V10KM120DU
www.vishay.com
Vishay General Semiconductor
High Current Density Surface-Mount
Trench MOS Barrier Schottky Rectifier
Ultra Low VF = 0.54 V at IF = 2.5 A
FEATURES
1
2
• Trench MOS Schottky technology
3
4
8
7
• Low forward voltage drop, low power losses
• High efficiency operation
• Meets MSL level 1, per
LF maximum peak of 260 °C
6
5
Available
J-STD-020,
• AEC-Q101 qualified available
- Automotive ordering code: base P/NHM3
FlatPAK 5 x 6
1 and / or 2
7, 8
3 and / or 4
5, 6
• Material categorization: for definitions of compliance
please see www.vishay.com/doc?99912
TYPICAL APPLICATIONS
DESIGN SUPPORT TOOLS
click logo to get started
For use in low voltage high frequency DC/DC converters,
freewheeling diodes, and polarity protection applications.
MECHANICAL DATA
Models
Available
PRIMARY CHARACTERISTICS
IF(AV)
2x5A
VRRM
120 V
IFSM
100 A
VF at IF = 5 A (TA = 125 °C)
0.62 V
TJ max.
175 °C
Package
FlatPAK 5 x 6
Circuit configuration
Separated cathode
Case: FlatPAK 5 x 6
Molding compound meets UL 94 V-0 flammability rating
Base P/N-M3 - halogen-free, RoHS-compliant
Base P/NHM3 - halogen-free, RoHS-compliant, and
AEC-Q101 qualified
Terminals: matte tin plated leads, solderable per
J-STD-002 and JESD 22-B102
M3 and HM3 suffix meets JESD 201 class 2 whisker test
MAXIMUM RATINGS (TA = 25 °C unless otherwise noted)
PARAMETER
SYMBOL
Device marking code
Maximum repetitive peak reverse voltage
V10KM120DU
UNIT
V10M12D
VRRM
IF(AV)
(1)
120
V
5
A
IF(AV) (2)
2.5
A
Peak forward surge current 8.3 ms single half sine-wave
superimposed on rated load per diode
IFSM
100
A
Operating junction temperature range
TJ (3)
-40 to +175
°C
Storage temperature range
TSTG
-55 to +175
°C
Maximum DC forward current per diode
Notes
(1) With infinite heatsink
(2) Free air, mounted on recommended pad area
(3) The heat generated must be less than the thermal conductivity from junction-to-ambient: dP /dT < 1/R
D
J
θJA
Revision: 18-Jul-2018
Document Number: 87537
1
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THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT
ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000
V10KM120DU
www.vishay.com
Vishay General Semiconductor
ELECTRICAL CHARACTERISTICS (TA = 25 °C unless otherwise noted)
PARAMETER
TEST CONDITIONS
IF = 2.5 A
Instantaneous forward voltage per diode
IF = 5.0 A
IF = 2.5 A
IF = 5.0 A
VR = 90 V
Reverse current per diode
VR = 120 V
Typical junction capacitance per diode
SYMBOL
TA = 25 °C
VF (1)
TA = 125 °C
TA = 25 °C
TA = 125 °C
TA = 25 °C
TA = 125 °C
4.0 V, 1 MHz
IR (2)
IR
TYP.
0.64
-
0.81
0.89
0.54
-
0.62
0.70
0.01
-
0.8
-
-
0.35
1.6
6
450
-
(2)
CJ
MAX.
UNIT
V
mA
pF
Notes
(1) Pulse test: 300 μs pulse width, 1 % duty cycle
(2) Pulse test: pulse width ≤ 5 ms
THERMAL CHARACTERISTICS (TA = 25 °C unless otherwise noted)
PARAMETER
SYMBOL
TYP.
MAX.
