SUP60N10-16L-E3

SUP60N10-16L Vishay Siliconix N-Channel 100-V (D-S) 175_C MOSFET FEATURES PRODUCT SUMMARY V(BR)DSS (V) 100 rDS(on) (W) ID (A) 0.016 @ VGS = 10 V 60 0.018 @ VGS = 4.5 V 56 D TrenchFETr Power MOSFET D 175_C Junction Temperature D PWM Optimized APPLICATIONS D DC/DC Primary Side Switch D TO-220AB G DRAIN connected to TAB G D S S Top View SUP60N10-16L N-Channel MOSFET ABSOLUTE MAXIMUM RATINGS (TC = 25_C UNLESS OTHERWISE NOTED) Parameter Symbol Limit Drain-Source Voltage VDS 100 Gate-Source Voltage VGS "20 Continuous Drain Current (TJ = 175_C) TC = 25_C TC = 125_C Pulsed Drain Current Avalanche Current Unit V 60 ID 35 IDM 100 IAR 40 A Repetitive Avalanche Energya L = 0.1 mH EAR 80 Maximum Power Dissipationa TC = 25_C PD 150b W TJ, Tstg - 55 to 175 _C Symbol Limit Unit Junction-to-Ambient (Free Air) RthJA 62.5 Junction-to-Case RthJC 1.0 Operating Junction and Storage Temperature Range mJ THERMAL RESISTANCE RATINGS Parameter _C/W Notes a. Duty cycle v 1%. b. See SOA curve for voltage derating. c. When mounted on 1” square PCB (FR-4 material). Document Number: 71928 S-03600—Rev. B, 31-Mar-03 www.vishay.com 1 SUP60N10-16L Vishay Siliconix SPECIFICATIONS (TJ =25_C UNLESS OTHERWISE NOTED) Parameter Symbol Test Condition Min Typ Max V(BR)DSS VGS = 0 V, ID = 250 mA 100 VGS(th) VDS = VGS, ID = 250 mA 1 IGSS VDS = 0 V, VGS = "20 V "100 VDS = 80 V, VGS = 0 V 1 Unit Static Drain-Source Breakdown Voltage Gate-Threshold Voltage Gate-Body Leakage Zero Gate Voltage g Drain Current On-State Drain Currenta Drain-Source On-State Resistancea IDSS ID(on) rDS(on) V 3 VDS = 80 V, VGS = 0 V, TJ = 125_C 50 VDS = 80 V, VGS = 0 V, TJ = 175_C 250 VDS w 5 V, VGS = 10 V 100 VGS = 10 V, ID = 30 A 0.0125 0.016 VGS = 4.5 V, ID = 20 A 0.014 0.018 VDS = 15 V, ID = 30 A W 0.030 VGS = 10 V, ID = 30 A, TJ = 175_C gfs mA m A VGS = 10 V, ID = 30 A, TJ = 125_C Forward Transconductancea nA 0.040 25 S Dynamicb Input Capacitance Ciss Output Capacitance Coss Reverse Transfer Capacitance Crss 210 Total Gate Chargec Qg 73 Gate-Source Chargec Qgs 15 Gate-Drain Chargec Qgd 20 Gate Resistance RG 1.5 td(on) 12 25 90 135 55 85 130 195 Turn-On Delay Timec Rise Timec Turn-Off Delay Timec Fall Timec tr td(off) 3820 VGS = 0 V, VDS = 25 V, f = 1 MHz VDS = 50 V,, VGS = 10 V,, ID = 60 A VDD = 50 V, RL = 0.83 W ID ^ 60 A, VGEN = 10 V, RG = 2.5 W tf 450 pF 110 nC W ns Source-Drain Diode Ratings and Characteristics (TC = 25_C)b Continuous Current IS 60 Pulsed Current ISM 100 Forward Voltagea VSD Reverse Recovery Time Peak Reverse Recovery Current Reverse Recovery Charge IF = 60 A, VGS = 0 V trr IRM(REC) Qrr IF = 50 A,, di/dt = 100 A/ms m A 1.0 1.5 V 62 100 ns 3.1 5 A 0.10 0.25 mC Notes a. Pulse test; pulse width v 300 ms, duty cycle v 2%. b. Guaranteed by design, not subject to production testing. c. Independent of operating temperature. www.vishay.com 2 Document Number: 71928 S-03600—Rev. B, 31-Mar-03 SUP60N10-16L Vishay Siliconix TYPICAL CHARACTERISTICS (25_C UNLESS NOTED) Output Characteristics Transfer Characteristics 120 120 VGS = 10 thru 6 V 5V I D - Drain Current (A) I D - Drain Current (A) 100 90 60 30 80 60 40 TC = 125_C 20 4V 25_C 3V - 55_C 0 0 2 4 6 8 0 0.0 10 0.5 VDS - Drain-to-Source Voltage (V) 1.0 1.5 2.0 2.5 3.0 3.5 4.0 4.5 VGS - Gate-to-Source Voltage (V) Transconductance On-Resistance vs. Drain Current 0.030 160 r DS(on) - On-Resistance ( W ) g fs - Transconductance (S) TC = - 55_C 25_C 120 