V60D60CHM3/I

V60D60C www.vishay.com Vishay General Semiconductor Dual Low-Voltage TMBS® (Trench MOS Barrier Schottky) Rectifier Ultra Low VF = 0.30 V at IF = 5.0 A FEATURES eSMP® Series SMPD (TO-263AC) • Trench MOS Schottky technology Available • Very low profile - typical height of 1.7 mm • Ideal for automated placement K • Low forward voltage drop, low power losses • High efficiency operation 1 • Meets MSL level 1, per LF maximum peak of 260 °C 2 Top View Bottom View J-STD-020, • AEC-Q101 qualified available: - Automotive ordering code: base P/NHM3 • Material categorization: for definitions of compliance please see www.vishay.com/doc?99912 Anode 1 K Anode 2 Cathode TYPICAL APPLICATIONS DESIGN SUPPORT TOOLS AVAILABLE 3D 3D 3D Models PRIMARY CHARACTERISTICS For use in high frequency DC/DC converters, switching power supplies, freewheeling diodes, OR-ing diode, and reverse battery protection in commercial, industrial, and automotive application. MECHANICAL DATA IF(AV) 2 x 30 A VRRM 60 V IFSM 320 A VF at IF = 30 A (TA = 125 °C) 0.50 V TJ max. 150 °C Package SMPD (TO-263AC) Circuit configuration Common cathode Case: SMPD (TO-263AC) Molding compound meets UL 94 V-0 flammability rating Base P/N-M3 - halogen-free, RoHS-compliant Base P/NHM3 - halogen-free, RoHS-compliant, and AEC-Q101 qualified Terminals: matte tin plated leads, solderable per J-STD-002 and JESD 22-B102 M3 and HM3 suffix meet JESD 201 class 2 whisker test Polarity: as marked MAXIMUM RATINGS (TA = 25 °C unless otherwise noted) PARAMETER SYMBOL Device marking code UNIT V60D60C Maximum repetitive peak reverse voltage Maximum average forward rectified current (fig. 1) V60D60C VRRM per device per diode IF(AV) (1) 60 60 30 Peak forward surge current 8.3 ms single half sine-wave superimposed on rated load IFSM 320 Operating junction temperature range TJ (2) -40 to +150 Storage temperature range TSTG -55 to +150 V A A °C Notes (1) Mounted on infinite heatsink (2) The heat generated must be less than the thermal conductivity from junction-to-ambient: dP /dT < 1/R D J JA Revision: 18-Mar-2019 Document Number: 87554 1 For technical questions within your region: DiodesAmericas@vishay.com, DiodesAsia@vishay.com, DiodesEurope@vishay.com THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000 V60D60C www.vishay.com Vishay General Semiconductor ELECTRICAL CHARACTERISTICS (TA = 25 °C unless otherwise noted) PARAMETER TEST CONDITIONS SYMBOL TYP. MAX. 0.41 - IF = 5 A IF = 15 A TA = 25 °C IF = 30 A Instantaneous forward voltage per diode VF (1) IF = 5 A TA = 125 °C IF = 15 A 0.48 - 0.56 0.64 0.3 - 0.39 - 0.5 0.58 IF = 30 A TA = 25 °C VR = 60 V Reverse current per diode Typical junction capacitance - 5 30 80 3550 - IR (2) TA = 125 °C 4.0 V, 1 MHz CJ UNIT V mA pF Notes (1) Pulse test: 300 μs pulse width, 1 % duty cycle (2) Pulse test: Pulse width  5 ms THERMAL CHARACTERISTICS (TA = 25 °C unless otherwise noted) PARAMETER SYMBOL V60D60C RJC (1) 0.8 RJA (2)(3) 45 Typical thermal resistance per device UNIT °C/W Notes (1) Mounted on infinite heatsink (2) The heat generated must be less than the thermal conductivity from junction-to-ambient: dP /dT < 1/R D J JA (3) Free air, without heatsink ORDERING INFORMATION (Example) PREFERRED P/N UNIT WEIGHT (g) PREFERRED PACKAGE CODE BASE QUANTITY DELIVERY MODE V60D60C-M3/I 