RθJA (1)(2)
100
-
RθJM (3)
3.0
4.0
Thermal resistance per diode
UNIT
°C/W
Notes
(1) The heat generated must be less than thermal conductivity from junction to ambient: dP /dT < 1/R
D
J
θJA
(2) Free air, mounted on recommended copper pad area; thermal resistance R
θJA - junction to ambient
(3) Mounted on infinite heatsink; thermal resistance R
θJM - junction-to-mount
ORDERING INFORMATION (Example)
PREFERRED P/N
UNIT WEIGHT (g) PREFERRED PACKAGE CODE
V10KM120DU-M3/H
V10KM120DU-M3/I
V10KM120DUHM3/H
(1)
V10KM120DUHM3/I (1)
BASE QUANTITY
DELIVERY MODE
0.10
H
1500
7" diameter plastic tape and reel
0.10
I
6000
13" diameter plastic tape and reel
0.10
H
1500
7" diameter plastic tape and reel
0.10
I
6000
13" diameter plastic tape and reel
Note
AEC-Q101 qualified
(1)
Revision: 18-Jul-2018
Document Number: 87537
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For technical questions within your region: DiodesAmericas@vishay.com, DiodesAsia@vishay.com, DiodesEurope@vishay.com
THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT
ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000
V10KM120DU
www.vishay.com
Vishay General Semiconductor
6
Instantaneous Reverse Current (mA)
Average Forward Rectified Current (A)
RATINGS AND CHARACTERISTICS CURVES (TA = 25 °C unless otherwise noted)
RthJM = 3 °C/W
5
4
3
RthJA = 100 °C/W
2
TM measured at
cathode terminal
mount typical values
1
0
0
25
50
75
100
125
150
175
100
TJ = 175 °C
TJ = 150 °C
10
1
0.1
TJ = 125 °C
TJ = 100 °C
0.01
TJ = 25 °C
0.001
0.0001
0.00001
TJ = -40 °C
0.000001
10
Ambient / Mount Temperature (°C)
20
30
40
50
60
Fig. 1 - Maximum Forward Current Derating Curve
90
100
10 000
Junction Capacitance (pF)
D = 0.8
Average Power Loss (W)
80
Fig. 4 - Typical Reverse Leakage Characteristics
4.0
D = 0.5
3.0
D = 1.0
D = 0.3
D = 0.2
2.0
D = 0.1
T
1.0
D = tp/T
TJ = 25 °C
f = 1.0 MHz
Vsig = 50 mVp-p
1000
100
10
tp
1
0.0
0
1
2
3
4
5
0.1
6
1
10
Average Forward Current (A)
Transient Thermal Impedance (°C/W)
TJ = 175 °C
TJ = 150 °C
TJ = 125 °C
TJ = 100 °C
1
TJ = 25 °C
TJ = -40 °C
0.1
0
0.2
0.4
0.6
0.8
1.0
1.2
1000
Fig. 5 - Typical Junction Capacitance
100
10
100
Reverse Voltage (V)
Fig. 2 - Forward Power Loss Characteristics
Instantaneous Forward Current (A)
70
Percent of Rated Peak Reverse Voltage (%)
1.4
1.6
Instantaneous Forward Voltage (V)
Fig. 3 - Typical Instantaneous Forward Characteristics
1000
Junction-to-ambient
100
10
1
0.01
0.1
1
10
100
t - Pulse Duration (s)
Fig. 6 - Typical Transient Thermal Impedance
Revision: 18-Jul-2018
Document Number: 87537
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THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT
ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000
V10KM120DU
www.vishay.com
Vishay General Semiconductor
4 x L2
DIMENSIONS in inches (millimeters)
7
6
6xe
5
E
E1
(E3)
2 x b1
8
F2
5
8xb
6
7
(d1)
F1
F1
8
M
E2
D
D1
F2
4
3
Top View
4
2
1
D3
2 x D4
4 x L1
2
(8 x a)
1
3
(K)
(2 x d2)
D2
Bottom View
(Dual Pad)
0.180 (4.56)
0.022 (0.56)
Side View
0.055 (1.40)
A
0.191 (4.84)
c
(8 x Θ)
0.259 (6.59)
0.082 (2.08)
0.030 (0.75)
0.039 (1.00)
0.219 (5.55)
DIM.
A
(a)
b
b1
c
D
D1
D2
D3
D4
(d1)
(d2)
E
E1
E2
(E3)
e
(K)
L1
L2
M
Θ
MIN.
0.035
0.013
0.013
0.008
0.197
0.189
0.154
0.020
0.063
0.238
0.228
0.157
0.039
0.019
0.012
0.128
0°
INCHES
NOM.
0.039
0.006
0.017
0.017
0.203
0.193
0.161
0.024
0.069
0.016
0.005
0.244
0.232
0.165
0.144
0.050 BSC
0.138
-
0.050 (1.27)
0.030 (0.75)
PCB Footprint
(Dual Pad)
MAX.
0.043
0.020
0.020
0.014
0.209
0.197
0.169
0.031
0.075
0.250
0.236
0.173
-
MIN.
0.89
0.32
0.32
0.20
5.00
4.80
3.90
0.50
1.60
6.05
5.80
4.00
-
0.043
0.031
0.148
10°
1.00
0.48
0.30
3.25
0°
MILLIMETERS
NOM.
0.99
0.15
0.43
0.43
5.15
4.90
4.10
0.60
1.75
0.40
0.125
6.20
5.90
4.20
3.65
1.27 BSC
3.50
-
MAX.
1.09
0.52
0.52
0.35
5.30
5.00
4.30
0.80
1.90
6.35
6.00
4.40
1.10
0.80
3.75
10°
Notes
• Dimensioning and tolerancing per ASME Y14.5-2009
• Dimensions D1 and E1 do not include mold flash or gate burrs
• Dimension (XX) means reference only
Revision: 18-Jul-2018
Document Number: 87537
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For technical questions within your region: DiodesAmericas@vishay.com, DiodesAsia@vishay.com, DiodesEurope@vishay.com
THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT
ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000
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Revision: 09-Jul-2021
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Document Number: 91000