SUM90140E-GE3

SUM90140E www.vishay.com Vishay Siliconix N-Channel 200 V (D-S) 175 °C MOSFET FEATURES PRODUCT SUMMARY VDS (V) 200 RDS(on) () MAX. ID (A) 0.017 at VGS = 10 V 90 0.018 at VGS = 7.5 V 88 Qg (TYP.) 64 nC • ThunderFET® power MOSFET • Maximum 175 °C junction temperature • 100 % Rg and UIS tested • Material categorization: for definitions of compliance please see www.vishay.com/doc?99912 TO-263 APPLICATIONS D • Power supplies: - Uninterruptible power supplies - AC/DC switch-mode power supplies - Lighting S Top View G • Synchronous rectification D G • DC/DC converter • Motor drive switch Ordering Information: SUM90140E-GE3 (lead (Pb)-free and halogen-free) S • DC/AC inverter • Solar micro inverter N-Channel MOSFET • Class D audio amplifier ABSOLUTE MAXIMUM RATINGS (TC = 25 °C, unless otherwise noted) PARAMETER SYMBOL LIMIT Drain-Source Voltage VDS 200 Gate-Source Voltage VGS ± 20 Continuous Drain Current (TJ = 150 °C) TC = 25 °C TC = 70 °C Pulsed Drain Current (t = 100 μs) ID IDM Avalanche Current L = 0.1 mH Single Avalanche Energy a TC = 25 °C Maximum Power Dissipation a TC = 125 °C Operating Junction and Storage Temperature Range V 90 75 240 IAS 60 EAS 180 PD UNIT 375 b 125 b A mJ W TJ, Tstg -55 to +175 °C SYMBOL LIMIT UNIT THERMAL RESISTANCE RATINGS PARAMETER Junction-to-Ambient (PCB Mount) c Junction-to-Case (Drain) RthJA 40 RthJC 0.4 °C/W Notes a. Duty cycle  1 %. b. See SOA curve for voltage derating. c. When mounted on 1" square PCB (FR4 material). S15-2641-Rev. A, 16-Nov-15 Document Number: 79035 1 For technical questions, contact: pmostechsupport@vishay.com THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000 SUM90140E www.vishay.com Vishay Siliconix SPECIFICATIONS (TJ = 25 °C, unless otherwise noted) PARAMETER SYMBOL TEST CONDITIONS MIN. TYP. MAX. UNIT VDS VGS = 0 V, ID = 250 μA 200 - - VGS(th) VDS = VGS, ID = 250 μA 2 - 4 IGSS VDS = 0 V, VGS = ± 20 V - - ± 250 VDS = 200 V, VGS = 0 V - - 1 VDS = 200 V, VGS = 0 V, TJ = 125 °C - - 150 VDS = 200 V, VGS = 0 V, TJ = 175 °C - - 5 mA VDS  10 V, VGS = 10 V 90 - - A Static Drain-Source Breakdown Voltage Gate Threshold Voltage Gate-Body Leakage Zero Gate Voltage Drain Current On-State Drain Current a Drain-Source On-State Resistance a Forward Transconductance a Dynamic IDSS ID(on) RDS(on) gfs VGS = 10 V, ID = 30 A - 0.0138 0.0170 VGS = 7.5 V, ID = 30 A - 0.0141 0.0180 VDS = 15 V, ID = 30 A - 75 - - 4132 - V nA μA  S b Input Capacitance Ciss Output Capacitance Coss - 246 - Reverse Transfer Capacitance Crss - 21 - Total Gate Charge c Qg - 64 96 Gate-Source Charge c Gate-Drain Charge c VDS = 100 V, VGS = 10 V, ID = 60 A - 16.7 - - 16.9 - f = 1 MHz 1.5 3 5 - 13 26 VDD = 100 V, RL = 1.66  ID  60 A, VGEN = 10 V, Rg = 1  - 112 200 - 35 70 - 80 150 Qgd Gate Resistance Turn-On Delay Time Qgs VGS = 0 V, VDS = 100 V, f = 1 MHz Rg c Rise Time c Turn-Off Delay Time c Fall Time c td(on) tr td(off) tf pF nC  ns Drain-Source Body Diode Ratings and Characteristics b (TC = 25 °C) Pulsed Current (t = 100 μs) ISM Forward Voltage a VSD Reverse Recovery Time Peak Reverse Recovery Charge Reverse Recovery Charge IF = 10 A, VGS = 0 V trr IRM(REC) Qrr IF = 30 A, di/dt = 100 A/μs - - 240 A - 0.8 1.2 V - 160 320 ns - 11 20 A - 0.9 1.8 μC Notes a. Pulse test; pulse width  300 μs, duty cycle  2 %. b. Guaranteed by design, not subject to production testing. c. Independent of operating temperature. Stresses beyond those listed under “Absolute Maximum Ratings” may cause permanent damage to the device. These are stress ratings only, and functional operation of the device at these or any other conditions beyond those indicated in the operational sections of the specifications is not implied. Exposure