VS-110RKI...PbF, VS-111RKI...PbF Series
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Vishay Semiconductors
Phase Control Thyristors
(Stud Version), 110 A
FEATURES
• High current and high surge ratings
• Hermetic ceramic housing
• Designed and qualified for industrial level
• Material categorization: for definitions of compliance
please see www.vishay.com/doc?99912
TO-94 (TO-209AC)
TYPICAL APPLICATIONS
• DC motor controls
PRIMARY CHARACTERISTICS
• Controlled DC power supplies
IT(AV)
110 A
VDRM/VRRM
400 V, 800 V, 1200 V
VTM
1.57 V
IGT
80 mA
TJ
-40 °C to +140 °C
Package
TO-94 (TO-209AC)
Circuit configuration
Single SCR
• AC controllers
MAJOR RATINGS AND CHARACTERISTICS
PARAMETER
TEST CONDITIONS
IT(AV)
TC
IT(RMS)
VALUES
UNITS
110
A
90
°C
172
ITSM
I2t
50 Hz
2080
60 Hz
2180
50 Hz
21.7
60 Hz
19.8
VDRM/VRRM
tq
Typical
TJ
A
kA2s
400 to 1200
V
110
μs
-40 to +140
°C
IDRM/IRRM MAXIMUM
AT TJ = TJ MAXIMUM
mA
ELECTRICAL SPECIFICATIONS
VOLTAGE RATINGS
TYPE
NUMBER
VS-110RKI
VS-111RKI
VOLTAGE
CODE
VDRM/VRRM, MAXIMUM REPETITIVE
PEAK AND OFF-STATE VOLTAGE
V
VRSM, MAXIMUM NON-REPETITIVE
PEAK VOLTAGE
V
40
400
500
80
800
900
120
1200
1300
20
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ABSOLUTE MAXIMUM RATINGS
PARAMETER
Maximum average on-state current
at case temperature
Maximum RMS on-state current
Maximum peak, one-cycle
non-repetitive surge current
SYMBOL
IT(AV)
IT(RMS)
ITSM
TEST CONDITIONS
180° conduction, half sine wave
Maximum I2t for fusing
I2t
A
90
°C
172
t = 10 ms
No voltage
reapplied
2080
100 % VRRM
reapplied
1750
t = 8.3 ms
t = 10 ms
t = 10 ms
I2t
UNITS
110
DC at 83 °C case temperature
t = 8.3 ms
Maximum I2t for fusing
VALUES
2180
Sinusoidal half wave,
initial TJ = TJ maximum
1830
21.7
t = 8.3 ms
No voltage
reapplied
t = 10 ms
100 % VRRM
15.3
t = 8.3 ms
reapplied
14.0
19.8
t = 0.1 ms to 10 ms, no voltage reapplied
217
Low level value of threshold voltage
VT(TO)1
(16.7 % x x IT(AV) < I < x IT(AV)), TJ = TJ maximum
0.82
High level value of threshold voltage
VT(TO)2
(I > x IT(AV)), TJ = TJ maximum
1.02
Low level value of on-state slope resistance
rt1
(16.7 % x x IT(AV) < I < x IT(AV)), TJ = TJ maximum
2.16
High level value of on-state slope resistance
rt2
(I > x IT(AV)), TJ = TJ maximum
1.70
Ipk = 350 A, TJ = TJ maximum, tp = 10 ms sine pulse
1.57
Maximum on-state voltage
VTM
Maximum holding current
IH
Typical latching current
IL
TJ = 25 °C, anode supply 6 V resistive load
A
200
400
kA2s
kA2s
V
m
V
mA
SWITCHING
PARAMETER
Maximum non-repetitive rate of
rise of turned-on current
SYMBOL
dI/dt
TEST CONDITIONS
Gate drive 20 V, 20 , tr 1 μs
TJ = TJ maximum, anode voltage 80 % VDRM
Typical delay time
td
Gate current 1 A, dIg/dt = 1 A/μs
Vd = 0.67 % VDRM, TJ = 25 °C
Typical turn-off time
tq
ITM = 50 A, TJ = TJ maximum, dI/dt = - 5 A/μs
VR = 50 V, dV/dt = 20 V/μs, gate 0 V 25
VALUES
UNITS
300
A/μs
1
μs
110
BLOCKING
PARAMETER
SYMBOL
Maximum critical rate of rise of
off-state voltage
dV/dt
Maximum peak reverse and
off-state leakage current
IRRM,
IDRM
TEST CONDITIONS
VALUES
UNITS
TJ = TJ maximum linear to 80 % rated VDRM
500
V/μs
TJ = TJ maximum rated VDRM/VRRM applied
20
mA
Revision: 24-Jan-18
Document Number: 94379
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TRIGGERING
PARAMETER
SYMBOL
Maximum peak gate power
PGM
Maximum average gate power
PG(AV)
Maximum peak positive gate current
IGM
Maximum peak positive gate voltage
+ VGM
Maximum peak negative gate voltage
- VGM
VALUES
TEST CONDITIONS
TYP.
