SUD80460E-GE3

SUD80460E www.vishay.com Vishay Siliconix N-Channel 150 V (D-S) 175 °C MOSFET FEATURES TO-252 TO • ThunderFET® power MOSFET • Maximum 175 °C junction temperature Drain connected to tab • 100 % Rg and UIS tested • Material categorization: for definitions of compliance please see www.vishay.com/doc?99912 APPLICATIONS S D D • Boost converter G Top View • LED backlighting • Synchronous rectification PRODUCT SUMMARY VDS (V) RDS(on) max. () at VGS = 10 V • Power supplies 150 • DC/AC inverter 0.0447 Qg typ. (nC) 10.5 ID (A) 42 d Configuration G S N-Channel MOSFET Single ORDERING INFORMATION Package TO-252 Lead (Pb)-free and halogen-free SUD80460E-GE3 ABSOLUTE MAXIMUM RATINGS (TA = 25 °C, unless otherwise noted) PARAMETER SYMBOL LIMIT Drain-source voltage VDS 150 Gate-source voltage VGS ± 20 Continuous drain current TC = 25 °C TC = 125 °C Pulsed drain current (t = 100 μs) Continuous source-drain diode current Single pulse avalanche current a L = 0.1 mH Single pulse avalanche energy a Maximum power dissipation TC = 25 °C TC = 125 °C Operating junction and storage temperature range ID 42 d 40 IS 42 d IAS 25 EAS 31.25 TJ, Tstg Soldering recommendations (peak temperature) c V 18.1 IDM PD UNIT 65.2 b 21.7 b -55 to +175 260 A mJ W °C THERMAL RESISTANCE RATINGS PARAMETER Maximum junction-to-ambient (PCB mount) c Maximum junction-to-case (drain) Steady state SYMBOL MAXIMUM RthJA 50 RthJC 2.3 UNIT °C/W Notes a. Duty cycle  1 %. b. See SOA curve for voltage derating. c. When mounted on 1" square PCB (FR4 material). d. Package limited. S16-2150-Rev. A, 17-Oct-16 Document Number: 76248 1 For technical questions, contact: pmostechsupport@vishay.com THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000 SUD80460E www.vishay.com Vishay Siliconix SPECIFICATIONS (TJ = 25 °C, unless otherwise noted) PARAMETER SYMBOL TEST CONDITIONS MIN. TYP. MAX. UNIT VDS VGS = 0 V, ID = 250 μA 150 - - V VGS(th) VDS = VGS , ID = 250 μA 2 - 4 V IGSS VDS = 0 V, VGS = ± 20 V - - 250 nA VDS = 150 V, VGS = 0 V - - 1 VDS = 150 V, VGS = 0 V, TJ = 125 °C - - 150 VDS = 150 V, VGS = 0 V, TJ = 175 °C - - 5 mA ID(on) VDS  10 V, VGS = 10 V 30 - - A RDS(on) VGS = 10 V, ID = 8.3 A - 0.0372 0.0447  gfs VDS = 15 V, ID = 8.3 A - 11 - S - 560 - - 148 - Static Drain-source breakdown voltage Gate-source threshold voltage Gate-source leakage Zero gate voltage drain current On-state drain current a Drain-source on-state resistance a Forward transconductance a Dynamic IDSS μA b Input capacitance Ciss Output capacitance Coss VDS = 50 V, VGS = 0 V, f = 1 MHz pF Reverse transfer capacitance Crss - 8 - Total gate charge Qg - 10.5 16 Gate-source charge Qgs VDS = 75 V, VGS = 10 V, ID = 8.3 A - 2.7 - Gate-drain charge Qgd - 3.1 - Gate resistance Rg f = 1 MHz 1.44 7.2 14.4 - 8 16 - 20 30 - 15 25 tf - 30 50 Pulse diode forward current (t = 100 μs) ISM - - 42 Body diode voltage VSD - 0.85 1.5 V - 68 102 ns - 0.21 0.32 μC Turn-on delay time Rise time Turn-off delay time Fall time td(on) tr