VIT2080C-E3/4W

VT2080C-E3, VFT2080C-E3, VBT2080C-E3, VIT2080C-E3 www.vishay.com Vishay General Semiconductor Dual Trench MOS Barrier Schottky Rectifier Ultra Low VF = 0.52 V at IF = 5 A FEATURES TMBS ® • Trench MOS Schottky technology ITO-220AB TO-220AB • Low forward voltage drop, low power losses • High efficiency operation • Meets MSL level 1, per J-STD-020, LF maximum peak of 245 °C (for TO-263AB package) 2 3 1 1 2 3 • Material categorization: for definitions of compliance please see www.vishay.com/doc?99912 VFT2080C VT2080C PIN 1 PIN 2 PIN 1 PIN 3 CASE PIN 3 TO-263AB PIN 2 TYPICAL APPLICATIONS For use in high frequency converters, switching power supplies, freewheeling diodes, OR-ing diode, DC/DC converters and reverse battery protection. TO-262AA K K • Solder bath temperature 275 °C maximum, 10 s, per JESD 22-B106 (for TO-220AB, ITO-220AB, and TO-262AA package) MECHANICAL DATA 2 1 1 VBT2080C PIN 1 3 VIT2080C K PIN 2 2 HEATSINK PIN 1 PIN 2 PIN 3 K PRIMARY CHARACTERISTICS Case: TO-220AB, ITO-220AB, TO-263AB and TO-262AA Molding compound meets UL 94 V-0 flammability rating Base P/N-E3 - RoHS-compliant, commercial grade Terminals: Matte tin plated leads, solderable J-STD-002 and JESD 22-B102 E3 suffix meets JESD 201 class 1A whisker test per Polarity: As marked IF(AV) 2 x 10 A VRRM 80 V IFSM 100 A Mounting Torque: 10 in-lbs maximum VF at IF = 10 A 0.60 V TJ max. 150 °C Package TO-220AB, ITO-220AB, TO-263AB, TO-262AA Circuit configuration Common cathode        MAXIMUM RATINGS (TA = 25 °C unless otherwise noted) SYMBOL PARAMETER VRRM Maximum repetitive peak reverse voltage Maximum average forward rectified current (fig. 1) per device per diode IF(AV) VT2080C VFT2080C VBT2080C 80 20 10 VIT2080C UNIT V A Peak forward surge current 8.3 ms single half sine-wave superimposed on rated load per diode IFSM 100 A Non-repetitive avalanche energy at TJ = 25 °C, L = 60 mH per diode EAS 110 mJ Peak repetitive reverse current at tp = 2 μs, 1 kHz, TJ = 38 °C ± 2 °C per diode IRRM 1.0 A Isolation voltage (ITO-220AB only) from terminal to heatsink t = 1 min Operating junction and storage temperature range VAC 1500 V TJ, TSTG -55 to +150 °C Revision: 16-Mar-18 Document Number: 89166 1 For technical questions within your region: DiodesAmericas@vishay.com, DiodesAsia@vishay.com, DiodesEurope@vishay.com THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000 VT2080C-E3, VFT2080C-E3, VBT2080C-E3, VIT2080C-E3 www.vishay.com Vishay General Semiconductor ELECTRICAL CHARACTERISTICS (TA = 25 °C unless otherwise noted) PARAMETER TEST CONDITIONS IF = 5 A Instantaneous forward voltage per diode TA = 25 °C IF = 10 A VF (1) IF = 5 A TA = 125 °C IF = 10 A Reverse current per diode SYMBOL TA = 25 °C VR = 80 V TA = 125 °C IR (2) TYP. MAX. 0.57 - UNIT 0.67 0.81 0.52 - 0.60 0.70 20 600 μA 10 20 mA V Notes (1) Pulse test: 300 μs pulse width, 1 % duty cycle (2) Pulse test: Pulse width  40 ms THERMAL CHARACTERISTICS (TA = 25 °C unless otherwise noted) PARAMETER SYMBOL Typical thermal resistance per diode RJC per device VT2080C VFT2080C VBT2080C VIT2080C 3.0 6.0 3.0 3.0 2.0 5.0 2.0 2.0 UNIT °C/W ORDERING INFORMATION (Example) PACKAGE PREFERRED P/N UNIT WEIGHT (g) PACKAGE CODE BASE QUANTITY DELIVERY MODE TO-220AB VT2080C-E3/4W 1.88 4W 50/tube Tube ITO-220AB VFT2080C-E3/4W 1.73 4W 50/tube Tube TO-263AB VBT2080C-E3/4W 1.36 4W 50/tube Tube TO-263AB VBT2080C-E3/8W 1.36 8W 800/reel Tape and reel TO-262AA VIT2080C-E3/4W 1.44 4W 50/tube Tube Revision: 16-Mar-18 Document Number: 89166 2 For technical questions within your region: DiodesAmericas@vishay.com, DiodesAsia@vishay.com, DiodesEurope@vishay.com THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000 VT2080C-E3, VFT2080C-E3, VBT2080C-E3, VIT2080C-E3 