U290-E3

U290/291 Vishay Siliconix N-Channel JFETs PRODUCT SUMMARY Part Number VGS(off) (V) rDS(on) Max (
) ID(off) Typ (pA) tON Typ (ns) U290 −4.0 to −10 3 10 14 U291 −1.5 to −4.5 7 10 14 FEATURES D D D D D Low On-Resistance: U290 < 3
Fast Switching—tON: 14 ns High Off-Isolation Low Capacitance: 20 pF Low Insertion Loss BENEFITS D D D D D APPLICATIONS Low Error Voltage High-Speed Analog Circuit Performance Negligible “Off-Error,” Excellent Accuracy Good Frequency Response Eliminates Additional Buffering D D D D D Analog Switches Choppers Sample-and-Hold Normally “On” Switches Current Limiters DESCRIPTION The U290/U291 are high-performance JFET analog switches designed to offer low on-resistance and fast switching. This series features the lowest on-resistance of any JFET in the industry today. For similar products in TO-226A (TO-92) packaging, see the J105/106/107 data sheet. TheTO-206AC (TO-52) hermetically sealed case makes this series suitable for military applications. TO-206AC (TO-52) S 1 Ordering Information: U290—E3 U291—E3 2 3 G and Case D Top View U290 U291 ABSOLUTE MAXIMUM RATINGS Gate-Drain, Gate-Source Voltage . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . −30 V Gate Current . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 100 mA Storage Temperature . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . −65 to 200_C Operating Junction Temperature . . . . . . . . . . . . . . . . . . . . . . . . . . −55 to 150_C Document Number: 70235 S-41139—Rev. A, 07-Jun-04 Power Dissipationa . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 500 mW Notes a. Derate 4 mW/_C above 25_C www.vishay.com 1 U290/291 Vishay Siliconix SPECIFICATIONS (TA = 25_C UNLESS OTHERWISE NOTED) Limits U290 Parameter Symbol Test Conditions Typa V(BR)GSS IG = −1 A , VDS = 0 V −35 VGS(off) VDS = 15 V, ID = 3 nA Min U291 Max Min −10 −1.5 Max Unit Static Gate-Source Breakdown Voltage Gate-Source Cutoff Voltage Saturation Drain Currentb IDSS Gate Reverse Current VDS = 10 V, VGS = 0 V TA = 125_C IG Drain Cutoff Current ID(off) D( ff) −30 500 VGS = −15 V, VDS = 0 V IGSS Gate Operating Currentb −30 −4.0 −4.5 200 V mA −0.02 −1 −1 nA −0.01 −1 −1 A VDG = 10 V, ID = 25 mA −0.01 VDS = 5 V, VGS = −10 V 0.01 1 1 −0.005 1 1 A 3 7
TA = 125_C Drain-Source On-Resistance rDS(on) VGS = 0 V, ID = 1 mA Gate-Source Forward Voltage VGS(F) IG = 1 mA , VDS = 0 V 0.7 nA V Dynamic Common-Source Forward Transconductanceb gfs Common-Source Output Conductanceb gos Drain-Source On-Resistance VDS = 10 V, V ID = 25 mA, mA f = 1 kHz 55 mS 5 rds(on) VGS = 0 V, ID = 1 mA, f = 1 kHz 3 7 Common-Source Input Capacitance Ciss VDS = 0 V, VGS = 0 V, f = 1 MHz 120 160 160 Common-Source Reverse Transfer Capacitance Crss VDS = 0 V, VGS = −15 V, f = 1 MHz 20 30 30 en VDG = 10 V, ID = 25 mA, f = 1 kHz 3 Equivalent Input Noise Voltage
pF nV⁄√Hz Switching Turn On Time Turn-On td(on) 6 15 15 tr 8 20 20 5 15 15 9 20 20 VDD = 1.5 V, VGS(H) = 0 V See Switching Diagram td(off) Turn-Off Time tf Notes a. Typical values are for DESIGN AID ONLY, not guaranteed nor subject to production testing. b. Pulse test: PW v300 s duty cycle v3%. ns NVA TYPICAL CHARACTERISTICS (TA = 25_C UNLESS OTHERWISE NOTED) On-Resistance and Drain Current vs. Gate-Source Cutoff Voltage rDS 6 4 0.8 2 0.4 0 0 0 −2 −4 −6 −8 VGS(off) − Gate-Source Cutoff Voltage (V) www.vishay.com 2 1.2 IDSS −10 rDS(on) − Drain-Source On-Resistance ( Ω ) 1.6 IDSS − Saturation Drain Current (mA) rDS(on) − Drain-Source On-Resistance ( Ω ) rDS @ ID = 10 mA, VGS = 0 V IDSS @ VDS = 10 V, VGS = 0 V 8 On-Resistance vs. Drain Current 20 2 .0 10 TA = 25_C 16 VGS(off) = −3 V 12 8 −5 V 4 −8 V 0 10 100 1000 ID − Drain Current (mA) Document Number: 70235 S-41139—Rev. A, 07-Jun-04 U290/291 Vishay Siliconix TYPICAL CHARACTERISTICS (TA = 25_C UNLESS OTHERWISE NOTED) On-Resistance vs. Temperature Output Characteristics 500 ID = 10 mA rDS changes X 0.7%/_C VGS(off) = −5 V 6 VGS(off) = −3 V −5 V 4 −8 V 2 −0.5 V 300 −1.0 V −1.5 V 200 −2.0 V −2.5 V 100 −3.0 V 0 −55 0 −35 −15 5 25 45 65 85 105 125 2 Turn-On Switching 8 10 Turn-Off Switching 20 td(off) independent of device VGS(off) VDD = 1.5 V, VGS(L) = −10 V tr approximately independent of ID VDD = 1.5 V, RG = 50