td(off) VDD = 75 V, RL = 10.7 , ID  7 A, VGEN = 10 V, Rg = 1  nC  ns Drain-Source Body Diode Characteristics Body diode reverse recovery time trr Body diode reverse recovery charge Qrr IF = 7 A, VGS = 0 V IF = 7 A, di/dt = 100 A/μs Reverse recovery fall time ta - 56 - Reverse recovery rise time tb - 12 - IRM(REC) - 5.5 10 Body diode peak reverse recovery charge A ns A Notes a. Pulse test; pulse width  300 μs, duty cycle  2 %. b. Guaranteed by design, not subject to production testing. c. Independent of operating temperature. Stresses beyond those listed under “Absolute Maximum Ratings” may cause permanent damage to the device. These are stress ratings only, and functional operation of the device at these or any other conditions beyond those indicated in the operational sections of the specifications is not implied. Exposure to absolute maximum rating conditions for extended periods may affect device reliability. S16-2150-Rev. A, 17-Oct-16 Document Number: 76248 2 For technical questions, contact: pmostechsupport@vishay.com THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000 SUD80460E www.vishay.com Vishay Siliconix TYPICAL CHARACTERISTICS (25 °C, unless otherwise noted) Axis Title Axis Title 10000 30 TC = 125 °C VGS = 10 V thru 8 V 1000 1st line 2nd line VGS = 6 V 15 100 10 VGS = 5 V 45 1000 1st line 2nd line 20 2nd line ID - Drain Current (A) VGS = 7 V 25 2nd line ID - Drain Current (A) 10000 60 30 100 TC = 25 °C 15 5 TC = -55 °C VGS = 4 V 0 10 0.5 1 1.5 10 0 2 2 4 VGS - Gate-to-Source Voltage (V) 2nd line Output Characteristics Transfer Characteristics Axis Title Axis Title 1500 0.05 1st line 2nd line 1000 VGS = 10 V 0.04 100 2nd line C - Capacitance (pF) 10000 0.03 10000 1200 1000 900 Ciss 600 100 300 Coss Crss 0.02 10 0 5 10 15 20 25 0 10 0 30 20 40 60 80 ID - Drain Current (A) 2nd line VDS - Drain-to-Source Voltage (V) 2nd line On-Resistance vs. Drain Current and Gate Voltage Capacitance Axis Title 1st line 2nd line VDS = 120 V 4 100 2 0 10 0 3 6 9 12 VGS = 10 V, ID = 8.3 A 2.0 1000 1.7 1st line 2nd line 1000 VDS = 35 V 2nd line RDS(on) - On-Resistance (Normalized) VDS = 75 V 8 6 10000 2.3 10000 ID = 8.3 A 100 Axis Title 10 2nd line VGS - Gate-to-Source Voltage (V) 8 VDS - Drain-to-Source Voltage (V) 2nd line 0.06 2nd line RDS(on) - On-Resistance (Ω) 6 1st line 2nd line 0 0 1.4 1.1 100 0.8 0.5 10 -50 -25 0 25 50 75 100 125 150 Qg - Total Gate Charge (nC) 2nd line TJ - Junction Temperature (°C) 2nd line Gate Charge On-Resistance vs. Junction Temperature S16-2150-Rev. A, 17-Oct-16 Document Number: 76248 3 For technical questions, contact: pmostechsupport@vishay.com THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000 SUD80460E www.vishay.com Vishay Siliconix TYPICAL CHARACTERISTICS (25 °C, unless otherwise noted) Axis Title Axis Title 100 0.2 10000 10000 TJ = 150 °C 1000 1 1st line 2nd line TJ = 25 °C 0.1 100 0.01 0.001 0.15 1000 0.1 100 0.05 0.2 0.4 0.6 0.8 1.0 TJ = 25 °C 0 10 0 TJ = 150 °C 1.2 10 4 5 6 7 9 10 