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V30120S-E3/4W

V30120S-E3/4W

  • 厂商:

    TFUNK(威世)

  • 封装:

    TO-220AB-3

  • 描述:

    DIODE SCHOTTKY 120V 30A TO220AB

  • 数据手册
  • 价格&库存
V30120S-E3/4W 数据手册
V30120S-E3, VF30120S-E3, VB30120S-E3, VI30120S-E3 www.vishay.com Vishay General Semiconductor High Voltage Trench MOS Barrier Schottky Rectifier Ultra Low VF = 0.43 V at IF = 5 A FEATURES TMBS ® TO-220AB ITO-220AB • Trench MOS Schottky technology • Low forward voltage drop, low power losses • High efficiency operation 2 3 1 V30120S PIN 1 PIN 2 PIN 1 PIN 3 CASE PIN 3 D2PAK (TO-263AB) 2 1 VF30120S 3 PIN 2 • Meets MSL level 1, per J-STD-020, LF maximum peak of 245 °C (for TO-263AB package) • Solder bath temperature 275 °C maximum, 10 s, per JESD 22-B106 (for TO-220AB, ITO-220AB, and TO-262AA package) • Material categorization: for definitions of compliance please see www.vishay.com/doc?99912 TO-262AA K TYPICAL APPLICATIONS K For use in high frequency converters, switching power supplies, freewheeling diodes, OR-ing diode, DC/DC converters and reverse battery protection. A NC VB30120S NC VI30120S K HEATSINK A 1 DESIGN SUPPORT TOOLS PIN 1 PIN 2 PIN 3 K 2 3 click logo to get started MECHANICAL DATA Case: TO-220AB, ITO-220AB, D2PAK (TO-263AB), and TO-262AA Molding compound meets UL 94 V-0 flammability rating Base P/N-E3 - RoHS-compliant, commercial grade Terminals: matte tin plated leads, solderable J-STD-002 and JESD 22-B102 E3 suffix meets JESD 201 class 1A whisker test Models Available per Polarity: as marked PRIMARY CHARACTERISTICS Mounting Torque: 10 in-lbs maximum IF(AV) 30 A VRRM 120 V IFSM 300 A VF at IF = 30 A 0.74 V TJ max. 150 °C Package TO-220AB, ITO-220AB, D2PAK (TO-263AB), TO-262AA Circuit configuration Single MAXIMUM RATINGS (TA = 25 °C unless otherwise noted) PARAMETER SYMBOL V30120S VF30120S VB30120S VI30120S UNIT Maximum repetitive peak reverse voltage VRRM 120 V Maximum average forward rectified current (fig. 1) IF(AV) 30 A Peak forward surge current 8.3 ms single half sine-wave superimposed on rated load per diode IFSM 300 A Non-repetitive avalanche energy at TJ = 25 °C, L = 100 mH EAS 180 mJ Peak repetitive reverse current at tp = 2 μs, 1 kHz, TJ = 38 °C ± 2 °C IRRM 0.5 A Voltage rate of change (rated VR) dV/dt 10 000 V/μs Isolation voltage (ITO-220AB only) from terminal to heatsink t = 1 min Operating junction and storage temperature range VAC 1500 V TJ, TSTG -40 to +150 °C Revision: 18-Jun-2018 Document Number: 88974 1 For technical questions within your region: DiodesAmericas@vishay.com, DiodesAsia@vishay.com, DiodesEurope@vishay.com THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000 V30120S-E3, VF30120S-E3, VB30120S-E3, VI30120S-E3 www.vishay.com Vishay General Semiconductor ELECTRICAL CHARACTERISTICS (TA = 25 °C unless otherwise noted) PARAMETER TEST CONDITIONS SYMBOL IF = 5 A IF = 15 A Instantaneous forward voltage per diode (1) TA = 25 °C IF = 30 A VF IF = 5 A IF = 15 A TA = 125 °C IF = 30 A VR = 90 V Reverse current per diode (2) VR = 120 V TYP. MAX. 0.50 - 0.70 - 0.99 1.10 0.43 - 0.60 - 0.74 0.82 UNIT V TA = 25 °C 18 - μA TA = 125 °C 12 - mA - 500 μA 22 35 mA IR TA = 25 °C TA = 125 °C Notes (1) Pulse test: 300 μs pulse width, 1 % duty cycle (2) Pulse test: Pulse width  40 ms THERMAL CHARACTERISTICS (TA = 25 °C unless otherwise noted) PARAMETER SYMBOL V30120S VF30120S VB30120S VI30120S UNIT RJC 1.6 4.0 1.6 1.6 °C/W Typical thermal resistance per diode ORDERING INFORMATION (Example) PACKAGE UNIT WEIGHT (g) PACKAGE CODE BASE QUANTITY DELIVERY MODE TO-220AB V30120S-E3/4W PREFERRED P/N 1.88 4W 50/tube Tube ITO-220AB VF30120S-E3/4W 1.75 4W 50/tube Tube TO-263AB VB30120S-E3/4W 1.39 4W 50/tube Tube TO-263AB VB30120S-E3/8W 1.39 8W 800/reel Tape and reel TO-262AA VI30120S-E3/4W 1.46 