TJ = TJ maximum, tp 5 ms
12
TJ = TJ maximum, f = 50 Hz, d% = 50
3.0
IGT
TJ = 25 °C
TJ = 25 °C
TJ = 140 °C
DC gate current not to trigger
IGD
DC gate voltage not to trigger
VGD
A
20
Maximum required gate
trigger/current/voltage are
the lowest value which will
trigger all units 12 V anode
to cathode applied
TJ = - 40 °C
VGT
W
V
10
TJ = 140 °C
DC gate voltage required to trigger
UNITS
3.0
TJ = TJ maximum, tp 5 ms
TJ = - 40 °C
DC gate current required to trigger
MAX.
TJ = TJ maximum
Maximum gate current/
voltage not to trigger is the
maximum value which will
not trigger any unit with
rated VDRM anode to
cathode applied
180
-
80
120
40
-
2.5
-
1.6
2
1
-
mA
V
6.0
mA
0.25
V
THERMAL AND MECHANICAL SPECIFICATIONS
PARAMETER
SYMBOL
Maximum operating junction temperature range
Maximum storage temperature range
TEST CONDITIONS
VALUES
TJ
-40 to +140
TStg
-40 to +150
Maximum thermal resistance, junction to case
RthJC
DC operation
0.27
Maximum thermal resistance, case to heatsink
RthCS
Mounting surface, smooth, flat and greased
0.1
Non-lubricated threads
15.5
(137)
Lubricated threads
14
(120)
Mounting torque, ± 10 %
Approximate weight
130
Case style
See dimensions - link at the end of datasheet
UNITS
°C
K/W
N·m
(lbf · in)
g
TO-94 (TO-209AC)
RthJC CONDUCTION
CONDUCTION ANGLE
SINUSOIDAL CONDUCTION
RECTANGULAR CONDUCTION
180°
0.043
0.031
120°
0.052
0.053
90°
0.066
0.071
60°
0.096
0.101
30°
0.167
0.169
TEST CONDITIONS
UNITS
TJ = TJ maximum
K/W
Note
• The table above shows the increment of thermal resistance RthJC when devices operate at different conduction angles than DC
Revision: 24-Jan-18
Document Number: 94379
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140
140
RthJC (DC) = 0.27 K/W
Maximum Allowable Case
Temperature (°C)
Maximum Allowable Case
Temperature (°C)
RthJC (DC) = 0.27 K/W
130
Ø
120
Conduction angle
110
100
120°
90
30°
60°
90°
130
120
Ø
Conduction period
110
100
DC
90
30°
180°
180°
90°
70
80
0
20
40
60
80
100
0
120
Average On-State Current (A)
94379_01
20
40
60
80
100 120 140 160 180
Average On-State Current (A)
94379_02
Fig. 1 - Current Ratings Characteristics
Fig. 2 - Current Ratings Characteristics
160
140
Ø
40
Conduction angle
20
TJ = 140 °C
/W
R
-Δ
60
W
80
W
W
1K
100
60
1.5
K/W
2 K/
W
40
4 K/W
80
20
0
K/
K/
RMS limit
6
K/
3
100
0.
0.8
120
0.
120
140
=
180°
120°
90°
60°
30°
SA
Maximum Average On-State
Power Loss (W)
160
R th
Maximum Average On-State
Power Loss (W)
120°
60°
80
5 K/W
0
0
20
40
60
80
100
120
Average On-State Current (A)
94379_03a
0
20
40
60
80
100
120
140
120
140
Maximum Allowable
Ambient Temperature (°C)
94379_03b
Fig. 3 - On-State Power Loss Characteristics
220
200
DC
180°
120°
90°
60°
30°
180
160
140
120
RMS limit
100
80
60
Ø
40
Conduction period
20
TJ = 140 °C
Maximum Average On-State
Power Loss (W)
Maximum Average On-State
Power Loss (W)
220
200
th
SA
160
=
0.
