SS2P5HM3/84A

SS2P5, SS2P6 www.vishay.com Vishay General Semiconductor High Current Density Surface-Mount Schottky Barrier Rectifiers FEATURES eSMP ® Series • Very low profile - typical height of 1.1 mm Available • Ideal for automated placement • Low forward voltage drop, low power losses • High efficiency • Low thermal resistance • Meets MSL level 1, per LF maximum peak of 260 °C SMP (DO-220AA) Cathode J-STD-020, • AEC-Q101 qualified available Anode LINKS TO ADDITIONAL RESOURCES 3D 3D 3D Models • Material categorization: for definitions of compliance please see www.vishay.com/doc?99912 TYPICAL APPLICATIONS For use in low voltage high frequency inverters, freewheeling, DC/DC converters, and polarity protection applications. MECHANICAL DATA PRIMARY CHARACTERISTICS Case: SMP (DO-220AA) IF(AV) 2.0 A VRRM 50 V, 60 V IFSM 50 A EAS 11.25 mJ VF 0.54 V TJ max. 150 °C Package SMP (DO-220AA) Circuit configuration Single Molding compound meets UL 94 V-0 flammability rating Base P/N-M3 - halogen-free, RoHS-compliant, and commercial grade Base P/NHM3 - halogen-free, RoHS-compliant, and automotive grade Terminals: matte tin plated J-STD-002 and JESD 22-B102 leads, solderable per M3 suffix meets JESD 201 class 2 whisker test, HM3 suffix meets JESD 201 class 2 whisker test Polarity: color band denotes the cathode end MAXIMUM RATINGS (TA = 25 °C unless otherwise noted) PARAMETER SYMBOL Device marking code SS2P5 SS2P6 25 26 UNIT Maximum repetitive peak reverse voltage VRRM Maximum average forward rectified current (fig. 1) IF(AV) 2.0 A Peak forward surge current 10 ms single half sine-wave superimposed on rated load IFSM 50 A Non-repetitive avalanche energy at IAS = 1.5 A, L = 10 mH, TJ = 25 °C Voltage rate of change (rated VR) Operating junction and storage temperature range 50 60 V EAS 11.25 mJ dV/dt 10 000 V/μs TJ, TSTG -55 to +150 °C Revision: 08-Mar-2022 Document Number: 88943 1 For technical questions within your region: DiodesAmericas@vishay.com, DiodesAsia@vishay.com, DiodesEurope@vishay.com THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000 SS2P5, SS2P6 www.vishay.com Vishay General Semiconductor ELECTRICAL CHARACTERISTICS (TA = 25 °C unless otherwise noted) PARAMETER TEST CONDITIONS Maximum instantaneous forward voltage IF = 2 A TJ = 25 °C IF = 2 A TJ = 125 °C TJ = 25 °C Maximum reverse current at rated VR TJ = 125 °C Typical junction capacitance 4.0 V, 1 MHz SYMBOL VF (1) IR (2) TYP. MAX. 0.62 0.70 0.54 0.60 - 100 μA 10 mA 1.6 CJ UNIT V 80 pF Notes (1) Pulse test: 300 μs pulse width, 1 % duty cycle (2) Pulse test: Pulse width ≤ 40 ms THERMAL CHARACTERISTICS (TA = 25 °C unless otherwise specified) PARAMETER SYMBOL Typical thermal resistance SS2P5 SS2P6 RθJA (1) 115 RθJL (1) 15 RθJC (1) 20 UNIT °C/W Note (1) Thermal resistance from junction to ambient and junction to lead mounted on PCB with 5.0 mm x 5.0 mm copper pad areas. R θJL is measured at the terminal of cathode band. RθJC is measured at the top center of the body ORDERING INFORMATION (Example) PREFERRED P/N UNIT WEIGHT (g) PREFERRED PACKAGE CODE BASE QUANTITY DELIVERY MODE SS2P5-M3/84A 0.024 84A 3000 7" diameter plastic tape and reel SS2P5-M3/85A 0.024 85A 10 000 13" diameter plastic tape and reel SS2P5HM3/84A (1) 0.024 84A 3000 7" diameter plastic tape and reel SS2P5HM3/85A (1) 0.024 85A 10 000 13" diameter plastic tape and reel Note (1) Automotive grade Revision: 08-Mar-2022 Document Number: 88943 2 For technical questions within your region: DiodesAmericas@vishay.com, DiodesAsia@vishay.com, DiodesEurope@vishay.com THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000 SS2P5, SS2P6 www.vishay.com Vishay General Semiconductor RATINGS AND CHARACTERISTICS CURVES (TA = 25 °C unless otherwise noted) Axis Title 10 000 2.0 1.6 1.2 0.8 0.4 1000 TJ = 125 °C 100 1000 10 TJ = 25 °C 1 100 0.1 0.01 TJ = -40 °C 0.001 0 80 90 100 110 120 130 140 150 10 10 TL - Lead Temperature (°C) 20 30 40 50 60 70 80 90 100 Percent of Rated Peak Reverse Voltage (%) Fig. 4 - Typical Reverse Leakage Characteristics Fig. 1 - Forward Current Derating Curve 50 1000 40 Junction Capacitance (pF) Average Forward Current (A) 10000 TJ = 150 °C 1st line 2 d li 2nd line Instantaneous Reverse Current (μA) Average Forward Current (A) 2.4 30 20 10 0 100 10 1 10 0.1 100 1 10 100 Number of Cycles at 60 Hz Reverse Voltage (V) Fig. 2 - Maximum Non-Repetitive Peak Forward Surge Current Fig. 5 - Typical Junction Capacitance Axis Title 10000 TJ = 150 °C 10 1000 TJ = 125 °C 1 100 TJ = 25 °C TJ = -40 °C 0.1 10 0.1 0.2 0.3 0.4 0.5 0.6 0.7 0.8 0.9 1.0 1.1 1.2 1000 Transient Thermal Impedance (°C/W) 2nd line Instantaneous Forward Current (A) 100 100 10 1 0.01 0.1 1 10 100 Instantaneous Forward Voltage (V) t - Pulse Duration (s) Fig. 3 - Typical Instantaneous Forward Characteristics Fig. 6 - Typical Transient Thermal Impedance Revision: 08-Mar-2022 Document Number: 88943 3 For technical questions within your region: DiodesAmericas@vishay.com, DiodesAsia@vishay.com, DiodesEurope@vishay.com THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000 SS2P5, SS2P6 www.vishay.com Vishay General Semiconductor PACKAGE OUTLINE DIMENSIONS in inches (millimeters) SMP (DO-220AA) 0.012 (0.30) REF. Cathode Band 0.053 (1.35) 0.041 (1.05) 0.086 (2.18) 0.074 (1.88) 0.142 (3.61) 0.126 (3.19) 0.036 (0.91) 0.024 (0.61) 0.103 (2.60) 0.087 (2.20) 0.032 (0.80) 0.016 (0.40) 0.158 (4.00) 0.146 (3.70) Mounting pad layout 0.105 (2.67) 0.013 (0.35) 0.004 (0.10) 0.025 0.030 (0.635) (0.762) 0.045 (1.15) 0.033 (0.85) 0.012 (0.30) 0.018 (0.45) 0.000 (0.00) 0.006 (0.15) 0.100 (2.54) 0.050 (1.27) Revision: 08-Mar-2022 Document Number: 88943 4 For technical questions within your region: DiodesAmericas@vishay.com, DiodesAsia@vishay.com, DiodesEurope@vishay.com THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. 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