V12PM10
www.vishay.com
Vishay General Semiconductor
High Current Density Surface-Mount
TMBS® (Trench MOS Barrier Schottky) Rectifier
Ultra Low VF = 0.50 V at IF = 6 A
FEATURES
eSMP® Series
• Very low profile - typical height of 1.1 mm
Available
• Ideal for automated placement
K
• Trench MOS Schottky technology
• Low forward voltage drop, low power losses
1
• High efficiency operation
2
• Meets MSL level 1, per
LF maximum peak of 260 °C
SMPC (TO-277A)
K
Anode 1
Cathode
Anode 2
DESIGN SUPPORT TOOLS
J-STD-020,
• AEC-Q101 qualified available
- Automotive ordering code; base P/NHM3
• Material categorization: for definitions of compliance
please see www.vishay.com/doc?99912
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TYPICAL APPLICATIONS
For use in low voltage high frequency inverters,
freewheeling, DC/DC converters, and polarity protection
applications.
Models
Available
MECHANICAL DATA
PRIMARY CHARACTERISTICS
IF(AV)
12 A
VRRM
100 V
IFSM
200 A
VF at IF = 15 A (125 °C)
0.61 V
TJ max.
175 °C
Package
SMPC (TO-277A)
Circuit configuration
Single
Case: SMPC (TO-277A)
Molding compound meets UL 94 V-0 flammability rating
Base P/N-M3 - halogen-free, RoHS-compliant, and
commercial grade
Base P/NHM3 - halogen-free, RoHS-compliant and
AEC-Q101 qualified
Terminals: matte tin plated leads, solderable per
J-STD-002 and JESD 22-B102
M3 and HM3 suffix meets JESD 201 class 2 whisker test
MAXIMUM RATINGS (TA = 25 °C unless otherwise noted)
PARAMETER
SYMBOL
Device marking code
Maximum repetitive peak reverse voltage
V12PM10
UNIT
12M10
VRRM
100
V
(1)
12
IF(AV) (2)
4.2
Peak forward surge current 10 ms single half sine-wave
superimposed on rated load
IFSM
200
A
Operating junction temperature range
TJ (3)
-40 to +175
°C
Storage temperature range
TSTG
-55 to +175
°C
Maximum DC forward current
IF(AV)
A
Notes
(1) Mounted on 30 mm x 30 mm pad areas aluminum PCB
(2) Free air, mounted on recommended pad area
(3) The heat generated must be less than the thermal conductivity from junction to ambient: dP /dT < 1/R
D
J
JA
Revision: 29-Jan-2019
Document Number: 87629
1
For technical questions within your region: DiodesAmericas@vishay.com, DiodesAsia@vishay.com, DiodesEurope@vishay.com
THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT
ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000
V12PM10
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Vishay General Semiconductor
ELECTRICAL CHARACTERISTICS (TA = 25 °C unless otherwise noted)
PARAMETER
TEST CONDITIONS
IF = 6 A
Instantaneous forward voltage
IF = 12 A
IF = 6 A
IF = 12 A
VR = 70 V
Reverse current
VR = 100 V
Typical junction capacitance
SYMBOL
TA = 25 °C
TYP.
MAX.
0.57
-
0.69
0.75
0.50
-
0.61
0.66
TA = 25 °C
0.02
-
TA = 125 °C
2.5
-
-
0.20
5
16
1200
-
VF (1)
TA = 125 °C
IR (2)
TA = 25 °C
TA = 125 °C
4.0 V, 1 MHz
CJ
UNIT
V
mA
pF
Notes
(1) Pulse test: 300 μs pulse width, 1 % duty cycle
(2) Pulse test: Pulse width 5 ms
THERMAL CHARACTERISTICS (TA = 25 °C unless otherwise specified)
PARAMETER
SYMBOL
RJA
Typical thermal resistance
V12PM10
(1)(2)
75
RJM (3)
4
UNIT
°C/W
Notes
(1) The heat generated must be less than the thermal conductivity from junction to ambient: dP /dT < 1/R
D
J
JA
(2) Free air, mounted on recommended PCB, 2 oz. pad area; thermal resistance R
JA - junction to ambient
(3) Units mounted on 30 mm x 30 mm aluminum PCB, thermal resistance R
JM - junction to mount
ORDERING INFORMATION (Example)
PREFERRED P/N
UNIT WEIGHT (g)
PACKAGE CODE
BASE QUANTITY
DELIVERY MODE
V12PM10-M3/H
0.10
H
1500
7" diameter plastic tape and reel