125_C 80 40 0 0.025 0.020 VGS = 4.5 V 0.015 VGS = 10 V 0.010 0.005 0.000 0 10 20 30 40 50 60 70 80 90 0 20 40 ID - Drain Current (A) 80 100 ID - Drain Current (A) Capacitance Gate Charge 6000 10 V GS - Gate-to-Source Voltage (V) 5000 C - Capacitance (pF) 60 Ciss 4000 3000 2000 1000 Crss Coss 0 VDS = 50 V ID = 60 A 8 6 4 2 0 0 20 40 60 80 VDS - Drain-to-Source Voltage (V) Document Number: 71928 S-03600—Rev. B, 31-Mar-03 100 0 10 20 30 40 50 60 70 80 Qg - Total Gate Charge (nC) www.vishay.com 3 SUP60N10-16L Vishay Siliconix TYPICAL CHARACTERISTICS (25_C UNLESS NOTED) On-Resistance vs. Junction Temperature Source-Drain Diode Forward Voltage 2.5 100 2.0 I S - Source Current (A) r DS(on) - On-Resistance (W) (Normalized) VGS = 10 V ID = 30 A 1.5 1.0 TJ = 25_C TJ = 150_C 10 0.5 0.0 - 50 - 25 0 25 50 75 100 125 150 1 0 175 0.3 TJ - Junction Temperature (_C) 0.6 0.9 1.2 VSD - Source-to-Drain Voltage (V) Drain Source Breakdown vs. Junction Temperature 130 125 V(BR)DSS (V) ID = 10 mA 120 115 110 105 100 95 - 50 - 25 0 25 50 75 100 125 150 175 TJ - Junction Temperature (_C) www.vishay.com 4 Document Number: 71928 S-03600—Rev. B, 31-Mar-03 SUP60N10-16L Vishay Siliconix THERMAL RATINGS Maximum Avalanche and Drain Current vs. Case Temperature Safe Operating Area 1000 80 70 100 I D - Drain Current (A) I D - Drain Current (A) 60 50 40 30 20 100 ms 10 Limited by rDS(on) 1 ms 10 ms 100 ms dc 1 10 0 10 ms TC = 25_C Single Pulse 0.1 0 25 50 75 100 125 150 175 0.1 1 10 100 1000 VDS - Drain-to-Source Voltage (V) TC - Ambient Temperature (_C) Normalized Thermal Transient Impedance, Junction-to-Case 2 Normalized Effective Transient Thermal Impedance 1 Duty Cycle = 0.5 0.2 0.1 0.1 0.05 0.02 Single Pulse 0.01 10 -4 10 -3 10 -2 10 -1 1 10 Square Wave Pulse Duration (sec) Document Number: 71928 S-03600—Rev. B, 31-Mar-03 www.vishay.com 5 Legal Disclaimer Notice Vishay Disclaimer All product specifications and data are subject to change without notice. Vishay Intertechnology, Inc., its affiliates, agents, and employees, and all persons acting on its or their behalf (collectively, “Vishay”), disclaim any and all liability for any errors, inaccuracies or incompleteness contained herein or in any other disclosure relating to any product. Vishay disclaims any and all liability arising out of the use or application of any product described herein or of any information provided herein to the maximum extent permitted by law. The product specifications do not expand or otherwise modify Vishay’s terms and conditions of purchase, including but not limited to the warranty expressed therein, which apply to these products. No license, express or implied, by estoppel or otherwise, to any intellectual property rights is granted by this document or by any conduct of Vishay. The products shown herein are not designed for use in medical, life-saving, or life-sustaining applications unless otherwise expressly indicated. Customers using or selling Vishay products not expressly indicated for use in such applications do so entirely at their own risk and agree to fully indemnify Vishay for any damages arising or resulting from such use or sale. Please contact authorized Vishay personnel to obtain written terms and conditions regarding products designed for such applications. Product names and markings noted herein may be trademarks of their respective owners. Document Number: 91000 Revision: 18-Jul-08 www.vishay.com 1