VS-150U60D

VS-150U(R).. Series www.vishay.com Vishay Semiconductors Standard Recovery Diodes, (Stud Version), 150 A FEATURES • Diffused diode • High voltage ratings up to 1200 V RoHS • High surge current capabilities COMPLIANT • Stud cathode and stud anode version • Hermetic metal case • Designed and qualified for industrial level • Material categorization: for definitions of compliance please see www.vishay.com/doc?99912 DO-8 (DO-205AA) TYPICAL APPLICATIONS • Welders • Power supplies PRIMARY CHARACTERISTICS • Machine tool controls IF(AV) 150 A Package DO-8 (DO-205AA) Circuit configuration Single • High power drives • Medium traction applications • Battery charges • Freewheeling diodes MAJOR RATINGS AND CHARACTERISTICS PARAMETER TEST CONDITIONS IF(AV) VALUES UNITS 150 A TC 125 °C 50 Hz 3000 60 Hz 3140 50 Hz 45 60 Hz 41 Range 600 to 1200 V -40 to +180 °C IRRM MAXIMUM AT TJ = TJ MAXIMUM mA IF(RMS) 235 IFSM I2t VRRM TJ A kA2s ELECTRICAL SPECIFICATIONS VOLTAGE RATINGS TYPE NUMBER VS-150U(R).. VOLTAGE CODE VRRM, MAXIMUM REPETITIVE PEAK REVERSE VOLTAGE V VRSM, MAXIMUM NON-REPETITIVE PEAK REVERSE VOLTAGE V 60 600 700 80 800 900 100 1000 1100 120 1200 1300 15 Revision: 11-Jan-18 Document Number: 93490 1 For technical questions within your region: DiodesAmericas@vishay.com, DiodesAsia@vishay.com, DiodesEurope@vishay.com THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000 VS-150U(R).. Series www.vishay.com Vishay Semiconductors FORWARD CONDUCTION PARAMETER SYMBOL Maximum average forward current  at case temperature IF(AV) Maximum RMS forward current IF(RMS) Maximum peak, one cycle forward, non-repetitive surge current IFSM Maximum I2t for fusing I2t Slope resistance rf Threshold voltage VF(T0) Maximum forward voltage drop VFM TEST CONDITIONS VALUES 180° conduction, half sine wave A 125 °C DC at 110 °C 235 t = 10 ms 3000 t = 8.3 ms t = 10 ms No voltage  reapplied Sinusoidal half wave, initial TJ = TJ maximum UNITS 150 A 3140 45 t = 8.3 ms kA2s 41 TJ = TJ maximum 0.97 m 0.80 Ipk = 600 A, TJ = 25 °C, tp = 10 ms sinusoidal wave V 1.47 THERMAL AND MECHANICAL SPECIFICATIONS PARAMETER SYMBOL Maximum junction operating and storage temperature range TEST CONDITIONS TJ, TStg VALUES UNITS -40 to +180 °C Maximum thermal resistance, junction to case RthJC DC operation 0.3 Maximum thermal resistance, case to heatsink RthCS Mounting surface, smooth, flat and greased 0.1 Not lubricated threads tighting on hexagon 17 Lubricated threads tighting on hexagon Maximum allowable mounting torque + 0 - 20 % K/W 14.5 Not lubricated threads tighting on nut N·m 14 Lubricated threads tighting on nut 12 Approximate weight 130 Case style See dimensions - link at the end of datasheet g DO-8 (DO-205AA) RthJC CONDUCTION CONDUCTION ANGLE SINUSOIDAL CONDUCTION RECTANGULAR CONDUCTION 180° 0.031 0.023 120° 0.038 0.040 90° 0.048 0.053 60° 0.071 0.075 30° 0.120 0.121 TEST CONDITIONS UNITS TJ = TJ maximum K/W 180 150U(R).. Series RthJC (DC) = 0.3 K/W 160 Conduction Angle 140 120 180 ° 30° 100 120 ° 60 ° 90 ° 80 0 50 100 150 Average Forward Current (A) Fig. 1 - Current Ratings Characteristics 200 Maximum Allowable Case Temperature (°C) Maximum Allowable Case Temperature (°C) Note • The table above shows the increment of thermal resistance RthJC when devices operate at different conduction angles than DC 180 150U(R).. Series RthJC (DC) = 0.3 K/W 160 Conduction Period 140 30 ° DC 60 ° 90 ° 120 120 ° 180 ° 100 80 0 40 80 120 160 200 Average Forward Current (A) Fig. 2 - Current Ratings Characteristics Revision: 11-Jan-18 Document Number: 93490 2 For technical questions within your region: DiodesAmericas@vishay.com, DiodesAsia@vishay.com, DiodesEurope@vishay.com THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000 VS-150U(R).. Series Maximum Average Forward Power Loss (W) www.vishay.com Vishay Semiconductors 300 180 ° 120 ° 250 Rt hS 90 ° A =0 .0 60 ° 200 0.2 30 ° 5 K/ W