V12PM10-M3/I
0.10
I
6500
13" diameter plastic tape and reel
V12PM10HM3/H (1)
0.10
H
1500
7" diameter plastic tape and reel
V12PM10HM3/I (1)
0.10
I
6500
13" diameter plastic tape and reel
Note
(1) AEC-Q101 qualified
Revision: 29-Jan-2019
Document Number: 87629
2
For technical questions within your region: DiodesAmericas@vishay.com, DiodesAsia@vishay.com, DiodesEurope@vishay.com
THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT
ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000
V12PM10
www.vishay.com
Vishay General Semiconductor
RATINGS AND CHARACTERISTICS CURVES (TA = 25 °C unless otherwise specified)
Axis Title
Axis Title
8
6
RthJA = 75 °C/W
100
4
2
0
25
50
75
100
125
150
TJ = 150 °C
TJ = 125 °C
1
1000
TJ = 100 °C
0.1
0.01
100
0.001
TJ = 25 °C
0.0001
TJ = -40 °C
10
0.00001
10
0
TJ = 175 °C
10
20
175
40
60
100
Mount Temperature (°C)
Percent of Rated Peak Reverse Voltage (%)
Fig. 4 - Typical Reverse Characteristics
Axis Title
Axis Title
10000
D = 0.8
9.0
10000
10 000
TJ = 25 °C
f = 1.0 MHz
Vsig = 50 mVp-p
1000
6.0
D = 0.2
D = 1.0
5.0
D = 0.1
4.0
100
3.0
T
2.0
1.0
D = tp/T
10
2
4
6
8
1000
100
100
tp
0
0
1000
1st line
2nd line
D = 0.3
7.0
2nd line
Junction Capacitance (pF)
D = 0.5
8.0
1st line
2nd line
2nd line
Average Power Loss (W)
80
Fig. 1 - Maximum Forward Current Derating Curve
10.0
10
12
10
10
14
0.1
1
10
100
Average Forward Current (A)
Reverse Voltage (V)
Fig. 2 - Forward Power Loss Characteristics
Fig. 5 - Typical Junction Capacitance
Axis Title
Axis Title
100
1000
10
TJ = 150 °C
TJ = 125 °C
TJ = 100 °C
1
100
TJ = 25 °C
TJ = -40 °C
10
0.1
0
0.2
0.4
0.6
0.8
1.0
1.2
10000
Junction to Ambient
1000
1st line
2nd line
TJ = 175 °C
2nd line
Transient Thermal Impedance (°C/W)
10000
100
2nd line
Instantaneous Forward Current (A)
1st line
2nd line
1000
2nd line
Instantaneous Reverse Current (mA)
TM measured at cathode
terminal mount typical values
10
1st line
2nd line
2nd line
Average Forward Rectified Current (A)
RthJM = 4.0 °C/W
12
10000
100
10000
14
10
100
1
0.01
10
0.1
1
10
100
Instantaneous Forward Voltage (V)
t - Pulse Duration (s)
Fig. 3 - Typical Instantaneous Forward Characteristics
Fig. 6 - Typical Transient Thermal Impedance
Revision: 29-Jan-2019
Document Number: 87629
3
For technical questions within your region: DiodesAmericas@vishay.com, DiodesAsia@vishay.com, DiodesEurope@vishay.com
THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT
ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000
V12PM10
www.vishay.com
Vishay General Semiconductor
PACKAGE OUTLINE DIMENSIONS in inches (millimeters)
SMPC (TO-277A)
0.187 (4.75)
0.175 (4.45)
0.016 (0.40)
0.006 (0.15)
K
0.262 (6.65)
0.250 (6.35)
0.242 (6.15)
0.238 (6.05)
2
1
0.047 (1.20)
0.039 (1.00)
0.171 (4.35)
0.167 (4.25)
0.146 (3.70)
0.134 (3.40)
Mounting Pad Layout
0.087 (2.20)
0.075 (1.90)
0.189 (4.80)
MIN.
0.189 (4.80)
0.173 (4.40)
0.186 (4.72)
MIN.
0.268
(6.80)
0.155 (3.94)
NOM.
0.030 (0.75) NOM.
0.049 (1.24)
0.037 (0.94)
0.050 (1.27)
MIN.
0.084 (2.13) NOM.
0.053 (1.35)
0.041 (1.05)
0.041
(1.04)
0.055 (1.40)
MIN.
Conform to JEDEC® TO-277A
Revision: 29-Jan-2019
Document Number: 87629
4
For technical questions within your region: DiodesAmericas@vishay.com, DiodesAsia@vishay.com, DiodesEurope@vishay.com
THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT
ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000
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Revision: 09-Jul-2021
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Document Number: 91000