U431

U430/431 Vishay Siliconix Matched N-Channel Pairs PRODUCT SUMMARY Part Number VGS(off) (V) V(BR)GSS Min (V) gfs Min (mS) IG Typ (pA) jVGS1 – VGS2j Typ (mV) U430 –1 to –4 –25 10 –15 25 U431 –2 to –6 –25 10 –15 25 FEATURES BENEFITS APPLICATIONS D D D D D D D D D D D D D Wideband Differential Amps D High-Speed, Temp-Compensated, Single-Ended Input Amps D High-Speed Comparators D Impedance Converters Two-Chip Design High Slew Rate Low Offset/Drift Voltage Low Gate Leakage: 15 pA Low Noise High CMRR: 75 dB Tight Differential Match vs. Current Improved Op Amp Speed, Settling Time Accuracy Minimum Input Error/Trimming Requirement Insignificant Signal Loss/Error Voltage High System Sensitivity Minimum Error with Large Input Signals DESCRIPTION The U430/431 are matched JFET pairs assembled in a TO-78 package. These devices offer good power gain even at frequencies beyond 250 MHz. The TO-78 package is available with full military processing (see Military Information). For similar products, see the low-noise U/SST401 series, the high-gain 2N5911/5912, and the low-leakage U421/423 data sheets. TO-78 S1 S2 1 G1 7 G2 6 2 5 3 D1 4 D2 Case Top View ABSOLUTE MAXIMUM RATINGS Gate-Drain, Gate-Source Voltage . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . –25 V Gate Current . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 10 mA Lead Temperature (1/16” from case for 10 sec.) . . . . . . . . . . . . . . . . . . 300 _C Storage Temperature . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . –65 to 200_C Operating Junction Temperature . . . . . . . . . . . . . . . . . . . . . . . . . . –55 to 150_C Document Number: 70249 S-04031—Rev. E, 04-Jun-01 Power Dissipation : Per Sidea . . . . . . . . . . . . . . . . . . . . . . . . 300 mW Totalb . . . . . . . . . . . . . . . . . . . . . . . . . . . 500 mW Notes a. Derate 2.4 mW/_C above 25_C b. Derate 4 mW/_C above 25_C www.vishay.com 8-1 U430/431 Vishay Siliconix SPECIFICATIONS (TA = 25_C UNLESS OTHERWISE NOTED) Limits U430 U431 Symbol Test Conditions Typb V(BR)GSS IG = –1 mA, VDS = 0 V –35 VGS(off) VDS = 10 V, ID = 1 nA –1 –4 –2 –6 Saturation Drain Currentb IDSS VDS = 10 V, VGS = 0 V 12 30 24 60 mA Gate Reverse Current IGSS Parameter Min –25 Max Min Max Unit Static Gate-Source Breakdown Voltage Gate-Source Cutoff Voltage VGS = –15 V, VDS = 0 V TA = 150_C VDG = 10 V, ID = 5 mA Gate Operating Current Gate-Source Forward Voltage IG VGS(F) TA = 150_C IG = 10 mA , VDS = 0 V –25 V –5 –150 –150 pA –10 –150 –150 nA –15 pA –10 nA 0.8 1 1 V Dynamic Common-Source Forward Transconductanceb gfs 15 10 10 mS VDS = 10 V, ID = 10 mA , f = 1 kHz Common-Source Output Conductanceb gos Common-Source Input Capacitance Ciss 100 250 250 4.5 5 5 2 2.5 2.5 VGS = –10 V, VDS = 0 V, f = 1 MHz Common-Source Reverse Transfer Capacitance Crss Equivalent Input Noise Voltage en VDS = 10 V, ID = 10 mA f = 100 Hz mS pF nV⁄ √Hz 6 High Frequency Common-Source Forward Transconductance gfs Common-Source Output Conductance gos Power-Match Source Admittance gig 14 VDS = 10 V, ID = 10 mA f = 100 MHz 0.13 mS 12 Matching Differential Gate-Source Voltage Saturation Drain Current Ratioc Transconductance Ratioc Gate-Source Cutoff Voltage Ratioc Differential Gate Current Common Mode Rejection Ratio |V GS1–V GS2| I DSS1 I DSS2 gfs1 gfs2 V GS(off)1 V GS(off)2 |I G1–I G2| CMRR VDG = 10 V, ID = 10 mA 25 VDS = 10 