V20202G-M3/4W

V20202G, VF20202G, VB20202G, VI20202G www.vishay.com Vishay General Semiconductor Dual High Voltage Trench MOS Barrier Schottky Rectifier Ultra Low VF = 0.61 V at IF = 5 A FEATURES TMBS ® TO-220AB • Trench MOS Schottky technology Gen 2 ITO-220AB • Low forward voltage drop, low power losses • High efficiency operation • Meets MSL level 1, per J-STD-020, LF maximum peak of 245 °C (for TO-263AB package) 2 3 1 V20202G 1 VF20202G PIN 1 PIN 2 PIN 1 PIN 3 CASE PIN 3 TO-263AB 2 • Solder bath temperature 275 °C maximum, 10 s, per JESD 22-B106 (for TO-220AB, ITO-220AB, and TO-262AA package) 3 • Material categorization: for definitions of compliance please see www.vishay.com/doc?99912 PIN 2 TYPICAL APPLICATIONS TO-262AA For use in high frequency DC/DC converters, switching power supplies, freewheeling diodes, OR-ing diode, and reverse battery protection. K K MECHANICAL DATA 2 1 1 VB20202G PIN 1 Case: TO-220AB, ITO-220AB, TO-263AB, and TO-262AA Molding compound meets UL 94 V-0 flammability rating Base P/N-M3 - halogen-free, RoHS-compliant, and commercial grade VI20202G K PIN 2 2 3 HEATSINK PIN 1 PIN 2 PIN 3 K Terminals: Matte tin plated leads, solderable J-STD-002 and JESD 22-B102 M3 suffix meets JESD 201 class 1A whisker test PRIMARY CHARACTERISTICS IF(AV) 2 x 10 A VRRM 200 V IFSM 130 A per Polarity: As marked Mounting Torque: 10 in-lbs max. VF at IF = 10 A (TA = 125 °C) 0.71 V TJ max. 175 °C Package TO-220AB, ITO-220AB, TO-263AB, TO-262AA Diode variations Common cathode MAXIMUM RATINGS (TA = 25 °C unless otherwise noted) PARAMETER SYMBOL Maximum repetitive peak reverse voltage Maximum average forward rectified current (fig. 1) VRRM per device per diode IF(AV) V20202G VF20202G VB20202G 200 20 10 VI20202G UNIT V A Maximum DC reverse voltage VDC 160 V Peak forward surge current 8.3 ms single half sine-wave superimposed on rated load per diode IFSM 130 A dV/dt 10 000 V/μs VAC 1500 V TJ, TSTG -40 to +175 °C Voltage rate of change (rated VR) Isolation voltage (ITO-220AB only) from terminal to heatsink, t = 1 min Operating junction and storage temperature range Revision: 12-Dec-16 Document Number: 87798 1 For technical questions within your region: DiodesAmericas@vishay.com, DiodesAsia@vishay.com, DiodesEurope@vishay.com THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000 V20202G, VF20202G, VB20202G, VI20202G www.vishay.com Vishay General Semiconductor ELECTRICAL CHARACTERISTICS (TA = 25 °C unless otherwise noted) PARAMETER TEST CONDITIONS IF = 5 A Instantaneous forward voltage per diode (1) IF = 10 A IF = 5 A IF = 10 A VR = 160 V Reverse current per diode (2) VR = 200 V SYMBOL TA = 25 °C VF TA = 125 °C TA = 25 °C TA = 125 °C IR TA = 25 °C TA = 125 °C TYP. MAX. 0.76 - UNIT 0.84 0.92 