4W 50/tube Tube RATINGS AND CHARACTERISTICS CURVES (TA = 25 °C unless otherwise noted) 30 Resistive or Inductive Load D = 0.5 35 V(B,I)30120S Average Power Loss (W) Average Forward Rectified Current (A) 40 30 25 VF30120S 20 15 10 D = 0.3 20 D = 0.2 D = 1.0 15 D = 0.1 T 10 5 5 D = 0.8 25 D = tp/T tp Mounted on Specific Heatsink 0 0 0 25 50 75 100 125 150 175 0 5 10 15 20 25 30 35 Case Temperature (°C) Average Forward Current (A) Fig. 1 - Forward Current Derating Curve Fig. 2 - Forward Power Loss Characteristics Per Diode Revision: 18-Jun-2018 Document Number: 88974 2 For technical questions within your region: DiodesAmericas@vishay.com, DiodesAsia@vishay.com, DiodesEurope@vishay.com THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000 V30120S-E3, VF30120S-E3, VB30120S-E3, VI30120S-E3 www.vishay.com Vishay General Semiconductor 10 Transient Thermal Impedance (°C/W) Instantaneous Forward Current (A) 100 TA = 150 °C TA = 125 °C 10 TA = 100 °C 1 TA = 25 °C 0.2 0.4 0.6 0.8 1.0 1.2 1 V(B,I)30120S 0.1 0.01 0.1 0 Junction to Case 1.4 0.1 1 10 100 Instantaneous Forward Voltage (V) t - Pulse Duration (s) Fig. 3 - Typical Instantaneous Forward Characteristics Per Diode Fig. 6 - Typical Transient Thermal Impedance Per Diode 10 Transient Thermal Impedance (°C/W) Instantaneous Reverse Current (mA) 100 TA = 150 °C 10 TA = 125 °C 1 TA = 100 °C 0.1 TA = 25 °C 0.01 0.001 10 20 30 40 50 60 70 80 90 100 Junction to Case 1 VF30120S 0.1 0.01 0.1 1 10 100 Percent of Rated Peak Reverse Voltage (%) t - Pulse Duration (s) Fig. 4 - Typical Reverse Characteristics Per Diode Fig. 7 - Typical Transient Thermal Impedance Per Diode Junction Capacitance (pF) 10 000 TJ = 25 °C f = 1.0 MHz Vsig = 50 mVp-p 1000 100 10 0.1 1 10 100 Reverse Voltage (V) Fig. 5 - Typical Junction Capacitance Per Diode Revision: 18-Jun-2018 Document Number: 88974 3 For technical questions within your region: DiodesAmericas@vishay.com, DiodesAsia@vishay.com, DiodesEurope@vishay.com THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000 V30120S-E3, VF30120S-E3, VB30120S-E3, VI30120S-E3 www.vishay.com Vishay General Semiconductor PACKAGE OUTLINE DIMENSIONS in inches (millimeters) TO-220AB 0.415 (10.54) 0.380 (9.65) 0.185 (4.70) 0.175 (4.44) 0.161 (4.08) 0.139 (3.53) 0.055 (1.39) 0.045 (1.14) 0.113 (2.87) 0.103 (2.62) 1 PIN 2 0.635 (16.13) 0.625 (15.87) 3 0.160 (4.06) 0.140 (3.56) 0.350 (8.89) 0.330 (8.38) 1.148 (29.16) 1.118 (28.40) 0.110 (2.79) 0.100 (2.54) 0.057 (1.45) 0.045 (1.14) 0.104 (2.65) 0.096 (2.45) 0.603 (15.32) 0.573 (14.55) 0.560 (14.22) 0.530 (13.46) 0.035 (0.90) 0.028 (0.70) 0.205 (5.20) 0.195 (4.95) 0.022 (0.56) 0.014 (0.36) Revision: 18-Jun-2018 Document Number: 88974 4 For technical questions within your region: DiodesAmericas@vishay.com, DiodesAsia@vishay.com, DiodesEurope@vishay.com THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000 V30120S-E3, VF30120S-E3, VB30120S-E3, VI30120S-E3 www.vishay.com Vishay General Semiconductor TO-262AA 0.411 (10.45) 0.380 (9.65) 0.950 (24.13) 0.920 (23.37) 1 PIN 2 3 0.185 (4.70) 0.175 (4.44) 0.055 (1.40) 0.047 (1.19) 0.055 (1.40) 0.045 (1.14) 0.401 (10.19) 0.381 (9.68) 0.350 (8.89) 0.330 (8.38) 0.510 (12.95) 0.470 (11.94) 0.160 (4.06) 0.140 (3.56) 0.110 (2.79) 0.100 (2.54) 0.057 (1.45) 0.045 (1.14) 0.104 (2.65) 0.096 (2.45) 0.560 (14.22) 0.530 (13.46) 0.035 (0.90) 0.028 (0.70) 0.205 (5.20) 0.195 (4.95) D2PAK (TO-263AB) 0.411 (10.45) 0.380 (9.65) 0.190 (4.83) 0.160 (4.06) 0.245 (6.22) MIN. 0.022 (0.56) 0.014 (0.35) Mounting Pad Layout 0.42 (10.66) MIN. 0.055 (1.40) 0.045 (1.14) K 0.33 (8.38) MIN. 0.360 (9.14) 0.320 (8.13) NC K A 0.624 (15.85) 0.591 (15.00) 0 to 0.01 (0 to 0.254) 0.110 (2.79) 0.090 (2.29) 0.021 (0.53) 0.014 (0.36) 0.037 (0.940) 0.027 (0.686) 0.105 (2.67) 0.095 (2.41) 0.055 (1.40) 0.047 (1.19) 