V20150C-E3/4W

V20150C-E3, VF20150C-E3, VB20150C-E3, VI20150C-E3 www.vishay.com Vishay General Semiconductor Dual High Voltage Trench MOS Barrier Schottky Rectifier Ultra Low VF = 0.59 V at IF = 5 A FEATURES TMBS ® TO-220AB ITO-220AB • Trench MOS Schottky technology • Low forward voltage drop, low power losses • High efficiency operation • Meets MSL level 1, per J-STD-020, LF maximum peak of 245 °C (for TO-263AB package) 2 V20150C 3 VF20150C 1 PIN 1 PIN 2 PIN 1 PIN 3 CASE PIN 3 D2PAK (TO-263AB) 2 1 3 • Solder bath temperature 275 °C maximum, 10 s, per JESD 22-B106 (for TO-220AB, ITO-220AB and TO-262AA package) PIN 2 • Material categorization: for definitions of compliance please see www.vishay.com/doc?99912 TO-262AA TYPICAL APPLICATIONS K K For use in high frequency converters, switching power supplies, freewheeling diodes, OR-ing diode, DC/DC converters and reverse battery protection. 2 1 VI20150C VB20150C PIN 1 K PIN 2 HEATSINK DESIGN SUPPORT TOOLS 1 2 PIN 1 PIN 2 PIN 3 K 3 MECHANICAL DATA Case: TO-220AB, ITO-220AB, D2PAK (TO-263AB), and TO-262AA Molding compound meets UL 94 V-0 flammability rating Base P/N-E3 - RoHS-compliant, commercial grade click logo to get started Terminals: matte tin plated leads, solderable J-STD-002 and JESD 22-B102 E3 suffix meets JESD 201 class 1A whisker test Models Available per Polarity: as marked PRIMARY CHARACTERISTICS IF(AV) Mounting Torque: 10 in-lbs maximum      2 x 10 A VRRM 150 V IFSM 120 A VF at IF = 10 A 0.69 V TJ max. 150 °C Package TO-220AB, ITO-220AB, D2PAK (TO-263AB), TO-262AA Circuit configuration Common cathode  MAXIMUM RATINGS (TA = 25 °C unless otherwise noted) PARAMETER SYMBOL V20150C VF20150C VB20150C VI20150C UNIT Maximum repetitive peak reverse voltage Maximum average forward rectified current (fig. 1) VRRM per device per diode IF(AV) 150 20 10 V A Peak forward surge current 8.3 ms single half sine-wave superimposed on rated load per diode IFSM 120 A Non-repetitive avalanche energy at TJ = 25 °C, L = 60 mH per diode EAS 70 mJ Peak repetitive reverse current at tp = 2 μs, 1 kHz, TJ = 38 °C ± 2 °C per diode IRRM 0.5 A Voltage rate of change (rated VR) dV/dt 10 000 V/μs VAC 1500 V TJ, TSTG -55 to +150 °C Isolation voltage (ITO-220AB only) from terminal to heatsink t = 1 min Operating junction and storage temperature range Revision: 18-Jun-2018 Document Number: 89046 1 For technical questions within your region: DiodesAmericas@vishay.com, DiodesAsia@vishay.com, DiodesEurope@vishay.com THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000 V20150C-E3, VF20150C-E3, VB20150C-E3, VI20150C-E3 www.vishay.com Vishay General Semiconductor ELECTRICAL CHARACTERISTICS (TA = 25 °C unless otherwise noted) PARAMETER TEST CONDITIONS Breakdown voltage IR = 1.0 mA Instantaneous forward voltage  per diode (1) IF = 10 A SYMBOL TYP. MAX. UNIT VBR 150 (minimum) - V TA = 25 °C IF = 5 A TA = 25 °C VF IF = 5 A TA = 125 °C IF = 10 A VR = 100 V Reverse current per diode (2) 1.20 0.59 - V 0.69 0.75 TA = 25 °C 1.3 - μA TA = 125 °C 1.2 - mA IR TA = 25 °C VR = 150 V 0.79 1.05 TA = 125 °C - 150 μA 3 15 mA Notes (1) Pulse test: 300 µs pulse width, 1 % duty cycle (2) Pulse test: Pulse width  40 ms THERMAL CHARACTERISTICS (TA = 25 °C unless otherwise noted) PARAMETER Typical thermal resistance per diode SYMBOL V20150C VF20150C VB20150C VI20150C UNIT RJC 2.8 5.0 2.8 2.8 °C/W ORDERING INFORMATION (Example) PACKAGE PREFERRED P/N UNIT WEIGHT (g) PACKAGE CODE BASE QUANTITY TO-220AB V20150C-E3/4W 1.88 4W 50/tube DELIVERY MODE Tube ITO-220AB VF20150C-E3/4W 1.75 4W 50/tube Tube TO-263AB VB20150C-E3/4W 1.39 4W 50/tube Tube TO-263AB VB20150C-E3/8W 1.39 8W 800/reel Tape and reel TO-262AA VI20150C-E3/4W 1.45 4W 50/tube Tube RATINGS AND CHARACTERISTICS CURVES (TA = 25 °C unless otherwise noted) 10 Resistive or Inductive Load D = 0.5 V(B,I)20150C 20 Average Power Loss (W) Average Forward Rectified Current (A) 25 VF20150C 15 10 5 D = 0.8 D = 0.3 8 D = 0.2 6 D = 1.0 D = 0.1 4 T 2 D = tp/T Mounted on Specific Heatsink tp 0 0 0 25 50 75 100 125 150 175 