VGS(L) = −10 V 16 Switching Time (ns) Switching Time (ns) 6 4 VDS − Drain-Source Voltage (V) TA − Temperature (_C) tr td(on) @ ID = 30 mA 8 4 12 td(off) 8 tf VGS(off) = −3 V 4 td(on) @ ID = 10 mA VGS(off) = −8 V 0 0 0 −2 −4 −8 −6 −10 0 VGS(off) − Gate-Source Cutoff Voltage (V) 10 30 20 40 50 ID − Drain Current (mA) Capacitance vs. Gate-Source Voltage 150 Transconductance vs. Drain Current 200 gfs − Forward Transconductance (mS) VDS = 0 V f = 1 MHz 120 C (pF) VGS = 0 V 400 8 ID − Drain Current (mA) rDS(on) − Drain-Source On-Resistance ( Ω ) 10 90 Ciss 60 Crss 30 0 VGS(off) = −5 V VDS = 10 V f = 1 kHz 100 TA = −55_C 25_C 10 125_C 1 0 −4 −8 −12 −16 VGS − Gate-Source Voltage (V) Document Number: 70235 S-41139—Rev. A, 07-Jun-04 −20 1 10 100 ID − Drain Current (mA) www.vishay.com 3 U290/291 Vishay Siliconix TYPICAL CHARACTERISTICS (TA = 25_C UNLESS OTHERWISE NOTED) Output Conductance vs. Drain Current 20 gos − Output Conductance (mS) VDS = 10 V f = 1 kHz VDG = 10 V (nV ⁄ √ Hz ) VGS(off) = −5 V 10 TA = −55_C 10 en − Noise Voltage 25_C 1 Noise Voltage vs. Frequency 100 125_C 0.1 ID = 10 mA 1 1 10 100 10 100 1k ID − Drain Current (mA) 300 30 100 nA 24 10 nA Gate Leakage Current TA = 125_C 100 mA gfs 18 gos 12 140 6 100 0 −2 −4 −6 −8 IGSS @ 125_C IG − Gate Leakage 260 gos − Output Conductance (mS) gfs − Forward Transconductance (mS) gfs and gos @ VDS = 10 V VGS = 0 V, f = 1 kHz 180 100 k f − Frequency (Hz) Forward Transconductance and Output Conductance vs. Gate-Source Cutoff Voltage 220 10 k 25 mA 1 nA 100 mA 100 pA IGSS @ 25_C 10 pA 0 −10 25 mA TA = 25_C 1 pA 0 4 VGS(off) − Gate-Source Cutoff Voltage (V) 8 12 16 20 VDG − Drain-Gate Voltage (V) VDD RL SWITCHING TIME TEST CIRCUIT VGS(L) RL* ID(on) U290 U291 −12 V −7 V 50
50
28 mA 27 mA * Non-Inductive Input Pulse Rise Time < 1 ns Fall Time < 1 ns Pulse Width 100 ns PRF 1 MHz www.vishay.com 4 Sampling Scope Rise Time 0.4 ns Input Resistance 10 M
Input Capacitance 1.5 pF OUT VGS(H) VGS(L) 1 k
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Document Number: 70235 S-41139—Rev. A, 07-Jun-04 Legal Disclaimer Notice Vishay Disclaimer All product specifications and data are subject to change without notice. Vishay Intertechnology, Inc., its affiliates, agents, and employees, and all persons acting on its or their behalf (collectively, “Vishay”), disclaim any and all liability for any errors, inaccuracies or incompleteness contained herein or in any other disclosure relating to any product. Vishay disclaims any and all liability arising out of the use or application of any product described herein or of any information provided herein to the maximum extent permitted by law. The product specifications do not expand or otherwise modify Vishay’s terms and conditions of purchase, including but not limited to the warranty expressed therein, which apply to these products. No license, express or implied, by estoppel or otherwise, to any intellectual property rights is granted by this document or by any conduct of Vishay. The products shown herein are not designed for use in medical, life-saving, or life-sustaining applications unless otherwise expressly indicated. Customers using or selling Vishay products not expressly indicated for use in such applications do so entirely at their own risk and agree to fully indemnify Vishay for any damages arising or resulting from such use or sale. Please contact authorized Vishay personnel to obtain written terms and conditions regarding products designed for such applications. Product names and markings noted herein may be trademarks of their respective owners. Document Number: 91000 Revision: 18-Jul-08 www.vishay.com 1