V30100S-E3, VF30100S-E3, VB30100S-E3, VI30100S-E3
www.vishay.com
Vishay General Semiconductor
High Voltage Trench MOS Barrier Schottky Rectifier
Ultra Low VF = 0.39 V at IF = 5 A
FEATURES
TMBS ®
TO-220AB
ITO-220AB
• Trench MOS Schottky technology
• Low forward voltage drop, low power losses
• High efficiency operation
• Low thermal resistance
3
2
1
V30100S
1
VF30100S
PIN 1
PIN 2
PIN 1
PIN 3
CASE
PIN 3
D2PAK (TO-263AB)
• Meets MSL level 1, per J-STD-020, LF maximum
peak of 245 °C (for TO-263AB package)
3
2
• Solder bath temperature 275 °C maximum, 10 s, per
JESD 22-B106 (for TO-220AB, ITO-220AB, and
TO-262AA package)
PIN 2
• Material categorization: for definitions of compliance
please see www.vishay.com/doc?99912
TO-262AA
K
K
TYPICAL APPLICATIONS
For use in high frequency converters, switching power
supplies, freewheeling diodes, OR-ing diode, DC/DC
converters and reverse battery protection.
A
NC
VB30100S
NC
VI30100S
K
HEATSINK
A
DESIGN SUPPORT TOOLS
1
PIN 1
PIN 2
PIN 3
K
2
3
MECHANICAL DATA
Case: TO-220AB, ITO-220AB, D2PAK (TO-263AB), and
TO-262AA
Molding compound meets UL 94 V-0 flammability rating
Base P/N-E3 - RoHS-compliant, commercial grade
click logo to get started
Models
Terminals: matte tin plated leads, solderable
J-STD-002 and JESD 22-B102
E3 suffix meets JESD 201 class 1A whisker test
Available
PRIMARY CHARACTERISTICS
IF(AV)
Polarity: as marked
Mounting Torque: 10 in-lbs maximum
30 A
VRRM
100 V
IFSM
250 A
VF at IF = 30 A
0.69 V
TJ max.
150 °C
Package
TO-220AB, ITO-220AB,
D2PAK (TO-263AB),TO-262AA
Circuit configuration
Single
per
MAXIMUM RATINGS (TA = 25 °C unless otherwise noted)
PARAMETER
SYMBOL
V30100S
VF30100S
VB30100S
VI30100S
UNIT
Maximum repetitive peak reverse voltage
VRRM
100
V
Maximum average forward rectified current (fig. 1)
IF(AV)
30
A
Peak forward surge current 8.3 ms single half
sine-wave superimposed on rated load
IFSM
250
A
Non-repetitive avalanche energy at TJ = 25 °C, L = 90 mH
EAS
230
mJ
Peak repetitive reverse current
at tp = 2 μs, 1 kHz, TJ = 38 °C ± 2 °C
IRRM
1.0
A
Voltage rate of change (rated VR)
dV/dt
10 000
V/μs
VAC
1500
V
TJ, TSTG
-40 to +150
°C
Isolation voltage (ITO-220AB only) from terminal to heatsink
t = 1 min
Operating junction and storage temperature range
Revision: 18-Jun-2018
Document Number: 88941
1
For technical questions within your region: DiodesAmericas@vishay.com, DiodesAsia@vishay.com, DiodesEurope@vishay.com
THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT
ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000
V30100S-E3, VF30100S-E3, VB30100S-E3, VI30100S-E3
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Vishay General Semiconductor
ELECTRICAL CHARACTERISTICS (TA = 25 °C unless otherwise noted)
PARAMETER
TEST CONDITIONS
Breakdown voltage
IR = 10 mA
TA = 25 °C
SYMBOL
TYP.
MAX.
UNIT
VBR
105 (minimum)
-
V
IF = 5 A
IF = 10 A
Instantaneous forward voltage
TA = 25 °C
IF = 30 A
VF (1)
IF = 5 A
TA = 125 °C
IF = 10 A
IF = 30 A
VR = 70 V
Reverse current
-
0.80
0.91
0.39
-
0.49
-
0.69
0.78
V
TA = 25 °C
27
-
μA
TA = 125 °C
11
-
mA
70
1000
μA
23
45
mA
TA = 25 °C
VR = 100 V
0.47
0.55
IR (2)
TA = 125 °C
Notes
(1) Pulse test: 300 μs pulse width, 1 % duty cycle
(2) Pulse test: Pulse width 40 ms
THERMAL CHARACTERISTICS (TA = 25 °C unless otherwise noted)
PARAMETER
SYMBOL
V30100S
VF30100S
VB30100S
VI30100S
UNIT
RJC
2.0
4.0
2.0
2.0
°C/W
Typical thermal resistance
ORDERING INFORMATION (Example)
PACKAGE
PREFERRED P/N
UNIT WEIGHT (g)
PACKAGE CODE
BASE QUANTITY
DELIVERY MODE
TO-220AB
V30100S-E3/4W
1.875
4W
50/tube
Tube
ITO-220AB
VF30100S-E3/4W
1.805
4W
50/tube
Tube
TO-263AB
VB30100S-E3/4W
1.380
4W
50/tube
Tube
TO-263AB
VB30100S-E3/8W
1.380
8W
800/reel
Tape and reel
TO-262AA
VI30100S-E3/4W
1.455
4W
50/tube
Tube
RATINGS AND CHARACTERISTICS CURVES (TA = 25 °C unless otherwise noted)
32
35
D = 0.5 D = 0.8
30
28
V(B,I)30100S
Average Power Loss (W)
Average Forward Current (A)
Resistive or Inductive Load
25
VF30100S
20
15
10
Mounted on Specific Heatsink
5
D = 0.3
D = 0.2
24
D = 1.0
D = 0.1
20
16
12
T
8
4
D = tp/T
tp
0
0
0
25
50
75
100
125
150