0.61 - 0.71 0.8 0.3 - μA 0.5 - mA - 150 μA 1.5 8 mA VI20202G UNIT V Notes (1) Pulse test: 300 μs pulse width, 1 % duty cycle (2) Pulse test: Pulse width  5 ms THERMAL CHARACTERISTICS (TA = 25 °C unless otherwise noted) PARAMETER SYMBOL V20202G VF20202G RJC 2.8 5.0 2.8 per device RJC 1.6 3.5 1.6 per device RJA (1)(2) 52 60 52 per diode Typical thermal resistance VB20202G °C/W Notes (1) The heat generated must be less than the thermal conductivity from junction-to-ambient: dP /dT < 1/R D J JA (2) Free air, without heatsink ORDERING INFORMATION (Example) PACKAGE UNIT WEIGHT (g) PACKAGE CODE BASE QUANTITY DELIVERY MODE TO-220AB V20202G-M3/4W PREFERRED P/N 1.88 4W 50/tube Tube ITO-220AB VF20202G-M3/4W 1.75 4W 50/tube Tube TO-263AB VB20202G-M3/4W 1.39 4W 50/tube Tube TO-263AB VB20202G-M3/8W 1.39 8W 800/reel Tape and reel TO-262AA VI20202G-M3/4W 1.45 4W 50/tube Tube Revision: 12-Dec-16 Document Number: 87798 2 For technical questions within your region: DiodesAmericas@vishay.com, DiodesAsia@vishay.com, DiodesEurope@vishay.com THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000 V20202G, VF20202G, VB20202G, VI20202G www.vishay.com Vishay General Semiconductor 22 100 000 RthJA = RthJC 20 Instantaneous Reverse Current (μA) Average Forward Rectified Current (A) RATINGS AND CHARACTERISTICS CURVES (TA = 25 °C unless otherwise noted) 18 16 14 12 V(B,I)20202G VF20202G 10 8 6 TA , RthJA 4 2 10 000 TA = 175 °C 1000 TA = 150 °C TA = 125 °C 100 TA = 100 °C 0 25 50 75 100 125 150 10 20 30 40 50 60 70 80 90 100 Percent of Rated Peak Reverse Voltage (%) Fig. 4 - Typical Reverse Characteristics Per Diode 1000 9 D = 0.8 8 TJ = 25 °C f = 1 MHz Vsig = 50 mVp-p D = 0.5 Junction Capacitance (pF) Average Power Loss (W) TA = 25 °C 0.1 175 Case Temperature (°C) Fig. 1 - Maximum Forward Current Derating Curve (D = Duty Cycle = 0.5) D = 0.3 7 D = 1.0 D = 0.2 6 5 D = 0.1 4 T 3 2 1 D = tp/T 100 tp 10 0 0 2 4 6 8 10 0.1 12 TA = 175 °C TA = 150 °C 10 TA = 125 °C TA = 100 °C TA = 25 °C 0.1 0.2 0.3 0.4 0.5 0.6 0.7 0.8 0.9 1.0 1.1 1.2 Instantaneous Forward Voltage (V) Fig. 3 - Typical Instantaneous Forward Characteristics Per Diode 10 100 Fig. 5 - Typical Junction Capacitance Per Diode Transient Thermal Impedance (°C/W) 100 1 Reverse Voltage (V) Average Forward Current (A) Fig. 2 - Forward Power Loss Characteristics Per Diode Instantaneous Forward Current (A) 1 0.01 0 1 10 10 Junction to Case 1 V(B,I)20202G VF20202G 0.1 0.01 0.1 1 10 100 t - Pulse Duration (s) Fig. 6 - Typical Transient Thermal Impedance Per Device Revision: 12-Dec-16 Document Number: 87798 3 For technical questions within your region: DiodesAmericas@vishay.com, DiodesAsia@vishay.com, DiodesEurope@vishay.com THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000 