SS3H10HE3_A/H

SS3H9, SS3H10 www.vishay.com Vishay General Semiconductor High Voltage Surface Mount Schottky Rectifier High Barrier Technology for Improved High Temperature Performance FEATURES • Low profile package • Ideal for automated placement • Guardring for overvoltage protection • Low power losses, high efficiency • Low forward voltage drop • Low leakage current • High surge capability • Meets MSL level 1, per J-STD-020, LF maximum peak of 260 °C DO-214AB (SMC) • AEC-Q101 qualified available - Automotive ordering code: base P/NHE3 • Material categorization: for definitions of compliance please see www.vishay.com/doc?99912 PRIMARY CHARACTERISTICS IF(AV) 3.0 A VRRM 90 V, 100 V IFSM 100 A VF 0.65 V IR 20 μA TJ max. 175 °C Package DO-214AB (SMC) Diode variations Single TYPICAL APPLICATIONS For use in low voltage high frequency inverters, freewheeling, DC/DC converters, and polarity protection applications. MECHANICAL DATA Case: DO-214AB (SMC) Molding compound meets UL 94 V-0 flammability rating Base P/N-E3 - RoHS-compliant, commercial grade  Base P/NHE3_X - RoHS-compliant and AEC-Q101 qualified (“_X” denotes revision code e.g. A, B, .....) Terminals: Matte tin plated leads, solderable per J-STD-002 and JESD 22-B102 E3 suffix meets JESD 201 class 2 whisker test, HE3 suffix meets JESD 201 class 2 whisker test Polarity: Color band denotes the cathode end MAXIMUM RATINGS (TA = 25 °C unless otherwise noted) PARAMETER SYMBOL Device marking code SS3H9 SS3H10 MS9 MS10 UNIT Maximum repetitive peak reverse voltage VRRM 90 100 V Working peak reverse voltage VRWM 90 100 V Maximum DC blocking voltage VDC 90 100 V Maximum average forward rectified current at: TL = 115 °C IF(AV) 3.0 A Peak forward surge current 8.3 ms single half sine-wave superimposed on rated load IFSM 100 A Peak repetitive reverse surge current at tp = 2.0 μs, 1 kHz IRRM 1.0 A Critical rate of rise of reverse voltage dV/dt 10 000 V/μs TJ, TSTG -65 to +175 °C Operating junction and storage temperature range Revision: 18-Dec-14 Document Number: 88752 1 For technical questions within your region: DiodesAmericas@vishay.com, DiodesAsia@vishay.com, DiodesEurope@vishay.com THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000 SS3H9, SS3H10 www.vishay.com Vishay General Semiconductor ELECTRICAL CHARACTERISTICS (TA = 25 °C unless otherwise noted) PARAMETER TEST CONDITIONS Maximum instantaneous forward voltage (1) IF = 3.0 A SYMBOL TJ = 25 °C UNIT V 0.65 IR TJ = 125 °C SS3H10 0.8 VF TJ = 125 °C TJ = 25 °C Maximum reverse current at rated VR (2) SS3H9 20 μA 4 mA Notes (1) Pulse test: 300 μs pulse width, 1 % duty cycle (2) Pulse test: Pulse width  40 ms THERMAL CHARACTERISTICS (TA = 25 °C unless otherwise noted) PARAMETER SYMBOL SS3H9 SS3H10 Typical thermal resistance, junction to lead at TL = 25 °C RJL 20 Typical thermal resistance, junction to ambient (1) RJA 50 UNIT °C/W Note (1) Units mounted on PCB with 0.55" x 0.55" (14 mm x 14 mm) copper pad areas ORDERING INFORMATION (Example) PREFERRED P/N UNIT WEIGHT (g) PREFERRED PACKAGE CODE BASE QUANTITY DELIVERY MODE SS3H9-E3/57T 0.235 57T 850 7" diameter plastic tape and reel SS3H9-E3/9AT 0.235 9AT 3500 13" diameter plastic tape and reel SS3H9HE3_A/H (1) 0.235 H 850 7" diameter plastic tape and reel SS3H9HE3_A/I (1) 0.235 I 3500 13" diameter plastic tape and reel SS3H9HE3_B/H (1) 0.235 H 850 7" diameter plastic tape and reel 0.235 I 3500 13" diameter plastic tape and reel SS3H9HE3_B/I (1) Note (1) AEC-Q101 qualified RATINGS AND CHARACTERISTICS CURVES (TA = 25 C unless otherwise noted) 125 3.5 Average Forward Current (A) Average Forward Current (A) 4.0 3.0 2.5 2.0 1.5 1.0 100 75 50 25 0.5 0.0 0 25 50 75 100 125 150 175 1 10 100 Case Temperature (°C) Number of Cycles at 60 Hz Fig. 1 - Forward Current Derating Curve Fig. 2 - Maximum Non-Repetitive Peak Forward Surge Current Revision: 18-Dec-14 Document Number: 88752 2 For technical questions within your region: DiodesAmericas@vishay.com, DiodesAsia@vishay.com, DiodesEurope@vishay.com THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000 SS3H9, SS3H10 www.vishay.com Vishay General Semiconductor 1000 TJ = 175 °C Junction Capacitance (pF) Instantaneous Forward Current (A) 100 TJ = 150 °C 10 1 TJ = 125 °C 0.1 TJ = 25 °C 0.01 10 0 0.2 0.4 0.6 0.8 1.0 1.2 1.4 0.1 1 10 100 Instantaneous Forward Voltage (V) Reverse Voltage (V) Fig. 3 - Typical Instantaneous Forward Characteristics Fig. 5 - Typical Junction Capacitance 10 000 100 TJ = 175 °C 1000 Transient Impedance (°C/W) Instantaneous Reverse Current (µA) 100 TJ = 150 °C TJ = 125 °C 100 10 1 TJ = 25 °C 0.1 1 0.01 0.01 10 20 30 40 50 60 70 80 90 10 100 0.1 1 10 100 t - Pulse Duration (s) Percent of Rated Peak Reverse Voltage (%) Fig. 4 - Typical Reverse Characteristics Fig. 6 - Typical Transient Thermal Impedance PACKAGE OUTLINE DIMENSIONS in inches (millimeters) DO-214AB (SMC) Cathode Band Mounting Pad Layout 0.185 (4.69) MAX. 0.246 (6.22) 0.220 (5.59) 0.126 (3.20) 0.114 (2.90) 0.126 (3.20) MIN. 0.280 (7.11) 0.260 (6.60) 0.060 (1.52) MIN. 0.012 (0.305) 0.006 (0.152) 0.320 (8.13) REF. 0.103 (2.62) 0.079 (2.06) 0.060 (1.52) 0.030 (0.76) 0.008 (0.2) 0 (0) 0.320 (8.13) 0.305 (7.75) Revision: 18-Dec-14 Document Number: 88752 3 For technical questions within your region: DiodesAmericas@vishay.com, DiodesAsia@vishay.com, DiodesEurope@vishay.com THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. 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No license, express or implied, by estoppel or otherwise, to any intellectual property rights is granted by this document or by any conduct of Vishay. Product names and markings noted herein may be trademarks of their respective owners. Revision: 13-Jun-16 1 Document Number: 91000