SUM110N04-04-E3

SUM110N04-04 Vishay Siliconix N-Channel 40-V (D-S) 175 °C MOSFET FEATURES PRODUCT SUMMARY V(BR)DSS (V) rDS(on) (Ω) ID (A) 40 0.0035 at VGS = 10 V 110a • TrenchFET® Power MOSFET • 175 °C Junction Temperature Available RoHS* COMPLIANT TO-263 D G G D S Top View S Ordering Information: SUM110N04-04 SUM110N04-04-E3 (Lead (Pb)-free) N-Channel MOSFET ABSOLUTE MAXIMUM RATINGS TC = 25 °C, unless otherwise noted Parameter Symbol Limit Drain-Source Voltage VDS 40 Gate-Source Voltage VGS 20 Continuous Drain Current (TJ = 175 °C) TC = 25 °C TC = 125 °C Pulsed Drain Current Avalanche Current Repetitive Avalanche Energyb Maximum Power Dissipationb L = 0.1 mH TC = 25 °C TA = 25 °Cd Operating Junction and Storage Temperature Range ID 107a 350 IAR 60 PD V 110a IDM EAR Unit 180 250c 3.75 A mJ W TJ, Tstg - 55 to 175 °C Symbol Limit Unit RthJA 40 RthJC 0.6 THERMAL RESISTANCE RATINGS Parameter Junction-to-Ambient (PCB Mount)d Junction-to-Case °C/W Notes: a. Package limited. b. Duty cycle ≤ 1 %. c. See SOA curve for voltage derating. d. When mounted on 1" square PCB (FR-4 material). * Pb containing terminations are not RoHS compliant, exemptions may apply. Document Number: 72077 S-80108-Rev. E, 21-Jan-08 www.vishay.com 1 SUM110N04-04 Vishay Siliconix SPECIFICATIONS TJ = 25 °C, unless otherwise noted Parameter Symbol Test Conditions Min. V(BR)DSS VDS = 0 V, ID = 250 µA 40 VGS(th) VDS = VGS, ID = 250 µA 2 IGSS VDS = 0 V, VGS = 20 V Typ. Max. Unit Static Drain-Source Breakdown Voltage Gate Threshold Voltage Gate-Body Leakage Zero Gate Voltage Drain Current On-State Drain Currenta IDSS 100 VDS = 40 V, VGS = 0 V 1 VDS = 40 V, VGS = 0 V, TJ = 125 °C 50 VDS = 40 V, VGS = 0 V, TJ = 175 °C 250 VDS ≥ 5 V, VGS = 10 V ID(on) 120 VGS = 10 V, ID = 30 A Drain-Source On-State Resistancea 4 gfs VDS = 15 V, ID = 30 A µA 0.0035 0.0055 VGS = 10 V, ID = 30 A, TJ = 175 °C Forward Transconductancea nA A 0.0028 VGS = 10 V, ID = 30 A, TJ = 125 °C rDS(on) V Ω 0.006 30 S b Dynamic Input Capacitance Ciss Output Capacitance Coss Reverse Transfer Capacitance Crss Total Gate Chargec Qg Gate-Source Chargec Qgs c Gate-Drain Charge Qgd Turn-On Delay Timec td(on) Rise Timec Turn-Off Delay Timec Fall Timec tr td(off) 6800 VGS = 0 V, VDS = 25 V, f = 1 MHz pF 1110 690 140 VDS = 30 V, VGS = 10 V, ID = 110 A 200 nC 35 55 VDD = 30 V, RL = 0.47 Ω ID ≅ 110 A, VGEN = 10 V, Rg = 2.5 Ω tf 20 35 115 175 75 115 85 130 ns Source-Drain Diode Ratings and Characteristics TC = 25 °Cb IS 110 Pulsed Current ISM 350 Forward Voltagea VSD Continuous Current Reverse Recovery Time Peak Reverse Recovery Current Reverse Recovery Charge IF = 110 A, VGS = 0 V trr IRM(REC) Qrr IF = 110 A, di/dt = 100 A/µs A 1.1 1.4 V 50 80 ns 2 3 A 0.05 0.12 µC Notes: a. Pulse test; pulse width ≤ 300 µs, duty cycle ≤ 2 %. b. Guaranteed by design, not subject to production testing. c. Independent of operating temperature. Stresses beyond those listed under “Absolute Maximum Ratings” may cause permanent damage to the device. These are stress ratings only, and functional operation of the device at these or any other conditions beyond those indicated in the operational sections of the specifications is not implied. Exposure to absolute maximum rating conditions for extended periods may affect device reliability. www.vishay.com 2 Document Number: 72077 S-80108-Rev. E, 21-Jan-08 SUM110N04-04 Vishay Siliconix TYPICAL CHARACTERISTICS 25 °C, unless otherwise noted 250 250 VGS = 10 thru 7 V 200 I