0 2 4 6 8 10 12 Case Temperature (°C) Average Forward Current (A) Fig. 1 - Maximum Forward Current Derating Curve Fig. 2 - Forward Power Loss Characteristics Per Diode Revision: 18-Jun-2018 Document Number: 89046 2 For technical questions within your region: DiodesAmericas@vishay.com, DiodesAsia@vishay.com, DiodesEurope@vishay.com THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000 V20150C-E3, VF20150C-E3, VB20150C-E3, VI20150C-E3 www.vishay.com Vishay General Semiconductor 10 Transient Thermal Impedance (°C/W) Instantaneous Forward Current (A) 100 TA = 150 °C 10 TA = 125 °C TA = 100 °C 1 TA = 25 °C 0.1 0 0.2 0.4 0.6 0.8 1.0 1.2 1.4 Junction to Case V(B,I)20150C 1 0.01 1.6 0.1 1 10 100 Instantaneous Forward Voltage (V) t - Pulse Duration (s) Fig. 3 - Typical Instantaneous Forward Characteristics Per Diode Fig. 6 - Typical Transient Thermal Impedance Per Diode 10 10 TA = 150 °C 1 TA = 125 °C Transient Thermal Impedance (°C/W) Instantaneous Reverse Current (mA) 100 TA = 100 °C 0.1 0.01 TA = 25 °C 0.001 0.0001 10 20 30 40 50 60 70 80 90 100 Junction to Case VF20150C 1 0.01 0.1 1 10 100 Percent of Rated Peak Reverse Voltage (%) t - Pulse Duration (s) Fig. 4 - Typical Reverse Characteristics Per Diode Fig. 7 - Typical Transient Thermal Impedance Per Diode Junction Capacitance (pF) 1000 T J = 25 °C f = 1.0 MHz Vsig = 50 mVp-p 100 10 0.1 1 10 100 Reverse Voltage (V) Fig. 5 - Typical Junction Capacitance Revision: 18-Jun-2018 Document Number: 89046 3 For technical questions within your region: DiodesAmericas@vishay.com, DiodesAsia@vishay.com, DiodesEurope@vishay.com THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000 V20150C-E3, VF20150C-E3, VB20150C-E3, VI20150C-E3 www.vishay.com Vishay General Semiconductor PACKAGE OUTLINE DIMENSIONS in inches (millimeters) TO-220AB 0.415 (10.54) 0.380 (9.65) 0.185 (4.70) 0.175 (4.44) 0.161 (4.08) 0.139 (3.53) 0.055 (1.39) 0.045 (1.14) 0.113 (2.87) 0.103 (2.62) 1 PIN 2 0.635 (16.13) 0.625 (15.87) 3 0.160 (4.06) 0.140 (3.56) 0.350 (8.89) 0.330 (8.38) 1.148 (29.16) 1.118 (28.40) 0.110 (2.79) 0.100 (2.54) 0.057 (1.45) 0.045 (1.14) 0.104 (2.65) 0.096 (2.45) 0.603 (15.32) 0.573 (14.55) 0.560 (14.22) 0.530 (13.46) 0.035 (0.90) 0.028 (0.70) 0.205 (5.20) 0.195 (4.95) 0.022 (0.56) 0.014 (0.36) Revision: 18-Jun-2018 Document Number: 89046 4 For technical questions within your region: DiodesAmericas@vishay.com, DiodesAsia@vishay.com, DiodesEurope@vishay.com THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000 V20150C-E3, VF20150C-E3, VB20150C-E3, VI20150C-E3 www.vishay.com Vishay General Semiconductor TO-262AA 0.411 (10.45) 0.380 (9.65) 0.950 (24.13) 0.920 (23.37) 1 PIN 2 3 0.185 (4.70) 0.175 (4.44) 0.055 (1.40) 0.047 (1.19) 0.055 (1.40) 0.045 (1.14) 0.401 (10.19) 0.381 (9.68) 0.350 (8.89) 0.330 (8.38) 0.510 (12.95) 0.470 (11.94) 0.160 (4.06) 0.140 (3.56) 0.110 (2.79) 0.100 (2.54) 0.057 (1.45) 0.045 (1.14) 0.104 (2.65) 0.096 (2.45) 0.560 (14.22) 0.530 (13.46) 0.035 (0.90) 0.028 (0.70) 0.205 (5.20) 0.195 (4.95) 0.022 (0.56) 0.014 (0.35) D2PAK (TO-263AB) 0.41 1 (10.45) 0.380 (9.65) 0.190 (4.83) 0.160 (4.06) 0.245 (6.22) MIN K 0.360 (9.14) 0.320 (8.13) 1 K 2 0.624 (15.85) 0.591(15.00) 0.055 (1.40) 0.045 (1.14) 0.42 MIN. (10.66) 0.33 (8.38) MIN. 0.055 (1.40) 0.047 (1.19) 0 to 0.01 (0 to 0.254) 0.037 (0.940) 0.027 (0.686) 0.110 (2.79) 0.090 (2.29) 0.021 (0.53) 0.014 (0.36) 0.105 (2.67) 0.095 (2.41) 0.140 (3.56) 0.110 (2.79) 0.205 (5.20) 0.195 (4.95) Mounting Pad Layout 0.670 (17.02) 0.591 (15.00) 0.15 (3.81) MIN. 0.08 MIN. (2.032) 0.105 (2.67) (0.095) (2.41) Revision: 18-Jun-2018 Document Number: 89046 5 For technical questions within your region: DiodesAmericas@vishay.com, DiodesAsia@vishay.com, DiodesEurope@vishay.com THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000 Legal Disclaimer Notice www.vishay.com Vishay Disclaimer ALL PRODUCT, PRODUCT SPECIFICATIONS AND DATA ARE SUBJECT TO CHANGE WITHOUT NOTICE TO IMPROVE RELIABILITY, FUNCTION OR DESIGN OR OTHERWISE. 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