VT3080S, VIT3080S
www.vishay.com
Vishay General Semiconductor
Trench MOS Barrier Schottky Rectifier
Ultra Low VF = 0.39 V at IF = 5 A
FEATURES
TMBS ®
TO-220AB
• Trench MOS Schottky technology
TO-262AA
• Low forward voltage drop, low power losses
K
• High efficiency operation
• Solder bath temperature 275 °C max. 10 s,
per JESD 22-B106
2
VT3080S
PIN 1
PIN 3
3
1
1
2
VIT3080S
3
• Material categorization: for definitions of compliance
please see www.vishay.com/doc?99912
TYPICAL APPLICATIONS
PIN 2
PIN 1
PIN 2
CASE
PIN 3
K
For use in high frequency DC/DC converters, switching
power supplies, freewheeling diodes, OR-ing diode, and
reverse battery protection.
MECHANICAL DATA
PRIMARY CHARACTERISTICS
IF(AV)
30 A
VRRM
80 V
IFSM
200 A
VF at IF = 30 A
0.73 V
TJ max.
150 °C
Package
TO-220AB, TO-262AA
Diode variation
Single
Case: TO-220AB and TO-262AA
Molding compound meets UL 94 V-0 flammability rating
Base P/N-M3 - halogen-free, RoHS-compliant, and
commercial grade
Terminals: matte tin plated leads, solderable
J-STD-002 and JESD 22-B102
M3 suffix meets JESD 201 class 1A whisker test
per
Polarity: as marked
Mounting Torque: 10 in-lbs maximum
MAXIMUM RATINGS (TA = 25 °C unless otherwise noted)
PARAMETER
SYMBOL
VT3080S
VIT3080S
UNIT
Maximum repetitive peak reverse voltage
VRRM
80
V
Maximum average forward rectified current (fig. 1)
IF(AV)
30
A
Peak forward surge current 8.3 ms single half sine-wave
superimposed on rated load
IFSM
200
A
dV/dt
10 000
V/μs
TJ, TSTG
-55 to +150
°C
Voltage rate of change (rated VR)
Operating junction and storage temperature range
Revision: 09-Nov-17
Document Number: 89242
1
For technical questions within your region: DiodesAmericas@vishay.com, DiodesAsia@vishay.com, DiodesEurope@vishay.com
THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT
ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000
VT3080S, VIT3080S
www.vishay.com
Vishay General Semiconductor
ELECTRICAL CHARACTERISTICS (TA = 25 °C unless otherwise noted)
PARAMETER
TEST CONDITIONS
SYMBOL
IF = 5 A
IF = 15 A
Instantaneous forward voltage per diode
TA = 25 °C
IF = 30 A
VF (1)
IF = 5 A
IF = 15 A
TA = 125 °C
IF = 30 A
VR = 80 V
Reverse current per diode
TA = 25 °C
TA = 125 °C
IR (2)
TYP.
MAX.
0.47
-
0.61
-
0.82
0.95
0.39
-
UNIT
V
0.57
-
0.73
0.82
70
1000
μA
23
45
mA
Notes
(1) Pulse test: 300 μs pulse width, 1 % duty cycle
(2) Pulse test: Pulse width 40 ms
THERMAL CHARACTERISTICS (TA = 25 °C unless otherwise noted)
PARAMETER
SYMBOL
Typical thermal resistance
VT3080S
VIT3080S
1.5
RJC
UNIT
°C/W
ORDERING INFORMATION (Example)
PACKAGE
UNIT WEIGHT (g)
PACKAGE CODE
BASE QUANTITY
DELIVERY MODE
TO-220AB
VT3080S-M3/4W
PREFERRED P/N
1.88
4W
50/tube
Tube
TO-262AA
VIT3080S-M3/4W
1.45
4W
50/tube
Tube
Revision: 09-Nov-17
Document Number: 89242
2
For technical questions within your region: DiodesAmericas@vishay.com, DiodesAsia@vishay.com, DiodesEurope@vishay.com
THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT
ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000
VT3080S, VIT3080S
www.vishay.com
