TCET1108

TCET1100, TCET1100G www.vishay.com Vishay Semiconductors Optocoupler, Phototransistor Output, High Temperature FEATURES • High common mode rejection C E 4 3 • Low temperature coefficient of CTR • CTR offered in 7 groups • Reinforced isolation provides circuit protection against electrical shock (safety class II) 1 2 A C • Isolation materials according to UL 94 V-0 • Pollution degree 2 (DIN / VDE 0110 / resp. IEC 60664) • Climatic classification 55 / 100 / 21 (IEC 60068 part 1) • Rated impulse VIOTM = 6 kVpeak 17197_4 voltage (transient overvoltage) • Isolation test voltage (partial discharge test voltage) Vpd = 1.6 kV LINKS TO ADDITIONAL RESOURCES • Rated isolation VIOWM = 600 VRMS Related Documents • Rated recurring VIORM = 848 Vpeak DESCRIPTION voltage peak (RMS includes voltage DC) (repetitive) • Creepage current resistance according to VDE 0303 / IEC 60112 comparative tracking index: CTI ≥ 175 The TCET110. consists of a phototransistor optically coupled to a gallium arsenide infrared-emitting diode in a 4-lead plastic dual inline package. • Material categorization: for definitions of compliance please see www.vishay.com/doc?99912 AGENCY APPROVALS • UL 1577 APPLICATIONS • cUL 1577 Circuits for safe protective separation against electrical shock according to safety class II (reinforced isolation): • DIN EN 60747-5-5 (VDE 0884-5) • For application class I to IV at mains voltage ≤ 300 V • BSI: EN 62368-1:2014 • For application class I to III at mains voltage ≤ 600 V according to DIN EN 60747-5-5 (VDE 0884), suitable for: • CQC GB4943.1-2011 • CQC GB8898-2011 - Switch-mode power supplies - Line receiver - Computer peripheral interface - Microprocessor system interface ORDERING INFORMATION DIP T C E T 1 1 0 # PART NUMBER LEAD FORM AGENCY CERTIFIED / PACKAGE UL, cUL, VDE, BSI, CQC DIP-4 DIP-4, 400 mil # 7.62 mm CTR (%) 10 mA 50 to 600 40 to 80 63 to 125 100 to 200 160 to 320 100 to 300 80 to 160 130 to 260 200 to 400 TCET1100 - TCET1102 TCET1103 - TCET1106 TCET1107 TCET1108 TCET1109 TCET1100G TCET1101G TCET1102G TCET1103G TCET1104G TCET1106G TCET1107G TCET1108G TCET1109G Note • G = lead form 10.16 mm; G is not marked on the body Document Number: 83503 1 For technical questions, contact: optocoupleranswers@vishay.com THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000 Rev. 2.4, 13-Jan-2021 TCET1100, TCET1100G www.vishay.com Vishay Semiconductors ABSOLUTE MAXIMUM RATINGS (Tamb = 25 °C, unless otherwise specified) PARAMETER TEST CONDITION SYMBOL VALUE UNIT INPUT Reverse voltage VR 6 V Forward current IF 60 mA IFSM 1.5 A Collector emitter voltage VCEO 70 V Emitter collector voltage VECO 7 V tp ≤ 10 μs Forward surge current OUTPUT Collector current tp/T = 0.5, tp ≤ 10 ms Collector peak current IC 50 mA ICM 100 mA COUPLER Isolation test voltage (RMS) VISO 5000 VRMS Operating ambient temperature range t = 1 min Tamb -40 to +100 °C Storage temperature range Tstg -55 to +125 °C Tsld 260 °C 2 mm from case, ≤ 10 s Soldering temperature (1) Notes • Stresses in excess of the absolute maximum ratings can cause permanent damage to the device. Functional operation of the device is not implied at these or any other conditions in excess of those given in the operational sections of this document. Exposure to absolute maximum ratings for extended periods of the time can adversely affect reliability (1) Refer to wave profile for soldering conditions for through hole devices THERMAL CHARACTERISTICS PARAMETER SYMBOL VALUE UNIT LED power dissipation Pdiss 100 mW Output power dissipation Pdiss 150 mW Maximum LED junction temperature Tjmax. 