V20DM63CHM3/I

V20DM63C www.vishay.com Vishay General Semiconductor Dual Low-Voltage TMBS® (Trench MOS Barrier Schottky) Rectifier Ultra Low VF = 0.45 V at IF = 5.0 A FEATURES eSMP® Series SMPD (TO-263AC) • Trench MOS Schottky technology Available • Very low profile - typical height of 1.7 mm • Ideal for automated placement K • Low forward voltage drop, low power losses • High efficiency operation 1 • Meets MSL level 1, per LF maximum peak of 260 °C 2 Top View Bottom View J-STD-020, • AEC-Q101 qualified available: - Automotive ordering code: base P/NHM3 • Material categorization: for definitions of compliance please see www.vishay.com/doc?99912 Anode 1 K Anode 2 Cathode TYPICAL APPLICATIONS LINKS TO ADDITIONAL RESOURCES For use in high frequency DC/DC converters, switching power supplies, freewheeling diodes, OR-ing diode, and reverse battery protection in commercial, industrial, and automotive application. 3D 3D 3D Models PRIMARY CHARACTERISTICS MECHANICAL DATA IF(AV) 2 x 10 A VRRM 60 V IFSM 120 A VF at IF = 10 A (TJ = 125 °C) 0.54 V TJ max. 175 °C Package SMPD (TO-263AC) Circuit configuration Common cathode Case: SMPD (TO-263AC) Molding compound meets UL 94 V-0 flammability rating Base P/N-M3 - halogen-free, RoHS-compliant Base P/NHM3 - halogen-free, RoHS-compliant, and AEC-Q101 qualified Terminals: matte tin plated leads, solderable per J-STD-002 and JESD 22-B102 M3 and HM3 suffix meet JESD 201 class 2 whisker test Polarity: as marked MAXIMUM RATINGS (TA = 25 °C unless otherwise noted) PARAMETER SYMBOL Device marking code UNIT V20DM63C Maximum repetitive peak reverse voltage Maximum average forward rectified current (fig. 1) V20DM63C VRRM per device per diode Peak forward surge current 8.3 ms single half sine-wave superimposed on rated load per diode IF(AV) (1) IFSM 60 20 10 120 Operating junction temperature range TJ (2) -40 to +175 Storage temperature range TSTG -55 to +175 V A A °C Notes (1) Mounted on infinite heatsink (2) The heat generated must be less than the thermal conductivity from junction-to-ambient: dP /dT < 1/R D J θJA Revision: 08-Oct-2021 Document Number: 98246 1 For technical questions within your region: DiodesAmericas@vishay.com, DiodesAsia@vishay.com, DiodesEurope@vishay.com THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000 V20DM63C www.vishay.com Vishay General Semiconductor ELECTRICAL CHARACTERISTICS (TJ = 25 °C unless otherwise noted) PARAMETER TEST CONDITIONS IF = 5 A Instantaneous forward voltage per diode TJ = 25 °C IF = 10 A VF (1) IF = 5 A TJ = 125 °C IF = 10 A Reverse current at rated VR per diode VR = 60 V Typical junction capacitance per diode 4.0 V, 1 MHz SYMBOL TJ = 25 °C TJ = 125 °C IR (2) CJ TYP. MAX. 0.54 - 0.60 0.66 0.45 - 0.54 0.60 - 0.02 1.0 3.5 1500 - UNIT V mA pF Notes (1) Pulse test: 300 μs pulse width, 1 % duty cycle (2) Pulse test: Pulse width ≤ 5 ms THERMAL CHARACTERISTICS (TA = 25 °C unless otherwise noted) PARAMETER Typical thermal resistance per device SYMBOL V20DM63C RθJC(1) 1.8 RθJA (2)(3) 58 UNIT °C/W Notes (1) Mounted on infinite heatsink (2) The heat generated must be less than the thermal conductivity from junction-to-ambient: dP /dT < 1/R D J θJA - junction-to-ambient (3) Free air, without heatsink ORDERING INFORMATION (Example) PREFERRED P/N UNIT WEIGHT (g) PACKAGE CODE BASE QUANTITY DELIVERY MODE V20DM63C-M3/I 0.55 I 2000/reel 13" diameter plastic tape and reel V20DM63CHM3/I (1) 0.55 I 2000/reel 13" diameter plastic tape and reel Note (1) AEC-Q101 qualified Revision: 08-Oct-2021 Document Number: 98246 2 For technical questions within your region: DiodesAmericas@vishay.com, DiodesAsia@vishay.com, DiodesEurope@vishay.com THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000 V20DM63C