SUD23N06-31L-T4-E3

SUD23N06-31L Vishay Siliconix N-Channel 60 V (D-S), 175 °C MOSFET, Logic Level FEATURES PRODUCT SUMMARY rDS(on) (Ω) ID (A)a 0.031 at VGS = 10 V 23 0.045 at VGS = 4.5 V 19.5 VDS (V) 60 • TrenchFET® Power MOSFET • 175 °C Junction Temperature Available RoHS* COMPLIANT TO-252 D G Drain Connected to Tab G D S S Top View N-Channel MOSFET Ordering Information: SUD23N06-31L SUD23N06-31L-E3 (Lead (Pb)-free) ABSOLUTE MAXIMUM RATINGS TC = 25 °C, unless otherwise noted Parameter Gate-Source Voltage Continuous Drain Current (TJ = 175 °C)b TC = 25 °C TC = 100 °C Symbol Limit Unit VGS ± 20 V 23 ID 16.5 IDM 50 Continuous Source Current (Diode Conduction) IS 23 Avalanche Current IAS 20 Pulsed Drain Current Single Avalanche Energy (Duty Cycle ≤ 1 %) Maximum Power Dissipation L = 0.1 mH TC = 25 °C TA = 25 °C EAS 20 mJ 100 PD W 3a TJ, Tstg Operating Junction and Storage Temperature Range A - 55 to 175 °C THERMAL RESISTANCE RATINGS Parameter Maximum Junction-to-Ambienta Symbol t ≤ 10 sec Steady State Maximum Junction-to-Case RthJA RthJC Typical Maximum 18 22 40 50 3.2 4 Unit °C/W Notes: a. Surface Mounted on 1" x 1" FR4 board, t ≤ 10 sec. * Pb containing terminations are not RoHS compliant, exemptions may apply. Document Number: 72145 S-71660-Rev. C, 06-Aug-07 www.vishay.com 1 SUD23N06-31L Vishay Siliconix SPECIFICATIONS TJ = 25 °C, unless otherwise noted Parameter Symbol Test Conditions Min Typa Max 2.0 3.0 Unit Static Drain-Source Breakdown Voltage Gate Threshold Voltage Gate-Body Leakage V(BR)DSS VGS = 0 V, ID = 250 µA 60 VGS(th) VDS = VGS, ID = 250 µA 1.0 IGSS VDS = 0 V, VGS = ± 20 V ± 100 VDS = 60 V, VGS = 0 V 1 VDS = 60 V, VGS = 0 V, TJ = 125 °C 50 Zero Gate Voltage Drain Current IDSS On-State Drain Currentb ID(on) VDS = 60 V, VGS = 0 V, TJ = 175 °C VDS = 5 V, VGS = 10 V VGS = 10 V, ID = 15 A Drain-Source On-State Resistanceb Forward Transconductanceb rDS(on) gfs V nA µA 250 50 A 0.025 0.031 VGS = 10 V, ID = 15 A, TJ = 125 °C 0.055 VGS = 10 V, ID = 15 A, TJ = 175 °C 0.069 VGS = 4.5 V, ID = 10 A 0.037 VDS = 15 V, ID = 15 A 20 Ω 0.045 S Dynamica Input Capacitance Ciss Output Capacitance Coss Reverse Transfer Capacitance Crss Total Gate Chargec Qg Gate-Source Chargec Qgs c Gate-Drain Charge Qgd Turn-On Delay Timec td(on) Rise Timec Turn-Off Delay Time tr c Fall Timec td(off) 670 VGS = 0 V, VDS = 25 V, f = 1 MHz pF 140 60 11 VDS = 30 V, VGS = 10 V, ID = 23 A 17 nC 3 3 VDD = 30 V, RL = 1.3 Ω ID ≅ 23 A, VGEN = 10 V, Rg = 2.5 Ω tf 8 15 15 25 30 45 25 40 ns Source-Drain Diode Ratings and Characteristics (TC = 25 °C) Pulsed Current ISM Diode Forward Voltage VSD IF = 15 A, VGS = 0 V 1.0 1.5 V Reverse Recovery Time trr IF = 15 A, di/dt = 100 A/µs 30 60 ns 50 A Notes: a. For design aid only; not subject to production testing. b. Pulse test; pulse width ≤ 300 µs, duty cycle ≤ 2 %. c. Independent of operating temperature. Stresses beyond those listed under “Absolute Maximum Ratings” may cause permanent damage to the device. These are stress ratings only, and functional operation of the device at these or any other conditions beyond those indicated in the operational sections of the specifications is not implied. Exposure to absolute maximum rating conditions for extended periods may affect device reliability. www.vishay.com 2 Document Number: 72145 S-71660-Rev. C, 06-Aug-07 SUD23N06-31L Vishay Siliconix TYPICAL CHARACTERISTICS 25 °C unless noted 50 50 VGS = 10 thru 6 V 5V 40 I D - Drain Current (A) I D - Drain Current (A) 40 30 20 4V 10 30 20 TC = 125 °C 10 25 °C 3V - 55 °C 0 0 0 2 4 6 8 0 10 1 2 3 4 5 VDS - Drain-to-Source Voltage (V) VGS - Gate-to-Source Voltage (V) Output Characteristics Transfer Characteristics 32 6 0.10 TC = - 55 °C 0.08 r