VS-10CVH01-M3
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Vishay Semiconductors
Hyperfast Rectifier, 2 x 5 A FRED Pt®
eSMP® Series
FEATURES
Base
common
cathode
4
• Hyperfast recovery time
• 175 °C max. operating junction temperature
• Low forward voltage drop reduced Qrr and soft
recovery
• Low leakage current
• Very low profile - typical height of 1.3 mm
• Ideal for automated placement
• Polyimide passivation for high reliability standard
• Meets MSL level 1, per J-STD-020, LF maximum peak
of 260 °C
• Meets JESD 201 class 2 whisker test
• Material categorization: for definitions of compliance
please see www.vishay.com/doc?99912
4
1
2
Common
cathode
3
1
Anode
Anode
2
3
SlimDPAK (TO-252AE)
LINKS TO ADDITIONAL RESOURCES
3D 3D
3D Models
DESCRIPTION / APPLICATIONS
State of the art hyper fast recovery rectifiers designed with
optimized performance of forward voltage drop, hyper fast
recovery time, and soft recovery.
The planar structure and the platinum doped life time
control guarantee the best overall performance, ruggedness
and reliability characteristics.
These devices are intended for use in PFC boost stage in the
AC/DC section of SMPS inverters or as freewheeling diodes.
Their extremely optimized stored charge and low recovery
current minimize the switching losses and reduce
over dissipation in the switching element and snubbers.
PRIMARY CHARACTERISTICS
IF(AV)
2x5A
VR
100 V
VF at IF
0.74 V
trr (typ.)
16 ns
TJ max.
175 °C
Package
SlimDPAK (TO-252AE)
Circuit configuration
Common cathode
MECHANICAL DATA
Case: SlimDPAK (TO-252AE)
Molding compound meets UL 94 V-0 flammability rating
Halogen-free, RoHS-compliant
Terminals: matte tin plated leads, solderable per
J-STD-002
ABSOLUTE MAXIMUM RATINGS
PARAMETER
SYMBOL
Peak repetitive reverse voltage
Average rectified forward current
Non-repetitive peak surge current
TEST CONDITIONS
VALUES
UNITS
100
V
VRRM
per leg
per device
per leg
Operating junction and storage temperatures
5
IF(AV)
TC = 165 °C
IFSM
TJ = 25 °C, 10 ms sine pulse wave
10
TJ, TStg
A
100
-55 to +175
°C
ELECTRICAL SPECIFICATIONS (TJ = 25 °C unless otherwise specified)
PARAMETER
Breakdown voltage, blocking voltage
Forward voltage
SYMBOL
VBR, VR
VF
Reverse leakage current per leg
IR
Junction capacitance per leg
CT
TEST CONDITIONS
MIN.
TYP.
MAX.
100
-
-
IF = 5 A
-
0.90
1.04
IF = 10 A
-
1.0
1.17
IF = 5 A, TJ = 150 °C
-
0.74
0.84
1.05
IR = 100 μA
IF = 10 A, TJ = 150 °C
-
0.85
VR = VR rated
-
-
4
TJ = 150 °C, VR = VR rated
-
-
80
VR = 100 V
-
17
-
UNITS
V
μA
pF
Revision: 18-Feb-2022
Document Number: 96098
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THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT
ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000
VS-10CVH01-M3
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DYNAMIC RECOVERY CHARACTERISTICS (TJ = 25 °C unless otherwise specified)
PARAMETER
SYMBOL
Reverse recovery time
trr
TEST CONDITIONS
MIN.
TYP.
MAX.
IF = 1 A, dIF/dt = 100 A/μs, VR = 30 V
-
16
-
IF = 0.5 A, IR = 1 A, IRR = 0.25 A
-
-
25
TJ = 25 °C
-
21
-
-
30
-
-
2.5
-
-
4
-
TJ = 125 °C
Peak recovery current
IRRM
Reverse recovery charge
Qrr
IF = 5 A
dIF/dt = 200 A/μs
VR = 160 V
TJ = 25 °C
TJ = 125 °C
UNITS
ns
A
TJ = 25 °C
-
25
-
TJ = 125 °C
-
60
-
MIN.
TYP.
MAX.
UNITS
°C
nC
THERMAL - MECHANICAL SPECIFICATIONS
PARAMETER
SYMBOL
Maximum junction and storage temperature range
Thermal resistance, junction to ambient
Thermal resistance, junction to mount, per diode
TEST CONDITIONS
TJ, TStg
-55
-
175
RthJA (1)(2)
-
73
90
RthJM (3)
-
2.1
2.5
-
0.20
-
Weight
Marking device
Case style SlimDPAK (TO-252AE)
°C/W
g
10CVH01
100
100
175 °C
10
IR - Reverse Current (μA)
IF - Instantaneous Forward Current (A)
Notes
(1) The heat generated must be less than thermal conductivity from junction to ambient; dP /dT < 1R
D
J
thJA
(2) Free air, mounted or recommended copper pad area; thermal resistance R
thJA - junction to ambient
(3) Mounted on infinite heatsink
TJ = 175 °C
TJ = -40 °C
1
TJ = 150 °C
TJ = 125 °C
10
150 °C
125 °C
1
100 °C
0.1
75 °C
0.01
50 °C
0.001
25 °C
TJ = 25 °C
0.1
0.0001
0.2
0.4
0.6
0.8
1.0
1.2
1.4
1.6
1.8
2.0
50
100
150
200
VF - Forward Voltage Drop (V)
VR - Reverse Voltage (V)
Fig. 1 - Typical Forward Voltage Drop Characteristics
Fig. 2 - Typical Values of Reverse Current vs. Reverse Voltage
Revision: 18-Feb-2022
Document Number: 96098
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ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000
VS-10CVH01-M3
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CT - Junction Capacitance (pF)
100
10
0
25
50
75
100
125
150
175
200
VR - Reverse Voltage (V)
Fig. 3 - Typical Junction Capacitance vs. Reverse Voltage
ZthJC - Thermal Impedance (°C/W)
100
RthJA
10
RthJC
1
0.1
0.00001
0.0001
0.001
0.01
0.1
1
10
100
1000
t1 - Rectangular Pulse Duration (s)
Fig. 4 - Maximum Thermal Impedance ZthJC Characteristics
7
180
RthJC = 2.1 °C/W
Average Power Loss (W)
Allowable Case Temperature (°C)
200
160
140
120
100
RthJA = 73 °C/W
80
60
40
DC
20
6
RMS limit
5
4
D = 0.02
D = 0.05
D = 0.1
D = 0.2
D = 0.5
DC
3
2
1
See note (1)
0
0
0
1
2
3
4
5
6
0
1
2
3
4
5
6
7
8
IF(AV) - Average Forward Current (A)
IF(AV) - Average Forward Current (A)
Fig. 5 - Maximum Allowable Case Temperature vs.