0
4
8
12
16
20
24
28
32
36
Case Temperature (°C)
Average Forward Current (A)
Fig. 1 - Forward Current Derating Curve
Fig. 2 - Forward Power Loss Characteristics
Revision: 18-Jun-2018
Document Number: 88941
2
For technical questions within your region: DiodesAmericas@vishay.com, DiodesAsia@vishay.com, DiodesEurope@vishay.com
THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT
ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000
V30100S-E3, VF30100S-E3, VB30100S-E3, VI30100S-E3
www.vishay.com
Vishay General Semiconductor
10
Transient Thermal Impedance (°C/W)
Instantaneous Forward Current (A)
100
TA = 150 °C
10
TA = 125 °C
TA = 25 °C
1
0.1
0
0.2
0.4
0.6
0.8
1.0
0.1
0.01
V(B,I)30100S
1.2
0.1
1
10
100
Instantaneous Forward Voltage (V)
t - Pulse Duration (s)
Fig. 3 - Typical Instantaneous Forward Characteristics
Fig. 6 - Typical Transient Thermal Impedance
10
Transient Thermal Impedance (°C/W)
Instantaneous Reverse Current (mA)
1
0.001
0.01
1000
100
TA = 150 °C
TA = 125 °C
10
1
0.1
TA = 25 °C
0.01
10
20
30
40
50
60
70
80
90
100
VF30100S
0.1
1
10
100
Percent of Rated Peak Reverse Voltage (%)
t - Pulse Duration (s)
Fig. 4 - Typical Reverse Characteristics
Fig. 7 - Typical Transient Thermal Impedance
10 000
1000
100
0.1
Junction to Case
1
0.01
0.001
Junction Capacitance (pF)
Junction to Case
1
10
Reverse Voltage (V)
100
Fig. 5 - Typical Junction Capacitance
Revision: 18-Jun-2018
Document Number: 88941
3
For technical questions within your region: DiodesAmericas@vishay.com, DiodesAsia@vishay.com, DiodesEurope@vishay.com
THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT
ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000
V30100S-E3, VF30100S-E3, VB30100S-E3, VI30100S-E3
www.vishay.com
Vishay General Semiconductor
PACKAGE OUTLINE DIMENSIONS in inches (millimeters)
TO-220AB
0.415 (10.54)
0.380 (9.65)
0.185 (4.70)
0.175 (4.44)
0.161 (4.08)
0.139 (3.53)
0.055 (1.39)
0.045 (1.14)
0.113 (2.87)
0.103 (2.62)
1
PIN
2
0.635 (16.13)
0.625 (15.87)
3
0.160 (4.06)
0.140 (3.56)
0.350 (8.89)
0.330 (8.38)
1.148 (29.16)
1.118 (28.40)
0.110 (2.79)
0.100 (2.54)
0.057 (1.45)
0.045 (1.14)
0.104 (2.65)
0.096 (2.45)
0.603 (15.32)
0.573 (14.55)
0.560 (14.22)
0.530 (13.46)
0.035 (0.90)
0.028 (0.70)
0.205 (5.20)
0.195 (4.95)
0.022 (0.56)
0.014 (0.36)
Revision: 18-Jun-2018
Document Number: 88941
4
For technical questions within your region: DiodesAmericas@vishay.com, DiodesAsia@vishay.com, DiodesEurope@vishay.com
THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT
ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000
V30100S-E3, VF30100S-E3, VB30100S-E3, VI30100S-E3
www.vishay.com
Vishay General Semiconductor
TO-262AA
0.411 (10.45)
0.380 (9.65)
0.950 (24.13)
0.920 (23.37)
1
PIN
2 3
0.185 (4.70)
0.175 (4.44)
0.055 (1.40)
0.047 (1.19)
0.055 (1.40)
0.045 (1.14)
0.401 (10.19)
0.381 (9.68)
0.350 (8.89)
0.330 (8.38)
0.510 (12.95)
0.470 (11.94)
0.160 (4.06)
0.140 (3.56)
0.110 (2.79)
0.100 (2.54)
0.057 (1.45)
0.045 (1.14)
0.104 (2.65)
0.096 (2.45)
0.560 (14.22)
0.530 (13.46)
0.035 (0.90)
0.028 (0.70)
0.205 (5.20)
0.195 (4.95)
D2PAK (TO-263AB)
0.411 (10.45)
0.380 (9.65)
0.190 (4.83)
0.160 (4.06)
0.245 (6.22)
MIN.
0.022 (0.56)
0.014 (0.35)
Mounting Pad Layout
0.42 (10.66) MIN.
0.055 (1.40)
0.045 (1.14)
K
0.33 (8.38) MIN.
0.360 (9.14)
0.320 (8.13)
NC
K
A
0.624 (15.85)
0.591 (15.00)
0 to 0.01 (0 to 0.254)
0.110 (2.79)
0.090 (2.29)
0.021 (0.53)
0.014 (0.36)
0.037 (0.940)
0.027 (0.686)
0.105 (2.67)
0.095 (2.41)
0.055 (1.40)
0.047 (1.19)
0.205 (5.20)
0.195 (4.95)
0.140 (3.56)
0.110 (2.79)
0.670 (17.02)
0.591 (15.00)
0.15 (3.81) MIN.
0.08 (2.032) MIN.
0.105 (2.67)
0.095 (2.41)
Revision: 18-Jun-2018
Document Number: 88941
5
For technical questions within your region: DiodesAmericas@vishay.com, DiodesAsia@vishay.com, DiodesEurope@vishay.com
THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT
ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000
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Disclaimer
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Revision: 01-Jan-2022
1
Document Number: 91000