0.205 (5.20) 0.195 (4.95) 0.140 (3.56) 0.110 (2.79) 0.670 (17.02) 0.591 (15.00) 0.15 (3.81) MIN. 0.08 (2.032) MIN. 0.105 (2.67) 0.095 (2.41) Revision: 18-Jun-2018 Document Number: 88974 5 For technical questions within your region: DiodesAmericas@vishay.com, DiodesAsia@vishay.com, DiodesEurope@vishay.com THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000 Legal Disclaimer Notice www.vishay.com Vishay Disclaimer ALL PRODUCT, PRODUCT SPECIFICATIONS AND DATA ARE SUBJECT TO CHANGE WITHOUT NOTICE TO IMPROVE RELIABILITY, FUNCTION OR DESIGN OR OTHERWISE. Vishay Intertechnology, Inc., its affiliates, agents, and employees, and all persons acting on its or their behalf (collectively, “Vishay”), disclaim any and all liability for any errors, inaccuracies or incompleteness contained in any datasheet or in any other disclosure relating to any product. Vishay makes no warranty, representation or guarantee regarding the suitability of the products for any particular purpose or the continuing production of any product. To the maximum extent permitted by applicable law, Vishay disclaims (i) any and all liability arising out of the application or use of any product, (ii) any and all liability, including without limitation special, consequential or incidental damages, and (iii) any and all implied warranties, including warranties of fitness for particular purpose, non-infringement and merchantability. Statements regarding the suitability of products for certain types of applications are based on Vishay's knowledge of typical requirements that are often placed on Vishay products in generic applications. Such statements are not binding statements about the suitability of products for a particular application. It is the customer's responsibility to validate that a particular product with the properties described in the product specification is suitable for use in a particular application. Parameters provided in datasheets and / or specifications may vary in different applications and performance may vary over time. All operating parameters, including typical parameters, must be validated for each customer application by the customer's technical experts. Product specifications do not expand or otherwise modify Vishay's terms and conditions of purchase, including but not limited to the warranty expressed therein. Hyperlinks included in this datasheet may direct users to third-party websites. These links are provided as a convenience and for informational purposes only. Inclusion of these hyperlinks does not constitute an endorsement or an approval by Vishay of any of the products, services or opinions of the corporation, organization or individual associated with the third-party website. Vishay disclaims any and all liability and bears no responsibility for the accuracy, legality or content of the third-party website or for that of subsequent links. Except as expressly indicated in writing, Vishay products are not designed for use in medical, life-saving, or life-sustaining applications or for any other application in which the failure of the Vishay product could result in personal injury or death. Customers using or selling Vishay products not expressly indicated for use in such applications do so at their own risk. Please contact authorized Vishay personnel to obtain written terms and conditions regarding products designed for such applications. No license, express or implied, by estoppel or otherwise, to any intellectual property rights is granted by this document or by any conduct of Vishay. Product names and markings noted herein may be trademarks of their respective owners. © 2022 VISHAY INTERTECHNOLOGY, INC. ALL RIGHTS RESERVED Revision: 01-Jan-2022 1 Document Number: 91000
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