V, VGS = 0 V 0.95 0.9 1 0.9 1 VDS = 10 V, ID = 10 mA, f = 1 kHz 0.95 0.9 1 0.9 1 VDS = 10 V, ID = 1 nA 0.95 0.9 1 0.9 1 VDG = 10 V, ID = 5 mA –2 pA VDG = 5 to 10 V, ID = 10 mA 75 dB Notes a. Typical values are for DESIGN AID ONLY, not guaranteed nor subject to production testing. b. Pulse test: PW v300 ms duty cycle v3%. c. Assumes smaller value in the numerator. www.vishay.com 8-2 mV NZBD Document Number: 70249 S-04031—Rev. E, 04-Jun-01 U430/431 Vishay Siliconix TYPICAL CHARACTERISTICS (TA = 25_C UNLESS OTHERWISE NOTED) Drain Current and Transconductance vs. Gate-Source Cutoff Voltage Gate Leakage Current 50 80 40 60 30 gfs 40 20 IDSS 10 20 0 –1 –3 –4 –2 VGS(off) – Gate-Source Cutoff Voltage (V) 10 mA TA = 25_C IGSS @ 25_C 0.1 pA 0 3 180 40 120 rDS gos 20 60 0 gfs – Forward Transconductance (mS) 60 gos – Output Conductance (µS) 240 0 –4 15 VDS = 10 V f = 1 kHz 16 TA = –55_C 12 25_C 8 125_C 4 0 –5 0.1 1 VGS(off) – Gate-Source Cutoff Voltage (V) 10 ID – Drain Current (mA) Transconductance vs. Gate-Source Voltage Transconductance vs. Gate-Source Voltage 50 30 24 VDS = 10 V f = 1 kHz VGS(off) = –3 V gfs – Forward Transconductance (mS) VGS(off) = –1.5 V gfs – Forward Transconductance (mS) 12 20 VGS(off) = –3 V 80 –3 9 Common-Source Forward Transconductance vs. Drain Current 300 –2 4 VDG – Drain-Gate Voltage (V) rDS @ ID = 1 mA, VGS = 0 V gos @ VDS = 10 V, VGS = 0 V, f = 1 kHz –1 200 mA 10 pA –5 100 rDS(on) – Drain-Source On-Resistance ( Ω ) IGSS @ 125_C 100 pA On-Resistance and Output Conductance vs. Gate-Source Cutoff Voltage 0 200 mA IG @ ID = 10 mA 1 pA 0 0 TA = 125_C 1 nA IG – Gate Leakage IDSS @ VDS = 10 V, VGS = 0 V gfs @ VDS = 10 V, VGS = 0 V f = 1 kHz 10 nA gfs – Forward Transconductance (mS) IDSS – Saturation Drain Current (mA) 100 TA = –55_C 25_C 18 125_C 12 6 VDS = 10 V f = 1 kHz 40 TA = –55_C 30 25_C 20 125_C 10 0 0 0 –0.4 –0.8 –1.2 –1.6 VGS – Gate-Source Voltage (V) Document Number: 70249 S-04031—Rev. E, 04-Jun-01 –2 0 –0.6 –1.2 –1.8 –2.4 –3 VGS – Gate-Source Voltage (V) www.vishay.com 8-3 U430/431 Vishay Siliconix TYPICAL CHARACTERISTICS (TA = 25_C UNLESS OTHERWISE NOTED) Output Characteristics Output Characteristics 20 50 VGS = 0 V 16 40 –0.2 V 12 ID – Drain Current (mA) ID – Drain Current (mA) VGS = 0 V VGS(off) = –3 V VGS(off) = –1.5 V –0.4 V 8 –0.6 V –0.8 V 4 –0.4 V 30 –0.8 V –1.2 V 20 –1.6 V 10 –2.0 V –1.0 V 0 –2.4 V 0 0 2 4 6 8 10 0 2 VDS – Drain-Source Voltage (V) 4 Output Characteristics 8 10 Output Characteristics 15 30 VGS(off) = –1.5 V VGS(off) = –3 V VGS = 0 V 12 VGS = 0 V 24 ID – Drain Current (mA) ID – Drain Current (mA) 6 VDS – Drain-Source Voltage (V) –0.2 V 9 –0.4 V 6 –0.6 V –0.8 V 3 –0.4 V 18 –0.8 V –1.2 V 12 –1.6 V 6 –2.0 V –2.4 V –1.0 V 0 0 0 0.2 0.4 0.6 0.8 1 0 0.2 VDS – Drain-Source Voltage (V) Transfer Characteristics 0.8 1 100 VGS(off) = –1.5 V VDS = 10 V f = 1 kHz VGS(off) = –3 V VDS = 10 V f = 1 kHz 80 ID – Drain Current (mA) 24 ID – Drain Current (mA) 0.6 Transfer Characteristics 30 TA = –55_C 18 25_C 12 125_C 6 60 TA = –55_C 25_C 40 125_C 20 0 0 0 –0.4 –0.8 –1.2 –1.6 VGS – Gate-Source Voltage (V) www.vishay.com 8-4 0.4 VDS – Drain-Source Voltage (V) –2 0 –0.6 –1.2 –1.8 –2.4 –3 VGS – Gate-Source Voltage (V) Document Number: 70249 S-04031—Rev. E, 04-Jun-01 U430/431 Vishay Siliconix TYPICAL CHARACTERISTICS (TA = 25_C UNLESS OTHERWISE NOTED) On-Resistance vs. Drain Current