125 °C Maximum output die junction temperature Tjmax. 125 °C Thermal resistance, junction emitter to board θEB 173 °C/W Thermal resistance, junction emitter to case θEC 149 °C/W Thermal resistance, junction detector to board θDB 111 °C/W Thermal resistance, junction detector to case θDC 127 °C/W Thermal resistance, junction emitter to junction detector θED 173 °C/W Thermal resistance, board to ambient (1) θBA 197 °C/W TA θCA Package TC θEC θDC θDE TJD TJE θDB θEB TB θBA 19996 Thermal resistance, case to ambient (1) θCA 4041 °C/W TA Notes • The thermal model is represented in the thermal network below. Each resistance value given in this model can be used to calculate the temperatures at each node for a given operating condition. The thermal resistance from board to ambient will be dependent on the type of PCB, layout and thickness of copper traces. For a detailed explanation of the thermal model, please reference Vishay’s “Thermal Characteristics of Optocouplers” application note (1) For 2 layer FR4 board (4" x 3" x 0.062") Document Number: 83503 2 For technical questions, contact: optocoupleranswers@vishay.com THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000 Rev. 2.4, 13-Jan-2021 TCET1100, TCET1100G www.vishay.com Vishay Semiconductors ELECTRICAL CHARACTERISTICS (Tamb = 25 °C, unless otherwise specified) PARAMETER TEST CONDITION SYMBOL MIN. TYP. MAX. UNIT INPUT Forward voltage IF = 50 mA VF - 1.25 1.6 V VR = 0, f = 1 MHz Cj - 50 - pF Collector emitter voltage IC = 1 mA VCEO 70 - - V Emitter collector voltage IE = 100 μA VECO 7 - - V VCE = 20 V, IF = 0 A, E = 0 ICEO - 10 100 nA IF = 10 mA, IC = 1 mA VCEsat - - 0.3 V VCE = 5 V, IF = 10 mA, RL = 100 Ω fc - 110 - kHz f = 1 MHz Ck - 0.3 - pF Junction capacitance OUTPUT Collector emitter cut-off current COUPLER Collector emitter saturation voltage Cut-off frequency Coupling capacitance Note • Minimum and maximum values are testing requirements. Typical values are characteristics of the device and are the result of engineering evaluation. Typical values are for information only and are not part of the testing requirements CURRENT TRANSFER RATIO PARAMETER TEST CONDITION VCE = 5 V, IF = 1 mA VCE = 5 V, IF = 5 mA IC/IF VCE = 5 V, IF = 10 mA PART SYMBOL MIN. TYP. MAX. UNIT TCET1101G CTR 13 30 - % TCET1102, TCET1102G CTR 22 45 - % TCET1103, TCET1103G CTR 34 70 - % TCET1104G CTR 56 90 - % TCET1100, TCET1100G CTR 50 - 600 % TCET1106, TCET1106G CTR 100 - 300 % TCET1107, TCET1107G CTR 80 - 160 % TCET1108, TCET1108G CTR 130 - 260 % TCET1109, TCET1109G CTR 200 - 400 % TCET1101, TCET1101G CTR 40 - 80 % TCET1102, TCET1102G CTR 63 - 125 % TCET1103, TCET1103G CTR 100 - 200 % TCET1104, TCET1104G CTR 160 - 320 % Document Number: 83503 3 For technical questions, contact: optocoupleranswers@vishay.com THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000 Rev. 2.4, 13-Jan-2021 TCET1100, TCET1100G www.vishay.com Vishay Semiconductors MAXIMUM SAFETY RATINGS PARAMETER TEST CONDITION SYMBOL MIN. TYP. MAX. UNIT IF - - 130 mA Pdiss - - 265 mW VIOTM - - 6 kV Tsi - - 150 °C INPUT Forward current OUTPUT Power dissipation COUPLER Rated impulse voltage Safety temperature Note • According to DIN EN 60747-5-5 (see figure 2). This optocoupler is suitable for safe electrical isolation only within the safety ratings. Compliance with the safety ratings shall be ensured by means of suitable protective circuits INSULATION RATED PARAMETERS PARAMETER TEST CONDITION SYMBOL MIN. TYP. MAX. UNIT Partial discharge test voltage routine test 100 %, ttest = 1 s Vpd 1.6 - - kV Partial discharge test voltage lot test (sample test) tTr = 60 s, ttest = 10 s, (see figure 2) VIOTM 6 - - kV Vpd 1.3 - - kV VIO = 500 V RIO 1012 - - Ω VIO = 500 V, Tamb = 100 °C RIO 1011 - - Ω VIO = 500 V, Tamb = 150 °C (construction test only) RIO 109 - - Ω Ptot - Total Power Dissipation (mW) Insulation resistance VIOTM 300 t1, t2 t3 , t4 ttest tstres Phototransistor Psi (mW) 250 200 = 1 s to 10 s =1s = 10 s = 12 s Vpd 150 VIOWM VIORM 100 IR-diode Isi (mA) 50 0 0 0 25 50 75 100 125 Tsi - Safety Temperature (°C) 949182-1 Fig. 1 - Derating Diagram 150 13930 t3 ttest t4 t1 tTr = 60 s t2 t stres t Fig. 2 - Test Pulse Diagram for Sample Test According to DIN EN 60747-5-5 / DIN EN 60747-; IEC 60747 Document Number: 83503 4 For technical questions, contact: optocoupleranswers@vishay.com THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000 Rev. 2.4, 13-Jan-2021 TCET1100, TCET1100G www.vishay.com Vishay Semiconductors SWITCHING CHARACTERISTICS PARAMETER TEST CONDITION SYMBOL MIN. TYP. MAX. UNIT Delay time VS = 5 V, IC = 2 mA, RL = 100 Ω, (see Fig. 3) td - 3 - μs Rise time VS = 5 V, IC = 2 mA, RL = 100 Ω, (see Fig. 3) tr - 3 - μs Turn-on time VS = 5 V, IC = 2 mA, RL = 100 Ω, (see Fig. 3) ton - 6 - μs Storage time VS = 5 V, IC = 2 mA, RL = 100 Ω, (see Fig. 3) ts - 0.3 - μs Fall time VS = 5 V, IC = 2 mA, RL = 100 Ω, (see Fig. 3) tf - 4.7 - μs Turn-off time VS = 5 V, IC = 2 mA, RL = 100 Ω, (see Fig. 3) toff - 5 - μs Turn-on time VS = 5 V, IF = 10 mA, RL = 1 kΩ, (see Fig. 4) ton - 9 - μs Turn-off time VS = 5 V, IF = 10 mA, RL = 1 kΩ, (see Fig. 4) toff - 10 - μs IF IF +5V IF 0 I C = 2 mA; adjusted through input amplitude tp t 100 % 90 % R G = 50 Ω tp = 0.01 T t p = 50 µs Channel I Channel II 50 Ω Oscilloscope R L = 1 MΩ C L = 20 pF 100 Ω 10 % 0 tr td t on tp td tr t on (= td + tr) 95 10804 Fig. 3 - Test Circuit, Non-Saturated Operation IF 0 IC Pulse duration Delay time Rise time Turn-on time ts tf t off ts tf t off (= ts + tf) t Storage time Fall time Turn-off time 96 11698 Fig. 5 - Switching Times +5V I F = 10 mA 0 IC R G = 50 Ω tp = 0.01 T t p = 50 µs Channel I Channel II 50 Ω Oscilloscope R L ≥ 1 MΩ C L ≤ 20 pF 1 kΩ 95 10843 Fig. 4 - Test Circuit, Saturated Operation Document Number: 83503 5 For technical questions, contact: optocoupleranswers@vishay.com THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000 Rev. 2.4, 13-Jan-2021 TCET1100, TCET1100G