DS(on) - On-Resistance (Ω) g fs - Transconductance (S) 25 °C 24 125 °C 16 8 0 VGS = 4.5 V 0.04 VGS = 10 V 0.02 0.00 0 5 10 15 20 25 0 10 20 30 40 ID - Drain Current (A) ID - Drain Current (A) Transconductance On-Resistance vs. Drain Current 50 10 V GS - Gate-to-Source Voltage (V) 1000 800 C - Capacitance (pF) 0.06 Ciss 600 400 200 Coss Crss 0 0 VDS = 30 V ID = 23 A 8 6 4 2 0 10 20 30 40 50 VDS - Drain-to-Source Voltage (V) Capacitance Document Number: 72145 S-71660-Rev. C, 06-Aug-07 60 0 2 4 6 8 10 12 Qg - Total Gate Charge (nC) Gate Charge www.vishay.com 3 SUD23N06-31L Vishay Siliconix TYPICAL CHARACTERISTICS 25 °C unless noted 100 2.5 VGS = 10 V ID = 15 A I S - Source Current (A) rDS(on) - On-Resistance (Normalized) 2.0 1.5 1.0 TJ = 150 °C TJ = 25 °C 10 0.5 0.0 - 50 1 - 25 0 25 50 75 100 125 150 TJ - Junction Temperature ( °C) On-Resistance vs. Junction Temperature www.vishay.com 4 175 0 0.3 0.6 0.9 1.2 1.5 VSD - Source-to-Drain Voltage (V) Source-Drain Diode Forward Voltage Document Number: 72145 S-71660-Rev. C, 06-Aug-07 SUD23N06-31L Vishay Siliconix THERMAL RATINGS 100 25 *rDS(on) Limited 10 µs 100 µs I D - Drain Current (A) I D - Drain Current (A) 20 15 10 10 1 ms 10 ms 1 100 ms dc TC = 25 °C Single Pulse 5 0 0.1 0 25 50 75 100 125 150 175 0.1 1 10 100 VDS - Drain-to-Source Voltage (V) *VGS > minimum VGS at which rDS(on) is specified TA - Ambient Temperature (°C) Maximum Drain Current vs. Ambient Temperature Safe Operating Area 2 Normalized Effective Transient Thermal Impedance 1 Duty Cycle = 0.5 0.2 0.1 0.1 0.05 0.02 Single Pulse 0.01 10- 4 10- 3 10- 2 10- 1 1 10 Square Wave Pulse Duration (sec) Normalized Thermal Transient Impedance, Junction-to-Case Vishay Siliconix maintains worldwide manufacturing capability. Products may be manufactured at one of several qualified locations. Reliability data for Silicon Technology and Package Reliability represent a composite of all qualified locations. For related documents such as package/tape drawings, part marking, and reliability data, see http://www.vishay.com/ppg?72145. Document Number: 72145 S-71660-Rev. C, 06-Aug-07 www.vishay.com 5 Legal Disclaimer Notice Vishay Disclaimer All product specifications and data are subject to change without notice. Vishay Intertechnology, Inc., its affiliates, agents, and employees, and all persons acting on its or their behalf (collectively, “Vishay”), disclaim any and all liability for any errors, inaccuracies or incompleteness contained herein or in any other disclosure relating to any product. Vishay disclaims any and all liability arising out of the use or application of any product described herein or of any information provided herein to the maximum extent permitted by law. The product specifications do not expand or otherwise modify Vishay’s terms and conditions of purchase, including but not limited to the warranty expressed therein, which apply to these products. No license, express or implied, by estoppel or otherwise, to any intellectual property rights is granted by this document or by any conduct of Vishay. The products shown herein are not designed for use in medical, life-saving, or life-sustaining applications unless otherwise expressly indicated. Customers using or selling Vishay products not expressly indicated for use in such applications do so entirely at their own risk and agree to fully indemnify Vishay for any damages arising or resulting from such use or sale. Please contact authorized Vishay personnel to obtain written terms and conditions regarding products designed for such applications. Product names and markings noted herein may be trademarks of their respective owners. Document Number: 91000 Revision: 18-Jul-08 www.vishay.com 1