V2F22-M3/H

V2F22 www.vishay.com Vishay General Semiconductor Surface-Mount TMBS® (Trench MOS Barrier Schottky) Rectifier FEATURES eSMP® Series • Trench MOS Schottky technology Available • Low profile package • Ideal for automated placement • Low forward voltage drop, low power losses Top view • Meets MSL level 1, per LF maximum peak of 260 °C Bottom view • Wave and reflow solderable SMF (DO-219AB) Cathode J-STD-020, • AEC-Q101 qualified available - Automotive ordering code: base P/NHM3 Anode • Compatible to SOD-123W package case outline • Material categorization: for definitions of compliance please see www.vishay.com/doc?99912 LINKS TO ADDITIONAL RESOURCES 3D 3D TYPICAL APPLICATIONS 3D Models For use in high frequency inverters, freewheeling, DC/DC converters, and polarity protection in commercial, industrial, and automotive applications. PRIMARY CHARACTERISTICS IF(AV) 2.0 A VRRM 200 V IFSM 60 A VF at IF = 2 A (TA = 125 °C) 0.64 V TJ max. 175 °C Package SMF (DO-219AB) Circuit configuration Single MECHANICAL DATA Case: SMF (DO-219AB) Molding compound meets UL 94 V-0 flammability rating Base P/N-M3 - halogen-free, RoHS-compliant Base P/NHM3_X - halogen-free, RoHS-compliant, and AEC-Q101 qualified (“_X” denotes revision code e.g. A, B,.....) Terminals: matte tin plated leads, solderable per J-STD-002 and JESD 22-B102 M3 and HM3 suffix meets JESD 201 class 2 whisker test Polarity: color band denotes the cathode end MAXIMUM RATINGS (TA = 25 °C unless otherwise noted) PARAMETER SYMBOL Device marking code Maximum repetitive peak reverse voltage V2F22 UNIT V2D VRRM 200 V VDC 160 V 2.0 A IFSM 60 A Operating junction temperature range TJ (2) -40 to +175 Storage temperature range TSTG -55 to +175 Maximum DC reverse voltage Maximum average forward rectified current (fig.1) Peak forward surge current 8.3 ms single half sine-wave superimposed on rated load IF(AV) (1) °C Notes (1) Free air, mounted on recommended copper pad area (2) The heat generated must be less than the thermal conductivity from junction-to-ambient: dP /dT < 1/R D J θJA Revision: 12-Apr-2023 Document Number: 87475 1 For technical questions within your region: DiodesAmericas@vishay.com, DiodesAsia@vishay.com, DiodesEurope@vishay.com THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000 V2F22 www.vishay.com Vishay General Semiconductor ELECTRICAL CHARACTERISTICS (TA = 25 °C unless otherwise noted) PARAMETER TEST CONDITIONS IF = 1.0 A Instantaneous forward voltage TA = 25 °C IF = 2.0 A VF (1) IF = 1.0 A TA = 125 °C IF = 2.0 A TA = 25 °C VR = 160 V TA = 125 °C Reverse current TA = 25 °C VR = 200 V Typical junction capacitance SYMBOL IR (2) TA = 125 °C 4.0 V, 1 MHz CJ TYP. MAX. 0.72 - 0.79 0.87 0.56 - 0.64 0.72 0.3 - 300 - - 60 700 3500 160 - UNIT V μA pF Notes (1) Pulse test: 300 μs pulse width, 1 % duty cycle (2) Pulse test: Pulse width ≤ 5 ms THERMAL CHARACTERISTICS (TA = 25 °c unless otherwise noted) PARAMETER Typical thermal resistance SYMBOL V2F22 RθJA (1)(2) 125 RθJM (3) 26 UNIT °C/W Notes (1) The heat generated must be less than the thermal conductivity from junction-to-ambient: dP /dT < 1/R D J θJA (2) Free air, mounted on recommended copper pad area; thermal resistance R θJA - junction to ambient (3) Mounted on recommended copper pad area; thermal resistance R θJM - junction to mount ORDERING INFORMATION (Example) PREFERRED P/N UNIT WEIGHT (g) PREFERRED PACKAGE CODE BASE QUANTITY DELIVERY MODE V2F22-M3/H 0.015 H 3000 7" diameter plastic tape and reel V2F22-M3/I 0.015 I 10 000 13" diameter plastic tape and reel V2F22HM3_A/H (1) 0.015 H 3000 7" diameter plastic tape and reel V2F22HM3_A/I (1) 0.015 I 10 000 13" diameter plastic tape and reel Note AEC-Q101 qualified (1) Revision: 12-Apr-2023 Document Number: 87475 2 For technical questions within your region: DiodesAmericas@vishay.com, DiodesAsia@vishay.com, DiodesEurope@vishay.com THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000 V2F22 www.vishay.com Vishay General Semiconductor RATINGS AND CHARACTERISTICS CURVES (TA = 25 °C unless otherwise noted) Axis Title Axis Title 2 1.8 RthJA = 125 °C/W 1.6 1000 1.4 1.2 1 0.8 100 0.6 0.4 TM measured at cathode terminal mount typical values 0.2 0 0 25 50 75 100 150 1 TJ = 150 °C TJ = 125 °C 0.1 0.001 0.00001 TJ = -40 °C 10 20 40 60 80 100 Mount Temperature (°C) Percent of Rated Peak Reverse Voltage (%) Fig. 1 - Maximum Forward Current Derating Curve Fig. 4 - Typical Reverse Leakage Characteristics Axis Title Axis Title D = 0.3 1000 D = 0.2 D = 1.0 1st line 2nd line 1.2 D = 0.1 1.0 0.8 100 0.6 T 0.4 0.2 D = tp/T 100 1000 10 100 1st line 2nd line 1.4 2nd line Junction Capacitance (pF) TJ = 25 °C f = 1.0 MHz Vsig = 50 mVp-p D = 0.8 D = 0.5 1.6 10000 1000 10000 1.8 2nd line Average Power Loss (W) 100 TJ = 25 °C 0.0001 175 2.0 tp 1 10 0 0 0.2 0.4 0.6 0.8 1 1.2 1.4 1.6 1.8 2 2.2 2.4 0.1 1 10 100 10 1000 Average Forward Current (A) Reverse Voltage (V) Fig. 2 - Average Power Loss Characteristics Fig. 5 - Typical Junction Capacitance Axis Title Axis Title TJ = 150 °C 1000 TJ = 125 °C 1 100 TJ = 100 °C TJ = 25 °C TJ = -40 °C 0.1 0 0.2 0.4 0.6 0.8 1.0 1.2 10 1.4 1.6 2nd line Transient Thermal Impedance (°C/W) TJ = 175 °C 10000 1000 10000 Junction to ambient 100 1000 10 100 1st line 2nd line 10 2nd line Instantaneous Forward Current (A) 1000 TJ = 100 °C 0.01 0.000001 10 125 TJ = 175 °C 1st line 2nd line RthJM = 26.0 °C/W line Current (mA) Instantaneous 2nd Reverse 2.2 10000 10 10000 1st line 2nd line 2nd line Average Forward Rectified Current (A) 2.4 1 0.01 10 0.1 1 10 100 Instantaneous Forward Voltage (V) t - Pulse Duration (s) Fig. 3 - Typical Instantaneous Forward Characteristics Fig. 6 - Typical Transient Thermal Impedance Revision: 12-Apr-2023 Document Number: 87475 3 For technical questions within your region: DiodesAmericas@vishay.com, DiodesAsia@vishay.com, DiodesEurope@vishay.com THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000 V2F22 www.vishay.com Vishay General Semiconductor PACKAGE OUTLINE DIMENSIONS in millimeters (inches) 0.85 (0.033) 0 (0.000) 0.1 (0.004) 5 5 0.1 (0.003) 1.7 (0.067) Detail Z enlarged 1.2 (0.047) 0.8 (0.031) 0.25 (0.010) 1.9 (0.075) 0.35 (0.014) 1.08 (0.043) 2.9 (0.114) 0.88 (0.035) 2.7 (0.106) 3.9 (0.154) 3.5 (0.138) Foot print recommendation: Created - Date: 15. February 2005 Rev. 3 - Date: 13. March 2007 Document no.:S8-V-3915.01-001 (4) 1.3 (0.051) 1.4 (0.055) 1.3 (0.051) 2.9 (0.114) 17247 Revision: 12-Apr-2023 Document Number: 87475 4 For technical questions within your region: DiodesAmericas@vishay.com, DiodesAsia@vishay.com, DiodesEurope@vishay.com THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. 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