to absolute maximum rating conditions for extended periods may affect device reliability. S15-2641-Rev. A, 16-Nov-15 Document Number: 79035 2 For technical questions, contact: pmostechsupport@vishay.com THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000 SUM90140E www.vishay.com Vishay Siliconix TYPICAL CHARACTERISTICS (TA = 25 °C, unless otherwise noted) 150 150 VGS = 10 V thru 6 V 120 ID - Drain Current (A) ID - Drain Current (A) 120 90 60 VGS = 5 V 90 TC = 25 °C 60 TC = 125 °C 30 30 TC = - 55 °C VGS =4 V 0 0 0 2 4 6 8 10 0 VDS - Drain-to-Source Voltage (V) 2 Output Characteristics 8 10 0.017 80 0.016 RDS(on) - On-Resistance (Ω) TC = 25 °C 60 TC = - 55 °C 40 TC = 125 °C 20 0.015 VGS = 7.5 V 0.014 VGS = 10 V 0.013 0 0.012 0 6 12 18 24 30 0 20 40 60 80 ID - Drain Current (A) ID - Drain Current (A) Transconductance On-Resistance vs. Drain Current 7000 100 10 VGS - Gate-to-Source Voltage (V) ID = 60 A 5600 C - Capacitance (pF) 6 Transfer Characteristics 100 gfs - Transconductance (S) 4 VGS - Gate-to-Source Voltage (V) Ciss 4200 2800 Coss 1400 VDS = 100 V 8 VDS = 50 V 6 VDS = 150 V 4 2 Crss 0 0 0 20 40 60 80 VDS - Drain-to-Source Voltage (V) Capacitance S15-2641-Rev. A, 16-Nov-15 100 0 13 26 39 52 65 Qg - Total Gate Charge (nC) Gate Charge Document Number: 79035 3 For technical questions, contact: pmostechsupport@vishay.com THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000 SUM90140E www.vishay.com Vishay Siliconix TYPICAL CHARACTERISTICS (TA = 25 °C, unless otherwise noted) 3.6 3 RDS(on) - On-Resistance (Normalized) ID = 250 μA 3.2 2.5 VGS(th) (V) VGS= 10 V, ID = 30 A 2 1.5 2.8 2.4 VGS = 7.5 V, ID = 30 A 1 2 0.5 - 50 - 25 0 25 50 75 100 125 150 1.6 - 50 - 25 175 0 TJ - Junction Temperature (°C) On-Resistance vs. Junction Temperature 150 175 150 175 Threshold Voltage 260 0.05 ID = 250 μA VDS (V) Drain-to-Source Voltage ID = 30 A RDS(on) - On-Resistance (Ω) 25 50 75 100 125 TJ - Temperature (°C) 0.04 TJ = 125 °C 0.03 0.02 TJ = 25 °C 0.01 2 4 6 8 240 230 220 210 - 50 0 0 250 10 - 25 0 25 50 75 100 125 TJ - Temperature (°C) VGS - Gate-to-Source Voltage (V) On-Resistance vs. Gate-to-Source Voltage Drain Source Breakdown vs. Junction Temperature 100 100 10 ID - Drain Current (A) IS - Source Current (A) 80 TJ = 150 °C TJ = 25 °C 1 60 40 20 0.1 0.0 0 0.2 0.4 0.6 0.8 1.0 VSD - Source-to-Drain Voltage (V) Source Drain Diode Forward Voltage S15-2641-Rev. A, 16-Nov-15 1.2 0 25 50 75 100 125 TC - Case Temperature (°C) 150 175 Current De-rating Document Number: 79035 4 For technical questions, contact: pmostechsupport@vishay.com THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000 SUM90140E www.vishay.com Vishay Siliconix THERMAL RATINGS (TA = 25 °C, unless otherwise noted) 1000 100 IDM Limited ID Limited 100 μs 25 °C 10 Limited by RDS(on)* IDAV (A) ID - Drain Current (A) 100 1 10 150 °C 1 ms 10 ms 100 ms, DC 0.1 TC = 25 °C Single Pulse BVDSS Limited 0.01 0.1 1 0.00001 1 10 100 1000 VDS - Drain-to-Source Voltage (V) * VGS > minimum VGS at which RDS(on) is specified 0.0001 0.001 0.01 0.1 Time (s) Safe Operating Area Single Pulse Avalanche Current Capability vs. Time Normalized Effective Transient Thermal Impedance 1 0.1 0.01 0.001 0.0001 10-4 10-3 10-2 10-1 1 10 100 1000 Square Wave Pulse Duration (s) Normalized Thermal Transient Impedance, Junction-to-Ambient S15-2641-Rev. A, 16-Nov-15 Document Number: 79035 5 For technical questions, contact: pmostechsupport@vishay.com THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000 SUM90140E www.vishay.com Vishay Siliconix THERMAL RATINGS (TA = 25 °C, unless otherwise noted) 1 Normalized Effective Transient Thermal Impedance Duty Cycle = 0.5 0.2 0.1 0.1 0.05 0.02 Single