TPSMP24AHM3_A/H

TPSMP6.8A thru TPSMP43A www.vishay.com Vishay General Semiconductor High Power Density Surface Mount PAR® Transient Voltage Suppressors FEATURES eSMP ® Series • Junction passivation optimized design passivated anisotropic rectifier technology • TJ = 185 °C capability suitable for high reliability and automotive requirement • Very low profile - typical height of 1.0 mm • Ideal for automated placement • Unidirection only SMP (DO-220AA) Anode • Excellent clamping capability • Low incremental surge resistance Cathode • Very fast response time LINKS TO ADDITIONAL RESOURCES 3D 3D • Meets MSL level 1, per J-STD-020, LF maximum peak of 260 °C • AEC-Q101 qualified 3D Models • Material categorization: for definitions of compliance please see www.vishay.com/doc?99912 PRIMARY CHARACTERISTICS TYPICAL APPLICATIONS VBR 6.8 V to 43 V VWM 5.8 V to 36.8 V PPPM (for VBR 6.8 V) 250 W PPPM (for VBR 7.5 V to 12 V) 300 W PPPM (for VBR 13 V to 43 V) 400 W PD 2.5 W IFSM 40 A TJ max. 185 °C Polarity Unidirectional Package SMP (DO-220AA) Protection for ICs, drive transistors, signal lines of sensor units, and electronic units in consumer, computer, industrial, and automotive applications. MECHANICAL DATA Case: SMP (DO-220AA) Molding compound meets UL 94 V-0 flammability rating Base P/NHM3_X - halogen-free, RoHS-compliant and AEC-Q101 qualified (“X” denotes revision code e.g. A, B, ...) Terminals: matte tin plated leads, solderable J-STD-002 and JESD 22-B102 HM3 suffix meets JESD 201 class 2 whisker test per Polarity: color band denotes cathode end MAXIMUM RATINGS (TA = 25 °C, unless otherwise noted) PARAMETER SYMBOL VALUE UNIT Peak power dissipation with a 10/1000 μs waveform (fig. 1 and 3) (1)(2) PPPM See table next page W Peak power pulse current with a 10/1000 μs waveform (fig. 1) (1) IPPM See table next page A PD 2.5 W IFSM 40 A Power dissipation on infinite heatsink, TA = 75 °C Peak forward surge current 10 ms single half sine-wave superimposed on rated load Maximum instantaneous forward voltage at 25 A (3) Operating junction and storage temperature range VF 2.5 V TJ, TSTG -65 to +185 °C Notes (1) Non-repetitive current pulse, per fig. 3 and derated above T = 25 °C per fig. 2 A (2) Mounted on PCB with 5.0 mm x 5.0 mm copper pads attached to each terminal (3) Pulse test: 300 μs pulse width, 1 % duty cycle Revision: 25-Apr-2022 Document Number: 88471 1 For technical questions within your region: DiodesAmericas@vishay.com, DiodesAsia@vishay.com, DiodesEurope@vishay.com THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000 TPSMP6.8A thru TPSMP43A www.vishay.com Vishay General Semiconductor ELECTRICAL CHARACTERISTICS (TA = 25 °C, unless otherwise noted) DEVICE TYPE MAXIMUM MAXIMUM MAXIMUM MAXIMUM MAXIMUM REVERSE PEAK BREAKDOWN DEVICE CLAMPING TEMPERATURE TEST STAND-OFF REVERSE LEAKAGE PULSE VOLTAGE MARKING VOLTAGE COEFFICIENT CURRENT VOLTAGE LEAKAGE AT VWM SURGE VBR (1) AT IT AT VWM OF VBR AT IPPM IT (mA) VWM (V) CODE CURRENT T = 150 °C J (V) IR (μA) VC (V) (%/°C) (2) IPPM (A) ID (μA) MIN. MAX. TPSMP6.8A AEP 6.45 7.14 10.0 5.80 300 1000 23.8 10.5 0.057 TPSMP7.5A AGP 7.13 7.88 10.0 TPSMP8.2A AKP 7.79 8.61 10.0 6.40 150 500 26.5 11.3 0.061 7.02 50.0 200 24.8 12.1 0.065 TPSMP9.1A AMP 8.65 9.55 1.0 7.78 10.0 50.0 22.4 13.4 0.068 TPSMP10A APP 9.50 10.5 1.0 8.55 5.0 20.0 20.7 14.5 0.073 TPSMP11A ARP 10.5 11.6 1.0 9.40 2.0 10.0 19.2 15.6 0.075 TPSMP12A ATP 11.4 12.6 1.0 10.2 1.0 5.0 18.0 16.7 0.078 TPSMP13A AVP 12.4 13.7 1.0 11.1 1.0 5.0 22.0 18.2 0.081 TPSMP15A AXP 14.3 15.8 1.0 12.8 1.0 5.0 18.9 21.2 0.084 TPSMP16A AZP 15.2 16.8 1.0 13.6 1.0 5.0 17.8 22.5 0.086 TPSMP18A BEP 17.1 18.9 1.0 15.3 1.0 5.0 15.9 25.5 0.088 TPSMP20A BGP 19.0 21.0 1.0 17.1 1.0 5.0 14.4 27.7 0.090 TPSMP22A BKP 20.9 23.1 1.0 18.8 1.0 5.0 13.1 