UH1C-E3/5AT

SUP40N25-60 Vishay Siliconix N-Channel 250 V (D-S) 175 °C MOSFET FEATURES PRODUCT SUMMARY VDS (V) 250 RDS(on) () ID (A) 0.060 at VGS = 10 V 40 0.064 at VGS = 6 V 38.7 • • • • Qg (Typ) 95 TrenchFET® Power MOSFETS 175 °C Junction Temperature New Low Thermal Resistance Package Compliant to RoHS Directive 2002/95/EC RoHS COMPLIANT APPLICATIONS TO-220AB • Industrial D G G D S S Top View Ordering Information: SUP40N25-60-E3 (Lead (Pb)-free) N-Channel MOSFET ABSOLUTE MAXIMUM RATINGS (TC = 25 °C, unless otherwise noted) Parameter Symbol Limit Drain-Source Voltage VDS 250 Gate-Source Voltage VGS ± 30 Continuous Drain Current (TJ = 175 °C) TC = 25 °C TC = 125 °C Pulsed Drain Current Avalanche Current a L = 0.1 mH Repetitive Avalanche Energy TC = 25 °C Maximum Power Dissipationa TA = 25 Operating Junction and Storage Temperature Range °Cc ID Unit V 40 23 IDM 70 IAR 35 EAR 61 A mJ b PD 300 3.75 W TJ, Tstg - 55 to 175 °C Symbol Limit Unit THERMAL RESISTANCE RATINGS Parameter Junction-to-Ambient (PCB Mount) c Junction-to-Case (Drain) RthJA 40 RthJC 0.5 °C/W Notes: a. Duty cycle  1 %. b. See SOA curve for voltage derating. c. When mounted on 1" square PCB (FR-4 material). Document Number: 73132 S11-2130 Rev. B, 31-Oct-11 www.vishay.com 1 This document is subject to change without notice. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000 SUP40N25-60 Vishay Siliconix SPECIFICATIONS (TJ = 25 °C, unless otherwise noted) Parameter Symbol Test Conditions Min . VDS VDS = 0 V, ID = 250 µA 250 VGS(th) VDS = VGS, ID = 250 µA 2 IGSS VDS = 0 V, VGS = ± 30 V Typ. Max. Unit Static Drain-Source Breakdown Voltage Gate Threshold Voltage Gate-Body Leakage Zero Gate Voltage Drain Current On-State Drain Currenta IDSS 1 VDS = 250 V, VGS = 0 V, TJ = 125 °C 50 VDS = 250 V, VGS = 0 V, TJ = 175 °C 250 VDS 5 V, VGS = 10 V VGS = 10 V, ID = 20 A a Forward Transconductance ± 250 VDS = 250 V, VGS = 0 V ID(on) Drain-Source On-State Resistancea 4 RDS(on) gfs 70 V nA µA A 0.049 0.060 VGS = 10 V, ID = 20 A, TJ = 125 °C 0.121 VGS = 10 V, ID = 20 A, TJ = 175 °C 0.163 VGS = 6 V, ID = 15 A 0.051 VDS = 15 V, ID = 20 A 70  0.064 S Dynamicb Input Capacitance Ciss Output Capacitance Coss Reverse Transfer Capacitance Crss Total Gate Chargec Qg c Gate-Source Charge Qgs Gate-Drain Chargec Qgd c Rise Timec Turn-Off Delay Timec Fall Timec pF 300 170 95 VDS = 125 V, VGS = 10 V, ID = 45 A td(off) nC 28  f = 1 MHz 1.6 22 35 VDD = 100 V, RL = 2.78  ID  45 A, VGEN = 10 V, Rg = 2.5  220 330 40 60 145 220 td(on) tr 140 34 Rg Gate Resistance Turn-On Delay Time 5000 VGS = 0 V, VDS = 25 V, f = 1 MHz tf ns Source-Drain Diode Ratings and Characteristics (TC = 25 °C)b IS 45 Pulsed Current ISM 70 Forward Voltagea VSD Continuous Current Reverse Recovery Time Peak Reverse Recovery Current Reverse Recovery Charge IF = 45 A, VGS = 0 V trr IRM(REC) Qrr IF = 45 A, di/dt = 100 A/µs A 1 1.5 V 150 225 ns 12 18 A 0.9 2 µC Notes: a. Pulse test; pulse width  300 µs, duty cycle  2 %. b. Guaranteed by design, not subject to production testing. c. Independent of operating temperature. Stresses beyond those listed under “Absolute Maximum Ratings” may cause permanent damage to the device. These are stress ratings only, and functional operation of the device at these or any other conditions beyond those indicated in the operational sections of the specifications is not implied. Exposure to absolute maximum rating conditions for extended periods may affect device reliability. www.vishay.com 2 Document Number: 73132 S11-2130 Rev. B, 31-Oct-11 This document is subject to change without notice. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000 SUP40N25-60 Vishay Siliconix TYPICAL CHARACTERISTICS (25 °C, unless otherwise noted) 100 100 VGS = 10 thru 7 V 6V 80 I D - Drain Current (A) I D - Drain Current (A) 80 60 40 5V 20 60 40 TC = 125 °C 20 25 °C 4V - 55 °C 0 0 0 2 4 6 8 10 0 1 2 3 4 5 VDS - Drain-to-Source Voltage (V) VGS - Gate-to-Source Voltage (V) Output Characteristics Transfer Characteristics 150 6 0.10 120 RDS(on) - On-Resistance () g fs - Transconductance (S) TC = - 55 °C 25 °C 90 125 °C 60 30 0.06 VGS = 6 V VGS = 10 V 0.04 0.02 0.00 0 0 10 20 30 40 50 0 60 20 40 60 80 100 ID - Drain Current (A) ID - Drain Current (A) Transconductance On-Resistance vs. Drain Current 20 7000 V GS - Gate-to-Source Voltage (V) 6000 Ciss C - Capacitance (pF) 0.08 5000 4000 3000 2000 Crss 1000 Coss 0 VDS = 125 V ID = 45 A 16 12 8 4 0 0 40 80 120 160 200 0 30 60 90 120 VDS - Drain-to-Source Voltage (V) Qg - Total Gate Charge (nC) Capacitance Gate Charge Document Number: 73132 S11-2130 Rev. B, 31-Oct-11 150 180 www.vishay.com 3 This document is subject to change without notice. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000 SUP40N25-60 Vishay Siliconix TYPICAL CHARACTERISTICS (25 °C, unless otherwise noted) 100 VGS = 10 V ID = 20 A 2.4 I S - Source Current (A) R DS(on) - On-Resistance (Normalized) 2.8 2.0 1.6 1.2 TJ = 150 °C TJ = 25 °C 10 0.8 0.4 - 50 - 25 0 25 50 75 100 125 150 1 0 175 0.3 TJ - Junction Temperature (°C) 0.6 0.9 1.2 VSD - Source-to-Drain Voltage (V) On-Resistance vs. Junction Temperature Source-Drain Diode Forward Voltage 100 300 290 ID = 1.0 mA 280 I Dav (A) 10 V DS (V) IAV (A) at TA = 25 °C 270 260 1 250 240 IAV (A) at TA = 150 °C 0.1 0.00001 0.0001 0.001 0.01 0.1 tin (s) Avalanche Current vs. Time www.vishay.com 4 1 230 - 50 - 25 0 25 50 75 100 125 150 175 TJ - Junction Temperature (°C) Drain Source Breakdown vs. Junction Temperature Document Number: 73132 S11-2130 Rev. B, 31-Oct-11 This document is subject to change without notice. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000 SUP40N25-60 Vishay Siliconix THERMAL RATINGS 100 50 10 µs *Limited by rDS(on) I D - Drain Current (A) I D - Drain Current (A) 100 µs 10 40 30 20 10 1 ms 1 10 ms, 100 ms, dc 0.1 TC = 25 °C Single Pulse 0.01 0.001 0 0 25 50 75 100 125 150 175 0.1 TC - Ambient Temperature (°C) Maximum Avalanche and Drain Current vs. Case Temperature 100 1 10 1000 VDS - Drain-to-Source Voltage (V) *VGS > minimum V GS at which rDS(on) is specified Safe Operating Area, Case Temperature 2 Normalized Effective Transient Thermal Impedance 1 Duty Cycle = 0.5 0.2 0.1 0.1 0.05 0.02 Single Pulse 0.01 10- 4 10- 3 10- 2 10- 1 1 Square Wave Pulse Duration (sec) Normalized Thermal Transient Impedance, Junction-to-Case Vishay Siliconix maintains worldwide manufacturing capability. Products may be manufactured at one of several qualified locations. Reliability data for Silicon Technology and Package Reliability represent a composite of all qualified locations. For related documents such as package/tape drawings, part marking, and reliability data, see www.vishay.com/ppg?73132. Document Number: 73132 S11-2130 Rev. B, 31-Oct-11 www.vishay.com 5 This document is subject to change without notice. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000 Package Information www.vishay.com Vishay Siliconix TO-220AB MILLIMETERS A E F D H(1) Q ØP 3 2 L(1) 1 M* L b(1) INCHES DIM. MIN. MAX. MIN. MAX. A 4.25 4.65 0.167 0.183 b 0.69 1.01 0.027 0.040 b(1) 1.20 1.73 0.047 0.068 c 0.36 0.61 0.014 0.024 D 14.85 15.49 0.585 0.610 D2 12.19 12.70 0.480 0.500 E 10.04 10.51 0.395 0.414 e 2.41 2.67 0.095 0.105 e(1) 4.88 5.28 0.192 0.208 F 1.14 1.40 0.045 0.055 H(1) 6.09 6.48 0.240 0.255 0.115 J(1) 2.41 2.92 0.095 L 13.35 14.02 0.526 0.552 L(1) 3.32 3.82 0.131 0.150 ØP 3.54 3.94 0.139 0.155 Q 2.60 3.00 0.102 0.118 ECN: T14-0413-Rev. P, 16-Jun-14 DWG: 5471 Note * M = 1.32 mm to 1.62 mm (dimension including protrusion) Heatsink hole for HVM C b e J(1) e(1) D2 Document Number: 71195 1 For technical questions, contact: hvm@vishay.com THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000 Revison: 16-Jun-14 Legal Disclaimer Notice www.vishay.com Vishay Disclaimer ALL PRODUCT, PRODUCT SPECIFICATIONS AND DATA ARE SUBJECT TO CHANGE WITHOUT NOTICE TO IMPROVE RELIABILITY, FUNCTION OR DESIGN OR OTHERWISE. Vishay Intertechnology, Inc., its affiliates, agents, and employees, and all persons acting on its or their behalf (collectively, “Vishay”), disclaim any and all liability for any errors, inaccuracies or incompleteness contained in any datasheet or in any other disclosure relating to any product. Vishay makes no warranty, representation or guarantee regarding the suitability of the products for any particular purpose or the continuing production of any product. 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