SS3H10-M3/57T

SS3H9-M3, SS3H10-M3 www.vishay.com Vishay General Semiconductor High Voltage Surface-Mount Schottky Rectifier High Barrier Technology for Improved High Temperature Performance FEATURES • Low profile package • Ideal for automated placement • Guardring for overvoltage protection • Low power losses, high efficiency • Low forward voltage drop • Low leakage current SMC (DO-214AB) • High surge capability Cathode • Meets MSL level 1, per J-STD-020, LF maximum peak of 260 °C Anode • Material categorization: for definitions of compliance please see www.vishay.com/doc?99912 LINKS TO ADDITIONAL RESOURCES 3D 3D TYPICAL APPLICATIONS 3D Models For use in low voltage high frequency inverters, freewheeling, DC/DC converters, and polarity protection applications. PRIMARY CHARACTERISTICS IF(AV) 3.0 A VRRM 90 V, 100 V IFSM 100 A VF 0.65 V IR 20 μA TJ max. 175 °C Package SMC (DO-214AB) Circuit configuration Single MECHANICAL DATA Case: SMC (DO-214AB) Molding compound meets UL 94 V-0 flammability rating Base P/N-M3 - halogen-free, RoHS-compliant, and commercial grade Terminals: matte tin plated leads, solderable J-STD-002 and JESD 22-B102 M3 suffix meets JESD 201 class 2 whisker test per Polarity: color band denotes the cathode end MAXIMUM RATINGS (TA = 25 °C unless otherwise noted) PARAMETER SYMBOL Device marking code SS3H9 SS3H10 MS9 MS10 UNIT Maximum repetitive peak reverse voltage VRRM 90 100 V Working peak reverse voltage VRWM 90 100 V Maximum DC blocking voltage VDC 90 100 Maximum average forward rectified current at: TL = 115 °C IF(AV) 3.0 A Peak forward surge current 8.3 ms single half sine-wave superimposed on rated load IFSM 100 A V Peak repetitive reverse surge current at tp = 2.0 μs, 1 kHz IRRM 1.0 A Critical rate of rise of reverse voltage dV/dt 10 000 V/μs TJ, TSTG -65 to +175 °C Operating junction and storage temperature range Revision: 27-Apr-2020 Document Number: 89497 1 For technical questions within your region: DiodesAmericas@vishay.com, DiodesAsia@vishay.com, DiodesEurope@vishay.com THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000 SS3H9-M3, SS3H10-M3 www.vishay.com Vishay General Semiconductor ELECTRICAL CHARACTERISTICS (TA = 25 °C unless otherwise noted) PARAMETER TEST CONDITIONS Maximum instantaneous forward voltage (1) IF = 3.0 A SYMBOL TJ = 25 °C UNIT V 0.65 IR TJ = 125 °C SS3H10 0.8 VF TJ = 125 °C TJ = 25 °C Maximum reverse current at rated VR (2) SS3H9 20 μA 4 mA Notes (1) Pulse test: 300 μs pulse width, 1 % duty cycle (2) Pulse test: Pulse width ≤ 40 ms THERMAL CHARACTERISTICS (TA = 25 °C unless otherwise noted) PARAMETER SYMBOL SS3H9 SS3H10 Typical thermal resistance, junction to lead at TL = 25 °C RθJL 20 Typical thermal resistance, junction to ambient (1) RθJA 50 UNIT °C/W Note (1) Units mounted on PCB with 0.55" x 0.55" (14 mm x 14 mm) copper pad areas ORDERING INFORMATION (Example) PREFERRED P/N UNIT WEIGHT (g) PREFERRED PACKAGE CODE BASE QUANTITY DELIVERY MODE SS3H9-M3/57T 0.235 57T 850 7" diameter plastic tape and reel SS3H9-M3/9AT 0.235 9AT 3500 13" diameter plastic tape and reel Revision: 27-Apr-2020 Document Number: 89497 2 For technical questions within your region: DiodesAmericas@vishay.com, DiodesAsia@vishay.com, DiodesEurope@vishay.com THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000 SS3H9-M3, SS3H10-M3 www.vishay.com Vishay General Semiconductor RATINGS AND CHARACTERISTICS CURVES (TA = 25 °C unless otherwise noted) 3.5 3.0 2.5 2.0 1.5 1.0 0.5 TJ = 175 °C 1000 TJ = 150 °C TJ = 125 °C 100 1000 10 1st line 2nd line Instantaneous Reverse Current (µA) Average Forward Current (A) 10000 10 000 4.0 1 TJ = 25 °C TJ = -40 °C 0.01 0.001 0.0 25 50 75 100 125 150 10 20 175 30 40 50 60 70 80 90 Fig. 4 - Typical Reverse Characteristics Fig. 1 - Forward Current Derating Curve 125 Junction Capacitance (pF) 1000 100 75 50 25 0 100 10 1 10 100 0.1 1 10 100 Number of Cycles at 60 Hz Reverse Voltage (V) Fig. 2 - Maximum Non-Repetitive Peak Forward Surge Current Fig. 5 - Typical Junction Capacitance 100 10000 100 TJ = 175 °C 10 TJ = 150 °C 1000 1 TJ = 125 °C 100 TJ = 25 °C 0.1 TJ = -40 °C 0.01 10 0 0.2 0.4 0.6 0.8 1.0 1.2 1.4 Instantaneous Forward Voltage (V) Fig. 3 - Typical Instantaneous Forward Characteristics Transient Impedance (°C/W) 2nd line Instantaneous Forward Current (A) 100 Percent of Rated Peak Reverse Voltage (%) Case Temperature (°C) Average Forward Current (A) 100 0.1 10 1 0.01 0.1 1 10 100 t - Pulse Duration (s) Fig. 6 - Typical Transient Thermal Impedance Revision: 27-Apr-2020 Document Number: 89497 3 For technical questions within your region: DiodesAmericas@vishay.com, DiodesAsia@vishay.com, DiodesEurope@vishay.com THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000 SS3H9-M3, SS3H10-M3 www.vishay.com Vishay General Semiconductor PACKAGE OUTLINE DIMENSIONS in inches (millimeters) SMC (DO-214AB) Cathode Band Mounting Pad Layout 0.185 (4.69) MAX. 0.246 (6.22) 0.220 (5.59) 0.126 (3.20) 0.114 (2.90) 0.126 (3.20) MIN. 0.280 (7.11) 0.260 (6.60) 0.060 (1.52) MIN. 0.012 (0.305) 0.006 (0.152) 0.320 (8.13) REF. 0.103 (2.62) 0.079 (2.06) 0.060 (1.52) 0.030 (0.76) 0.008 (0.2) 0 (0) 0.320 (8.13) 0.305 (7.75) Revision: 27-Apr-2020 Document Number: 89497 4 For technical questions within your region: DiodesAmericas@vishay.com, DiodesAsia@vishay.com, DiodesEurope@vishay.com THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. 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