K/ -D W 150 elt a 0.4 RMS Limit K/W 0.6 K/W 100 R Conduction Angle 50 1.2 K /W 150U(R) .. Series Tj = 180 °C 0 0 50 100 150 100 200 Average Forward Current (A) 120 140 160 180 Maximum Allowable Ambient Temperature (°C) Maximum Average Forward Power Loss (W) Fig. 3 - Forward Power Loss Characteristics 300 180 ° 250 RMS Limit 120 ° 90 ° 200 Rt 60 ° hS A DC 0.2 30 ° 150 0.4 Conduction Period 100 50 =0 .05 K/W K/ W -D elt K/W 0.6 K/W 0.8 K /W aR 1.2 K/W 150U(R) .. Series Tj = 180 °C 0 0 50 100 150 200 250 Average Forward Current (A) 300 100 120 140 160 180 Maximum Allowable Ambient Temperature (°C) 3500 At Any Rated Load Condition And With Rated Vrrm Applied Following Surge. Initial Tj = 180 °C @ 60 Hz 0.0083 s @ 50 Hz 0.0100 s 3000 2500 2000 1500 1000 Per Junction 500 1 10 100 Number Of Equal Amplitude Half Cycle Current Pulses (N) Fig. 5 - Maximum Non-Repetitive Surge Current Peak Half Sine Wave Forward Current (A) Peak Half Sine Wave Forward Current (A) Fig. 4 - Forward Power Loss Characteristics 4000 3500 3000 Maximum Non Repetitive Surge Current Versus Pulse Train Duration. Control Of Conduction May Not Be Maintained. Initial T j = 180 °C No Voltage Reapplied Rated Vrrm Reapplied 2500 2000 1500 1000 500 0.01 Per Junction 0.1 1 Pulse Train Duration (s) Fig. 6 - Maximum Non-Repetitive Surge Current Revision: 11-Jan-18 Document Number: 93490 3 For technical questions within your region: DiodesAmericas@vishay.com, DiodesAsia@vishay.com, DiodesEurope@vishay.com THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000 VS-150U(R).. Series www.vishay.com Instantaneous Forward Current (A) Vishay Semiconductors 10 000 1000 100 Tj = 25 °C Tj = 180 °C 10 0.5 1 1.5 2 2.5 3 Instantaneous Forward Voltage (V) ZthJC - Transient Thermal Impedance (K/W) Fig. 7 - Forward Voltage Drop Characteristics 1 Steady State Value RthJC = 0.3 K/W (DC Operation) 0.1 150U(R).. Series 0.01 0.001 0.01 0.1 1 10 t - Square Wave Pulse Duration (s) Fig. 8 - Thermal Impedance ZthJC Characteristic Revision: 11-Jan-18 Document Number: 93490 4 For technical questions within your region: DiodesAmericas@vishay.com, DiodesAsia@vishay.com, DiodesEurope@vishay.com THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000 VS-150U(R).. Series www.vishay.com Vishay Semiconductors ORDERING INFORMATION TABLE Device code VS- 15 0 U R 120 D L 1 2 3 4 5 6 7 8 1 - Vishay Semiconductors product 2 - 15 = essential part number 3 - 0 = standard device 4 - U = stud normal polarity (cathode to stud) 5 - None = stud normal polarity (cathode to stud) R = stud reverse polarity (anode to stud) 6 - Voltage code x 10 = VRRM (see Voltage Ratings table) 7 - Diffused diode 8 - L = stud base 1/2"-24UNF-2A threads None = stud base 3/8"-24UNF-2A threads Note • For metric device M12 x 1.75 contact factory LINKS TO RELATED DOCUMENTS Dimensions www.vishay.com/doc?95315 Revision: 11-Jan-18 Document Number: 93490 5 For technical questions within your region: DiodesAmericas@vishay.com, DiodesAsia@vishay.com, DiodesEurope@vishay.com THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000 Outline Dimensions Vishay Semiconductors DO-205AA (DO-8) for 150U(R) Series DIMENSIONS in millimeters (inches) Glass-metal seal 16.5 (0.65) MAX. 6.5 (0.26) MIN. 2.6 ( 0.10 ) MA X. 35 (1.38) MAX. Ø 8.5 (0.33) NOM. C.S. 16 mm2 (0.015 s.i.) 165 (6.49) MIN 170 (6.69) MAX. Ø 23.5 (0.93) MAX. 55 (2.16) MIN. 24 (0.94) MAX. 17 (0.69) MAX. 3/8"-24UNF-2A (For metric device M12 x 1.75) (1) Note (1) For stud base 1/2"-20UNF-2A threads; refer to “Ordering Information Table” Document Number: 95315 Revision: 02-Jul-08 For technical questions, contact: indmodules@vishay.com www.vishay.com 1 Legal Disclaimer Notice www.vishay.com Vishay Disclaimer ALL PRODUCT, PRODUCT SPECIFICATIONS AND DATA ARE SUBJECT TO CHANGE WITHOUT NOTICE TO IMPROVE RELIABILITY, FUNCTION OR DESIGN OR OTHERWISE. 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