Average Forward Current
Fig. 6 - Forward Power Loss Characteristics
Note
(1) Formula used: T = T - (Pd + Pd
C
J
REV) x RthJC;
Pd = forward power loss = IF(AV) x VFM at (IF(AV)/D) (see fig. 6);
PdREV = inverse power loss = VR1 x IR (1 - D); IR at VR1 = rated VR
Revision: 18-Feb-2022
Document Number: 96098
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For technical questions within your region: DiodesAmericas@vishay.com, DiodesAsia@vishay.com, DiodesEurope@vishay.com
THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT
ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000
VS-10CVH01-M3
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Vishay Semiconductors
120
45
40
100
35
125 °C
Qrr (nC)
trr (ns)
125 °C
80
30
25
25 °C
20
60
25 °C
40
15
20
10
5
0
100
100
1000
1000
dIF/dt (A/μs)
dIF/dt (A/μs)
Fig. 7 - Typical Reverse Recovery Time vs. dIF/dt
Fig. 8 - Typical Stored Charge vs. dIF/dt
(3)
trr
IF
ta
tb
0
Qrr
(2)
IRRM
(4)
0.5 IRRM
di(rec)M/dt (5)
0.75 IRRM
(1) diF/dt
(1) diF/dt - rate of change of current
through zero crossing
(2) IRRM - peak reverse recovery current
(3) trr - reverse recovery time measured
from zero crossing point of negative
going IF to point where a line passing
through 0.75 IRRM and 0.50 IRRM
extrapolated to zero current.
(4) Qrr - area under curve defined by trr
and IRRM
Qrr =
trr x IRRM
2
(5) di(rec)M/dt - peak rate of change of
current during tb portion of trr
Fig. 9 - Reverse Recovery Waveform and Definitions
Revision: 18-Feb-2022
Document Number: 96098
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For technical questions within your region: DiodesAmericas@vishay.com, DiodesAsia@vishay.com, DiodesEurope@vishay.com
THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT
ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000
VS-10CVH01-M3
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Vishay Semiconductors
ORDERING INFORMATION TABLE
Device code
VS-
10
C
V
H
01
-M3
1
2
3
4
5
6
7
1
-
Vishay Semiconductors product
2
-
Current rating (10 = 10 A)
3
-
Circuit configuration:
C = common cathode
4
-
V = SlimDPAK
5
-
Process type,
H = hyper fast recovery
6
-
Voltage code (01 = 100 V)
7
-
-M3 = halogen-free, RoHS-compliant, and terminations lead (Pb)-free
ORDERING INFORMATION (Example)
PREFERRED P/N
QUANTITY PER REEL
MINIMUM ORDER QUANTITY
PACKAGING DESCRIPTION
VS-10CVH01-M3/I
4500
4500
13"diameter plastic tape and reel
LINKS TO RELATED DOCUMENTS
Dimensions
www.vishay.com/doc?96081
Part marking information
www.vishay.com/doc?96085
Packaging information
www.vishay.com/doc?88869
Revision: 18-Feb-2022
Document Number: 96098
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For technical questions within your region: DiodesAmericas@vishay.com, DiodesAsia@vishay.com, DiodesEurope@vishay.com
THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT
ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000
Outline Dimensions
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Vishay Semiconductors
SlimDPAK
DIMENSIONS in inches (millimeters)
SlimDPAK
0.055 (1.40)
0.047 (1.20)
0.249 (6.32)
0.239 (6.08)
0.016 (0.41)
0.010 (0.25)
0.028 (0.70)
0.012 (0.30)
0.265 (6.72)
0.255 (6.48)
0.370 (9.40)
0.339 (8.60)
0.008
0.000
0.055
0.039
0.090
NOM.
(2.29)
(0.20)
(0.00)
(1.40)
(1.00)
0.180
NOM.
(4.57)
Mounting Pad Layout
0.240
MIN.
(6.10)
0.224 (5.70)
0.209 (5.30)
0.205
NOM.
(5.20)
0.235
MIN.
(5.97)
0.386
REF.
(9.80)
0.075
MIN.
(1.90)
0.035 (0.90)
0.028 (0.70)
0.090
NOM.
(2.29)
0.055
MIN.
(1.40)
Revision: 14-Mar-17
Document Number: 96081
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ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000
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Revision: 01-Jan-2023
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Document Number: 91000