V8P8HM3_A/I

V8P8 www.vishay.com Vishay General Semiconductor High Current Density Surface Mount TMBS® (Trench MOS Barrier Schottky) Rectifier Ultra Low VF = 0.42 V at IF = 4 A FEATURES eSMP® Series • Very low profile - typical height of 1.1 mm Available • Ideal for automated placement K • Trench MOS Schottky technology • Low forward voltage drop, low power losses 1 • High efficiency operation 2 • Meets MSL level 1, per LF maximum peak of 260 °C SMPC (TO-277A) K Anode 1 Cathode Anode 2 J-STD-020, • AEC-Q101 qualified available - Automotive ordering code; base P/NHM3 • Material categorization: for definitions of compliance please see www.vishay.com/doc?99912 TYPICAL APPLICATIONS ADDITIONAL RESOURCES For use in low voltage high frequency inverters, freewheeling, DC/DC converters, and polarity protection applications. 3D 3D 3D Models MECHANICAL DATA PRIMARY CHARACTERISTICS IF(AV) 8.0 A VRRM 80 V IFSM 140 A VF at IF = 8.0 A (TA = 125 °C) 0.54 V TJ max. 150 °C Package SMPC (TO-277A) Circuit configuration Single Case: SMPC (TO-277A) Molding compound meets UL 94 V-0 flammability rating Base P/N-M3 - halogen-free, RoHS-compliant, and commercial grade Base P/NHM3_X - halogen-free, RoHS-compliant, and AEC-Q101 qualified  (“_X” denotes revision code e.g. A, B,.....) Terminals: matte tin plated leads, solderable per J-STD-002 and JESD 22-B102 M3 suffix meets JESD 201 class 2 whisker test, HM3 suffix meets JESD 201 class 2 whisker test MAXIMUM RATINGS (TA = 25 °C unless otherwise noted) PARAMETER SYMBOL Device marking code Maximum repetitive peak reverse voltage Maximum average forward rectified current (fig. 1) Peak forward surge current 10 ms single half sine-wave superimposed on rated load Voltage rate of change (rated VR) Operating junction and storage temperature range V8P8 UNIT V88 VRRM 80 IF (1) 8.0 IF (2) 4.0 IFSM 140 A dV/dt 10 000 V/μs TJ, TSTG -40 to +150 °C V A Notes (1) Mounted on 30 mm x 30 mm pad areas aluminum PCB (2) Free air, mounted on recommended copper pad area Revision: 18-Dec-2019 Document Number: 87709 1 For technical questions within your region: DiodesAmericas@vishay.com, DiodesAsia@vishay.com, DiodesEurope@vishay.com THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000 V8P8 www.vishay.com Vishay General Semiconductor ELECTRICAL CHARACTERISTICS (TA = 25 °C unless otherwise noted) PARAMETER TEST CONDITIONS IF = 4.0 A TA = 25 °C IF = 8.0 A Instantaneous forward voltage VF (1) IF = 4.0 A TA = 125 °C IF = 8.0 A TA = 25 °C VR = 80 V Reverse current SYMBOL TA = 125 °C IR (2) TYP. MAX. 0.49 - 0.58 0.66 0.42 - 0.54 0.62 - 0.7 8.0 20 UNIT V mA Notes (1) Pulse test: 300 μs pulse width, 1 % duty cycle (2) Pulse test: pulse width  5 ms THERMAL CHARACTERISTICS (TA = 25 °C unless otherwise noted) PARAMETER SYMBOL RJA Typical thermal resistance V8P8 (1)(2) 75 RJM (3) UNIT °C/W 4 Notes (1) The heat generated must be less than the thermal conductivity from junction to ambient: dP /dT < 1/R D J JA (2) Free air mounted on recommended copper pad area; thermal resistance R JA - junction to ambient (3) Mounted on 30 mm x 30 mm aluminum PCB; thermal resistance R JM - junction