TSSF4500

TSSF4500 www.vishay.com Vishay Semiconductors High Speed Infrared Emitting Diode, 890 nm, GaAlAs Double Hetero FEATURES • • • • • • • • • • • • • 94 8688 DESCRIPTION Package type: leaded Package form: side view Dimensions (L x W x H in mm): 4.5 x 4 x 4.8 Peak wavelength: λp = 890 nm High reliability High radiant power High radiant intensity Angle of half intensity: ϕ = ± 22° Low forward voltage Suitable for high pulse current operation High modulation bandwidth: fc = 12 MHz Good spectral matching with Si photodetectors Compliant to RoHS Directive 2002/95/EC and in accordance to WEEE 2002/96/EC Note ** Please see document “Vishay Material Category Policy”: www.vishay.com/doc?99902 TSSF4500 is an infrared, 890 nm emitting diode in GaAlAs double hetero (DH) technology with high radiant power and high speed, molded in a clear, untinted plastic package. APPLICATIONS • Infrared high speed remote control and free air data transmission systems with high modulation frequencies or high data transmission rate requirements • TSSF4500 is ideal for the design of transmission systems according to IrDA requirements and for carrier frequency based systems (e.g. ASK/FSK - coded, 450 kHz or 1.3 MHz) PRODUCT SUMMARY COMPONENT Ie (mW/sr) ϕ (deg) λp (nm) tr (ns) 20 ± 22 890 30 TSSF4500 Note • Test conditions see table “Basic Characteristics” ORDERING INFORMATION ORDERING CODE TSSF4500 PACKAGING REMARKS PACKAGE FORM Bulk MOQ: 4000 pcs, 4000 pcs/bulk Side view Note • MOQ: minimum order quantity ABSOLUTE MAXIMUM RATINGS (Tamb = 25 °C, unless otherwise specified) PARAMETER TEST CONDITION SYMBOL VALUE UNIT Reverse voltage VR 5 V Forward current IF 100 mA mA Peak forward current tp/T = 0.5, tp = 100 μs IFM 200 Surge forward current tp = 100 μs IFSM 1.5 A PV 160 mW Power dissipation Rev. 1.7, 24-Aug-11 Document Number: 81040 1 For technical questions, contact: emittertechsupport@vishay.com THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000 TSSF4500 www.vishay.com Vishay Semiconductors ABSOLUTE MAXIMUM RATINGS (Tamb = 25 °C, unless otherwise specified) PARAMETER TEST CONDITION SYMBOL VALUE UNIT Tj 100 °C Operating temperature range Tamb - 40 to + 100 °C Storage temperature range Tstg - 40 to + 100 °C t ≤ 5 s, 2 mm from case Tsd 260 °C Leads not soldered RthJA 450 K/W Junction temperature Soldering temperature Thermal resistance junction/ambient 125 IF - Forward Current (mA) PV - Power Dissipation (mW) 250 200 150 RthJA 100 50 100 0 75 RthJA 50 25 0 0 94 8029 20 40 60 80 100 0 Tamb - Ambient Temperature (°C) 94 7916 Fig. 1 - Power Dissipation Limit vs. Ambient Temperature 20 40 60 80 100 Tamb - Ambient Temperature (°C) Fig. 2 - Forward Current Limit vs. Ambient Temperature BASIC CHARACTERISTICS (Tamb = 25 °C, unless otherwise specified) PARAMETER Forward voltage Temperature coefficient of VF Reverse current Junction capacitance Radiant intensity TEST CONDITION SYMBOL TYP. MAX. IF = 100 mA, tp = 20 ms VF 1.35 1.6 IF = 1.5 A, tp = 100 μs VF 2.4 V IF = 1 mA TKVF - 1.8 mV/K VR = 5 V IR VR = 0 V, f = 1 MHz, E = 0 Cj IF = 100 mA, tp = 20 ms Ie MIN. 20 V 10 μA 50 mW/sr 160 10 UNIT pF IF = 1 A, tp = 100 μs Ie 200 IF = 100 mA, tp = 20 ms φe 35 mW IF = 100 mA TKφe - 0.7 %/K ϕ ± 22 deg Peak wavelength IF = 100 mA λp 890 nm Spectral bandwidth IF = 100 mA Δλ 40 nm Temperature coefficient of λp IF = 100 mA TKλp 0.2 nm/K Rise time IF = 100 mA tr 30 ns Fall time IF = 100 mA tf 30 ns IDC = 70 mA, IAC = 30 mA pp fc 12 MHz d 2.1 mm Radiant power Temperature coefficient of φe Angle of half intensity Cut-off frequency Virtual source diameter Rev. 1.7, 24-Aug-11 mW/sr Document Number: 81040 2 For technical questions, contact: emittertechsupport@vishay.com THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000 TSSF4500 www.vishay.com Vishay Semiconductors BASIC CHARACTERISTICS (Tamb = 25 °C, unless otherwise specified) 0° 20° 102 101 40° 1.0 0.9 50° 0.8 60° 70° 0.7 ϕ - Angular Displacement 103 10 10° 30° Ie rel - Relative Radiant Intensity IF - Forward Current (mA) 104 80° 0 0 1 2 3 4 94 8883 0.6 0.4 0.2 0 VF - Forward Voltage (V) 94 8880 Fig. 3 - Forward Current vs. Forward Voltage Fig. 6 - Relative Radiant Intensity vs. Angular Displacement Ie - Radiant Intensity (mW/sr) 1000 100 10 tp = 0.1 ms 1 0.1 1 21440 10 100 1000 IF - Forward Current (mA) Fig. 4 - Radiant Intensity vs. Forward Current Φe rel - Relative Radiant Power 1.25 1.0 0.75 0.5 0.25 0 800 20082 900 1000 λ - Wavelength (nm) Fig. 5 - Relative Radiant Power vs. Wavelength Rev. 1.7, 24-Aug-11 Document Number: 81040 3 For technical questions, contact: emittertechsupport@vishay.com THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000 TSSF4500 www.vishay.com Vishay Semiconductors PACKAGE DIMENSIONS in millimeters 4.5 ± 0.15 4 ± 0.15 1.7 ± 0.15 (2.4) e) er .75 h (sp - 0.5 ± 0.3 18.4 4.8 < 0.7 R1 C Area not plane 0.6 ± 0.15 A 0.45 + 0.2 - 0.1 2.54 nom. 0.4 + 0.15 technical drawings according to DIN specifications Drawing-No.: 6.544-5253.01-4 Issue:1; 01.07.96 96 12206 Rev. 1.7, 24-Aug-11 Document Number: 81040 4 For technical questions, contact: emittertechsupport@vishay.com THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000 Legal Disclaimer Notice www.vishay.com Vishay Disclaimer ALL PRODUCT, PRODUCT SPECIFICATIONS AND DATA ARE SUBJECT TO CHANGE WITHOUT NOTICE TO IMPROVE RELIABILITY, FUNCTION OR DESIGN OR OTHERWISE. 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