VBT3080S-M3/4W

VBT3080S-M3 www.vishay.com Vishay General Semiconductor Trench MOS Barrier Schottky Rectifier Ultra Low VF = 0.39 V at IF = 5 A FEATURES TMBS D2PAK ® • Trench MOS Schottky technology • Low forward voltage drop, low power losses (TO-263AB) • High efficiency operation K • Meets MSL level 1, per LF maximum peak of 245 °C A • Material categorization: for definitions of compliance please see www.vishay.com/doc?99912 NC TYPICAL APPLICATIONS VBT3080S NC A K For use in high frequency converters, switching power supplies, freewheeling diodes, OR-ing diode, DC/DC converters, and reverse battery protection. HEATSINK DESIGN SUPPORT TOOLS J-STD-020, click logo to get started MECHANICAL DATA Case: D2PAK (TO-263AB) Molding compound meets UL 94 V-0 flammability rating Base P/N-M3 - halogen-free, RoHS-compliant, and commercial grade Models Available PRIMARY CHARACTERISTICS IF(AV) 30 A VRRM 80 V IFSM 200 A VF at IF = 30 A 0.73 V TJ max. 150 °C Package D2PAK (TO-263AB) Circuit configuration Single Terminals: matte tin plated leads, solderable J-STD-002 and JESD 22-B102 M3 suffix meets JESD 201 class 1A whisker test per Polarity: as marked Mounting Torque: 10 in-lbs maximum     MAXIMUM RATINGS (TA = 25 °C unless otherwise noted) PARAMETER SYMBOL VBT3080S UNIT Maximum repetitive peak reverse voltage VRRM 80 V Maximum average forward rectified current (fig. 1) IF(AV) 30 A Peak forward surge current 8.3 ms single half sine-wave superimposed on rated load IFSM 200 A TJ, TSTG -55 to +150 °C Operating junction and storage temperature range Revision: 02-Jul-2018 Document Number: 87979 1 For technical questions within your region: DiodesAmericas@vishay.com, DiodesAsia@vishay.com, DiodesEurope@vishay.com THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000 VBT3080S-M3 www.vishay.com Vishay General Semiconductor ELECTRICAL CHARACTERISTICS (TA = 25 °C unless otherwise noted) PARAMETER TEST CONDITIONS SYMBOL TYP. MAX. 0.47 - IF = 5 A IF = 15 A TA = 25 °C IF = 30 A Instantaneous forward voltage (1) VF IF = 5 A IF = 15 A TA = 125 °C IF = 30 A Reverse current (2) VR = 80 V TA = 25 °C IR TA = 125 °C 0.61 - 0.82 0.95 0.39 - UNIT V 0.57 - 0.73 0.82 70 1000 μA 23 45 mA Notes (1) Pulse test: 300 μs pulse width, 1 % duty cycle (2) Pulse test: Pulse width  40 ms THERMAL CHARACTERISTICS (TA = 25 °C unless otherwise noted) PARAMETER SYMBOL VBT3080S UNIT RJC 1.5 °C/W Typical thermal resistance RATINGS AND CHARACTERISTICS CURVES (TA = 25 °C unless otherwise noted) 100 Instantaneous Forward Current (A) 35 Average Forward Current (A) Resistive or Inductive Load 30 25 20 15 10 5 Mounted on Specific Heatsink 0 TA = 125 °C 10 TA = 100 °C 1 TA = 25 °C 0.1 0 25 50 75 100 125 150 175 0 0.1 0.2 0.3 0.4 0.5 0.6 0.7 0.8 0.9 1.0 1.1 Case Temperature (°C) Instantaneous Forward Voltage (V) Fig. 1 - Maximum Forward Current Derating Curve Fig. 3 - Typical Instantaneous Forward Characteristics Per Diode D = 0.5 Instantaneous Reverse Current (mA) 30 Average Power Loss (W) TA = 150 °C D = 0.8 D = 0.3 25 D = 0.2 20 D = 1.0 D = 0.1 15 T 10 5 D = tp/T tp 0 0 5 10 15 20 25 30 35 100 TA = 150 °C TA = 125 °C 10 TA = 100 °C 1 0.1 TA = 25 °C 0.01 0.001 20 30 40 50 60 70 80 90 100 Average Forward Current (A) Percent of Rated Peak Reverse Voltage (%) Fig. 2 - Forward Power Loss Characteristics Per Diode Fig. 4 - Typical Reverse Characteristics Per Diode Revision: 02-Jul-2018 Document Number: 87979 2 For technical questions within your region: DiodesAmericas@vishay.com, DiodesAsia@vishay.com, DiodesEurope@vishay.com THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000 VBT3080S-M3 www.vishay.com Transient Thermal Impedance (°C/W) Junction Capacitance (pF) 10 000 Vishay General Semiconductor TJ = 25 °C f = 1.0 MHz Vsig = 50 mVp-p 1000 100 0.1 1 10 100 10 Junction to Case 1 0.1 0.01 0.1 1 10 100 Reverse Voltage (V) t - Pulse Duration (s) Fig. 5 - Typical Junction Capacitance Per Diode Fig. 6 - Typical Transient Thermal Impedance Per Device PACKAGE OUTLINE DIMENSIONS in inches (millimeters) D2PAK (TO-263AB) 0.411 (10.45) 0.380 (9.65) 0.190 (4.83) 0.160 (4.06) 0.245 (6.22) MIN. Mounting Pad Layout 0.42 (10.66) MIN. 0.055 (1.40) 0.045 (1.14) K 0.33 (8.38) MIN. 0.360 (9.14) 0.320 (8.13) NC K A 0.624 (15.85) 0.591 (15.00) 0 to 0.01 (0 to 0.254) 0.110 (2.79) 0.090 (2.29) 0.021 (0.53) 0.014 (0.36) 0.037 (0.940) 0.027 (0.686) 0.105 (2.67) 0.095 (2.41) 0.055 (1.40) 0.047 (1.19) 0.205 (5.20) 0.195 (4.95) 0.140 (3.56) 0.110 (2.79) 0.670 (17.02) 0.591 (15.00) 0.15 (3.81) MIN. 0.08 (2.032) MIN. 0.105 (2.67) 0.095 (2.41) Revision: 02-Jul-2018 Document Number: 87979 3 For technical questions within your region: DiodesAmericas@vishay.com, DiodesAsia@vishay.com, DiodesEurope@vishay.com THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000 Legal Disclaimer Notice www.vishay.com Vishay Disclaimer ALL PRODUCT, PRODUCT SPECIFICATIONS AND DATA ARE SUBJECT TO CHANGE WITHOUT NOTICE TO IMPROVE RELIABILITY, FUNCTION OR DESIGN OR OTHERWISE. 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