D - Drain Current (A) I D - Drain Current (A) 200 6V 150 100 50 100 TC = 125 °C 50 5V 4V 150 25 °C - 55 °C 0 0 0 2 4 6 8 0 10 1 2 3 4 5 6 VDS - Drain-to-Source Voltage (V) VGS - Gate-to-Source Voltage (V) Output Characteristics Transfer Characteristics 250 7 0.005 TC = - 55 °C r DS(on) - On-Resistance (Ω) g fs - Transconductance (S) 200 25 °C 150 125 °C 100 50 0 0.004 VGS = 10 V 0.003 0.002 0.001 0.000 0 15 30 45 60 75 90 0 20 40 ID - Drain Current (A) 80 100 120 ID - Drain Current (A) Transconductance On-Resistance vs. Drain Current 20 8000 VGS - Gate-to-Source Voltage (V) 10000 C - Capacitance (pF) 60 Ciss 6000 4000 Coss 2000 Crss 0 0 VDS = 30 V ID = 85 A 16 12 8 4 0 8 16 24 32 40 0 50 100 150 200 VDS - Drain-to-Source Voltage (V) Qg - Total Gate Charge (nC) Capacitance Gate Charge Document Number: 72077 S-80108-Rev. E, 21-Jan-08 250 www.vishay.com 3 SUM110N04-04 Vishay Siliconix TYPICAL CHARACTERISTICS 25 °C, unless otherwise noted 2.0 100 1.6 I S - Source Current (A) rDS(on) - On-Resistance (Normalized) VGS = 10 V ID = 30 A 1.2 0.8 0.4 0.0 - 50 - 25 0 25 50 75 100 125 150 TJ = 150 °C 10 TJ = 25 °C 1 0 175 0.3 TJ - Junction Temperature (°C) 100 52 V(BR)DSS (V) I Dav (A) 56 IAV (A) at TA = 25 °C 10 0.1 0.001 0.01 0.1 tin (s) Avalanche Current vs. Time www.vishay.com 4 ID = 1 mA 48 44 IAV (A) at TA = 150 °C 0.0001 1.2 Source-Drain Diode Forward Voltage 1000 0.00001 0.9 VSD - Source-to-Drain Voltage (V) On-Resistance vs. Junction Temperature 1 0.6 1 40 - 50 - 25 0 25 50 75 100 125 150 175 TJ - Junction Temperature (°C) Drain Source Breakdown vs. Junction Temperature Document Number: 72077 S-80108-Rev. E, 21-Jan-08 SUM110N04-04 Vishay Siliconix THERMAL RATINGS 1000 120 10 µs 100 100 µs I D - Drain Current (A) I D - Drain Current (A) 100 80 60 40 Limited by rDS(on)* 10 1 ms 10 ms 100 ms DC 1 TC = 25 °C Single Pulse 20 0.1 0 0 25 50 75 100 125 150 175 0.1 1 TC - Ambient Temperature (°C) * VGS Maximum Avalanche and Drain Current vs. Case Temperature 10 100 VDS - Drain-to-Source Voltage (V) minimum VGS at which rDS(on) is specified Safe Operating Area 2 Normalized Effective Transient Thermal Impedance 1 Duty Cycle = 0.5 0.2 0.1 0.1 0.05 0.02 Single Pulse 0.01 10- 4 10- 3 10- 2 10- 1 1 10 Square Wave Pulse Duration (s) Normalized Thermal Transient Impedance, Junction-to-Case Vishay Siliconix maintains worldwide manufacturing capability. Products may be manufactured at one of several qualified locations. Reliability data for Silicon Technology and Package Reliability represent a composite of all qualified locations. For related documents such as package/tape drawings, part marking, and reliability data, see http://www.vishay.com/ppg?72077. Document Number: 72077 S-80108-Rev. E, 21-Jan-08 www.vishay.com 5 Legal Disclaimer Notice www.vishay.com Vishay Disclaimer  ALL PRODUCT, PRODUCT SPECIFICATIONS AND DATA ARE SUBJECT TO CHANGE WITHOUT NOTICE TO IMPROVE RELIABILITY, FUNCTION OR DESIGN OR OTHERWISE. Vishay Intertechnology, Inc., its affiliates, agents, and employees, and all persons acting on its or their behalf (collectively, “Vishay”), disclaim any and all liability for any errors, inaccuracies or incompleteness contained in any datasheet or in any other disclosure relating to any product. Vishay makes no warranty, representation or guarantee regarding the suitability of the products for any particular purpose or the continuing production of any product. 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