30.6 0.092 TPSMP24A BMP 22.8 25.2 1.0 20.5 1.0 5.0 12.0 33.2 0.094 TPSMP27A BPP 25.7 28.4 1.0 23.1 1.0 5.0 10.7 37.5 0.096 TPSMP30A BRP 28.5 31.5 1.0 25.6 1.0 5.0 9.7 41.4 0.097 TPSMP33A BTP 31.4 34.7 1.0 28.2 1.0 5.0 8.8 45.7 0.098 TPSMP36A BVP 34.2 37.8 1.0 30.8 1.0 5.0 8.0 49.9 0.099 TPSMP39A BXP 37.1 41.0 1.0 33.3 1.0 5.0 7.4 53.9 0.100 TPSMP43A BZP 40.9 45.2 1.0 36.8 1.0 5.0 6.7 59.3 0.101 Notes (1) V BR measured after IT applied for 300 μs, IT = square wave pulse or equivalent (2) Surge current waveform per fig. 3 and derated per fig. 2 (3) All terms and symbols are consistent with ANSI/IEEE C62.35 ORDERING INFORMATION (Example) PREFERRED P/N TPSMP6.8AHM3_A/H (1) TPSMP6.8AHM3_A/I (1) UNIT WEIGHT (g) PREFERRED PACKAGE CODE BASE QUANTITY DELIVERY MODE 0.024 H 3000 7" diameter plastic tape and reel 0.024 I 10 000 13" diameter plastic tape and reel Note (1) Automotive grade Revision: 25-Apr-2022 Document Number: 88471 2 For technical questions within your region: DiodesAmericas@vishay.com, DiodesAsia@vishay.com, DiodesEurope@vishay.com THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000 TPSMP6.8A thru TPSMP43A www.vishay.com Vishay General Semiconductor RATINGS AND CHARACTERISTICS CURVES (TA = 25 °C, unless otherwise noted) 10 000 PPPM - Peak Pulse Power (kW) TPSMP13A thru TPSMP43A TPSMP7.5A thru TPSMP12A TPSMP6.8A 0.1 VR measured at Stand-Off Voltage, VWM 100 TJ = 25 °C f = 1.0 MHz Vsig = 50 mVp-p 10 1 100 10 1000 10 000 1 100 10 td - Pulse Width (µs) VWM - Reverse Stand-Off Voltage (V) Fig. 1 - Peak Pulse Power Rating Curve Fig. 4 - Typical Junction Capacitance 40 Peak Forward Surge Current (A) 100 75 50 25 35 30 25 20 15 10 5 0 0 0 25 50 75 100 125 150 175 10 1 200 100 TJ - Initial Temperature (°C) Number of Cycles at 50 Hz Fig. 2 - Pulse Derating Curve Fig. 5 - Maximum Peak Forward Surge Current 3.0 150 tr = 10 µs Peak Value IPPM 100 TJ = 25 °C Pulse Width (td) is defined as the Point where the Peak Current decays to 50 % of IPPM TA = TL, on Infinite Heatsink Half Value - IPP IPPM 2 50 10/1000 µs Waveform as defined by R.E.A. PM(AV) - Steady State Power Dissipation (W) IPPM - Peak Pulse Current, % IRSM VR, measured at Zero Bias 1000 1 0.01 0.1 Peak Pulse Power (PPP) of Current (IPP) Derating in Percentage (%) CJ - Junction Capacitance (pF) 10 2.5 2.0 FR-4 PCB, on Vishay minimum recommended Pad Layout 1.5 1.0 0.5 td 0.0 0 0 1.0 2.0 3.0 4.0 0 25 50 75 100 125 150 175 200 t - Time (ms) TJ - Initial Temperature (°C) Fig. 3 - Pulse Waveform Fig. 6 - Steady State Power Derating Curve Revision: 25-Apr-2022 Document Number: 88471 3 For technical questions within your region: DiodesAmericas@vishay.com, DiodesAsia@vishay.com, DiodesEurope@vishay.com THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000 TPSMP6.8A thru TPSMP43A www.vishay.com Vishay General Semiconductor PACKAGE OUTLINE DIMENSIONS in inches (millimeters) SMP (DO-220AA) 0.012 (0.30) REF. Cathode Band 0.053 (1.35) 0.041 (1.05) 0.086 (2.18) 0.074 (1.88) 0.142 (3.61) 0.126 (3.19) 0.036 (0.91) 0.024 (0.61) 0.103 (2.60) 0.087 (2.20) 0.032 (0.80) 0.016 (0.40) 0.158 (4.00) 0.146 (3.70) Mounting pad layout 0.105 (2.67) 0.013 (0.35) 0.004 (0.10) 0.025 0.030 (0.635) (0.762) 0.045 (1.15) 0.033 (0.85) 0.012 (0.30) 0.018 (0.45) 0.000 (0.00) 0.006 (0.15) 0.100 (2.54) 0.050 (1.27) Revision: 25-Apr-2022 Document Number: 88471 4 For technical questions within your region: DiodesAmericas@vishay.com, DiodesAsia@vishay.com, DiodesEurope@vishay.com THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000 Legal Disclaimer Notice www.vishay.com Vishay Disclaimer ALL PRODUCT, PRODUCT SPECIFICATIONS AND DATA ARE SUBJECT TO CHANGE WITHOUT NOTICE TO IMPROVE RELIABILITY, FUNCTION OR DESIGN OR OTHERWISE. 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