Vishay General Semiconductor
RATINGS AND CHARACTERISTICS CURVES (TA = 25 °C unless otherwise noted)
Instantaneous Reverse Current (mA)
35
30
25
20
15
10
5
Mounted on Specific Heatsink
0
0
25
75
50
100
125
150
175
TA = 125 °C
10
TA = 100 °C
1
0.1
TA = 25 °C
0.01
30
40
50
60
80
70
90
100
Percent of Rated Peak Reverse Voltage (%)
Fig. 1 - Maximum Forward Current Derating Curve
Fig. 4 - Typical Reverse Characteristics
Transient Thermal Impedance (°C/W)
D = 0.5
Average Power Loss (W)
TA = 150 °C
Case Temperature (°C)
30
D = 0.8
D = 0.3
25
D = 0.2
20
D = 1.0
D = 0.1
15
T
10
5
D = tp/T
tp
0
0
5
10
15
20
25
30
35
10
Junction to Case
1
0.1
0.01
0.1
10
1
100
Average Forward Current (A)
t - Pulse Duration (s)
Fig. 2 - Forward Power Dissipation Characteristics
Fig. 5 - Typical Transient Thermal Impedance
100
Instantaneous Forward Current (A)
100
0.001
20
10 000
TA = 150 °C
TA = 125 °C
10
TA = 100 °C
1
Junction Capacitance (pF)
Average Forward Current (A)
Resistive or Inductive Load
TJ = 25 °C
f = 1.0 MHz
Vsig = 50 mVp-p
1000
TA = 25 °C
0.1
0
0.1 0.2 0.3 0.4 0.5 0.6 0.7 0.8 0.9 1.0 1.1
100
0.1
1
10
Instantaneous Forward Voltage (V)
Reverse Voltage (V)
Fig. 3 - Typical Instantaneous Forward Characteristics
Fig. 6 - Typical Junction Capacitance
100
Revision: 09-Nov-17
Document Number: 89242
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For technical questions within your region: DiodesAmericas@vishay.com, DiodesAsia@vishay.com, DiodesEurope@vishay.com
THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT
ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000
VT3080S, VIT3080S
www.vishay.com
Vishay General Semiconductor
PACKAGE OUTLINE DIMENSIONS in inches (millimeters)
TO-220AB
0.415 (10.54)
0.380 (9.65)
0.185 (4.70)
0.175 (4.44)
0.161 (4.08)
0.139 (3.53)
0.055 (1.39)
0.045 (1.14)
0.113 (2.87)
0.103 (2.62)
1
PIN
2
0.635 (16.13)
0.625 (15.87)
3
0.160 (4.06)
0.140 (3.56)
0.603 (15.32)
0.573 (14.55)
0.350 (8.89)
0.330 (8.38)
1.148 (29.16)
1.118 (28.40)
0.110 (2.79)
0.100 (2.54)
0.057 (1.45)
0.045 (1.14)
0.560 (14.22)
0.530 (13.46)
0.035 (0.90)
0.028 (0.70)
0.104 (2.65)
0.096 (2.45)
0.022 (0.56)
0.014 (0.36)
0.205 (5.20)
0.195 (4.95)
TO-262AA
0.411 (10.45)
0.380 (9.65)
0.950 (24.13)
0.920 (23.37)
1
PIN
2 3
0.185 (4.70)
0.175 (4.44)
0.055 (1.40)
0.047 (1.19)
0.055 (1.40)
0.045 (1.14)
0.350 (8.89)
0.330 (8.38)
0.510 (12.95)
0.470 (11.94)
0.160 (4.06)
0.140 (3.56)
0.110 (2.79)
0.100 (2.54)
0.057 (1.45)
0.045 (1.14)
0.104 (2.65)
0.096 (2.45)
0.401 (10.19)
0.381 (9.68)
0.560 (14.22)
0.530 (13.46)
0.035 (0.90)
0.028 (0.70)
0.205 (5.20)
0.195 (4.95)
0.022 (0.56)
0.014 (0.35)
Revision: 09-Nov-17
Document Number: 89242
4
For technical questions within your region: DiodesAmericas@vishay.com, DiodesAsia@vishay.com, DiodesEurope@vishay.com
THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT
ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000
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Revision: 01-Jan-2022
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Document Number: 91000