V12PM153
www.vishay.com
Vishay General Semiconductor
High Current Density Surface-Mount
TMBS® (Trench MOS Barrier Schottky) Rectifier
Ultra Low VF = 0.54 V at IF = 6 A
FEATURES
eSMP® Series
• Very low profile - typical height of 1.1 mm
Available
• Trench MOS Schottky technology
K
• Low forward voltage drop, low power losses
• High efficiency operation
1
• Meets MSL level 1, per
LF maximum peak of 260 °C
2
J-STD-020,
SMPC (TO-277A)
• AEC-Q101 qualified available
- Automotive ordering code; base P/NHM3
K
Anode 1
• Material categorization: for definitions of compliance
please see www.vishay.com/doc?99912
Cathode
Anode 2
TYPICAL APPLICATIONS
LINKS TO ADDITIONAL RESOURCES
3D 3D
3D Models
For use in low voltage high frequency inverters,
freewheeling, DC/DC converters, and polarity protection
applications.
MECHANICAL DATA
PRIMARY CHARACTERISTICS
IF(AV)
12.0 A
VRRM
150 V
IFSM
200 A
VF at IF = 12.0 A (TJ = 125 °C)
0.62 V
TJ max.
175 °C
Package
SMPC (TO-277A)
Circuit configuration
Single
Case: SMPC (TO-277A)
Molding compound meets UL 94 V-0 flammability rating
Base P/N-M3 - halogen-free, RoHS-compliant, and
commercial grade
Base P/NHM3 - halogen-free, RoHS-compliant, and
AEC-Q101 qualified
Terminals: matte tin plated leads, solderable per
J-STD-002 and JESD 22-B102
M3 and HM3 suffix meets JESD 201 class 2 whisker test
MAXIMUM RATINGS (TA = 25 °C unless otherwise noted)
PARAMETER
SYMBOL
Device marking code
Maximum repetitive peak reverse voltage
V12PM153
UNIT
12MP
VRRM
150
IF (1)
12.0
IF (2)
3.7
Peak forward surge current 10 ms single half sine-wave
superimposed on rated load
IFSM
200
A
Operating junction temperature range
TJ (3)
-40 to +175
°C
Storage temperature range
TSTG
-55 to +175
°C
Maximum average forward rectified current (fig. 1)
V
A
Notes
(1) Mounted on 30 mm x 30 mm pad areas aluminum PCB
(2) Free air, mounted on recommended copper pad area
(3) The heat generated must be less than the thermal conductivity from junction-to-ambient: dP /dT
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