0.20 I 2000/reel 13" diameter plastic tape and reel V60D60CHM3/I (1) 0.20 I 2000/reel 13" diameter plastic tape and reel Note (1) AEC-Q101 qualified 70 14.0 D = 0.8 RthJC = 0.8 °C/W 60 12.0 Average Power Loss (W) Average Forward Rectified Current (A)  RATINGS AND CHARACTERISTICS CURVES (TA = 25 °C unless otherwise noted) 50 40 30 20 RthJA = 45 °C/W 10 0 D = 0.5 10.0 D = 0.3 D = 1.0 8.0 D = 0.2 6.0 D = 0.1 4.0 T 2.0 D = tp/T tp 25 30 0.0 0 25 50 75 100 125 150 Case Temperature (°C) Fig. 1 - Maximum Forward Current Derating Curve 0 5 10 15 20 35 Average Forward Current (A) Fig. 2 - Average Power Loss Characteristics Revision: 18-Mar-2019 Document Number: 87554 2 For technical questions within your region: DiodesAmericas@vishay.com, DiodesAsia@vishay.com, DiodesEurope@vishay.com THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000 V60D60C www.vishay.com Vishay General Semiconductor Transient Thermal Impedance (°C/W) Instantaneous Forward Current (A) 100 TJ = 150 °C 10 TJ = 125 °C TJ = 100 °C 1 TJ = 25 °C 0.1 TJ = -40 °C 0.01 0 0.1 0.2 0.3 0.4 0.5 0.6 0.7 0.8 100 Junction to ambient 10 1 0.1 0.01 0.1 Instantaneous Forward Voltage (V) 10 100 t - Pulse Duration (s) Fig. 3 - Typical Instantaneous Forward Characteristics Fig. 6 - Typical Transient Thermal Impedance 50 100 10 1 TJ = 125 °C TJ = 100 °C TJ = 150 °C 0.1 0.01 TJ = 25 °C 0.001 0.0001 TJ = -40 °C 0.00001 0.000001 Thermal Resistance (°C/W) Instantaneous Reverse Current (mA) 1 Epoxy printed circuit board FR4 copper thickness = 70 μm 45 40 35 30 25 S (cm2) 20 10 20 30 40 50 60 70 80 90 100 Percent of Rated Peak Reverse Voltage (%) Fig. 4 - Typical Reverse Leakage Characteristics 1 2 3 4 5 6 7 Copper Pad Areas (cm2) 8 9 Fig. 7 - Thermal Resistance Junction-to-Ambient vs. Copper Pad Areas Junction Capacitance (pF) 10 000 TJ = 25 °C f = 1.0 MHz Vsig = 50 mVp-p 1000 100 10 0.1 1 10 100 Reverse Voltage (V) Fig. 5 - Typical Junction Capacitance Revision: 18-Mar-2019 Document Number: 87554 3 For technical questions within your region: DiodesAmericas@vishay.com, DiodesAsia@vishay.com, DiodesEurope@vishay.com THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000 V60D60C www.vishay.com Vishay General Semiconductor PACKAGE OUTLINE DIMENSIONS in inches (millimeters) SMPD (TO-263AC)    5()            WR   WR             120     Mounting Pad Layout 0,1       5()   120   5() 0,1     Revision: 18-Mar-2019 Document Number: 87554 4 For technical questions within your region: DiodesAmericas@vishay.com, DiodesAsia@vishay.com, DiodesEurope@vishay.com THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000 Legal Disclaimer Notice www.vishay.com Vishay Disclaimer ALL PRODUCT, PRODUCT SPECIFICATIONS AND DATA ARE SUBJECT TO CHANGE WITHOUT NOTICE TO IMPROVE RELIABILITY, FUNCTION OR DESIGN OR OTHERWISE. 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Please contact authorized Vishay personnel to obtain written terms and conditions regarding products designed for such applications. No license, express or implied, by estoppel or otherwise, to any intellectual property rights is granted by this document or by any conduct of Vishay. Product names and markings noted herein may be trademarks of their respective owners. © 2023 VISHAY INTERTECHNOLOGY, INC. ALL RIGHTS RESERVED Revision: 01-Jan-2023 1 Document Number: 91000