VEMD1160X01

VEMD1160X01 www.vishay.com Vishay Semiconductors Silicon PIN Photodiode FEATURES • Package type: surface mount • Package form: 0805 top view • Dimensions (L x W x H in mm): 2 x 1.25 x 0.85 • Radiant sensitive area (in mm2): 0.23 • Daylight blocking filter • AEC-Q101 qualified • High photo sensitivity • High radiant sensitivity • Excellent Ira linearity DESCRIPTION • Fast response times VEMD1160X01 is a high speed and high sensitive PIN photodiode with a highly linear photoresponse. It is a low profile surface mount device (SMD) including the chip with a 0.23 mm2 sensitive area and a daylight blocking filter. • Angle of half sensitivity: ϕ = ± 70° • Floor life: 72 h, MSL 4, according to J-STD-020 • Material categorization: for definitions of compliance please see www.vishay.com/doc?99912 APPLICATIONS • High speed photo detector • Small signal detection • Proximity sensors PRODUCT SUMMARY COMPONENT Ira (μA) ϕ (deg) λ0.1 (nm) VEMD1160X01 1.8 ± 70 700 to 1070 Note • Test conditions see table “Basic Characteristics” ORDERING INFORMATION ORDERING CODE PACKAGING REMARKS PACKAGE FORM VEMD1160X01 Tape and reel MOQ: 3000 pcs, 3000 pcs/reel 0805 top view Note • MOQ: minimum order quantity ABSOLUTE MAXIMUM RATINGS (Tamb = 25 °C, unless otherwise specified) PARAMETER TEST CONDITION Reverse voltage Power dissipation Tamb ≤ 25 °C Junction temperature SYMBOL VALUE VR 20 UNIT V PV 215 mW Tj 110 °C Operating temperature range Tamb -40 to +110 °C Storage temperature range Tstg -40 to +110 °C According to reflow solder profile Fig. 6 Tsd 260 °C According to EIA / JESD 51 RthJA 270 K/W Soldering temperature Thermal resistance junction / ambient Rev. 1.1, 30-Jun-16 Document Number: 84305 1 For technical questions, contact: detectortechsupport@vishay.com THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000 VEMD1160X01 www.vishay.com Vishay Semiconductors BASIC CHARACTERISTICS (Tamb = 25 °C, unless otherwise specified) PARAMETER TEST CONDITION SYMBOL MIN. TYP. MAX. UNIT IF = 50 mA VF - 0.9 1.1 V IR = 100 μA, E = 0 V(BR) 20 - - V VR = 10 V, E = 0 Iro - 0.01 5 nA VR = 0 V, f = 1 MHz, E = 0 CD - 3.8 - pF Forward voltage Breakdown voltage Reverse dark current Diode capacitance VR = 3 V, f = 1 MHz, E = 0 CD - 1.8 - pF Open circuit voltage Ee = 1 mW/cm2, λ = 950 nm Vo - 350 - mV Temperature coefficient of Vo Ee = 1 mW/cm2, λ = 950 nm TKVo - -2.6 - mV/K mW/cm2, λ = 950 nm Short circuit current Ee = 1 Ik - 1.8 - μA Temperature coefficient of Ik Ee = 1 mW/cm2, λ = 835 nm TKIk - 0.1 - %/K Ee = 1 mW/cm2, λ = 950 nm, VR = 5 V Ira 1.4 1.8 3 μA Ee = 1 mW/cm2, λ = 890 nm, VR = 5 V Ira - 2.6 - μA ϕ - ± 70 - deg Wavelength of peak sensitivity λp - 840 - nm Range of spectral bandwidth λ0.1 - 700 to 1070 - nm Reverse light current Angle of half sensitivity Rise time VR = 5 V, RL = 50 Ω, λ = 820 nm tr - 60 - ns Fall time VR = 5 V, RL = 50 Ω, λ = 820 nm tf - 80 - ns BASIC CHARACTERISTICS (Tamb = 25 °C, unless otherwise specified) Basic characteristics graphs to be extended to 110 °C ambient temperatures where applicable. 1.4 VR = 10 V 10 1 0.1 0.01 0.001 0.0001 -40 -20 0 20 40 60 80 100 Tamb - Ambient Temperature (°C) Fig. 1 - Reverse Dark Current vs. Ambient Temperature Rev. 1.1, 30-Jun-16 Ira rel - Relative Reverse Light Current Iro - Reverse Dark Current (nA) 100 VR = 10 V 940 nm 1.2 865 nm 1.0 835 nm 0.8 0.6 -40 -20 0 20 40 60 80 100 Tamb - Ambient Temperature (°C) Fig. 2 - Relative Reverse Light Current vs. Ambient Temperature Document Number: 84305 2 For technical questions, contact: detectortechsupport@vishay.com THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000 VEMD1160X01 www.vishay.com Vishay