www.vishay.com Vishay Semiconductors Ptot - Total Power Dissipation (mW) TYPICAL CHARACTERISTICS (Tamb = 25 °C, unless otherwise specified) 10 000 ICEO - Collector Dark Current, with Open Base (nA) 300 Coupled device 250 200 Phototransistor 150 IR-diode 100 50 1000 100 10 1 0 0 40 80 96 11700 0 120 Tamb - Ambient Temperature (°C) 100 75 100 VCE = 5 V IC - Collector Current (mA) IF - Forward Current (mA) 50 Fig. 9 - Collector Dark Current vs. Ambient Temperature 1000 100 10 1 10 1 0.1 0.01 0.1 0.1 0 0.4 0.8 2.0 1.6 1.2 VF - Forward Voltage (V) 96 11862 1 100 10 IF - Forward Current (mA) 95 11027 Fig. 7 - Forward Current vs. Forward Voltage Fig. 10 - Collector Current vs. Forward Current 100 2.0 VCE = 5 V IF = 5 mA 1.5 1.0 0.5 IC - Collector Current (mA) CTRrel - Relative Current Transfer Ratio 25 Tamb - Ambient Temperature (°C) 95 11026 Fig. 6 - Total Power Dissipation vs. Ambient Temperature 20 mA IF = 50 mA 10 mA 10 5 mA 2 mA 1 1 mA 0.1 0 -25 95 11025 VCE = 20 V IF = 0 0 25 50 Tamb - Ambient Temperature (°C) Fig. 8 - Relative Current Transfer Ratio vs. Ambient Temperature 75 0.1 95 10985 1 10 100 VCE - Collector Emitter Voltage (V) Fig. 11 - Collector Current vs. Collector Emitter Voltage Document Number: 83503 6 For technical questions, contact: optocoupleranswers@vishay.com THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000 Rev. 2.4, 13-Jan-2021 TCET1100, TCET1100G www.vishay.com Vishay Semiconductors 0.8 CTR = 50 % used 0.6 0.4 0.2 10 % used 0 IC - Collector Current (mA) CTR - Current Transfer Ratio (%) 1000 VCE = 5 V 100 10 1 0.1 95 11029 1 10 ton toff 4 2 0 0 100 IF - Forward Current (mA) Fig. 13 - Current Transfer Ratio vs. Forward Current 2 4 6 8 IC - Collector Current (mA) 95 11030 Fig. 12 - Collector Emitter Saturation Voltage vs. Collector Current Non-saturated operation VS = 5 V RL = 100 Ω 6 100 10 95 11028 8 Fig. 14 - Turn-On / Off Time vs. Collector Current ton/toff - Turn-On / Turn-Off Time (µs) VCEsat - Collector Emitter Saturation Voltage (V) 20 % used 1 10 ton/toff - Turn-On/Turn-Off Time (µs) 1.0 50 Saturated operation VS = 5 V RL = 1 kΩ 40 30 toff 20 10 ton 0 0 95 11031 5 10 15 20 IF - Forward Current (mA) Fig. 15 - Turn-On / Off Time vs. Forward Current Document Number: 83503 7 For technical questions, contact: optocoupleranswers@vishay.com THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000 Rev. 2.4, 13-Jan-2021 TCET1100, TCET1100G www.vishay.com Vishay Semiconductors PACKAGE DIMENSIONS in millimeters 6.5 ± 0.3 Pin 1 identifier 7.62 to 10.3 4.58 ± 0.3 7.62 typ. 0.4 ± 0.15 3.5 ± 0.3 4.5 ± 0.3 2.75 ± 0.15 0° to 15° 1.2 ± 0.1 0.25 typ. 0.5 ± 0.1 2.54 typ. i178027-4 TCET1100G type 7.62 typ. 3.5 ± 0.3 0.1 min. 2.55 ± 0.25 20802-3 10.16 typ. PACKAGE MARKING ET1100 V YWW 24 21764-3 Document Number: 83503 8 For technical questions, contact: optocoupleranswers@vishay.com THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000 Rev. 2.4, 13-Jan-2021 Legal Disclaimer Notice www.vishay.com Vishay Disclaimer ALL PRODUCT, PRODUCT SPECIFICATIONS AND DATA ARE SUBJECT TO CHANGE WITHOUT NOTICE TO IMPROVE RELIABILITY, FUNCTION OR DESIGN OR OTHERWISE. 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