3
0.6
140
0.8
120
W
60
1.5 K
/W
2 K/W
40
4 K/W
80
20
K/
W
K/
K/
1K W
/W
100
0
-Δ
R
5 K/W
0
0
94379_04a
R
180
20
40
60
80
100 120 140 160 180
Average On-State Current (A)
0
20
94379_04b
40
60
80
100
Maximum Allowable
Ambient Temperature (°C)
Fig. 4 - On-State Power Loss Characteristics
Revision: 24-Jan-18
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2500
2000
Peak Half Sine Wave
On-State Current (A)
1800
1600
Peak Half Sine Wave
On-State Current (A)
At any rated load condition and with
rated VRRM applied following surge.
Initial TJ = 140 °C
at 60 Hz 0.0083 s
at 50 Hz 0.0100 s
1400
1200
Maximum non-repetitive surge current
versus pulse train duration. Control of
conduction may not be maintained.
Initial TJ = 140 °C
No voltage reapplied
Rated VRRM reapplied
2000
1500
1000
1000
800
1
10
500
0.01
100
Number of Equal Amplitude Half
Cycle Current Pulses (N)
94379_05
1
10
Pulse Train Duration (s)
94379_06
Fig. 5 - Maximum Non-Repetitive Surge Current
Instantaneous On-State Current (A)
0.1
Fig. 6 - Maximum Non-Repetitive Surge Current
10 000
TJ = 25 °C
1000
TJ = 140 °C
100
10
1
0
94379_07
1
2
3
4
5
Instantaneous On-State Voltage (V)
Fig. 7 - On-State Voltage Drop Characteristics
ZthJC - Transient Thermal
Impedance (K/W)
1
Steady state value
RthJC = 0.27 K/W
(DC operation)
0.1
0.01
0.001
0.0001
94379_08
0.001
0.01
0.1
1
10
Square Wave Pulse Duration (s)
Fig. 8 - Thermal Impedance ZthJC Characteristic
Revision: 24-Jan-18
Document Number: 94379
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10
Rectangular gate pulse
(a) Recommended load line for
rated dI/dt: 20 V, 30 Ω,
tr ≤ 0.5 μs, tp ≥ 6 μs
(b) Recommended load line for
≤ 30 % rated dI/dt: 15 V, 40 Ω,
tr ≤ 1 μs, tp ≥ 6 μs
VGD
0.1
0.001
(b)
TJ = 40 °C
1
(1) PGM = 12 W, tp = 5 ms
(2) PGM = 30 W, tp = 2 ms
(3) PGM = 60 W, tp = 1 ms
(4) PGM = 200 W, tp = 300 μs
(a)
TJ = 25 °C
TJ = 140 °C
Instantaneous Gate Voltage (V)
100
(1)
(2)
(3)
(4)
Frequency limited by PG(AV)
IGD
0.01
0.1
1
10
100
1000
Instantaneous Gate Current (A)
94379_09
Fig. 9 - Gate Characteristics
ORDERING INFORMATION TABLE
Device code
VS-
11
0
RKI
120
M
PbF
1
2
3
4
5
6
7
-
Vishay Semiconductors product
2
-
IT(AV) rated average output current (rounded/10)
3
-
0 = eyelet terminals (gate and auxiliary cathode leads)
4
-
1 = fast-on terminals (gate and auxiliary cathode leads)
Thyristor
5
-
Voltage code x 10 = VRRM (see Voltage Ratings table)
6
-
1
None = stud base1/2"-20UNF-2A threads
M = stud base metric threads M12 x 1.75 E 6
7
-
None = standard production
PbF = lead (Pb)-free
LINKS TO RELATED DOCUMENTS
Dimensions
www.vishay.com/doc?95003
Revision: 24-Jan-18
Document Number: 94379
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Outline Dimensions
Vishay Semiconductors
TO-209AC (TO-94) for 110RKI and 111RKI Series
DIMENSIONS in millimeters (inches)
Ceramic housing
37
)M
IN
.
2.6 (0.10) MAX.
16.5 (0.65) MAX.
(0.
Ø 8.5 (0.33)
9 .5
Ø 4.3 (0.17)
Flexible lead
20 (0.79) MIN.
2
C.S. 16 mm
(0.025 s.i.)
C.S. 0.4 mm2
Red silicon rubber
(0.0006 s.i.)
Red cathode
157 (6.18)
170 (6.69)
White gate
215 ± 10
(8.46 ± 0.39)
Fast-on terminals
Red shrink
55 (2.16)
MIN.
White shrink
AMP. 280000-1
REF-250
Ø 22.5 (0.88) MAX.
24 (0.94)
MAX.
10 (0.39) MAX.
21 (0.83)
MAX.
SW 27
1/2"-20UNF-2A
29.5 (1.16) MAX.
Note
• For metric device: M12 x 1.75 contact factory
Document Number: 95363
Revision: 25-Sep-08
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1
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