1 10 Number of Cycles at 60 Hz Reverse Voltage (V) Fig. 3 - Maximum Non-Repetitive Peak Forward Surge Current Fig. 6 - Typical Junction Capacitance 100 Revision: 24-Apr-2020 Document Number: 89008 3 For technical questions within your region: DiodesAmericas@vishay.com, DiodesAsia@vishay.com, DiodesEurope@vishay.com THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000 SS22S, SS23S, SS24S www.vishay.com Vishay General Semiconductor PACKAGE OUTLINE DIMENSIONS in inches (millimeters) SMA (DO-214AC) Cathode Band Mounting Pad Layout 0.110 (2.79) 0.100 (2.54) 0.065 (1.65) 0.049 (1.25) 0.177 (4.50) 0.157 (3.99) 0.012 (0.305) 0.006 (0.152) 0.060 (1.52) MIN. 0.208 (5.28) REF. 0.090 (2.29) 0.078 (1.98) 0.060 (1.52) 0.030 (0.76) 0.074 (1.88) MAX. 0.066 (1.68) MIN. 0.008 (0.203) 0 (0) 0.208 (5.28) 0.194 (4.93) Revision: 24-Apr-2020 Document Number: 89008 4 For technical questions within your region: DiodesAmericas@vishay.com, DiodesAsia@vishay.com, DiodesEurope@vishay.com THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. 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