Semiconductors S(λ)rel - Relative Spectral Sensitivity VR = 5 V, λ = 950 nm 10 1 0.1 0.01 0.01 0.1 1 Ee - Irradiance 1.0 0.8 0.6 0.4 0.2 0 400 10 500 600 700 800 Fig. 3 - Reverse Light Current vs. Irradiance Fig. 6 - Relative Spectral Sensitivity vs. Wavelength 5.0 mW/cm2 2.0 mW/cm2 1.0 mW/cm2 0.5 mW/cm2 1 0.2 mW/cm2 0.1 mW/cm2 0.05 mW/cm2 0.1 0.02 mW/cm2 0.01 mW/cm2 λ = 950 nm 0.01 0.1 1 10 100 Srel - Relative Radiant Sensitivity Ira - Reverse Light Current (μA) 0° 10° 20° 30° 10 mW/cm2 10 900 1000 1100 λ - Wavelength (nm) (mW/cm2) 40° 1.0 0.9 50° 0.8 60° 70° 0.7 80° 0.6 0.4 0.2 ϕ - Angular Displacement Ira - Reverse Light Current (μA) 100 0 VR - Reverse Voltage (V) Fig. 4 - Reverse Light Current vs. Reverse Voltage Fig. 7 - Relative Radiant Sensitivity vs. Angular Displacement 4.0 f = 1 MHz, E = 0 CD - Capacitance (pF) 3.5 3.0 2.5 2.0 1.5 1.0 0.5 0 0.001 0.01 0.1 1 10 100 VR - Reverse Voltage (V) Fig. 5 - Diode Capacitance vs. Reverse Voltage Rev. 1.1, 30-Jun-16 Document Number: 84305 3 For technical questions, contact: detectortechsupport@vishay.com THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000 VEMD1160X01 www.vishay.com Vishay Semiconductors REFLOW SOLDER PROFILE DRYPACK 300 Temperature (°C) max. 260 °C 245 °C 255 °C 240 °C 217 °C 250 200 Floor life (time between soldering and removing from MBB) must not exceed the time indicated on MBB label: max. 100 s Floor life: 72 h 100 max. ramp down 6 °C/s 50 FLOOR LIFE max. 30 s 150 max. 120 s Devices are packed in moisture barrier bags (MBB) to prevent the products from moisture absorption during transportation and storage. Each bag contains a desiccant. Conditions: Tamb < 30 °C, RH < 60 % Moisture sensitivity level 4, according to J-STD-020. max. ramp up 3 °C/s DRYING 0 0 50 100 19841 150 200 250 300 Time (s) Fig. 8 - Lead (Pb)-free Reflow Solder Profile According to J-STD-020 In case of moisture absorption devices should be baked before soldering. Conditions see J-STD-020 or label. Devices taped on reel dry using recommended conditions 192 h at 40 °C (+ 5 °C), RH < 5 %. PACKAGE DIMENSIONS in millimeters 20018 Rev. 1.1, 30-Jun-16 Document Number: 84305 4 For technical questions, contact: detectortechsupport@vishay.com THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000 VEMD1160X01 www.vishay.com Vishay Semiconductors BLISTER TAPE DIMENSIONS in millimeters Rev. 1.1, 30-Jun-16 Document Number: 84305 5 For technical questions, contact: detectortechsupport@vishay.com THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000 VEMD1160X01 www.vishay.com Vishay Semiconductors REEL DIMENSIONS in millimeters 8.4 +2.5 Ø 177.8 max. Ø 55 min. 8.4 +0.15 Z Form of the leave open of the wheel is supplier specific. 14.4 max. Ø 20.2 min. 1.5 min. Ø 13 - 0.2 + 0.5 Z 2:1 Drawing-No.: 9.800-5096.01-4 Issue: 2; 26.04.10 20875 Rev. 1.1, 30-Jun-16 technical drawings according to DIN specifications Document Number: 84305 6 For technical questions, contact: detectortechsupport@vishay.com THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000 Legal Disclaimer Notice www.vishay.com Vishay Disclaimer ALL PRODUCT, PRODUCT SPECIFICATIONS AND DATA ARE SUBJECT TO CHANGE WITHOUT NOTICE TO IMPROVE RELIABILITY, FUNCTION OR DESIGN OR OTHERWISE. Vishay Intertechnology, Inc., its affiliates, agents, and employees, and all persons acting on its or their behalf (collectively, “Vishay”), disclaim any and all liability for any errors, inaccuracies or incompleteness contained in any datasheet or in any other disclosure relating to any product. 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ALL RIGHTS RESERVED Revision: 01-Jan-2022 1 Document Number: 91000