Circuit Voltage Gain vs. Drain Current 100 TA = 25_C 1 ) R Lg os Assume VDD = 15 V, VDS = 5 V 80 80 VGS(off) = –1.5 V 60 40 –3 V RL + 60 10 V ID VGS(off) = –1.5 V 40 –3 V 20 20 0 0 1 10 100 0.1 1 10 ID – Drain Current (mA) ID – Drain Current (mA) Common-Source Input Capacitance vs. Gate-Source Voltage Common-Source Reverse Feedback Capacitance vs. Gate-Source Voltage 15 10 C rss – Reverse Feedback Capacitance (pF) f = 1 MHz C iss – Input Capacitance (pF) g fs R L AV + AV – Voltage Gain rDS(on) – Drain-Source On-Resistance ( Ω ) 100 12 VDS = 0 V 9 6 5V 3 0 f = 1 MHz 8 6 VDS = 0 V 4 2 5V 0 0 –4 –8 –12 –16 –20 0 VGS – Gate-Source Voltage (V) –8 –12 –16 –20 VGS – Gate-Source Voltage (V) Input Admittance vs. Frequency 100 –4 Forward Admittance vs. Frequency 100 VDG = 10 V ID = 10 mA Common–Gate VDG = 10 V ID = 10 mA Common–Gate gig –gfg 10 (mS) (mS) 10 big 1 bfg 1 0.1 0.1 100 200 500 f – Frequency (MHz) Document Number: 70249 S-04031—Rev. E, 04-Jun-01 1000 100 200 500 1000 f – Frequency (MHz) www.vishay.com 8-5 U430/431 Vishay Siliconix TYPICAL CHARACTERISTICS (TA = 25_C UNLESS OTHERWISE NOTED) Output Admittance vs. Frequency Reverse Admittance vs. Frequency 10 100 VDG = 10 V ID = 10 mA Common–Gate VDG = 10 V ID = 10 mA Common–Gate bog 1 10 (mS) (mS) –brg +grg 0.1 gog –grg 1 0.01 0.1 200 100 500 100 1000 f – Frequency (MHz) Equivalent Input Noise Voltage vs. Frequency Output Conductance vs. Drain Current VGS(off) = –3 V 16 gos – Output Conductance (µS) Hz 1000 150 VDS = 10 V en – Noise Voltage nV / 500 f – Frequency (MHz) 20 ID = 1 mA 12 8 4 ID = 10 mA VDS = 10 V f = 1 kHz 120 90 TA = –55_C 60 25_C 30 125_C 0 0 10 100 1k f – Frequency (Hz) www.vishay.com 8-6 200 10 k 100 k 0.1 1 10 ID – Drain Current (mA) Document Number: 70249 S-04031—Rev. E, 04-Jun-01 Legal Disclaimer Notice Vishay Disclaimer All product specifications and data are subject to change without notice. Vishay Intertechnology, Inc., its affiliates, agents, and employees, and all persons acting on its or their behalf (collectively, “Vishay”), disclaim any and all liability for any errors, inaccuracies or incompleteness contained herein or in any other disclosure relating to any product. Vishay disclaims any and all liability arising out of the use or application of any product described herein or of any information provided herein to the maximum extent permitted by law. The product specifications do not expand or otherwise modify Vishay’s terms and conditions of purchase, including but not limited to the warranty expressed therein, which apply to these products. No license, express or implied, by estoppel or otherwise, to any intellectual property rights is granted by this document or by any conduct of Vishay. The products shown herein are not designed for use in medical, life-saving, or life-sustaining applications unless otherwise expressly indicated. Customers using or selling Vishay products not expressly indicated for use in such applications do so entirely at their own risk and agree to fully indemnify Vishay for any damages arising or resulting from such use or sale. Please contact authorized Vishay personnel to obtain written terms and conditions regarding products designed for such applications. Product names and markings noted herein may be trademarks of their respective owners. Document Number: 91000 Revision: 18-Jul-08 www.vishay.com 1