to mount ORDERING INFORMATION (Example) PREFERRED P/N UNIT WEIGHT (g) PREFERRED PACKAGE CODE BASE QUANTITY DELIVERY MODE 0.10 86A 1500 7" diameter plastic tape and reel V8P8-M3/87A 0.10 87A 6500 13" diameter plastic tape and reel V8P8HM3_A/H (1) 0.10 H 1500 7" diameter plastic tape and reel V8P8HM3_A/I (1) 0.10 I 6500 13" diameter plastic tape and reel V8P8-M3/86A Note (1) AEC-Q101 qualified Revision: 18-Dec-2019 Document Number: 87709 2 For technical questions within your region: DiodesAmericas@vishay.com, DiodesAsia@vishay.com, DiodesEurope@vishay.com THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000 V8P8 www.vishay.com Vishay General Semiconductor RATINGS AND CHARACTERISTICS CURVES (TA = 25 °C unless otherwise noted) 7 6 5 TA = 25 °C, RTJA = 75 °C/W 4 3 2 1 0 0 25 50 75 100 125 10000 TJ = 150 °C 10 TJ = 125 °C 1 1000 TJ = 100 °C 1st line 2nd line TM = 131 °C, RTJM = 4 °C/W 8 100 2nd line Instantaneous Reverse Current (mA) Average Forward Rectified Current (A) Axis Title 9 0.1 0.01 100 TJ = 25 °C 0.001 TJ = -40 °C 0.0001 150 10 20 Mount Temperature (°C) 40 60 80 Percent of Rated Peak Reverse Voltage (%) Fig. 4 - Typical Reverse Leakage Characteristics Per Diode Fig. 1 - Forward Current Derating Curve 10 000 6.0 TJ = 25 °C f = 1.0 MHz Vsig = 50 mVp-p 5.0 Junction Capacitance (pF) D = 0.8 Average Power Loss (W) 100 D = 0.5 D = 0.3 4.0 D = 1.0 D = 0.2 3.0 D = 0.1 2.0 T 1.0 D = tp/T tp 1000 100 10 0.0 0 1 2 3 4 5 6 7 8 0.1 9 1 Average Forward Current (A) 10 100 Reverse Voltage (V) Fig. 5 - Typical Junction Capacitance Fig. 2 - Forward Power Loss Characteristics 2nd line Instantaneous Forward Current (A) 10 10000 1000 TJ = 150 °C TJ = 125 °C 1 TJ = 100 °C 100 TJ = 25 °C TJ = -40 °C 0.1 10 0 0.1 0.2 0.3 0.4 0.5 0.6 0.7 0.8 0.9 1.0 1.1 1.2 Transient Thermal Impedance (°C/W) Axis Title 100 100 Junction to Ambient 10 1 0.01 0.1 1 10 100 Instantaneous Forward Voltage (V) t - Pulse Duration (s) Fig. 3 - Typical Instantaneous Forward Characteristics Fig. 6 - Typical Transient Thermal Impedance Revision: 18-Dec-2019 Document Number: 87709 3 For technical questions within your region: DiodesAmericas@vishay.com, DiodesAsia@vishay.com, DiodesEurope@vishay.com THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000 V8P8 www.vishay.com Vishay General Semiconductor PACKAGE OUTLINE DIMENSIONS in inches (millimeters) SMPC (TO-277A) 0.187 (4.75) 0.175 (4.45) 0.016 (0.40) 0.006 (0.15) K 0.262 (6.65) 0.250 (6.35) 0.242 (6.15) 0.238 (6.05) 2 1 0.047 (1.20) 0.039 (1.00) 0.171 (4.35) 0.167 (4.25) 0.146 (3.70) 0.134 (3.40) Mounting Pad Layout 0.087 (2.20) 0.075 (1.90) 0.189 (4.80) MIN. 0.189 (4.80) 0.173 (4.40) 0.186 (4.72) MIN. 0.268 (6.80) 0.155 (3.94) NOM. 0.030 (0.75) NOM. 0.049 (1.24) 0.037 (0.94) 0.050 (1.27) MIN. 0.084 (2.13) NOM. 0.053 (1.35) 0.041 (1.05) 0.041 (1.04) 0.055 (1.40) MIN. Conform to JEDEC® TO-277A Revision: 18-Dec-2019 Document Number: 87709 4 For technical questions within your region: DiodesAmericas@vishay.com, DiodesAsia@vishay.com, DiodesEurope@vishay.com THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. 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