www.vishay.com Vishay General Semiconductor RATINGS AND CHARACTERISTICS CURVES (TA = 25 °C unless otherwise noted) Resistive or Inductive Load Instantaneous Reverse Current (mA) Average Forward Current (A) 24 V(B,I)T2080C 20 16 VFT2080C 12 8 4 0 0 25 75 50 100 125 150 175 TA = 125 °C TA = 100 °C 1 0.1 TA = 25 °C 0.01 0.001 20 30 40 50 60 80 70 90 100 Case Temperature (°C) Fig. 1 - Maximum Forward Current Derating Curve Fig. 4 - Typical Reverse Characteristics Per Diode 10 000 Junction Capacitance (pF) D = 0.2 6 5 D = 1.0 D = 0.1 4 T 3 2 1 D = tp/T 2 4 6 8 1000 100 tp 10 0.1 0 0 TJ = 25 °C f = 1.0 MHz Vsig = 50 mVp-p D = 0.8 D = 0.5 D = 0.3 7 Average Power Loss (W) TA = 150 °C 10 Percent of Rated Peak Reverse Voltage (%) 8 10 12 1 10 100 Average Forward Current (A) Reverse Voltage (V) Fig. 2 - Forward Power Loss Characteristics Per Diode Fig. 5 - Typical Junction Capacitance Per Diode Transient Thermal Impedance (°C/W) 100 Instantaneous Forward Current (A) 100 TA = 150 °C 10 TA = 125 °C TA = 100 °C 1 TA = 25 °C 0.1 0 0.2 0.4 0.6 0.8 1.0 1.2 10 Junction to Case VFT2080C V(B,I)T2080C 1 0.1 0.01 0.1 1 10 100 Instantaneous Forward Voltage (V) t - Pulse Duration (s) Fig. 3 - Typical Instantaneous Forward Characteristics Per Diode Fig. 6 - Typical Transient Thermal Impedance Per Device Revision: 16-Mar-18 Document Number: 89166 3 For technical questions within your region: DiodesAmericas@vishay.com, DiodesAsia@vishay.com, DiodesEurope@vishay.com THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000 VT2080C-E3, VFT2080C-E3, VBT2080C-E3, VIT2080C-E3 www.vishay.com Vishay General Semiconductor PACKAGE OUTLINE DIMENSIONS in inches (millimeters) TO-220AB 0.415 (10.54) 0.380 (9.65) 0.185 (4.70) 0.175 (4.44) 0.161 (4.08) 0.139 (3.53) 0.055 (1.39) 0.045 (1.14) 0.113 (2.87) 0.103 (2.62) 1 PIN 2 0.635 (16.13) 0.625 (15.87) 3 0.160 (4.06) 0.140 (3.56) 0.350 (8.89) 0.330 (8.38) 1.148 (29.16) 1.118 (28.40) 0.110 (2.79) 0.100 (2.54) 0.057 (1.45) 0.045 (1.14) 0.104 (2.65) 0.096 (2.45) 0.603 (15.32) 0.573 (14.55) 0.560 (14.22) 0.530 (13.46) 0.035 (0.90) 0.028 (0.70) 0.205 (5.20) 0.195 (4.95) 0.022 (0.56) 0.014 (0.36) Revision: 16-Mar-18 Document Number: 89166 4 For technical questions within your region: DiodesAmericas@vishay.com, DiodesAsia@vishay.com, DiodesEurope@vishay.com THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000 VT2080C-E3, VFT2080C-E3, VBT2080C-E3, VIT2080C-E3 www.vishay.com Vishay General Semiconductor TO-262AA 0.411 (10.45) 0.380 (9.65) 0.950 (24.13) 0.920 (23.37) 1 PIN 2 3 0.185 (4.70) 0.175 (4.44) 0.055 (1.40) 0.047 (1.19) 0.055 (1.40) 0.045 (1.14) 0.350 (8.89) 0.330 (8.38) 0.510 (12.95) 0.470 (11.94) 0.160 (4.06) 0.140 (3.56) 0.110 (2.79) 0.100 (2.54) 0.057 (1.45) 0.045 (1.14) 0.104 (2.65) 0.096 (2.45) 0.560 (14.22) 0.530 (13.46) 0.035 (0.90) 0.028 (0.70) 0.205 (5.20) 0.195 (4.95) D2PAK (TO-263AB) 0.411 (10.45) 0.380 (9.65) 0.190 (4.83) 0.160 (4.06) 0.245 (6.22) MIN. 0.401 (10.19) 0.381 (9.68) 0.022 (0.56) 0.014 (0.35) Mounting Pad Layout 0.42 (10.66) min. 0.055 (1.40) 0.045 (1.14) K 0.33 (8.38) min. 0.360 (9.14) 0.320 (8.13) 1 K 2 0.624 (15.85) 0.591 (15.00) 0.670 (17.02) 0.591 (15.00) 0 to 0.01 (0 to 0.254) 0.110 (2.79) 0.090 (2.29) 0.021 (0.53) 0.014 (0.36) 0.037 (0.940) 0.027 (0.686) 0.105 (2.67) 0.095 (2.41) 0.055 (1.40) 0.047 (1.19) 0.205 (5.20) 0.195 (4.95) 0.140 (3.56) 0.110 (2.79) 0.15 (3.81) min. 0.08 (2.032) MIN. 0.105 (2.67) 0.095 (2.41) Revision: 16-Mar-18 Document Number: 89166 5 For technical questions within your region: DiodesAmericas@vishay.com, DiodesAsia@vishay.com, DiodesEurope@vishay.com THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. 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