V20202G, VF20202G, VB20202G, VI20202G www.vishay.com Vishay General Semiconductor PACKAGE OUTLINE DIMENSIONS in inches (millimeters) TO-220AB 0.415 (10.54) 0.380 (9.65) 0.185 (4.70) 0.175 (4.44) 0.055 (1.39) 0.045 (1.14) 0.161 (4.08) 0.139 (3.53) 0.113 (2.87) 0.103 (2.62) PIN 1 2 3 0.635 (16.13) 0.625 (15.87) 0.160 (4.06) 0.140 (3.56) 0.350 (8.89) 0.330 (8.38) 1.148 (29.16) 1.118 (28.40) 0.057 (1.45) 0.045 (1.14) 0.603 (15.32) 0.573 (14.55) 0.110 (2.79) 0.100 (2.54) 0.560 (14.22) 0.530 (13.46) 0.035 (0.90) 0.028 (0.70) 0.104 (2.65) 0.096 (2.45) 0.022 (0.56) 0.014 (0.36) 0.205 (5.20) 0.195 (4.95) ITO-220AB 0.404 (10.26) 0.384 (9.75) 0.076 (1.93) REF. 0.076 (1.93) REF. 45° REF. 0.600 (15.24) 0.580 (14.73) 0.057 (1.45) 0.045 (1.14) 0.025 (0.64) 0.015 (0.38) 0.105 (2.67) 0.095 (2.41) 0.671 (17.04) 0.651 (16.54) PIN 1 0.560 (14.22) 0.530 (13.46) 7° REF. 0.140 (3.56) DIA. 0.125 (3.17) DIA. 2 3 0.191 (4.85) 0.171 (4.35) 0.057 (1.45) 0.045 (1.14) 0.035 (0.89) 0.025 (0.64) 0.190 (4.83) 0.170 (4.32) 0.110 (2.79) 0.100 (2.54) 0.135 (3.43) DIA. 0.122 (3.08) DIA. 7° REF. 0.350 (8.89) 0.330 (8.38) 7° REF. 0.110 (2.79) 0.100 (2.54) 0.028 (0.71) 0.020 (0.51) 0.205 (5.21) 0.195 (4.95) Revision: 12-Dec-16 Document Number: 87798 4 For technical questions within your region: DiodesAmericas@vishay.com, DiodesAsia@vishay.com, DiodesEurope@vishay.com THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000 V20202G, VF20202G, VB20202G, VI20202G www.vishay.com Vishay General Semiconductor TO-262AA 0.411 (10.45) 0.380 (9.65) 0.950 (24.13) 0.920 (23.37) 1 PIN 2 3 0.185 (4.70) 0.175 (4.44) 0.055 (1.40) 0.047 (1.19) 0.055 (1.40) 0.045 (1.14) 0.350 (8.89) 0.330 (8.38) 0.510 (12.95) 0.470 (11.94) 0.160 (4.06) 0.140 (3.56) 0.110 (2.79) 0.100 (2.54) 0.057 (1.45) 0.045 (1.14) 0.104 (2.65) 0.096 (2.45) 0.560 (14.22) 0.530 (13.46) 0.035 (0.90) 0.028 (0.70) 0.205 (5.20) 0.195 (4.95) TO-263AB 0.411 (10.45) 0.380 (9.65) 0.190 (4.83) 0.160 (4.06) 0.245 (6.22) MIN. 0.401 (10.19) 0.381 (9.68) 0.022 (0.56) 0.014 (0.35) Mounting Pad Layout 0.42 (10.66) MIN. 0.055 (1.40) 0.045 (1.14) K 0.33 (8.38) MIN. 0.360 (9.14) 0.320 (8.13) 1 K 2 0.624 (15.85) 0.591 (15.00) 0.670 (17.02) 0.591 (15.00) 0 to 0.01 (0 to 0.254) 0.110 (2.79) 0.090 (2.29) 0.021 (0.53) 0.014 (0.36) 0.037 (0.940) 0.027 (0.686) 0.105 (2.67) 0.095 (2.41) 0.055 (1.40) 0.047 (1.19) 0.205 (5.20) 0.195 (4.95) 0.140 (3.56) 0.110 (2.79) 0.15 (3.81) MIN. 0.08 (2.032) MIN. 0.105 (2.67) 0.095 (2.41) Revision: 12-Dec-16 Document Number: 87798 5 For technical questions within your region: DiodesAmericas@vishay.com, DiodesAsia@vishay.com, DiodesEurope@vishay.com THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. 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