Pulse 0.01 0.0001 0.001 0.01 0.1 1 Square Wave Pulse Duration (s) Normalized Thermal Transient Impedance, Junction-to-Case Note • The characteristics shown in the two graphs - Normalized Transient Thermal Impedance Junction to Ambient (25 °C) - Normalized Transient Thermal Impedance Junction to Case (25 °C) are given for general guidelines only to enable the user to get a “ball park” indication of part capabilities. The data are extracted from single pulse transient thermal impedance characteristics which are developed from empirical measurements. The latter is valid for the part mounted on printed circuit board - FR4, size 1" x 1" x 0.062", double sided with 2 oz. copper, 100 % on both sides. The part capabilities can widely vary depending on actual application parameters and operating conditions. Vishay Siliconix maintains worldwide manufacturing capability. Products may be manufactured at one of several qualified locations. Reliability data for Silicon Technology and Package Reliability represent a composite of all qualified locations. For related documents such as package/tape drawings, part marking, and reliability data, see www.vishay.com/ppg?79035. S15-2641-Rev. A, 16-Nov-15 Document Number: 79035 6 For technical questions, contact: pmostechsupport@vishay.com THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000 Package Information www.vishay.com Vishay Siliconix TO-263 (D2PAK): 3-LEAD -B- L2 6 E1 K D4 -A- c2 D2 D3 A E L3 L D D1 E3 A A b2 b e c Detail “A” E2 0.010 M A M 2 PL 0° L4 -5 ° INCHES L1 DETAIL A (ROTATED 90°) c* c c1 c1 M b b1 SECTION A-A MIN. MAX. MIN. MAX. A 0.160 0.190 4.064 4.826 b 0.020 0.039 0.508 0.990 b1 0.020 0.035 0.508 0.889 1.397 b2 0.045 0.055 1.143 Thin lead 0.013 0.018 0.330 0.457 Thick lead 0.023 0.028 0.584 0.711 Thin lead 0.013 0.017 0.330 0.431 Thick lead 0.023 0.027 0.584 0.685 c2 0.045 0.055 1.143 1.397 D 0.340 0.380 8.636 9.652 D1 0.220 0.240 5.588 6.096 D2 0.038 0.042 0.965 1.067 D3 0.045 0.055 1.143 1.397 D4 0.044 0.052 1.118 1.321 E 0.380 0.410 9.652 10.414 E1 0.245 - 6.223 - E2 0.355 0.375 9.017 9.525 E3 0.072 0.078 1.829 1.981 e Notes 1. Plane B includes maximum features of heat sink tab and plastic. 2. No more than 25 % of L1 can fall above seating plane by max. 8 mils. 3. Pin-to-pin coplanarity max. 4 mils. 4. *: Thin lead is for SUB, SYB. Thick lead is for SUM, SYM, SQM. 5. Use inches as the primary measurement. 6. This feature is for thick lead. Revison: 30-Sep-13 MILLIMETERS DIM. 0.100 BSC 2.54 BSC K 0.045 0.055 1.143 1.397 L 0.575 0.625 14.605 15.875 L1 0.090 0.110 2.286 2.794 L2 0.040 0.055 1.016 1.397 L3 0.050 0.070 1.270 1.778 L4 M 0.010 BSC - 0.254 BSC 0.002 - 0.050 ECN: T13-0707-Rev. K, 30-Sep-13 DWG: 5843 1 Document Number: 71198 THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000 AN826 Vishay Siliconix RECOMMENDED MINIMUM PADS FOR D2PAK: 3-Lead 0.420 0.355 0.635 (16.129) (9.017) (10.668) 0.145 (3.683) 0.135 (3.429) 0.200 0.050 (5.080) (1.257) Recommended Minimum Pads Dimensions in Inches/(mm) Return to Index Document Number: 73397 11-Apr-05 www.vishay.com 1 Legal Disclaimer Notice www.vishay.com Vishay Disclaimer ALL PRODUCT, PRODUCT SPECIFICATIONS AND DATA ARE SUBJECT TO CHANGE WITHOUT NOTICE TO IMPROVE RELIABILITY, FUNCTION OR DESIGN OR OTHERWISE. Vishay Intertechnology, Inc., its affiliates, agents, and employees, and all persons acting on its or their behalf (collectively, “Vishay”), disclaim any and all liability for any errors, inaccuracies or incompleteness contained in any datasheet or in any other disclosure relating to any product. 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ALL RIGHTS RESERVED Revision: 01-Jan-2022 1 Document Number: 91000