VSD - Source-to-Drain Voltage (V) 2nd line VGS - Gate-to-Source Voltage (V) 2nd line Source-Drain Diode Forward Voltage On-Resistance vs. Gate-to-Source Voltage Axis Title Axis Title 3.5 25 10000 2nd line gfs - Transconductance (S) 2.9 1st line 2nd line 1000 2.6 2.3 100 2.0 1.7 10 -50 -25 0 25 50 10000 TC = -55 °C ID = 250 μA 3.2 2nd line VGS(th) (V) 8 20 TC = 25 °C 1000 15 1st line 2nd line 2nd line IS - Source Current (A) 10 1st line 2nd line 2nd line RDS(on) - On-Resistance (Ω) ID = 8.3 A TC = 125 °C 10 100 5 0 75 100 125 150 175 10 0 5 10 15 TJ - Temperature (°C) 2nd line ID - Drain Current (A) 2nd line Threshold Voltage Transconductance 20 25 Axis Title 100 ID limited 100 μs 10 1000 Limited by RDS(on) 1 (1) 1 ms 10 ms DC, 10 s, 1 s, 100ms 100 1st line 2nd line 2nd line ID - Drain Current (A) 10000 IDM limited 0.1 TC = 25 °C Single pulse BVDSS limited 0.01 0.1 (1) 1 10 100 10 1000 VDS - Drain-to-Source Voltage (V) VGS > minimum VGS at which RDS(on) is specified Safe Operating Area, Junction-to-Ambient S16-2150-Rev. A, 17-Oct-16 Document Number: 76248 4 For technical questions, contact: pmostechsupport@vishay.com THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000 SUD80460E www.vishay.com Vishay Siliconix TYPICAL CHARACTERISTICS (25 °C, unless otherwise noted) Axis Title 10000 21 1000 1st line 2nd line 2nd line ID - Drain Current (A) 28 14 100 7 0 10 0 25 50 75 100 125 150 175 TC - Case Temperature (°C) 2nd line Current Derating a Axis Title ID = 1 mA 190 180 2nd line IDAV (A) 1000 1st line 2nd line 2nd line VDS - Drain-to-Source Voltage (V) 100 10000 200 25 °C 10 150 °C 100 170 160 10 -50 -25 0 25 50 75 100 125 150 175 TJ - Temperature (°C) 2nd line Drain Source Breakdown vs. Junction Temperature 1 0.000001 0.00001 0.0001 0.001 0.01 Time (s) 2nd line IDAV vs. Time Note a. The power dissipation PD is based on TJ max. = 25 °C, using junction-to-case thermal resistance, and is more useful in settling the upper dissipation limit for cases where additional heatsinking is used. It is used to determine the current rating, when this rating falls below the package limit. S16-2150-Rev. A, 17-Oct-16 Document Number: 76248 5 For technical questions, contact: pmostechsupport@vishay.com THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000 SUD80460E www.vishay.com Vishay Siliconix TYPICAL CHARACTERISTICS (25 °C, unless otherwise noted) 2 Normalized Effective Transient Thermal Impedance 1 Duty Cycle = 0.5 0.2 0.1 0.1 0.05 0.02 Single Pulse 0.01 10 -4 10 -3 10 -2 10 -1 1 Square Wave Pulse Duration (sec) 10 100 1K Normalized Thermal Transient Impedance, Junction-to-Ambient 2 Normalized Effective Transient Thermal Impedance 1 Duty Cycle = 0.5 0.2 0.1 0.1 0.02 0.05 Single Pulse 0.01 10 -4 10 -3 10 -2 10 -1 Square Wave Pulse Duration (sec) 1 10 1 00 Normalized Thermal Transient Impedance, Junction-to-Case Vishay Siliconix maintains worldwide manufacturing capability. Products may be manufactured at one of several qualified