www.vishay.com Vishay General Semiconductor RATINGS AND CHARACTERISTICS CURVES (TA = 25 °C unless otherwise noted) Axis Title Axis Title 10000 10 100 RthJA = 58 °C/W 5 0 25 50 75 100 125 150 1 0.1 1000 0.01 TJ = 125 °C 0.001 TJ = 25 °C 0.00001 TJ = -40 °C 10 10 20 30 40 50 60 70 80 90 100 Mount Temperature (°C) Percent of Rated Peak Reverse Voltage (%) Fig. 1 - Maximum Forward Current Derating Curve Fig. 4 - Typical Reverse Leakage Characteristics Per Diode Axis Title Axis Title 10000 10000 10 000 TJ = 25 °C f = 1.0 MHz Vsig = 50 mVp-p D = 0.8 D = 0.3 1st line 2nd line 1000 D = 1.0 D = 0.2 4.0 D = 0.1 100 T 2.0 D = tp/T 10 2 4 6 1000 100 100 tp 0 0 1000 1st line 2nd line 6.0 2nd line Junction Capacitance (pF) D = 0.5 2nd line Average Power Loss (W) 100 0.0001 175 8.0 8 10 10 10 12 0.1 1 10 100 Average Forward Current (A) Reverse Voltage (V) Fig. 2 - Average Power Loss Characteristics Per Diode Fig. 5 - Typical Junction Capacitance Per Diode Axis Title Axis Title 10000 100 1000 TJ = 150 °C 1st line 2nd line 10 TJ = 125 °C TJ = 100 °C 1 100 TJ = 25 °C TJ = -40 °C 10 0.1 0 0.2 0.4 0.6 0.8 1.0 10000 Junction to Ambient 1000 1st line 2nd line TJ = 175 °C 2nd line Transient Thermal Impedance (°C/W) 100 2nd line Instantaneous Forward Current (A) TJ = 175 °C TJ = 150 °C TJ = 100 °C 0.000001 10 0 10 1st line 2nd line 15 1000 line Current (mA) Instantaneous 2nd Reverse RthJM = 1.8 °C/W 20 TM measured at cathode terminal mount typical values 10000 100 1st line 2nd line 2nd line Average Forward Rectified Current (A) 25 10 100 1 0.01 10 0.1 1 10 100 Instantaneous Forward Voltage (V) t - Pulse Duration (s) Fig. 3 - Typical Instantaneous Forward Characteristics Per Diode Fig. 6 - Typical Transient Thermal Impedance Revision: 08-Oct-2021 Document Number: 98246 3 For technical questions within your region: DiodesAmericas@vishay.com, DiodesAsia@vishay.com, DiodesEurope@vishay.com THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000 V20DM63C www.vishay.com Vishay General Semiconductor Axis Title 10000 60 Epoxy printed circuit board FR4 copper thickness = 70 µm 2nd line Thermal Resistance (°C/W) 55 50 1000 1st line 2nd line 45 40 35 100 30 25 S (cm2) 10 20 1 2 3 4 5 6 7 8 9 Copper Pad Areas (cm2) Fig. 7 - Thermal Resistance Junction-to-Ambient vs. Copper Pad Areas PACKAGE OUTLINE DIMENSIONS in inches (millimeters) SMPD (TO-263AC) 0.402 (10.20) 0.386 (9.80) 0.059 (1.50) REF. 0.071 (1.80) 0.063 (1.60) 0.020 (0.52) 0.011 (0.27) 0.048 (1.21) 0.032 (0.81) 0.354 (8.99) 0.338 (8.59) 0.509 (12.93) 0.485 (12.33) 0 to 0.01 (0 to 0.254) 0.069 (1.74) 0.053 (1.34) 0.020 (0.52) 0.011 (0.27) 0.052 (1.23) 0.028 (0.72) 0.063 (1.60) 0.047 (1.20) 0.200 NOM. (5.08) Mounting Pad Layout 0.420 (10.66) MIN. 0.339 (8.60) 0.323 (8.20) 0.276 (7.00) 0.260 (6.60) 0.330 REF. (8.38) 0.194 NOM. (4.93) 0.604 (15.33) 0.525 (13.33) 0.120 (3.05) REF. 0.080 (2.03) MIN. 0.105 (2.67) 0.095 (2.41) Revision: 08-Oct-2021 Document Number: 98246 4 For technical questions within your region: DiodesAmericas@vishay.com, DiodesAsia@vishay.com, DiodesEurope@vishay.com THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000 Legal Disclaimer Notice www.vishay.com Vishay Disclaimer ALL PRODUCT, PRODUCT SPECIFICATIONS AND DATA ARE SUBJECT TO CHANGE WITHOUT NOTICE TO IMPROVE RELIABILITY, FUNCTION OR DESIGN OR OTHERWISE. Vishay Intertechnology, Inc., its affiliates, agents, and employees, and all persons acting on its or their behalf (collectively, “Vishay”), disclaim any and all liability for any errors, inaccuracies or incompleteness contained in any datasheet or in any other disclosure relating to any product. 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ALL RIGHTS RESERVED Revision: 01-Jan-2023 1 Document Number: 91000