locations. Reliability data for Silicon Technology and Package Reliability represent a composite of all qualified locations. For related documents such as package/tape drawings, part marking, and reliability data, see www.vishay.com/ppg?76248. S16-2150-Rev. A, 17-Oct-16 Document Number: 76248 6 For technical questions, contact: pmostechsupport@vishay.com THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000 Package Information www.vishay.com Vishay Siliconix TO-252AA Case Outline VERSION 1: FACILITY CODE = Y E A C2 H D D1 L3 b3 e b2 e1 L gage plane height (0.5 mm) L4 b L5 E1 C A1 MILLIMETERS DIM. MIN. A 2.18 MAX. 2.38 A1 - 0.127 b 0.64 0.88 b2 0.76 1.14 b3 4.95 5.46 C 0.46 0.61 C2 0.46 0.89 D 5.97 6.22 D1 4.10 - E 6.35 6.73 E1 4.32 - H 9.40 10.41 e 2.28 BSC e1 4.56 BSC L 1.40 1.78 L3 0.89 1.27 L4 - 1.02 L5 1.01 1.52 Note • Dimension L3 is for reference only Revision: 03-Oct-2022 Document Number: 71197 1 For technical questions, contact: pmostechsupport@vishay.com THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000 Package Information www.vishay.com Vishay Siliconix VERSION 2: FACILITY CODE = N E e A b3 E1 E1/2 c2 θ e L4 L5 L6 H D L3 D1 θ 0.25 (3°) DETAIL "B" C A B (3°) DETAIL "B" A1 C L (L1) b1 SEATING C PLANE θ L2 GAUGE PLANE H C (b) c1 3x b 2x e c 2x b2 MILLIMETERS MILLIMETERS DIM. A MIN. 2.18 MAX. DIM. MIN. 2.39 L 1.50 A1 - 0.13 L1 b 0.65 0.89 L2 MAX. 1.78 2.74 ref. 0.51 BSC b1 0.64 0.79 L3 b2 0.76 1.13 L4 - 1.02 b3 4.95 5.46 L5 1.14 1.49 c 0.46 0.61 L6 0.65 0.85 c1 0.41 0.56  0° 10° 1 0° 15° 2 25° 35° c2 0.46 0.60 D 5.97 6.22 D1 5.21 - E 6.35 6.73 E1 4.32 e H 2.29 BSC 9.94 0.89 1.27 Notes • Dimensioning and tolerance confirm to ASME Y14.5M-1994 • All dimensions are in millimeters. Angles are in degrees • Heat sink side flash is max. 0.8 mm • Radius on terminal is optional 10.34      ECN: E22-0399-Rev. R, 03-Oct-2022 DWG: 5347 Revision: 03-Oct-2022 Document Number: 71197 2 For technical questions, contact: pmostechsupport@vishay.com THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000 Application Note 826 Vishay Siliconix RECOMMENDED MINIMUM PADS FOR DPAK (TO-252) 0.224 0.243 0.087 (2.202) 0.090 (2.286) (10.668) 0.420 (6.180) (5.690) 0.180 0.055 (4.572) (1.397) Recommended Minimum Pads Dimensions in Inches/(mm) Return to Index Return to Index APPLICATION NOTE Document Number: 72594 Revision: 21-Jan-08 www.vishay.com 3 Legal Disclaimer Notice www.vishay.com Vishay Disclaimer ALL PRODUCT, PRODUCT SPECIFICATIONS AND DATA ARE SUBJECT TO CHANGE WITHOUT NOTICE TO IMPROVE RELIABILITY, FUNCTION OR DESIGN OR OTHERWISE. Vishay Intertechnology, Inc., its affiliates, agents, and employees, and all persons acting on its or their behalf (collectively, “Vishay”), disclaim any and all liability for any errors, inaccuracies or incompleteness contained in any datasheet or in any other disclosure relating to any product. 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ALL RIGHTS RESERVED Revision: 01-Jan-2022 1 Document Number: 91000